Files
OpenRAM/technology/scn3me_subm/tech/tech.py
T
Bastian Koppelmann df9f351a91 Add custom cell properties to technologies
this is technology specific database to store data about the custom
design cells. For now it only contains on which axis the bitcells are
mirrored. This is a first step to support thin cells that need to be
mirrored on the x and y axis.

Signed-off-by: Bastian Koppelmann <[email protected]>
2020-01-28 15:46:14 +01:00

307 lines
11 KiB
Python
Executable File

import os
from design_rules import *
from module_type import *
from custom_cell_properties import CellProperties
"""
File containing the process technology parameters for SCMOS 3me, subm, 180nm.
"""
# This uses the default classes to instantiate module from
# '$OPENRAM_HOME/compiler/modules'.
# Using tech_modules['cellname'] you can override each class by providing a custom
# implementation in '$OPENRAM_TECHDIR/modules/'
# For example: tech_modules['contact'] = 'contact_scn3me'
tech_modules = ModuleType()
###################################################
# Custom cell properties
###################################################
cell_properties = CellProperties()
cell_properties.bitcell.mirror.x = True
cell_properties.bitcell.mirror.y = False
#GDS file info
GDS={}
# gds units
# gds units
# From http://www.cnf.cornell.edu/cnf_spie9.html: "The first
#is the size of a database unit in user units. The second is the size
#of a database unit in meters. For example, if your library was
#created with the default units (user unit = 1 m and 1000 database
#units per user unit), then the first number would be 0.001 and the
#second number would be 10-9. Typically, the first number is less than
#1, since you use more than 1 database unit per user unit. To
#calculate the size of a user unit in meters, divide the second number
#by the first."
GDS["unit"]=(0.001,1e-6)
# default label zoom
GDS["zoom"] = 0.5
###################################################
##GDS Layer Map
###################################################
# create the GDS layer map
layer={}
layer["vtg"] = (-1, 0)
layer["vth"] = (-1, 0)
layer["contact"] = (47, 0)
layer["pwell"] = (41, 0)
layer["nwell"] = (42, 0)
layer["active"] = (43, 0)
layer["pimplant"] = (44, 0)
layer["nimplant"] = (45, 0)
layer["poly"] = (46, 0)
layer["active_contact"] = (48, 0)
layer["metal1"] = (49, 0)
layer["via1"] = (50, 0)
layer["metal2"] = (51, 0)
layer["via2"] = (61, 0)
layer["metal3"] = (62, 0)
layer["text"] = (63, 0)
layer["boundary"] = (63, 0)
layer["blockage"] = (83, 0)
###################################################
##END GDS Layer Map
###################################################
###################################################
##DRC/LVS Rules Setup
###################################################
_lambda_ = 0.3
#technology parameter
parameter={}
parameter["min_tx_size"] = 4*_lambda_
parameter["beta"] = 2
parameter["6T_inv_nmos_size"] = 8*_lambda_
parameter["6T_inv_pmos_size"] = 3*_lambda_
parameter["6T_access_size"] = 4*_lambda_
drclvs_home=os.environ.get("DRCLVS_HOME")
drc = design_rules("scn3me_subm")
drc["body_tie_down"] = 0
drc["has_pwell"] = True
drc["has_nwell"] = True
#grid size is 1/2 a lambda
drc["grid"]=0.5*_lambda_
#DRC/LVS test set_up
drc["drc_rules"]=drclvs_home+"/calibreDRC_scn3me_subm.rul"
drc["lvs_rules"]=drclvs_home+"/calibreLVS_scn3me_subm.rul"
drc["layer_map"]=os.environ.get("OPENRAM_TECH")+"/scn3me_subm/layers.map"
