mirror of https://github.com/VLSIDA/OpenRAM.git
Add separate well design rules.
Needed to fix various pgates with wells. Did some cleanup of these gates as well.
This commit is contained in:
parent
306740f0f3
commit
9beb0f4ece
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@ -68,8 +68,10 @@ class layout():
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return (base_offset, y_dir)
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def find_lowest_coords(self):
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"""Finds the lowest set of 2d cartesian coordinates within
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this layout"""
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"""
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Finds the lowest set of 2d cartesian coordinates within
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this layout
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"""
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if len(self.objs) > 0:
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lowestx1 = min(obj.lx() for obj in self.objs if obj.name != "label")
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@ -116,6 +118,54 @@ class layout():
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return vector(max(highestx1, highestx2),
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max(highesty1, highesty2))
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def find_highest_layer_coords(self, layer):
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"""
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Finds the highest set of 2d cartesian coordinates within
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this layout on a layer
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"""
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# Only consider the layer not the purpose for now
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layerNumber = techlayer[layer][0]
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try:
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highestx = max(obj.rx() for obj in self.objs if obj.layerNumber == layerNumber)
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except ValueError:
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highestx =0
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try:
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highesty = max(obj.uy() for obj in self.objs if obj.layerNumber == layerNumber)
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except ValueError:
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highesty = 0
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for inst in self.insts:
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# This really should be rotated/mirrored etc...
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subcoord = inst.mod.find_highest_layer_coords(layer) + inst.offset
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highestx = max(highestx, subcoord.x)
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highesty = max(highesty, subcoord.y)
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return vector(highestx, highesty)
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def find_lowest_layer_coords(self, layer):
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"""
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Finds the highest set of 2d cartesian coordinates within
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this layout on a layer
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"""
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# Only consider the layer not the purpose for now
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layerNumber = techlayer[layer][0]
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try:
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lowestx = min(obj.lx() for obj in self.objs if obj.layerNumber == layerNumber)
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except ValueError:
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lowestx = 0
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try:
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lowesty = min(obj.by() for obj in self.objs if obj.layerNumber == layerNumber)
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except ValueError:
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lowesty = 0
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for inst in self.insts:
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# This really should be rotated/mirrored etc...
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subcoord = inst.mod.find_lowest_layer_coords(layer) + inst.offset
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lowestx = min(lowestx, subcoord.x)
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lowesty = min(lowesty, subcoord.y)
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return vector(lowestx, lowesty)
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def translate_all(self, offset):
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"""
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Translates all objects, instances, and pins by the given (x,y) offset
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@ -429,7 +479,7 @@ class layout():
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return inst
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def add_via_center(self, layers, offset, directions=None, size=[1,1], implant_type=None, well_type=None):
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"""
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"""
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Add a three layer via structure by the center coordinate
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accounting for mirroring and rotation.
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"""
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@ -466,7 +516,7 @@ class layout():
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mults=mults,
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tx_type=tx_type)
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self.add_mod(mos)
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inst = self.add_inst(name=mos.name,
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inst = self.add_inst(name=mos.name,
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mod=mos,
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offset=offset,
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mirror=mirror,
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@ -652,22 +702,21 @@ class layout():
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vertical=False,
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make_pins=False)
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def create_bus(self, layer, pitch, offset, names, length, vertical, make_pins):
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"""
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Create a horizontal or vertical bus. It can be either just rectangles, or actual
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layout pins. It returns an map of line center line positions indexed by name.
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layout pins. It returns an map of line center line positions indexed by name.
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The other coordinate is a 0 since the bus provides a range.
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TODO: combine with channel router.
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"""
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# half minwidth so we can return the center line offsets
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half_minwidth = 0.5*drc["minwidth_{}".format(layer)]
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half_minwidth = 0.5 * drc["minwidth_{}".format(layer)]
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line_positions = {}
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if vertical:
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for i in range(len(names)):
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line_offset = offset + vector(i*pitch,0)
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line_offset = offset + vector(i * pitch, 0)
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if make_pins:
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self.add_layout_pin(text=names[i],
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layer=layer,
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@ -885,7 +934,7 @@ class layout():
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return g
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def vcg_nets_overlap(net1, net2, vertical, pitch):
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"""
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"""
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Check all the pin pairs on two nets and return a pin
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overlap if any pin overlaps.
