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Add redundant implant for s8

This commit is contained in:
mrg 2020-06-15 10:08:07 -07:00
parent 355474ce2c
commit 4cb827c3d7
1 changed files with 26 additions and 10 deletions
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34
compiler/pgates/single_level_column_mux.py
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@ -11,7 +11,7 @@ from tech import drc, layer
from vector import vector from vector import vector
from sram_factory import factory from sram_factory import factory
import logical_effort import logical_effort
from utils import round_to_grid from globals import OPTS
class single_level_column_mux(pgate.pgate): class single_level_column_mux(pgate.pgate):
@ -113,18 +113,21 @@ class single_level_column_mux(pgate.pgate):
# This aligns it directly above the other tx with gates abutting # This aligns it directly above the other tx with gates abutting
nmos_upper_position = nmos_lower_position \ nmos_upper_position = nmos_lower_position \
+ vector(0, self.nmos.active_height + max(self.active_space,self.poly_space)) + vector(0, self.nmos.active_height + max(self.active_space, self.poly_space))
self.nmos_upper = self.add_inst(name="mux_tx2", self.nmos_upper = self.add_inst(name="mux_tx2",
mod=self.nmos, mod=self.nmos,
offset=nmos_upper_position) offset=nmos_upper_position)
self.connect_inst(["br", "sel", "br_out", "gnd"]) self.connect_inst(["br", "sel", "br_out", "gnd"])
if OPTS.tech_name == "sky130":
self.add_implants()
def connect_poly(self): def connect_poly(self):
""" Connect the poly gate of the two pass transistors """ """ Connect the poly gate of the two pass transistors """
# offset is the top of the lower nmos' diffusion # offset is the top of the lower nmos' diffusion
# height is the distance between the nmos' diffusions, which depends on max(self.active_space,self.poly_space) # height is the distance between the nmos' diffusions, which depends on max(self.active_space,self.poly_space)
offset = self.nmos_lower.get_pin("G").ul() - vector(0,self.poly_extend_active) offset = self.nmos_lower.get_pin("G").ul() - vector(0, self.poly_extend_active)
height = self.nmos_upper.get_pin("G").by() + self.poly_extend_active - offset.y height = self.nmos_upper.get_pin("G").by() + self.poly_extend_active - offset.y
self.add_rect(layer="poly", self.add_rect(layer="poly",
offset=offset, offset=offset,
@ -183,13 +186,26 @@ class single_level_column_mux(pgate.pgate):
vector(nmos_lower_s_pin.cx(), br_out_pin.uy()), vector(nmos_lower_s_pin.cx(), br_out_pin.uy()),
nmos_lower_s_pin.center()]) nmos_lower_s_pin.center()])
# halfway up, move over # halfway up, move over
mid1 = br_pin.bc().scale(1,0.5) \ mid1 = br_pin.bc().scale(1, 0.5) \
+ nmos_lower_d_pin.uc().scale(0,0.5) + nmos_lower_d_pin.uc().scale(0, 0.5)
mid2 = br_pin.bc().scale(0,0.5) \ mid2 = br_pin.bc().scale(0, 0.5) \
+ nmos_lower_d_pin.uc().scale(1,0.5) + nmos_lower_d_pin.uc().scale(1, 0.5)
self.add_path(self.col_mux_stack[2], self.add_path(self.col_mux_stack[2],
[br_pin.bc(), mid1, mid2, nmos_lower_d_pin.center()]) [br_pin.bc(), mid1, mid2, nmos_lower_d_pin.center()])
def add_implants(self):
"""
Add top-to-bottom implants for adjacency issues in s8.
"""
# Route to the bottom
ll = (self.nmos_lower.ll() - vector(2 * [self.implant_enclose_active])).scale(1, 0)
# Don't route to the top
ur = self.nmos_upper.ur() + vector(self.implant_enclose_active, 0)
self.add_rect("nimplant",
ll,
ur.x - ll.x,
ur.y - ll.y)
def add_pn_wells(self): def add_pn_wells(self):
""" """
Add a well and implant over the whole cell. Also, add the Add a well and implant over the whole cell. Also, add the
@ -209,8 +225,8 @@ class single_level_column_mux(pgate.pgate):
offset=active_pos) offset=active_pos)
# Add the M1->..->power_grid_layer stack # Add the M1->..->power_grid_layer stack
self.add_power_pin(name = "gnd", self.add_power_pin(name="gnd",
loc = active_pos, loc=active_pos,
start_layer="m1") start_layer="m1")
# Add well enclosure over all the tx and contact # Add well enclosure over all the tx and contact