# minwidth_tx with contact (no dog bone transistors)
drc["minwidth_tx"] = 4*_lambda_
drc["minlength_channel"] = 2*_lambda_
# 1.3 Minimum spacing between wells of same type (if both are drawn)
drc["well_to_well"] = 6*_lambda_
# 1.4 Minimum spacing between wells of different type (if both are drawn)
drc["pwell_to_nwell"] = 0
# 1.1 Minimum width
drc["minwidth_well"] = 12*_lambda_
# 3.1 Minimum width
drc["minwidth_poly"] = 2*_lambda_
# 3.2 Minimum spacing over active
drc["poly_to_poly"] = 3*_lambda_
# 3.3 Minimum gate extension of active
drc["poly_extend_active"] = 2*_lambda_
# 5.5.b Minimum spacing between poly contact and other poly (alternative rules)
drc["poly_to_polycontact"] = 4*_lambda_
# ??
drc["active_enclosure_gate"] = 0.0
# 3.5 Minimum field poly to active
drc["poly_to_active"] = _lambda_
# 3.2.a Minimum spacing over field poly
drc["poly_to_field_poly"] = 3*_lambda_
# Not a rule
drc["minarea_poly"] = 0.0
# ??
drc["active_to_body_active"] = 4*_lambda_ # Fix me
# 2.1 Minimum width
drc["minwidth_active"] = 3*_lambda_
# 2.2 Minimum spacing
drc["active_to_active"] = 3*_lambda_
# 2.3 Source/drain active to well edge
drc["well_enclosure_active"] = 6*_lambda_
# Reserved for asymmetric enclosures
drc["well_extend_active"] = 6*_lambda_
# Not a rule
drc["minarea_active"] = 0.0
# 4.1 Minimum select spacing to channel of transistor to ensure adequate source/drain width
drc["implant_to_channel"] = 3*_lambda_
# 4.2 Minimum select overlap of active
drc["implant_enclosure_active"] = 2*_lambda_
# 4.3 Minimum select overlap of contact
drc["implant_enclosure_contact"] = _lambda_
# Not a rule
drc["implant_to_contact"] = 0
# Not a rule
drc["implant_to_implant"] = 0
# Not a rule
drc["minwidth_implant"] = 0
# 6.1 Exact contact size
drc["minwidth_contact"] = 2*_lambda_
# 5.3 Minimum contact spacing
drc["contact_to_contact"] = 3*_lambda_
# 6.2.b Minimum active overlap
drc["active_enclosure_contact"] = _lambda_
# Reserved for asymmetric enclosure
drc["active_extend_contact"] = _lambda_
# 5.2.b Minimum poly overlap
drc["poly_enclosure_contact"] = _lambda_
# Reserved for asymmetric enclosures
drc["poly_extend_contact"] = _lambda_
# Reserved for other technologies
drc["contact_to_gate"] = 2*_lambda_
# 5.4 Minimum spacing to gate of transistor
drc["contact_to_poly"] = 2*_lambda_
# 7.1 Minimum width
drc["minwidth_metal1"] = 3*_lambda_
# 7.2 Minimum spacing
drc["metal1_to_metal1"] = 3*_lambda_
# 7.3 Minimum overlap of any contact
drc["metal1_enclosure_contact"] = _lambda_
# Reserved for asymmetric enclosure
drc["metal1_extend_contact"] = _lambda_
# 8.3 Minimum overlap by metal1
drc["metal1_enclosure_via1"] = _lambda_
# Reserve for asymmetric enclosures
drc["metal1_extend_via1"] = _lambda_
# Not a rule
drc["minarea_metal1"] = 0
# 8.1 Exact size
drc["minwidth_via1"] = 2*_lambda_
# 8.2 Minimum via1 spacing
drc["via1_to_via1"] = 3*_lambda_
# 9.1 Minimum width
drc["minwidth_metal2"] = 3*_lambda_
# 9.2 Minimum spacing
drc["metal2_to_metal2"] = 3*_lambda_
# 9.3 Minimum overlap of via1
drc["metal2_extend_via1"] = _lambda_
# Reserved for asymmetric enclosures
drc["metal2_enclosure_via1"] = _lambda_
# 14.3 Minimum overlap by metal2
drc["metal2_extend_via2"] = _lambda_
# Reserved for asymmetric enclosures
drc["metal2_enclosure_via2"] = _lambda_
# Not a rule
drc["minarea_metal2"] = 0
# 14.1 Exact size
drc["minwidth_via2"] = 2*_lambda_
# 14.2 Minimum spacing
drc["via2_to_via2"] = 3*_lambda_
# 15.1 Minimum width
drc["minwidth_metal3"] = 5*_lambda_
# 15.2 Minimum spacing to metal3
drc["metal3_to_metal3"] = 3*_lambda_
# 15.3 Minimum overlap of via 2
drc["metal3_extend_via2"] = 2*_lambda_
# Reserved for asymmetric enclosures
drc["metal3_enclosure_via2"] = 2*_lambda_
# Not a rule
drc["minarea_metal3"] = 0
###################################################
##END DRC/LVS Rules