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"""
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@ -977,12 +977,12 @@ class pbitcell(bitcell_base.bitcell_base):
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"""
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# extend pwell to encompass entire nmos region of the cell up to the
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# height of the tallest nmos transistor
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max_nmos_well_height = max(self.inverter_nmos.cell_well_height,
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self.readwrite_nmos.cell_well_height,
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self.write_nmos.cell_well_height,
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self.read_nmos.cell_well_height)
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max_nmos_well_height = max(self.inverter_nmos.well_height,
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self.readwrite_nmos.well_height,
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self.write_nmos.well_height,
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self.read_nmos.well_height)
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well_height = max_nmos_well_height + self.port_ypos \
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- self.well_enclose_active - self.gnd_position.y
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- self.nwell_enclose_active - self.gnd_position.y
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offset = vector(self.leftmost_xpos, self.botmost_ypos)
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self.add_rect(layer="pwell",
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offset=offset,
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@ -992,16 +992,16 @@ class pbitcell(bitcell_base.bitcell_base):
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# extend nwell to encompass inverter_pmos
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# calculate offset of the left pmos well
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inverter_well_xpos = -(self.inverter_nmos.active_width + 0.5 * self.inverter_to_inverter_spacing) \
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- self.well_enclose_active
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- self.nwell_enclose_active
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inverter_well_ypos = self.inverter_nmos_ypos + self.inverter_nmos.active_height \
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+ self.inverter_gap - self.well_enclose_active
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+ self.inverter_gap - self.nwell_enclose_active
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# calculate width of the two combined nwells
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# calculate height to encompass nimplant connected to vdd
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well_width = 2 * (self.inverter_nmos.active_width + 0.5 * self.inverter_to_inverter_spacing) \
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+ 2 * self.well_enclose_active
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+ 2 * self.nwell_enclose_active
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well_height = self.vdd_position.y - inverter_well_ypos \
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+ self.well_enclose_active + drc["minwidth_tx"]
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+ self.nwell_enclose_active + drc["minwidth_tx"]
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offset = [inverter_well_xpos, inverter_well_ypos]
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self.add_rect(layer="nwell",
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@ -333,7 +333,7 @@ class bank(design.design):
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self.col_addr_bus_width = self.m2_pitch*self.num_col_addr_lines
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# A space for wells or jogging m2
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self.m2_gap = max(2*drc("pwell_to_nwell") + drc("well_enclose_active"),
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self.m2_gap = max(2*drc("pwell_to_nwell") + drc("nwell_enclose_active"),
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3*self.m2_pitch)
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@ -149,7 +149,7 @@ class port_address(design.design):
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"""
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# A space for wells or jogging m2
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self.m2_gap = max(2*drc("pwell_to_nwell") + drc("well_enclose_active"),
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self.m2_gap = max(2*drc("pwell_to_nwell") + drc("nwell_enclose_active"),
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3*self.m2_pitch)
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row_decoder_offset = vector(0,0)
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@ -212,7 +212,7 @@ class port_data(design.design):
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# A space for wells or jogging m2 between modules
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self.m2_gap = max(2*drc("pwell_to_nwell") + drc("well_enclose_active"),
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self.m2_gap = max(2*drc("pwell_to_nwell") + drc("nwell_enclose_active"),
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3*self.m2_pitch)
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@ -8,7 +8,7 @@
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import contact
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import design
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import debug
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from tech import layer, drc
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from tech import layer
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from vector import vector
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from globals import OPTS
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from sram_factory import factory
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@ -127,9 +127,10 @@ class pgate(design.design):
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""" Extend the n/p wells to cover whole cell """
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# Add a rail width to extend the well to the top of the rail
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max_y_offset = self.height + 0.5 * self.m1_width
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self.nwell_position = middle_position
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nwell_height = max_y_offset - middle_position.y
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nwell_max_offset = max(self.find_highest_layer_coords("nwell").y,
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self.height + 0.5 * self.m1_width)
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nwell_position = middle_position
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nwell_height = nwell_max_offset - middle_position.y
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if "nwell" in layer:
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self.add_rect(layer="nwell",
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offset=middle_position,
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@ -137,11 +138,14 @@ class pgate(design.design):
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height=nwell_height)
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if "vtg" in layer:
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self.add_rect(layer="vtg",
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offset=self.nwell_position,
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offset=nwell_position,
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width=self.well_width,
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height=nwell_height)
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pwell_position = vector(0, -0.5 * self.m1_width)
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# Start this half a rail width below the cell
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pwell_min_offset = min(self.find_lowest_layer_coords("pwell").y,
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-0.5 * self.m1_width)
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pwell_position = vector(0, pwell_min_offset)
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pwell_height = middle_position.y - pwell_position.y
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if "pwell" in layer:
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self.add_rect(layer="pwell",
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@ -168,7 +172,7 @@ class pgate(design.design):
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# OR align the active with the top of PMOS active.
