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### [Go Back](./index.md#table-of-contents)
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# Results
This page of the documentation explains the results of OpenRAM.
## Table of Contents
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1. [Small Layouts ](#small-layouts )
1. [Relative Planar Bitcells ](#relative-planar-bitcells-035um-scmos )
1. [SRAM Area ](#sram-area )
1. [Generated Layout by OpenRAM ](#generated-layout-by-openram-for-a-multiport-6r2w-sram-in-32-nm-soi-cmos-technology )
1. [Timing and Density Results for Generated SRAMs ](#timing-and-density-results-for-generated-srams )
1. [Comparison with Fabricated SRAMs ](#comparison-with-fabricated-srams )
1. [Conclusions ](#conclusions )
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## Small Layouts
| < img width = "320" src = "../assets/images/results/small_layouts_1.png" > | < img width = "320" src = "../assets/images/results/small_layouts_2.png" > |
| :----------------------------------------------------------: | :----------------------------------------------------------: |
| 512 x 16b x 1rw FreePDK45 | 2048 x 32b x 1rw FreePDK45 |
## Relative Planar Bitcells (0.35um SCMOS)
| < img height = "184" src = "../assets/images/bitcells/6t.png" > | < img height = "278" src = "../assets/images/bitcells/10t.png" > | < img height = "424" src = "../assets/images/bitcells/dff.png" > |
| :-----------------------------------------------: | :------------------------------------------------: | :--------------------------------------------------: |
| Standard 6T (1rw) 6.8um x 9.2um | Isolated Read 10T (1rw, 1r) 10.9um x 13.9um | DFF 21.9um x 21.2um (from OSU standard cell library) |
## SRAM Area

## Generated Layout by OpenRAM for a multiport (6R/2W) SRAM in 32 nm SOI CMOS Technology

## Timing and Density Results for Generated SRAMs

## Comparison with Fabricated SRAMs
| $\textrm{Reference}$ | $\textrm{Feature Size}$ | $\textrm{Technology}$ | $\textrm{Density } (Mb/mm^2)$ |
| :---------------------- | :---------------------: | :-------------------: | :---------------------------: |
| $\textrm{IEEE-VLSI'08}$ | $65 nm$ | $\textrm{CMOS}$ | $0.7700$ |
| $\textrm{JSSC'11}$ | $45 nm$ | $\textrm{CMOS}$ | $0.3300$ |
| $\textrm{JSSC'13}$ | $40 nm$ | $\textrm{CMOS}$ | $0.9400$ |
| $\textrm{OpenRAM}$ | $45 nm$ | $\textrm{FreePDK45}$ | $0.8260$ |
| $\textrm{JSSC'92}$ | $0.5 \mu m$ | $\textrm{CMOS}$ | $0.0036$ |
| $\textrm{JSSC'94}$ | $0.5 \mu m$ | $\textrm{BICMOS}$ | $0.0020$ |
| $\textrm{JSSC'99}$ | $0.5 \mu m$ | $\textrm{CMOS}$ | $0.0050$ |
| $\textrm{OpenRAM}$ | $0.5 \mu m$ | $\textrm{SCMOS}$ | $0.0050$ |
## Conclusions
* The main motivation behind OpenRAM is to promote and simplify memory-related research in academia and provides a platform to implement and test new memory designs.
* OpenRAM is open-sourced, flexible, and portable and can be adapted to various technologies.
* OpenRAM generates the circuit, functional model, and layout of variable-sized SRAMs.
* OpenRAM provides a memory characterizer for synthesis timing/power models.
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* We are also actively introducing new features, such as non-6T memories, variability characterization, word-line segmenting, characterization speed-up, etc.