###################################################
###################################################
##Spice Simulation Parameters
###################################################
# spice model info
spice={}
spice["nmos"]="n"
spice["pmos"]="p"
# This is a map of corners to model files
SPICE_MODEL_DIR=os.environ.get("SPICE_MODEL_DIR")
spice["fet_models"] = { "TT" : [SPICE_MODEL_DIR+"/nom/pmos.sp",SPICE_MODEL_DIR+"/nom/nmos.sp"],
"FF" : [SPICE_MODEL_DIR+"/ff/pmos.sp",SPICE_MODEL_DIR+"/ff/nmos.sp"],
"FS" : [SPICE_MODEL_DIR+"/ff/pmos.sp",SPICE_MODEL_DIR+"/ss/nmos.sp"],
"SF" : [SPICE_MODEL_DIR+"/ss/pmos.sp",SPICE_MODEL_DIR+"/ff/nmos.sp"],
"SS" : [SPICE_MODEL_DIR+"/ss/pmos.sp",SPICE_MODEL_DIR+"/ss/nmos.sp"],
"ST" : [SPICE_MODEL_DIR+"/ss/pmos.sp",SPICE_MODEL_DIR+"/nom/nmos.sp"],
"TS" : [SPICE_MODEL_DIR+"/nom/pmos.sp",SPICE_MODEL_DIR+"/ss/nmos.sp"],
"FT" : [SPICE_MODEL_DIR+"/ff/pmos.sp",SPICE_MODEL_DIR+"/nom/nmos.sp"],
"TF" : [SPICE_MODEL_DIR+"/nom/pmos.sp",SPICE_MODEL_DIR+"/ff/nmos.sp"],
}
#spice stimulus related variables
spice["feasible_period"] = 10 # estimated feasible period in ns
spice["supply_voltages"] = [4.5, 5.0, 5.5] # Supply voltage corners in [Volts]
spice["nom_supply_voltage"] = 5.0 # Nominal supply voltage in [Volts]
spice["rise_time"] = 0.05 # rise time in [Nano-seconds]
spice["fall_time"] = 0.05 # fall time in [Nano-seconds]
spice["temperatures"] = [0, 25, 100] # Temperature corners (celcius)
spice["nom_temperature"] = 25 # Nominal temperature (celcius)
# analytical delay parameters
spice["nom_threshold"] = 1.3 # Typical Threshold voltage in Volts
# FIXME: These need to be updated for SCMOS, they are copied from FreePDK45.
spice["wire_unit_r"] = 0.075 # Unit wire resistance in ohms/square
spice["wire_unit_c"] = 0.64 # Unit wire capacitance ff/um^2
spice["min_tx_drain_c"] = 0.7 # Minimum transistor drain capacitance in ff
spice["min_tx_gate_c"] = 0.1 # Minimum transistor gate capacitance in ff
spice["dff_setup"] = 9 # DFF setup time in ps
spice["dff_hold"] = 1 # DFF hold time in ps
spice["dff_in_cap"] = 9.8242 # Input capacitance (D) [Femto-farad]
spice["dff_out_cap"] = 2 # Output capacitance (Q) [Femto-farad]
# analytical power parameters, many values are temporary
spice["bitcell_leakage"] = 1 # Leakage power of a single bitcell in nW
spice["inv_leakage"] = 1 # Leakage power of inverter in nW
spice["nand2_leakage"] = 1 # Leakage power of 2-input nand in nW
spice["nand3_leakage"] = 1 # Leakage power of 3-input nand in nW
spice["nor2_leakage"] = 1 # Leakage power of 2-input nor in nW
spice["dff_leakage"] = 1 # Leakage power of flop in nW
spice["default_event_frequency"] = 100 # Default event activity of every gate. MHz
#Logical Effort relative values for the Handmade cells
parameter["le_tau"] = 23 #In pico-seconds.
parameter["min_inv_para_delay"] = 0.73 #In relative delay units
parameter["cap_relative_per_ff"] = 0.91 #Units of Relative Capacitance/ Femto-Farad
parameter["dff_clk_cin"] = 27.5 #In relative capacitance units
parameter["6tcell_wl_cin"] = 2 #In relative capacitance units
parameter["sa_en_pmos_size"] = 24*_lambda_
parameter["sa_en_nmos_size"] = 9*_lambda_
parameter["sa_inv_pmos_size"] = 18*_lambda_
parameter["sa_inv_nmos_size"] = 9*_lambda_
parameter["bitcell_drain_cap"] = 0.2 #In Femto-Farad, approximation of drain capacitance
###################################################
##END Spice Simulation Parameters
###################################################
###################################################
##BEGIN Technology Tool Preferences
###################################################
drc_name = "magic"
lvs_name = "netgen"
pex_name = "magic"
###################################################
##END Technology Tool Preferences
###################################################