mirror of https://github.com/VLSIDA/OpenRAM.git
Added delay function for cacti, moved cacti related delay functions to hierarchy_spice, and trimmed the functions to remove irrelevant options for OpenRAM.
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8c48520de6
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c1efa2de59
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@ -113,7 +113,8 @@ class timing_graph():
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if i == len(path) - 2:
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cout += load
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delays.append(path_edge_mod.analytical_delay(corner, cur_slew, cout))
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#delays.append(path_edge_mod.analytical_delay(corner, cur_slew, cout))
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delays.append(path_edge_mod.cacti_delay(corner, cur_slew, cout))
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cur_slew = delays[-1].slew
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return delays
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@ -419,6 +419,19 @@ class spice():
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del usedMODS
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spfile.close()
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def cacti_delay(self, corner, inrisetime, c_load=0.0):
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"""Generalization of how Cacti determines the delay of a gate"""
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# Get the r_on the the tx
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rd = self.tr_r_on()
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# Calculate the intrinsic capacitance
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c_intrinsic = self.drain_c_()
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# Calculate tau with provided output load then calc delay
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tf = rd*(c_intrinsic+c_load)
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this_delay = horowitz(inrisetime, tf, 0.5, 0.5, True)
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inrisetime = this_delay / (1.0 - 0.5);
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return delay_data(this_delay, inrisetime)
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def analytical_delay(self, corner, slew, load=0.0):
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"""Inform users undefined delay module while building new modules"""
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@ -464,6 +477,118 @@ class spice():
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self.cell_name))
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return 0
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def horowitz(inputramptime, # input rise time
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tf, # time constant of gate
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vs1, # threshold voltage
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vs2, # threshold voltage
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rise): # whether input rises or fall
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{
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if inputramptime == 0 and vs1 == vs2:
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return tf * (-math.log(vs1) if vs1 < 1 else math.log(vs1))
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a = inputramptime / tf
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if rise == RISE:
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b = 0.5;
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td = tf * sqrt(math.log(vs1)*math.log(vs1) + 2*a*b*(1.0 - vs1)) + tf*(math.log(vs1) - math.log(vs2))
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else:
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b = 0.4;
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td = tf * sqrt(math.log(1.0 - vs1)*math.log(1.0 - vs1) + 2*a*b*(vs1)) + tf*(math.log(1.0 - vs1) - math.log(1.0 - vs2))
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return td
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def tr_r_on(width, nchannel, stack, _is_cell):
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# FIXME: temp code until parameters have been determined
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if _is_cell:
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dt = tech.sram_cell #SRAM cell access transistor
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else:
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dt = tech.peri_global
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restrans = dt.R_nch_on if nchannel else dt.R_pch_on
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return stack * restrans / width
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def gate_c(width, wirelength, _is_cell)
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if _is_cell:
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dt = tech.sram_cell #SRAM cell access transistor
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else:
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dt = tech.peri_global
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return (dt.C_g_ideal + dt.C_overlap + 3*dt.C_fringe)*width + dt.l_phy*Cpolywire
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def drain_c_(width,
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nchannel,
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stack,
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next_arg_thresh_folding_width_or_height_cell,
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fold_dimension,
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_is_dram,
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_is_cell,
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_is_wl_tr,
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_is_sleep_tx):
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if _is_cell:
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dt = tech.sram_cell # SRAM cell access transistor
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else
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dt = tech.peri_global
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c_junc_area = dt.C_junc;
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c_junc_sidewall = dt.C_junc_sidewall
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c_fringe = 2*dt.C_fringe
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c_overlap = 2*dt.C_overlap
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drain_C_metal_connecting_folded_tr = 0
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# determine the width of the transistor after folding (if it is getting folded)
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if next_arg_thresh_folding_width_or_height_cell == 0:
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# interpret fold_dimension as the the folding width threshold
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# i.e. the value of transistor width above which the transistor gets folded
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w_folded_tr = fold_dimension
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else:
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# interpret fold_dimension as the height of the cell that this transistor is part of.
