mirror of
https://github.com/VLSIDA/OpenRAM.git
synced 2026-08-29 17:39:02 +02:00
Replaced analytical characterization with graph implementation. Removed most analytical delay functions used by old chacterizer.
This commit is contained in:
@@ -148,17 +148,7 @@ class bitcell_array(design.design):
|
||||
for pin_name in ["vdd", "gnd"]:
|
||||
for pin in inst.get_pins(pin_name):
|
||||
self.add_power_pin(name=pin_name, loc=pin.center(), vertical=True, start_layer=pin.layer)
|
||||
|
||||
def analytical_delay(self, corner, slew, load):
|
||||
"""Returns relative delay of the bitline in the bitcell array"""
|
||||
from tech import parameter
|
||||
#The load being driven/drained is mostly the bitline but could include the sense amp or the column mux.
|
||||
#The load from the bitlines is due to the drain capacitances from all the other bitlines and wire parasitics.
|
||||
drain_load = logical_effort.convert_farad_to_relative_c(parameter['bitcell_drain_cap'])
|
||||
wire_unit_load = .05 * drain_load #Wires add 5% to this.
|
||||
bitline_load = (drain_load+wire_unit_load)*self.row_size
|
||||
return [self.cell.analytical_delay(corner, slew, load+bitline_load)]
|
||||
|
||||
|
||||
def analytical_power(self, corner, load):
|
||||
"""Power of Bitcell array and bitline in nW."""
|
||||
from tech import drc, parameter
|
||||
|
||||
Reference in New Issue
Block a user