v {xschem version=3.4.7RC file_version=1.2} G {} K {} V {} S {} E {} B 2 880 -290 1430 -110 {flags=graph y1=0.00013 y2=45 ypos1=0 ypos2=2 divy=5 subdivy=1 unity=1 x1=0.0042932407 x2=0.0044053357 divx=5 subdivx=1 xlabmag=1.0 ylabmag=1.0 node="batt supply diode g1 g2" color="4 7 17 12 21" dataset=-1 unitx=1 logx=0 logy=0 hilight_wave=-1 linewidth_mult=1.2} B 2 880 -400 1430 -290 {flags=graph y1=0 y2=13 ypos1=0 ypos2=2 divy=5 subdivy=1 unity=1 x1=0.0042932407 x2=0.0044053357 divx=5 subdivx=1 xlabmag=1.5 ylabmag=1.0 dataset=-1 unitx=1 logx=0 logy=0 hilight_wave=2 color="4 7" node="pwm1 g1" linewidth_mult=1.2} B 2 880 -500 1430 -400 {flags=graph y1=1.3 y2=7.5 ypos1=0 ypos2=2 divy=5 subdivy=1 unity=1 x1=0.0042932407 x2=0.0044053357 divx=5 subdivx=1 xlabmag=1.5 ylabmag=1.0 dataset=-1 unitx=1 logx=0 logy=0 hilight_wave=-1 color="4 7" node="i(vm1) i(vbatt)" linewidth_mult=1.2} B 2 880 -590 1430 -500 {flags=graph y1=0 y2=78 ypos1=0 ypos2=2 divy=5 subdivy=1 unity=1 x1=0.0042932407 x2=0.0044053357 divx=5 subdivx=1 xlabmag=1.5 ylabmag=1.0 dataset=-1 unitx=1 logx=0 logy=0 hilight_wave=-1 color="4 7" node="i(vbatt) batt * 24u ravg() i(vm1) supply * 24u ravg()" linewidth_mult=1.2} B 2 880 -700 1430 -590 {flags=graph y1=-0.014 y2=2.6 ypos1=0 ypos2=2 divy=5 subdivy=1 unity=1 x1=0.0042932407 x2=0.0044053357 divx=5 subdivx=1 xlabmag=1.5 ylabmag=1.0 dataset=-1 unitx=1 logx=0 logy=0 hilight_wave=-1 color="4 10 8" node="M3_PWR; diode i(vm3) * 24u ravg() D2_PWR; i(vm2) diode batt - * 24u ravg() L_PWR;L1 DIODE - i(vm1) * 24u ravg()" linewidth_mult=1.2} T {@name} 295 -318.75 0 0 0.2 0.2 {name=Rind1} T {@value} 295 -306.25 0 0 0.2 0.2 {name=Rind1} T {m=@m} 295 -293.75 0 0 0.2 0.2 {name=Rind1} T {@name} 205 -318.75 0 0 0.2 0.2 {name=l8} T {@value} 205 -306.25 0 0 0.2 0.2 {name=l8} T {m=@m} 205 -293.75 0 0 0.2 0.2 {name=l8} T {@name} 655 -308.75 0 1 0.2 0.2 {name=XD2} T {@model} 655 -296.25 0 1 0.2 0.2 {name=XD2} N 780 -270 800 -270 {lab=BATT} N 780 -120 780 -100 {lab=0} N 680 -270 680 -180 {lab=BATT} N 680 -120 680 -100 {lab=0} N 780 -270 780 -240 {lab=BATT} N 680 -270 780 -270 {lab=BATT} N 490 -270 590 -270 {lab=DIODE} N 370 -270 430 -270 {lab=#net1} N 160 -270 190 -270 {lab=#net2} N 650 -270 680 -270 {lab=BATT} N 80 -270 100 -270 {lab=SUPPLY} N 370 -120 370 -100 {lab=0} N 340 -270 370 -270 {lab=#net1} N 290 -150 330 -150 {lab=G1} N 170 -150 210 -150 {lab=PWM1} N 250 -270 280 -270 {lab=L1} N 370 -270 370 -240 {lab=#net1} C {title.sym} 160 -30 0 0 {name=l1 author="Stefan Schippers"} C {code_shown.sym} 10 -740 0 0 { name=CONTROL tclcommand="xschem edit_vi_prop" place=end value=" .ic v(diode)=12 v(batt)=42 .param VCC=12 .include stimuli_boost.cir .option method=gear gmin=1e-12 + itl1=1000 itl2=1000 itl4=1000 itl5=0 .control save all tran 0.02u 5000u uic remzerovec write boost.raw quit 0 .endc "} C {launcher.sym} 935 -85 0 0 {name=h2 descr="Simulate" tclcommand="set_sim_defaults; set sim(spice,0,fg) 1; xschem netlist; xschem simulate;xschem raw_read $netlist_dir/boost.raw tran"} C {res.sym} 780 -150 0 0 {name=RLOAD value=30 footprint=1206 device=resistor m=1} C {lab_pin.sym} 800 -270 2 0 {name=l6 lab=BATT} C {lab_pin.sym} 780 -100 0 0 {name=l2 lab=0} C {capa.sym} 680 -150 0 0 {name=C1 m=1 value="30u ic=42" footprint=1206 device="ceramic capacitor"} C {lab_pin.sym} 680 -100 0 0 {name=l7 lab=0} C {lab_wire.sym} 530 -270 0 1 {name=l10 lab=DIODE} C {lab_pin.sym} 80 -270 0 0 {name=l11 lab=SUPPLY} C {ammeter.sym} 780 -210 0 1 {name=vbatt} C {launcher.sym} 1160 -90 0 0 {name=h5 descr="load waves" tclcommand="xschem raw_read $netlist_dir/boost.raw tran" } C {ipin.sym} 170 -150 0 0 {name=p3 lab=PWM1} C {ammeter.sym} 460 -270 3 1 {name=vm2} C {ammeter.sym} 130 -270 3 1 {name=vm1} C {diode.sym} 620 -270 3 1 {name=XD2 model=STPST15H100SB area=1 format="@name @pinlist @model" device_model=" ******************************************************************* * Model name : STPST15H100SB * Description : 100 V - 15 A power Schottky trench diode * Package type : DPAK ******************************************************************* *model STPST15H100SB anode * | cathode * | | * | | .subckt STPST15H100SB 1 2 r1 1 13 0.1E-3 r2 1 13 0.1E-3 d1 13 2 dx .model dx D(IS=383.61E-9 N=1.0502 RS=10.043E-3 IKF=3.9178 CJO=2.0881E-9 M=1.0083 + VJ=5.1229 ISR=262.18E-9 TT=0 EG=.69 XTI=2 FC=0.5) .ends " hide_texts=true attach=XD2} C {nmos3.sym} 350 -150 0 0 {name=xm3 model=irf540 m=1 program=evince url="https://www.vishay.com/docs/91021/irf540.pdf" device_model=" .SUBCKT irf540 1 2 3 M1 9 7 8 8 MM L=100u W=100u * Default values used in MM: * The voltage-dependent capacitances are * not included. Other default values are: * RS=0 RD=0 LD=0 CBD=0 CBS=0 CGBO=0 .MODEL MM NMOS LEVEL=1 IS=1e-32 +VTO=3.56362 LAMBDA=0.00291031 KP=25.0081 +CGSO=1.60584e-05 CGDO=4.25919e-07 RS 8 3 0.0317085 D1 3 1 MD .MODEL MD D IS=1.02194e-10 RS=0.00968022 N=1.21527 BV=100 +IBV=0.00025 EG=1.2 XTI=3.03885 TT=1e-07 +CJO=1.81859e-09 VJ=1.1279 M=0.449161 FC=0.5 RDS 3 1 4e+06 RD 9 1 0.0135649 RG 2 7 5.11362 D2 4 5 MD1 * Default values used in MD1: * RS=0 EG=1.11 XTI=3.0 TT=0 * BV=infinite IBV=1mA .MODEL MD1 D IS=1e-32 N=50 +CJO=2.49697e-09 VJ=0.5 M=0.9 FC=1e-08 D3 0 5 MD2 * Default values used in MD2: * EG=1.11 XTI=3.0 TT=0 CJO=0 * BV=infinite