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h_tr_region = fold_dimension - 2 * tech.HPOWERRAIL
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# TODO : w_folded_tr must come from Component::compute_gate_area()
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ratio_p_to_n = 2.0 / (2.0 + 1.0)
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if nchannel:
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w_folded_tr = (1 - ratio_p_to_n) * (h_tr_region - tech.MIN_GAP_BET_P_AND_N_DIFFS)
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else:
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w_folded_tr = ratio_p_to_n * (h_tr_region - tech.MIN_GAP_BET_P_AND_N_DIFFS)
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num_folded_tr = int(ceil(width / w_folded_tr))
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if num_folded_tr < 2:
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w_folded_tr = width;
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total_drain_w = (tech.w_poly_contact + 2 * tech.spacing_poly_to_contact) + # only for drain
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(stack - 1) * tech.spacing_poly_to_poly
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drain_h_for_sidewall = w_folded_tr
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total_drain_height_for_cap_wrt_gate = w_folded_tr + 2 * w_folded_tr * (stack - 1)
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if num_folded_tr > 1:
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total_drain_w += (num_folded_tr - 2) * (tech.w_poly_contact + 2 * tech.spacing_poly_to_contact) +
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(num_folded_tr - 1) * ((stack - 1) * tech.spacing_poly_to_poly)
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if num_folded_tr%2 == 0:
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drain_h_for_sidewall = 0
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total_drain_height_for_cap_wrt_gate *= num_folded_tr
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drain_C_metal_connecting_folded_tr = tech.wire_local.C_per_um * total_drain_w
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drain_C_area = c_junc_area * total_drain_w * w_folded_tr
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drain_C_sidewall = c_junc_sidewall * (drain_h_for_sidewall + 2 * total_drain_w)
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drain_C_wrt_gate = (c_fringe + c_overlap) * total_drain_height_for_cap_wrt_gate
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return drain_C_area + drain_C_sidewall + drain_C_wrt_gate + drain_C_metal_connecting_folded_tr
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def cal_delay_with_rc(self, corner, r, c, slew, swing=0.5):
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"""
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Calculate the delay of a mosfet by
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@ -104,146 +104,4 @@ class cacti(simulation):
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debug.info(1, "Leakage Power: {0} mW".format(power.leakage))
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return power
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def horowitz(inputramptime, # input rise time
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tf, # time constant of gate
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vs1, # threshold voltage
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vs2, # threshold voltage
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rise): # whether input rises or fall
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{
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if inputramptime == 0 and vs1 == vs2:
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return tf * (-math.log(vs1) if vs1 < 1 else math.log(vs1))
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a = inputramptime / tf
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if rise == RISE:
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b = 0.5;
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td = tf * sqrt(math.log(vs1)*math.log(vs1) + 2*a*b*(1.0 - vs1)) + tf*(math.log(vs1) - math.log(vs2))
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else:
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b = 0.4;
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td = tf * sqrt(math.log(1.0 - vs1)*math.log(1.0 - vs1) + 2*a*b*(vs1)) + tf*(math.log(1.0 - vs1) - math.log(1.0 - vs2))
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return td
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def tr_R_on(width, nchannel, stack, _is_dram, _is_cell, _is_wl_tr, _is_sleep_tx):
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# FIXME: temp code until parameters have been determined
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if _is_dram and _is_cell:
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dt = tech.dram_acc #DRAM cell access transistor
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elif _is_dram and _is_wl_tr:
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dt = tech.dram_wl #DRAM wordline transistor
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elif not _is_dram and _is_cell:
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dt = tech.sram_cell #SRAM cell access transistor
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elif _is_sleep_tx:
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dt = tech.sleep_tx #Sleep transistor
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else:
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dt = tech.peri_global
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restrans = dt.R_nch_on if nchannel else dt.R_pch_on
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return stack * restrans / width
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def gate_C(width, wirelength, _is_dram, _is_cell, _is_wl_tr, _is_sleep_tx)
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if _is_dram and _is_cell:
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dt = tech.dram_acc #DRAM cell access transistor