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max_y_offset = self.height + 0.5 * self.m1_width
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contact_yoffset = min(pmos_pos.y + pmos.active_height - pmos.active_contact.first_layer_height,
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max_y_offset - pmos.active_contact.first_layer_height / 2 - self.well_enclose_active)
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max_y_offset - pmos.active_contact.first_layer_height / 2 - self.nwell_enclose_active)
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contact_offset = vector(contact_xoffset, contact_yoffset)
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# Offset by half a contact in x and y
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contact_offset += vector(0.5 * pmos.active_contact.first_layer_width,
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@ -220,7 +224,7 @@ class pgate(design.design):
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# Must be at least an well enclosure of active up
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# from the bottom of the well
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contact_yoffset = max(nmos_pos.y,
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self.well_enclose_active \
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self.nwell_enclose_active \
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- nmos.active_contact.first_layer_height / 2)
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contact_offset = vector(contact_xoffset, contact_yoffset)
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@ -153,7 +153,7 @@ class pinv(pgate.pgate):
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# the well width is determined the multi-finger PMOS device width plus
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# the well contact width and half well enclosure on both sides
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self.well_width = self.pmos.active_width + self.pmos.active_contact.width \
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+ self.active_space + 2*self.well_enclose_active
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+ self.active_space + 2*self.nwell_enclose_active
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self.width = self.well_width
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# Height is an input parameter, so it is not recomputed.
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@ -223,7 +223,7 @@ class pinv(pgate.pgate):
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self.output_pos = vector(0, 0.5 * (pmos_drain_pos.y + nmos_drain_pos.y))
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# This will help with the wells
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self.well_pos = vector(0, self.nmos_inst.uy())
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self.well_pos = self.output_pos
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def route_outputs(self):
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"""
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@ -100,7 +100,7 @@ class pnand2(pgate.pgate):
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# Enclosure space on the sides.
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self.well_width = 2 * self.pmos.active_width + contact.activem1.width \
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+ 2 * self.active_space \
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+ 2 * self.well_enclose_active
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+ 2 * self.nwell_enclose_active
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self.width = self.well_width
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# Height is an input parameter, so it is not recomputed.
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@ -171,7 +171,7 @@ class pnand2(pgate.pgate):
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0.5 * (pmos1_pos.y + nmos1_pos.y + self.nmos.active_height))
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# This will help with the wells
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self.well_pos = vector(0, self.nmos1_inst.uy())
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self.well_pos = self.output_pos
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def add_well_contacts(self):
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"""
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@ -92,14 +92,11 @@ class pnand3(pgate.pgate):
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# Two PMOS devices and a well contact. Separation between each.
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# Enclosure space on the sides.
