mirror of https://github.com/VLSIDA/OpenRAM.git
Fix missing nand4_leakage #97
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@ -438,22 +438,23 @@ spice["bitcell_leakage"] = 1 # Leakage power of a single bitcell in nW
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spice["inv_leakage"] = 1 # Leakage power of inverter in nW
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spice["inv_leakage"] = 1 # Leakage power of inverter in nW
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spice["nand2_leakage"] = 1 # Leakage power of 2-input nand in nW
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spice["nand2_leakage"] = 1 # Leakage power of 2-input nand in nW
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spice["nand3_leakage"] = 1 # Leakage power of 3-input nand in nW
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spice["nand3_leakage"] = 1 # Leakage power of 3-input nand in nW
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spice["nand4_leakage"] = 1 # Leakage power of 4-input nand in nW
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spice["nor2_leakage"] = 1 # Leakage power of 2-input nor in nW
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spice["nor2_leakage"] = 1 # Leakage power of 2-input nor in nW
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spice["dff_leakage"] = 1 # Leakage power of flop in nW
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spice["dff_leakage"] = 1 # Leakage power of flop in nW
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spice["default_event_frequency"] = 100 # Default event activity of every gate. MHz
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spice["default_event_frequency"] = 100 # Default event activity of every gate. MHz
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#Parameters related to sense amp enable timing and delay chain/RBL sizing
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# Parameters related to sense amp enable timing and delay chain/RBL sizing
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parameter["le_tau"] = 2.25 #In pico-seconds.
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parameter["le_tau"] = 2.25 # In pico-seconds.
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parameter["cap_relative_per_ff"] = 7.5 #Units of Relative Capacitance/ Femto-Farad
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parameter["cap_relative_per_ff"] = 7.5 # Units of Relative Capacitance/ Femto-Farad
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parameter["dff_clk_cin"] = 30.6 #relative capacitance
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parameter["dff_clk_cin"] = 30.6 # relative capacitance
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parameter["6tcell_wl_cin"] = 3 #relative capacitance
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parameter["6tcell_wl_cin"] = 3 # relative capacitance
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parameter["min_inv_para_delay"] = 2.4 #Tau delay units
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parameter["min_inv_para_delay"] = 2.4 # Tau delay units
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parameter["sa_en_pmos_size"] = 0.72 #micro-meters
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parameter["sa_en_pmos_size"] = 0.72 # micro-meters
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parameter["sa_en_nmos_size"] = 0.27 #micro-meters
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parameter["sa_en_nmos_size"] = 0.27 # micro-meters
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parameter["sa_inv_pmos_size"] = 0.54 #micro-meters
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parameter["sa_inv_pmos_size"] = 0.54 # micro-meters
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parameter["sa_inv_nmos_size"] = 0.27 #micro-meters
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parameter["sa_inv_nmos_size"] = 0.27 # micro-meters
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parameter["bitcell_drain_cap"] = 0.1 #In Femto-Farad, approximation of drain capacitance
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parameter["bitcell_drain_cap"] = 0.1 # In Femto-Farad, approximation of drain capacitance
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###################################################
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###################################################
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# Technology Tool Preferences
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# Technology Tool Preferences
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@ -385,22 +385,23 @@ spice["bitcell_leakage"] = 1 # Leakage power of a single bitcell in nW
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spice["inv_leakage"] = 1 # Leakage power of inverter in nW
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spice["inv_leakage"] = 1 # Leakage power of inverter in nW
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spice["nand2_leakage"] = 1 # Leakage power of 2-input nand in nW
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spice["nand2_leakage"] = 1 # Leakage power of 2-input nand in nW
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spice["nand3_leakage"] = 1 # Leakage power of 3-input nand in nW
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spice["nand3_leakage"] = 1 # Leakage power of 3-input nand in nW
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spice["nand4_leakage"] = 1 # Leakage power of 4-input nand in nW
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spice["nor2_leakage"] = 1 # Leakage power of 2-input nor in nW
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spice["nor2_leakage"] = 1 # Leakage power of 2-input nor in nW
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spice["dff_leakage"] = 1 # Leakage power of flop in nW
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spice["dff_leakage"] = 1 # Leakage power of flop in nW
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spice["default_event_frequency"] = 100 # Default event activity of every gate. MHz
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spice["default_event_frequency"] = 100 # Default event activity of every gate. MHz
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#Logical Effort relative values for the Handmade cells
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# Logical Effort relative values for the Handmade cells
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parameter["le_tau"] = 18.17 #In pico-seconds.
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parameter["le_tau"] = 18.17 # In pico-seconds.
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parameter["min_inv_para_delay"] = 2.07 #In relative delay units
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parameter["min_inv_para_delay"] = 2.07 # In relative delay units
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parameter["cap_relative_per_ff"] = .91 #Units of Relative Capacitance/ Femto-Farad
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parameter["cap_relative_per_ff"] = .91 # Units of Relative Capacitance/ Femto-Farad
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parameter["dff_clk_cin"] = 27.5 #In relative capacitance units
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parameter["dff_clk_cin"] = 27.5 # In relative capacitance units
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parameter["6tcell_wl_cin"] = 2 #In relative capacitance units
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parameter["6tcell_wl_cin"] = 2 # In relative capacitance units
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parameter["sa_en_pmos_size"] = 24*_lambda_
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parameter["sa_en_pmos_size"] = 24 * _lambda_
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parameter["sa_en_nmos_size"] = 9*_lambda_
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parameter["sa_en_nmos_size"] = 9 * _lambda_
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parameter["sa_inv_pmos_size"] = 18*_lambda_
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parameter["sa_inv_pmos_size"] = 18 * _lambda_
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parameter["sa_inv_nmos_size"] = 9*_lambda_
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parameter["sa_inv_nmos_size"] = 9 * _lambda_
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parameter["bitcell_drain_cap"] = 0.2 #In Femto-Farad, approximation of drain capacitance
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parameter["bitcell_drain_cap"] = 0.2 # In Femto-Farad, approximation of drain capacitance
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###################################################
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###################################################
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# Technology Tool Preferences
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# Technology Tool Preferences
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