v {xschem version=3.4.7RC file_version=1.2} G {} K {} V {} S {} E {} B 2 880 -290 1430 -110 {flags=graph y1=-42 y2=12 ypos1=0 ypos2=2 divy=5 subdivy=1 unity=1 x1=0.0035110393 x2=0.0037319804 divx=5 subdivx=1 xlabmag=1.0 ylabmag=1.0 node="batt supply diode g1 g2" color="4 7 17 12 21" dataset=-1 unitx=1 logx=0 logy=0 hilight_wave=-1 linewidth_mult=1.2} B 2 880 -400 1430 -290 {flags=graph y1=-0.00023 y2=12 ypos1=0 ypos2=2 divy=5 subdivy=1 unity=1 x1=0.0035110393 x2=0.0037319804 divx=5 subdivx=1 xlabmag=1.5 ylabmag=1.0 dataset=-1 unitx=1 logx=0 logy=0 hilight_wave=2 color="4 7" node="pwm1 g1" linewidth_mult=1.2} B 2 880 -500 1430 -400 {flags=graph y1=-1.5 y2=36 ypos1=0 ypos2=2 divy=5 subdivy=1 unity=1 x1=0.0035110393 x2=0.0037319804 divx=5 subdivx=1 xlabmag=1.5 ylabmag=1.0 dataset=-1 unitx=1 logx=0 logy=0 hilight_wave=-1 color="4 7 17" node="i(vm1) i(vbatt) i(vind)" linewidth_mult=1.2} B 2 880 -590 1430 -500 {flags=graph y1=0 y2=61 ypos1=0 ypos2=2 divy=5 subdivy=1 unity=1 x1=0.0035110393 x2=0.0037319804 divx=5 subdivx=1 xlabmag=1.5 ylabmag=1.0 dataset=-1 unitx=1 logx=0 logy=0 hilight_wave=-1 color="4 7" node="i(vbatt) batt * 24u ravg() i(vm1) supply * 24u ravg()" linewidth_mult=1.2} B 2 880 -700 1430 -590 {flags=graph y1=0 y2=2.8 ypos1=0 ypos2=2 divy=5 subdivy=1 unity=1 x1=0.0035110393 x2=0.0037319804 divx=5 subdivx=1 xlabmag=1.5 ylabmag=1.0 dataset=-1 unitx=1 logx=0 logy=0 hilight_wave=-1 linewidth_mult=1.2 color=4 node="M1_PWR;supply diode - i(vm1) * 24u ravg()"} T {@name} 235 -168.75 0 0 0.2 0.2 {name=Rind1} T {@value} 235 -156.25 0 0 0.2 0.2 {name=Rind1} T {m=@m} 235 -143.75 0 0 0.2 0.2 {name=Rind1} T {@name} 315 -228.75 0 0 0.2 0.2 {name=l8} T {@value} 235 -216.25 0 0 0.2 0.2 {name=l8} T {m=@m} 235 -203.75 0 0 0.2 0.2 {name=l8} T {@name} 505 -368.75 0 0 0.2 0.2 {name=XD2} T {@model} 505 -356.25 0 0 0.2 0.2 {name=XD2} N 780 -330 800 -330 {lab=BATT} N 780 -120 780 -100 {lab=0} N 680 -330 680 -180 {lab=BATT} N 680 -120 680 -100 {lab=0} N 780 -330 780 -240 {lab=BATT} N 680 -330 780 -330 {lab=BATT} N 400 -330 500 -330 {lab=DIODE} N 110 -430 150 -430 {lab=G1} N -50 -430 30 -430 {lab=PWM1} N 80 -170 80 -100 {lab=0} N 80 -330 80 -230 {lab=SUPPLY} N 300 -250 300 -240 {lab=#net1} N 300 -120 300 -100 {lab=0} N 560 -330 680 -330 {lab=BATT} N 80 -330 120 -330 {lab=SUPPLY} N 150 -430 150 -370 {lab=G1} N 300 -330 340 -330 {lab=#net2} N 280 -330 300 -330 {lab=#net2} N 180 -330 220 -330 {lab=#net3} N 300 -330 300 -310 {lab=#net2} C {title.sym} 160 -30 0 0 {name=l1 author="Stefan Schippers"} C {code_shown.sym} 10 -740 0 0 { name=CONTROL