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self.well_width = 3 * self.pmos.active_width + self.pmos.active_contact.width \
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+ 2 * self.active_space + 2 * self.well_enclose_active \
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+ 2 * self.active_space + 2 * self.nwell_enclose_active \
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- self.overlap_offset.x
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self.width = self.well_width
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# Height is an input parameter, so it is not recomputed.
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# This will help with the wells and the input/output placement
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self.output_pos = vector(0, 0.5*self.height)
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# This is the extra space needed to ensure DRC rules
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# to the active contacts
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nmos = factory.create(module_type="ptx", tx_type="nmos")
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@ -178,9 +175,12 @@ class pnand3(pgate.pgate):
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self.nmos3_pos = nmos2_pos + self.overlap_offset
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self.nmos3_inst.place(self.nmos3_pos)
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# This will help with the wells and the input/output placement
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self.output_pos = vector(0, 0.5*self.height)
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# This should be placed at the top of the NMOS well
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self.well_pos = vector(0, self.nmos1_inst.uy())
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self.well_pos = self.output_pos
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def add_well_contacts(self):
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""" Add n/p well taps to the layout and connect to supplies """
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@ -98,7 +98,7 @@ class pnor2(pgate.pgate):
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self.well_width = 2 * self.pmos.active_width \
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+ self.pmos.active_contact.width \
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+ 2 * self.active_space \
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+ 2 * self.well_enclose_active
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+ 2 * self.nwell_enclose_active
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self.width = self.well_width
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# Height is an input parameter, so it is not recomputed.
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@ -136,7 +136,6 @@ class pnor2(pgate.pgate):
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mod=self.pmos)
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self.connect_inst(["net1", "B", "Z", "vdd"])
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self.nmos1_inst = self.add_inst(name="pnor2_nmos1",
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mod=self.nmos)
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self.connect_inst(["Z", "A", "gnd", "gnd"])
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@ -170,7 +169,7 @@ class pnor2(pgate.pgate):
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0.5 * (pmos1_pos.y + nmos1_pos.y + self.nmos.active_height))
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# This will help with the wells
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self.well_pos = vector(0, self.nmos1_inst.uy())
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self.well_pos = self.output_pos
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def add_well_contacts(self):
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""" Add n/p well taps to the layout and connect to supplies """
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@ -116,7 +116,7 @@ class precharge(design.design):
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# adds the lower pmos to layout
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bl_xoffset = self.bitcell.get_pin(self.bitcell_bl).lx()
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self.lower_pmos_position = vector(max(bl_xoffset - contact_xdiff,
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self.well_enclose_active),
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self.nwell_enclose_active),
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self.pmos.active_offset.y)
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self.lower_pmos_inst.place(self.lower_pmos_position)
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@ -176,7 +176,7 @@ class precharge(design.design):
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# adds the contact from active to metal1
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well_contact_pos = self.upper_pmos1_inst.get_pin("D").center().scale(1, 0) \
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+ vector(0, self.upper_pmos1_inst.uy() + contact.activem1.height / 2 \
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+ self.well_extend_active)
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+ self.nwell_extend_active)
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self.add_via_center(layers=self.active_stack,
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offset=well_contact_pos,
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implant_type="n",
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@ -44,7 +44,7 @@ class ptristate_inv(pgate.pgate):
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""" Calls all functions related to the generation of the netlist """
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self.add_pins()
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self.add_ptx()
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self.create_ptx()
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self.create_ptx()
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def create_layout(self):
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""" Calls all functions related to the generation of the layout """
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@ -61,7 +61,6 @@ class ptristate_inv(pgate.pgate):
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""" Adds pins for spice netlist """
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self.add_pin_list(["in", "out", "en", "en_bar", "vdd", "gnd"])
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def setup_layout_constants(self):
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"""
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Pre-compute some handy layout parameters.
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@ -73,7 +72,7 @@ class ptristate_inv(pgate.pgate):
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# Two PMOS devices and a well contact. Separation between each.
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# Enclosure space on the sides.
