mirror of https://github.com/VLSIDA/OpenRAM.git
Small format cleanup
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@ -7,7 +7,7 @@
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#
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import contact
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import debug
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from tech import drc, parameter
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from tech import drc, parameter, layer
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from vector import vector
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from ptx import ptx
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from globals import OPTS
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@ -975,6 +975,7 @@ class pbitcell(bitcell_base.bitcell_base):
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"""
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Connects wells between ptx modules and places well contacts
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"""
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if "pwell" in layer:
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# extend pwell to encompass entire nmos region of the cell up to the
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# height of the tallest nmos transistor
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max_nmos_well_height = max(self.inverter_nmos.well_height,
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@ -993,6 +994,7 @@ class pbitcell(bitcell_base.bitcell_base):
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# extend nwell to encompass inverter_pmos
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# calculate offset of the left pmos well
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if "nwell" in layer:
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inverter_well_xpos = -(self.inverter_nmos.active_width + 0.5 * self.inverter_to_inverter_spacing) \
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- self.nwell_enclose_active
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inverter_well_ypos = self.inverter_nmos_ypos + self.inverter_nmos.active_height \
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@ -196,6 +196,8 @@ class ptx(design.design):
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# The well is not included in the height and width
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self.height = self.poly_height
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self.width = self.active_width
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self.well_height = self.height
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self.well_width = self.width
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# This is the center of the first active contact offset (centered vertically)
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self.contact_offset = self.active_offset + vector(0.5 * self.active_contact.width,
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