tclcommand="xschem edit_vi_prop" place=end value=" .ic v(diode)=12 v(batt)=42 .param VCC=12 .include stimuli_buck_boost.cir .option method=gear gmin=1e-10 + itl1=1000 itl2=100 itl4=1000 itl5=0 .control save all tran 0.02u 5000u uic remzerovec write buck_boost.raw quit 0 .endc "} C {launcher.sym} 935 -85 0 0 {name=h2 descr="Simulate" tclcommand="set_sim_defaults; set sim(spice,0,fg) 1; xschem netlist; xschem simulate;xschem raw_read $netlist_dir/buck_boost.raw tran" } C {res.sym} 780 -150 0 0 {name=RLOAD value=30 footprint=1206 device=resistor m=1} C {lab_pin.sym} 800 -330 2 0 {name=l6 lab=BATT} C {lab_pin.sym} 780 -100 0 0 {name=l2 lab=0} C {capa.sym} 680 -150 0 0 {name=C1 m=1 value="20u ic=42" footprint=1206 device="ceramic capacitor"} C {lab_pin.sym} 680 -100 0 0 {name=l7 lab=0} C {lab_wire.sym} 420 -330 0 1 {name=l10 lab=DIODE} C {lab_pin.sym} 80 -330 0 0 {name=l11 lab=SUPPLY} C {ammeter.sym} 780 -210 0 1 {name=vbatt} C {launcher.sym} 1160 -90 0 0 {name=h5 descr="load waves" tclcommand="xschem raw_read $netlist_dir/buck_boost.raw tran" } C {ipin.sym} -50 -430 0 0 {name=p3 lab=PWM1} C {ammeter.sym} 370 -330 1 0 {name=vdiode} C {diode.sym} 530 -330 1 0 {name=XD2 model=STPST15H100SB area=1 format="@name @pinlist @model" device_model=" ******************************************************************* * Model name : STPST15H100SB * Description : 100 V - 15 A power Schottky trench diode * Package type : DPAK ******************************************************************* *model STPST15H100SB anode * | cathode * | | * | | .subckt STPST15H100SB 1 2 r1 1 13 0.1E-3 r2 1 13 0.1E-3 d1 13 2 dx .model dx D(IS=383.61E-9 N=1.0502 RS=10.043E-3 IKF=3.9178 CJO=2.0881E-9 M=1.0083 + VJ=5.1229 ISR=262.18E-9 TT=0 EG=.69 XTI=2 FC=0.5) .ends " hide_texts=true attach=XD2} C {lab_pin.sym} 80 -100 0 0 {name=l3 lab=0} C {ind.sym} 300 -210 0 0 {name=l8 value="50u ic=5" hide_texts=true attach=l8} C {res.sym} 300 -150 0 0 {name=Rind1 value=0.05 footprint=1206 device=resistor m=1 hide_texts=true attach=Rind1} C {lab_wire.sym} 150 -430 0 1 {name=l4 lab=G1} C {buf_ngspice.sym} 70 -430 0 0 {name=x1 RUP=10 RDOWN=10} C {vsource.sym} 80 -200 0 0 {name=VSUPPLY value=12 savecurrent=false} C {lab_pin.sym} 300 -100 0 0 {name=l12 lab=0} C {pmos3.sym} 150 -350 3 1 {name=XM1 model=irf5305 m=1 device_model=" .SUBCKT irfr5410 1 2 3 ************************************** * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * *Commercial Use or Resale Restricted * * by Symmetry License Agreement * ************************************** * Model generated on Mar 8, 01 