mirror of https://github.com/VLSIDA/OpenRAM.git
added binning to precharge pmos
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parent
6981cfa58b
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764601a721
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@ -7,6 +7,7 @@
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#
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from .rom_base_cell import rom_base_cell
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from .pgate import pgate
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from openram.base import vector
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from openram import OPTS
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from openram.sram_factory import factory
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@ -30,10 +31,11 @@ class rom_precharge_cell(rom_base_cell):
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def add_modules(self):
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width = pgate.nearest_bin("pmos", drc["minwidth_tx"])
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self.pmos = factory.create(module_type="ptx",
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module_name="pre_pmos_mod",
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tx_type="pmos",
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width=width,
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add_source_contact=self.supply_layer,
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add_drain_contact=self.bitline_layer
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)
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@ -29,6 +29,8 @@ class rom_array_test(openram_test):
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a = factory.create(module_type="rom_base_array", cols=9, rows=8, bitmap=data, strap_spacing=4, pitch_match=True)
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self.local_check(a)
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a.sp_write(OPTS.openram_temp + 'simulation_file.sp')
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openram.end_openram()
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# run the test from the command line
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