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self.well_width = 2 * self.pmos.active_width + self.well_enclose_active
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self.well_width = 2 * self.pmos.active_width + self.nwell_enclose_active
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# Add an extra space because we route the output on the right of the S/D
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self.width = self.well_width + 0.5 * self.m1_space
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@ -81,7 +80,6 @@ class ptristate_inv(pgate.pgate):
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# Make sure we can put a well above and below
|
||||
self.top_bottom_space = max(contact.activem1.width, contact.activem1.height)
|
||||
|
||||
|
||||
def add_ptx(self):
|
||||
""" Create the PMOS and NMOS transistors. """
|
||||
|
|
@ -95,7 +93,6 @@ class ptristate_inv(pgate.pgate):
|
|||
width=self.pmos_width,
|
||||
mults=1,
|
||||
tx_type="pmos")
|
||||
|
||||
self.add_mod(self.pmos)
|
||||
|
||||
def route_supply_rails(self):
|
||||
|
|
|
|||
|
|
@ -58,9 +58,9 @@ class ptx(design.design):
|
|||
# some transistor sizes in other netlist depend on pbitcell
|
||||
self.create_layout()
|
||||
|
||||
#ll = self.find_lowest_coords()
|
||||
#ur = self.find_highest_coords()
|
||||
#self.add_boundary(ll, ur)
|
||||
ll = self.find_lowest_coords()
|
||||
ur = self.find_highest_coords()
|
||||
self.add_boundary(ll, ur)
|
||||
|
||||
# (0,0) will be the corner of the active area (not the larger well)
|
||||
self.translate_all(self.active_offset)
|
||||
|
|
@ -99,7 +99,7 @@ class ptx(design.design):
|
|||
drc("minwidth_poly"))
|
||||
area_str = "pd={0:.2f}u ps={0:.2f}u as={1:.2f}p ad={1:.2f}p".format(perimeter_sd,
|
||||
area_sd)
|
||||
self.spice_device= main_str + area_str
|
||||
self.spice_device = main_str + area_str
|
||||
self.spice.append("\n* ptx " + self.spice_device)
|
||||
# self.spice.append(".ENDS {0}".format(self.name))
|
||||
|
||||
|
|
@ -124,30 +124,30 @@ class ptx(design.design):
|
|||
# This is not actually instantiated but used for calculations
|
||||
self.active_contact = factory.create(module_type="contact",
|
||||
layer_stack=self.active_stack,
|
||||
directions = ("V", "V"),
|
||||
directions=("V", "V"),
|
||||
dimensions=(1, self.num_contacts))
|
||||
|
||||
# The contacted poly pitch (or uncontacted in an odd technology)
|
||||
# The contacted poly pitch
|
||||
self.poly_pitch = max(2 * self.contact_to_gate + self.contact_width + self.poly_width,
|
||||
self.poly_space)
|
||||
|
||||
# The contacted poly pitch (or uncontacted in an odd technology)
|
||||
self.contact_pitch = 2 * self.contact_to_gate + \
|
||||
self.contact_width + self.poly_width
|
||||
# The contacted poly pitch
|
||||
self.contact_spacing = 2 * self.contact_to_gate + \
|
||||
self.contact_width + self.poly_width
|
||||
|
||||
# This is measured because of asymmetric enclosure rules
|
||||
active_enclose_contact = 0.5*(self.active_contact.width - self.contact_width)
