58 lines
1.6 KiB
Plaintext
58 lines
1.6 KiB
Plaintext
Emitter Coupled Pair
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VCC 1 0 5v
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VEE 2 0 0v
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RCP 1 11 10k
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RCN 1 21 10k
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VBBP 12 0 3v AC 1
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VBBN 22 0 3v
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IEE 13 2 0.1mA
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Q1 11 12 13 M_NPN AREA=8
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Q2 21 22 13 M_NPN AREA=8
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.DC VBBP 2.75v 3.25001v 10mv
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.PRINT V(21) V(11)
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.MODEL M_NPN nbjt level=2
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+ title TWO-DIMENSIONAL NUMERICAL POLYSILICON EMITTER BIPOLAR TRANSISTOR
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+ * Since, we are only simulating half of a device, we double the unit width
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+ * 1.0 um emitter length
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+ options defw=2.0u
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+
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+ *x.mesh w=2.5 n=5
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+ x.mesh w=2.0 h.e=0.05 h.m=0.2 r=1.5
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+ x.mesh w=0.5 h.s=0.05 h.m=0.1 r=1.5
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+
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+ y.mesh l=-0.2 n=1
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+ y.mesh l= 0.0 n=5
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+ y.mesh w=0.10 h.e=0.002 h.m=0.01 r=1.5
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+ y.mesh w=0.15 h.s=0.002 h.m=0.01 r=1.5
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+ y.mesh w=0.35 h.s=0.01 h.m=0.2 r=1.5
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+ y.mesh w=0.40 h.e=0.05 h.m=0.2 r=1.5
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+ y.mesh w=0.30 h.s=0.05 h.m=0.1 r=1.5
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+
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+ domain num=1 material=1 x.l=2.0 y.h=0.0
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+ domain num=2 material=2 x.h=2.0 y.h=0.0
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+ domain num=3 material=3 y.l=0.0
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+ material num=1 polysilicon
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+ material num=2 oxide
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+ material num=3 silicon
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+
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+ elec num=1 x.l=0.0 x.h=0.0 y.l=1.1 y.h=1.3
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+ elec num=2 x.l=0.0 x.h=0.5 y.l=0.0 y.h=0.0
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+ elec num=3 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=-0.2
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+
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+ doping gauss n.type conc=3e20 x.l=2.0 x.h=3.0 y.l=-0.2 y.h=0.0
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+ + char.l=0.047 lat.rotate
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+ doping gauss p.type conc=1e19 x.l=0.0 x.h=5.0 y.l=-0.2 y.h=0.0
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+ + char.l=0.094 lat.rotate
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+ doping unif n.type conc=1e16 x.l=0.0 x.h=5.0 y.l=0.0 y.h=1.3
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+ doping gauss n.type conc=5e19 x.l=0.0 x.h=5.0 y.l=1.3 y.h=1.3
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+ + char.l=0.100 lat.rotate
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+
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+ method ac=direct itlim=10
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+ models bgn srh auger conctau concmob fieldmob
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.OPTIONS ACCT BYPASS=1
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.END
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