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model (Version 1.0) * External Node Designations * Node 1 -> Drain * Node 2 -> Gate * Node 3 -> Source M1 9 7 8 8 MM L=100u W=100u .MODEL MM PMOS LEVEL=1 IS=1e-32 +VTO=-4.10332 LAMBDA=0.044529 KP=3.57307 +CGSO=5.98432e-06 CGDO=1e-11 RS 8 3 0.110361 D1 1 3 MD .MODEL MD D IS=2.32858e-09 RS=0.0349622 N=1.5 BV=100 +IBV=0.00025 EG=1 XTI=1 TT=0.0001 +CJO=5.85483e-10 VJ=0.500001 M=0.463449 FC=0.5 RDS 3 1 1e+06 RD 9 1 0.0177033 RG 2 7 9.86001 D2 5 4 MD1 * Default values used in MD1: * RS=0 EG=1.11 XTI=3.0 TT=0 * BV=infinite IBV=1mA .MODEL MD1 D IS=1e-32 N=50 +CJO=1.41944e-09 VJ=1.36483 M=0.723945 FC=1e-08 D3 5 0 MD2 * Default values used in MD2: * EG=1.11 XTI=3.0 TT=0 CJO=0 * BV=infinite IBV=1mA .MODEL MD2 D IS=1e-10 N=1 RS=3.0002e-06 RL 5 10 1 FI2 7 9 VFI2 -1 VFI2 4 0 0 EV16 10 0 9 7 1 CAP 11 10 2.27857e-09 FI1 7 9 VFI1 -1 VFI1 11 6 0 RCAP 6 10 1 D4 6 0 MD3 * Default values used in MD3: * EG=1.11 XTI=3.0 TT=0 CJO=0 * RS=0 BV=infinite IBV=1mA .MODEL MD3 D IS=1e-10 N=1 .ENDS irfr5410 .SUBCKT irf5305 1 2 3 ************************************** * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * *Commercial Use or Resale Restricted * * by Symmetry License Agreement * ************************************** * Model generated on Apr 23, 96 * Model format: SPICE3 * Symmetry POWER MOS Model (Version 1.0) * External Node Designations * Node 1 -> Drain * Node 2 -> Gate * Node 3 -> Source M1 9 7 8 8 MM L=100u W=100u * Default values used in MM: * The voltage-dependent capacitances are * not included. Other default values are: * RS=0 RD=0 LD=0 CBD=0 CBS=0 CGBO=0 .MODEL MM PMOS LEVEL=1 IS=1e-32 +VTO=-3.45761 LAMBDA=0 KP=10.066 +CGSO=1.03141e-05 CGDO=1e-11 RS 8 3 0.0262305 D1 1 3 MD .MODEL MD D IS=8.90854e-09 RS=0.00921723 N=1.5 BV=55 +IBV=0.00025 EG=1.2 XTI=3.13635 TT=1e-07 +CJO=1.30546e-09 VJ=0.663932 M=0.419045 FC=0.5 RDS 3 1 2.2e+06 RD 9 1 0.0001 RG 2 7 11.0979 D2 5 4 MD1 * Default values used in MD1: * RS=0 EG=1.11 XTI=3.0 TT=0 * BV=infinite IBV=1mA .MODEL MD1 D IS=1e-32 N=50 +CJO=1.63729e-09 VJ=0.791199 M=0.552278 FC=1e-08 D3 5 0 MD2 * Default values used in MD2: * EG=1.11 XTI=3.0 TT=0 CJO=0 * BV=infinite IBV=1mA .MODEL MD2 D IS=1e-10 N=0.400245 RS=3e-06 RL 5 10 1 FI2 7 9 VFI2 -1 VFI2 4 0 0 EV16 10 0 9 7 1 CAP 11 10 1.89722e-09 FI1 7 9 VFI1 -1 VFI1 11 6 0 RCAP 6 10 1 D4 6 0 MD3 * Default values used in MD3: * EG=1.11 XTI=3.0 TT=0 CJO=0 * RS=0 BV=infinite IBV=1mA .MODEL MD3 D IS=1e-10 N=0.400245 .ENDS "} C {ammeter.sym} 250 -330 3 1 {name=vm1} C {ammeter.sym} 300 -280 0 1 {name=vind}