|
||||
|
||||
# The enclosure of an active contact. Not sure about second term.
|
||||
active_enclose_contact = max(self.active_enclose_contact,
|
||||
(self.active_width - self.contact_width) / 2)
|
||||
|
||||
# This is the distance from the edge of
|
||||
# poly to the contacted end of active
|
||||
self.end_to_poly = active_enclose_contact + \
|
||||
self.contact_width + self.contact_to_gate
|
||||
# This is the distance from the side of
|
||||
# poly gate to the contacted end of active
|
||||
# (i.e. the "outside" contacted diffusion sizes)
|
||||
self.end_to_poly = self.active_contact.width - active_enclose_contact + \
|
||||
self.contact_to_gate
|
||||
|
||||
# Active width is determined by enclosure on both ends and contacted pitch,
|
||||
# at least one poly and n-1 poly pitches
|
||||
self.active_width = 2 * self.end_to_poly + self.poly_width + \
|
||||
(self.mults - 1) * self.poly_pitch
|
||||
(self.mults - 1) * self.poly_pitch
|
||||
|
||||
# Active height is just the transistor width
|
||||
self.active_height = self.tx_width
|
||||
|
|
@ -155,32 +155,35 @@ class ptx(design.design):
|
|||
# Poly height must include poly extension over active
|
||||
self.poly_height = self.tx_width + 2 * self.poly_extend_active
|
||||
|
||||
well_name = "{}well".format(self.well_type)
|
||||
|
||||
# The active offset is due to the well extension
|
||||
self.active_offset = vector([self.well_enclose_active] * 2)
|
||||
if well_name in layer:
|
||||
well_enclose_active = drc(well_name + "_enclose_active")
|
||||
self.active_offset = vector([well_enclose_active] * 2)
|
||||
else:
|
||||
self.active_offset = vector(0, 0)
|
||||
|
||||
# Well enclosure of active, ensure minwidth as well
|
||||
well_name = "{}well".format(self.well_type)
|
||||
if well_name in layer:
|
||||
self.cell_well_width = max(self.active_width + 2 * self.well_enclose_active,
|
||||
self.well_width)
|
||||
self.cell_well_height = max(self.tx_width + 2 * self.well_enclose_active,
|
||||
self.well_width)
|
||||
well_width_rule = drc("minwidth_" + well_name)
|
||||
well_enclose_active = drc(well_name + "_enclose_active")
|
||||
self.well_width = max(self.active_width + 2 * well_enclose_active,
|
||||
well_width_rule)
|
||||
self.well_height = max(self.active_height + 2 * well_enclose_active,
|
||||
well_width_rule)
|
||||
# We are going to shift the 0,0, so include that in the width and height
|
||||
self.height = self.cell_well_height - self.active_offset.y
|
||||
self.width = self.cell_well_width - self.active_offset.x
|
||||
self.height = self.well_height - self.active_offset.y
|
||||
self.width = self.well_width - self.active_offset.x
|
||||
else:
|
||||
# If no well, use the boundary of the active and poly
|
||||
# The well is not included in the height and width
|
||||
self.height = self.poly_height
|
||||
self.width = self.active_width
|
||||
|
||||
# The active offset is due to the well extension
|
||||
self.active_offset = vector([self.well_enclose_active] * 2)
|
||||
|
||||
# This is the center of the first active contact offset (centered vertically)
|
||||
self.contact_offset = self.active_offset + vector(active_enclose_contact + 0.5 * self.contact_width,
|
||||
self.contact_offset = self.active_offset + vector(0.5 * self.active_contact.width,
|
||||
0.5 * self.active_height)
|
||||
|
||||
|
||||
# Min area results are just flagged for now.
|
||||
debug.check(self.active_width * self.active_height >= self.minarea_active,
|
||||
"Minimum active area violated.")
|
||||
|
|
@ -231,8 +234,8 @@ class ptx(design.design):
|
|||
|
||||
# This is the distance that we must route up or down from the center
|
||||
# of the contacts to avoid DRC violations to the other contacts
|
||||
pin_offset = vector(0, 0.5 * self.active_contact.second_layer_height
|
||||
+ self.m1_space + 0.5 * self.m1_width)
|
||||
pin_offset = vector(0,
|
||||
0.5 * self.active_contact.second_layer_height + self.m1_space + 0.5 * self.m1_width)
|
||||
# This is the width of a m1 extend the ends of the pin
|
||||
end_offset = vector(self.m1_width / 2.0, 0)
|
||||
|
||||
|
|
@ -328,26 +331,34 @@ class ptx(design.design):
|
|||
Add an (optional) well and implant for the type of transistor.