IBV=1mA .MODEL MD2 D IS=1e-10 N=0.4 RS=3e-06 RL 5 10 1 FI2 7 9 VFI2 -1 VFI2 4 0 0 EV16 10 0 9 7 1 CAP 11 10 2.49697e-09 FI1 7 9 VFI1 -1 VFI1 11 6 0 RCAP 6 10 1 D4 0 6 MD3 * Default values used in MD3: * EG=1.11 XTI=3.0 TT=0 CJO=0 * RS=0 BV=infinite IBV=1mA .MODEL MD3 D IS=1e-10 N=0.4 .ENDS " xdevice_model=" .SUBCKT IRF540 2 1 3 ; rev 19 July 1999 CA 12 8 1.95e-9 CB 15 14 1.90e-9 CIN 6 8 1.12e-9 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 112.8 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1 IT 8 17 1 LDRAIN 2 5 1.0e-9 LGATE 1 9 6.19e-9 LSOURCE 3 7 2.18e-9 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 2.00e-2 RGATE 9 20 1.77 RLDRAIN 2 5 10 RLGATE 1 9 26 RLSOURCE 3 7 11 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 6.5e-3 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE=\{(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*71),3.5))\} .MODEL DBODYMOD D (IS = 1.20e-12 RS = 4.2e-3 XTI = 5 TRS1 = 1.3e-3 TRS2 = 8.0e-6 CJO = 1.50e-9 TT = 7.47e-8 M = 0.63) .MODEL DBREAKMOD D (RS = 4.2e-1 TRS1 = 8e-4 TRS2 = 3e-6) .MODEL DPLCAPMOD D (CJO = 1.45e-9 IS = 1e-30 M = 0.82) .MODEL MMEDMOD NMOS (VTO = 3.11 KP = 5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.77) .MODEL MSTROMOD NMOS (VTO = 3.57 KP = 33.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 2.68 KP = 0.09 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 17.7 ) .MODEL RBREAKMOD RES (TC1 =1.05e-3 TC2 = -5e-7) .MODEL RDRAINMOD RES (TC1 = 9.40e-3 TC2 = 2.93e-5) .MODEL RSLCMOD RES (TC1 = 3.5e-3 TC2 = 2.0e-6) .MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6) .MODEL RVTHRESMOD RES (TC1 = -1.8e-3 TC2 = -8.6e-6) .MODEL RVTEMPMOD RES (TC1 = -3.0e-3 TC2 =1.5e-7) * .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.2 VOFF= -3.1) * .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.1 VOFF= -6.2) * .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.0 VOFF= 0.5) * .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.0) .MODEL S1AMOD sw RON = 0.1 ROFF = 1e-5 VT = -3.1 VH= 3.1 .MODEL S1BMOD sw RON = 1e-5 ROFF = 0.1 VT = -3.1 VH= 3.1 .MODEL S2AMOD sw RON = 0.1 ROFF = 1e-5 VT = 0.5 VH= 1.5 .MODEL S2BMOD sw RON = 1e-5 ROFF = 0.1 VT = 0.5 VH= 1.5 .ENDS " } C {lab_pin.sym} 370 -100 0 0 {name=l3 lab=0} C {ind.sym} 220 -270 3 0 {name=l8 value="50u ic=5" hide_texts=true attach=l8} C {res.sym} 310 -270 3 0 {name=Rind1 value=0.05 footprint=1206 device=resistor m=1 hide_texts=true attach=Rind1} C {ammeter.sym} 370 -210 0 1 {name=vm3} C {lab_wire.sym} 300 -150 0 1 {name=l4 lab=G1} C {buf_ngspice.sym} 250 -150 0 0 {name=x1 RUP=20 RDOWN=20} C {lab_wire.sym} 260 -270 0 1 {name=l5 lab=L1}