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elif _is_dram and _is_wl_tr:
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dt = tech.dram_wl #DRAM wordline transistor
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elif not _is_dram and _is_cell:
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dt = tech.sram_cell #SRAM cell access transistor
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elif _is_sleep_tx:
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dt = tech.sleep_tx #Sleep transistor
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else:
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dt = tech.peri_global
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return (dt.C_g_ideal + dt.C_overlap + 3*dt.C_fringe)*width + dt.l_phy*Cpolywire
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def drain_C_(width,
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nchannel,
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stack,
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next_arg_thresh_folding_width_or_height_cell,
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fold_dimension,
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_is_dram,
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_is_cell,
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_is_wl_tr,
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_is_sleep_tx):
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if _is_dram and _is_cell:
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dt = tech.dram_acc # DRAM cell access transistor
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elif _is_dram and _is_wl_tr:
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dt = &g_tp.dram_wl # DRAM wordline transistor
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elif not _is_dram) and _is_cell:
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dt = tech.sram_cell # SRAM cell access transistor
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elif _is_sleep_tx:
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dt = tech.sleep_tx # Sleep transistor
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else
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dt = tech.peri_global
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c_junc_area = dt.C_junc;
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c_junc_sidewall = dt.C_junc_sidewall
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c_fringe = 2*dt.C_fringe
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c_overlap = 2*dt.C_overlap
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drain_C_metal_connecting_folded_tr = 0
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# determine the width of the transistor after folding (if it is getting folded)
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if next_arg_thresh_folding_width_or_height_cell == 0:
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# interpret fold_dimension as the the folding width threshold
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# i.e. the value of transistor width above which the transistor gets folded
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w_folded_tr = fold_dimension
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else:
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# interpret fold_dimension as the height of the cell that this transistor is part of.
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h_tr_region = fold_dimension - 2 * tech.HPOWERRAIL
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# TODO : w_folded_tr must come from Component::compute_gate_area()
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ratio_p_to_n = 2.0 / (2.0 + 1.0)
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if nchannel:
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w_folded_tr = (1 - ratio_p_to_n) * (h_tr_region - tech.MIN_GAP_BET_P_AND_N_DIFFS)
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else:
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w_folded_tr = ratio_p_to_n * (h_tr_region - tech.MIN_GAP_BET_P_AND_N_DIFFS)
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num_folded_tr = int(ceil(width / w_folded_tr))
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if num_folded_tr < 2:
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w_folded_tr = width;
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total_drain_w = (tech.w_poly_contact + 2 * tech.spacing_poly_to_contact) + # only for drain
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(stack - 1) * tech.spacing_poly_to_poly
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drain_h_for_sidewall = w_folded_tr
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total_drain_height_for_cap_wrt_gate = w_folded_tr + 2 * w_folded_tr * (stack - 1)
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if num_folded_tr > 1:
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total_drain_w += (num_folded_tr - 2) * (tech.w_poly_contact + 2 * tech.spacing_poly_to_contact) +
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(num_folded_tr - 1) * ((stack - 1) * tech.spacing_poly_to_poly)
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if num_folded_tr%2 == 0:
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drain_h_for_sidewall = 0
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total_drain_height_for_cap_wrt_gate *= num_folded_tr
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drain_C_metal_connecting_folded_tr = tech.wire_local.C_per_um * total_drain_w
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drain_C_area = c_junc_area * total_drain_w * w_folded_tr
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drain_C_sidewall = c_junc_sidewall * (drain_h_for_sidewall + 2 * total_drain_w)
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drain_C_wrt_gate = (c_fringe + c_overlap) * total_drain_height_for_cap_wrt_gate
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return drain_C_area + drain_C_sidewall + drain_C_wrt_gate + drain_C_metal_connecting_folded_tr
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