|
||||
"""
|
||||
well_name = "{}well".format(self.well_type)
|
||||
if not (well_name in layer or "vtg" in layer):
|
||||
return
|
||||
|
||||
center_pos = self.active_offset + vector(self.width / 2.0,
|
||||
self.height / 2.0)
|
||||
well_ll = center_pos - vector(self.well_width / 2.0,
|
||||
self.well_height / 2.0)
|
||||
well_ll = well_ll - vector(0,
|
||||
self.poly_extend_active)
|
||||
|
||||
if well_name in layer:
|
||||
self.add_rect(layer=well_name,
|
||||
offset=(0,0),
|
||||
width=self.cell_well_width,
|
||||
height=self.cell_well_height)
|
||||
offset=well_ll,
|
||||
width=self.well_width,
|
||||
height=self.well_height)
|
||||
if "vtg" in layer:
|
||||
self.add_rect(layer="vtg",
|
||||
offset=(0,0),
|
||||
width=self.cell_well_width,
|
||||
height=self.cell_well_height)
|
||||
|
||||
offset=well_ll,
|
||||
width=self.well_width,
|
||||
height=self.well_height)
|
||||
|
||||
def calculate_num_contacts(self):
|
||||
"""
|
||||
"""
|
||||
Calculates the possible number of source/drain contacts in a finger.
|
||||
For now, it is hard set as 1.
|
||||
"""
|
||||
return 1
|
||||
|
||||
|
||||
def get_contact_positions(self):
|
||||
"""
|
||||
Create a list of the centers of drain and source contact positions.
|
||||
|
|
@ -361,10 +372,10 @@ class ptx(design.design):
|
|||
for i in range(self.mults):
|
||||
if i%2:
|
||||
# It's a source... so offset from previous drain.
|
||||
source_positions.append(drain_positions[-1] + vector(self.contact_pitch, 0))
|
||||
source_positions.append(drain_positions[-1] + vector(self.contact_spacing, 0))
|
||||
else:
|
||||
# It's a drain... so offset from previous source.
|
||||
drain_positions.append(source_positions[-1] + vector(self.contact_pitch, 0))
|
||||
drain_positions.append(source_positions[-1] + vector(self.contact_spacing, 0))
|
||||
|
||||
return [source_positions,drain_positions]
|
||||
|
||||
|
|
@ -379,7 +390,7 @@ class ptx(design.design):
|
|||
contact=self.add_via_center(layers=self.active_stack,
|
||||
offset=pos,
|
||||
size=(1, self.num_contacts),
|
||||
directions=("H","V"),
|
||||
directions=("V","V"),
|
||||
implant_type=self.implant_type,
|
||||
well_type=self.well_type)
|
||||
self.add_layout_pin_rect_center(text="S",
|
||||
|
|
@ -393,7 +404,7 @@ class ptx(design.design):
|
|||
contact=self.add_via_center(layers=self.active_stack,
|
||||
offset=pos,
|
||||
size=(1, self.num_contacts),
|
||||
directions=("H","V"),
|
||||
directions=("V","V"),
|
||||
implant_type=self.implant_type,
|
||||
well_type=self.well_type)
|
||||
self.add_layout_pin_rect_center(text="D",
|
||||
|
|
|
|||
|
|
@ -40,12 +40,10 @@ class pwrite_driver(design.design):
