mirror of https://github.com/VLSIDA/OpenRAM.git
More exact input spacing in pnand3
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parent
78c66d7c34
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@ -12,7 +12,7 @@ from vector import vector
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import logical_effort
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from sram_factory import factory
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from globals import OPTS
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import contact
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class pnand3(pgate.pgate):
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"""
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@ -209,12 +209,21 @@ class pnand3(pgate.pgate):
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def route_inputs(self):
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""" Route the A and B and C inputs """
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# We can use this pitch because the contacts and overlap won't be adjacent
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non_contact_pitch = 0.5 * self.m1_width + self.m1_space + 0.5 * contact.poly_contact.second_layer_height
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pmos_drain_bottom = self.pmos1_inst.get_pin("D").by()
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self.output_yoffset = pmos_drain_bottom - 0.5 * self.route_layer_width - self.route_layer_space
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bottom_pin = self.nmos1_inst.get_pin("D")
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self.inputA_yoffset = max(bottom_pin.uy() + self.m1_pitch,
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self.nmos1_inst.uy() + self.poly_to_active)
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# active contact metal to poly contact metal spacing
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active_contact_to_poly_contact = bottom_pin.uy() + self.m1_space + 0.5 * contact.poly_contact.second_layer_height
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# active diffusion to poly contact spacing
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# doesn't use nmos uy because that is calculated using offset + poly height
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active_to_poly_contact = self.nmos1_inst.by() + self.nmos1_inst.mod.active_height \
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+ self.poly_to_active + 0.5 * contact.poly_contact.first_layer_height
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self.inputA_yoffset = max(active_contact_to_poly_contact,
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active_to_poly_contact)
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self.route_input_gate(self.pmos1_inst,
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self.nmos1_inst,
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self.inputA_yoffset,
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@ -222,14 +231,14 @@ class pnand3(pgate.pgate):
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position="left")
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# Put B right on the well line
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self.inputB_yoffset = self.inputA_yoffset + self.m1_pitch
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self.inputB_yoffset = self.inputA_yoffset + non_contact_pitch
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self.route_input_gate(self.pmos2_inst,
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self.nmos2_inst,
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self.inputB_yoffset,
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"B",
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position="center")
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self.inputC_yoffset = self.inputB_yoffset + self.m1_pitch
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self.inputC_yoffset = self.inputB_yoffset + non_contact_pitch
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self.route_input_gate(self.pmos3_inst,
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self.nmos3_inst,
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self.inputC_yoffset,
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