31 lines
791 B
Plaintext
31 lines
791 B
Plaintext
Gallium Arsenide Resistor
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* This transient simulation demonstrates the effects of velocity overshoot
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* and velocity saturation at high lateral electric fields.
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* Do not try to do DC analysis of this resistor. It will not converge
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* because of the peculiar characteristics of the GaAs velocity-field
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* relation. In some cases, problems can arise in transient simulation
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* as well.
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VPP 1 0 1v PWL 0s 0.0v 10s 1v
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VNN 2 0 0.0v
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D1 1 2 M_RES AREA=1
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.MODEL M_RES numd level=1
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+ options resistor defa=1p
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+ x.mesh loc=0.0 num=1
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+ x.mesh loc=1.0 num=101
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+ domain num=1 material=1
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+ material num=1 gaas
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+ doping unif n.type conc=2.5e16
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+ models fieldmob srh auger conctau
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+ method ac=direct
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*.OP
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*.DC VPP 0.0v 10.01v 0.1v
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.TRAN 1s 10.001s 0s 0.1s
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.PRINT TRAN I(VPP)
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.OPTION ACCT BYPASS=1
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.END
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