|
|||
# Creates the netlist and layout
|
||||
# Since it has variable height, it is not a pgate.
|
||||
self.create_netlist()
|
||||
if not OPTS.netlist_only:
|
||||
if not OPTS.netlist_only:
|
||||
self.create_layout()
|
||||
self.DRC_LVS()
|
||||
|
||||
|
||||
|
||||
def create_netlist(self):
|
||||
self.add_pins()
|
||||
self.add_modules()
|
||||
|
|
@ -55,8 +53,6 @@ class pwrite_driver(design.design):
|
|||
self.place_modules()
|
||||
self.route_wires()
|
||||
self.route_supplies()
|
||||
|
||||
|
||||
|
||||
def add_pins(self):
|
||||
self.add_pin("din", "INPUT")
|
||||
|
|
@ -66,17 +62,19 @@ class pwrite_driver(design.design):
|
|||
self.add_pin("vdd", "POWER")
|
||||
self.add_pin("gnd", "GROUND")
|
||||
|
||||
|
||||
def add_modules(self):
|
||||
|
||||
# Tristate inverter
|
||||
self.tri = factory.create(module_type="ptristate_inv", height="min")
|
||||
self.add_mod(self.tri)
|
||||
debug.check(self.tri.width<self.width,"Could not create tristate inverter to match bitcell width")
|
||||
debug.check(self.tri.width<self.width,
|
||||
"Could not create tristate inverter to match bitcell width")
|
||||
|
||||
#self.tbuf = factory.create(module_type="ptristate_buf", height="min")
|
||||
#self.tbuf = factory.create(module_type="ptristate_buf",
|
||||
#height="min")
|
||||
#self.add_mod(self.tbuf)
|
||||
#debug.check(self.tbuf.width<self.width,"Could not create tristate buffer to match bitcell width")
|
||||
#debug.check(self.tbuf.width<self.width,
|
||||
#"Could not create tristate buffer to match bitcell width")
|
||||
|
||||
# Inverter for din and en
|
||||
self.inv = factory.create(module_type="pinv", under_rail_vias=True)
|
||||
|
|
|
|||
|
|
@ -145,7 +145,10 @@ drc["minlength_channel"] = 0.05
|
|||
drc["pwell_to_nwell"] = 0.225
|
||||
# WELL.3 Minimum spacing of nwell/pwell at the same potential
|
||||
# WELL.4 Minimum width of nwell/pwell
|
||||
drc.add_layer("well",
|
||||
drc.add_layer("nwell",
|
||||
width = 0.2,
|
||||
spacing = 0.135)
|
||||
drc.add_layer("pwell",
|
||||
width = 0.2,
|
||||
spacing = 0.135)
|
||||
|
||||
|
|
@ -174,7 +177,10 @@ drc.add_layer("active",
|
|||
width = 0.09,
|
||||
spacing = 0.08)
|
||||
# ACTIVE.3 Minimum enclosure/spacing of nwell/pwell to active
|
||||
drc.add_enclosure("well",
|
||||
drc.add_enclosure("nwell",
|
||||
layer = "active",
|
||||
enclosure = 0.055)
|
||||
drc.add_enclosure("pwell",
|
||||
layer = "active",
|
||||
enclosure = 0.055)
|
||||
|
||||
|
|
|
|||
|
|
@ -126,11 +126,14 @@ drc["layer_map"]=os.environ.get("OPENRAM_TECH")+"/scn3me_subm/layers.map"
|
|||
drc["minwidth_tx"] = 4*_lambda_
|
||||
drc["minlength_channel"] = 2*_lambda_
|
||||
|
||||
# 1.4 Minimum spacing between wells of different type (if both are drawn)
|
||||
# 1.4 Minimum spacing between wells of different type (if both are drawn)
|
||||
drc["pwell_to_nwell"] = 0
|
||||
# 1.3 Minimum spacing between wells of same type (if both are drawn)
|
||||
# 1.1 Minimum width
|
||||
drc.add_layer("well",
|
||||
# 1.1 Minimum width
|
||||
drc.add_layer("nwell",
|
||||
width = 12*_lambda_,
|
||||
spacing = 6*_lambda_)
|
||||
drc.add_layer("pwell",
|
||||
width = 12*_lambda_,
|
||||
spacing = 6*_lambda_)
|
||||
|
||||
|
|
@ -157,7 +160,10 @@ drc.add_layer("active",
|
|||
spacing = 4*_lambda_)
|
||||
|
||||
# 2.3 Source/drain active to well edge
|
||||
drc.add_enclosure("well",
|
||||
drc.add_enclosure("nwell",
|
||||
layer = "active",
|
||||
enclosure = 6*_lambda_)
|
||||
drc.add_enclosure("pwell",
|
||||
layer = "active",
|
||||
enclosure = 6*_lambda_)
|
||||
|
||||
|
|
|
|||
Loading…
Reference in New Issue