DEVICES
---------------------------------------------------------------------------

This file contains the status of devices available in ngspice. This file 
will be updated every time the device pecific code is altered or changed. 
This file it is useful in writing ngspice documentation.


***************************************************************************
*************************  Linear devices  ********************************
***************************************************************************

CAP 	- Capacitor
	Initial Release.
	Ver: 	N/A
	Class:	C
	Level:	1 (and only)
	Status:
	
	Enhancements over the original model:
	
	- Parallel Multiplier
	- Temperature difference from circuit temperature
	- Preliminary technology scaling support
	- Model capacitance
	- Cj calculation based on relative dielectric constant
	  and insulator thickness 

IND 	- Inductor
      	Initial Release.
	Ver: 	N/A
	Class:	L
	Level:	1 (and only)
	Status:
	
	Enhancements over the original model:
	
	- Parallel Multiplier
	- Temperature difference from circuit temperature
	- Preliminary technology scaling support
	- Model inductance
	- Inductance calculation for toroids or solenoids
	  on the model line. 

RES	- Simple linear resistor
	Initial Release.
	Ver:	N/A
	Class:	R
	Level:	1 (and only)
	Status:	
		
	Enhancements over the original model:
	
	- Parallel Multiplier
	- Different value for ac analysis
	- Temperature difference from circuit temperature
	- Noiseless resistor
	- Flicker noise
	- Preliminary technology scaling support
      

***************************************************************************
********************* Distributed elements ********************************
***************************************************************************
		     
TRA  - Transmission line
      Initial release
     
LTRA - Lossy Transmission line
      Initial release
     
URC  - Uniform distributed RC line
      Initial release		     


***************************************************************************
****************************    V/I Sources   *****************************
***************************************************************************

ASRC  - Arbitrary Source
      Initial Release

CCCS  - Current Controlled Current Source
      Initial Release

CCVS  - Current Controlled Voltage Source
      Initial Release
      
ISRC  - Independent Current Source
      Initial Release
      
VCCS  - Voltage Controlled Current Source
      Initial Release

VCVS  - Voltage Controlled Voltage Source
      Initial Release

VSRC  - Independent Voltage Source
      Initial Release

                     
***************************************************************************
****************************      Switches     ****************************
***************************************************************************
		     
CSW - Current controlled switch
      Initial release

SW  - Voltage controlled switch		     
      Initial release		   
		   
		     
***************************************************************************
****************************      Diodes       ****************************      
***************************************************************************

DIO   - Junction Diode
        Initial Release.
	Ver: 	N/A
	Class:	D
	Level:	1 (and only) 
	Status: 
	
	Enhancements over the original model:
	
	- Parallel Multiplier
	- Temperature difference from circuit temperature
	- Forward and reverse knee currents
	- Periphery (sidewall) effects
	- Temperature correction of some parameters

                     
***************************************************************************
*************************     Bipolar Devices     *************************
***************************************************************************
      
BJT   - Bipolar Junction Transistor
        Initial Release.
	Ver: 	N/A
	Class:	Q
	Level:	1 
	Status: 
	
	Enhancements over the original model:
	
	- Parallel Multiplier
	- Temperature difference from circuit temperature
	- Different area parameters for collector, base and emitter

BJT2  - Bipolar Junction Trasistor
	Initial Release.
	Ver: 	N/A
	Class:	Q
	Level:	2 
	Status:
	
	This is the BJT model written by Alan Gillespie to support lateral
	devices. The model has been hacked by Dietmar Warning fixing some bugs
	and adding some features (temp. correction on resistors).
	
	Enhancements over the original model:
	
	- Temperature correction on rc,rb,re
	- Parallel Multiplier
	- Temperature difference from circuit temperature
	- Different area parameters for collector, base and emitter
      

***************************************************************************
*****************************    FET Devices    ***************************
***************************************************************************
		     
JFET  - Junction Field Effect transistor
        Initial Release.
	Ver: 	N/A
	Class:	J
	Level:	1 
	Status:
	
	This is the original spice JFET model.
	
	Enhancements over the original model:
	
	- Alan Gillespie's modified diode model
	- Parallel multiplier
	- Instance temperature as difference for circuit temperature
        
JFET2 - Junction Field Effect Transistor  (PS model)
        Initial Release.
	Ver: 	N/A
	Class:	J
	Level:	2 
	Status:
	
	This is the Parker Skellern model.
	
	Web Site:
	http://www.elec.mq.edu.au/cnerf/models/psmodel/
	
	Enhancements over the original model:
	
	- Parallel multiplier
	- Instance temperature as difference for circuit temperature


***************************************************************************
***************************    HFET devices     ***************************
***************************************************************************
           
HFET  - HFET Level 1 (MacSpice3f4)
        Initial Release.
	Ver: 	N/A
	Class:	Z
	Level:	5 
	Status:
	
	
	Enhancements over the original model:
	
	- Parallel multiplier
	- Instance temperature as difference for circuit temperature
	- Added pole-zero analysis

     
HFET2 - HFET Level 2 (MacSpice3f4)
        Initial Release.
	Ver: 	N/A
	Class:	Z
	Level:	6 
	Status:
	
	
	Enhancements over the original model:
	
	- Parallel multiplier
	- Instance temperature as difference for circuit temperature
	- Added pole-zero analysis

***************************************************************************
***************************     MES devices     ***************************
***************************************************************************
		
MES   - MESfet model
        Initial Release.
	Ver: 	N/A
	Class:	Z
	Level:	1 
	Status:
	
	
	Enhancements over the original model:
	
	- Parallel multiplier
	- Alan Gillespie junction diodes implementation
      
MESA  - MESA model (MacSpice3f4)
        Initial Release.
	Ver: 	N/A
	Class:	Z
	Level:	2,3,4 
	Status:
	
	This is a multilevel model. It contains code for mesa levels
	2,3 and 4
	
	Enhancements over the original model:
	
	- Parallel multiplier
	- Instance temperature as difference from circuit temperature
	- Added pole-zero analysis
		 
***************************************************************************
****************************    MOS devices    ****************************
***************************************************************************
 
MOS1  - Level 1 MOS model
      Initial Release.
      Ver:    N/A
      Class:  M
      Level:  1
      Status: 
      
      This is the so-called Schichman-Hodges model. 
      
      Enhancements over the original model:
      
      - Parallel multiplier
      - Temperature difference from circuit temperature
      

MOS2  - Level 2 MOS model
      Initial Release.
      Ver:    N/A
      Class:  M
      Level:  2
      Status: 
      
      This is the so-called  Grove-Frohman model. 
      
      Enhancements over the original model:
      
      - Parallel multiplier
      - Temperature difference from circuit temperature


MOS3  - Level 3 MOS model
      Initial Release.
      Ver:    N/A
      Class:  M
      Level:  3
      Status:  
      
      Enhancements over the original model:
      
      - Parallel multiplier
      - Temperature difference from circuit temperature
      

MOS6  - Level 6 MOS model
      Initial Release.
      Ver:    N/A
      Class:  M
      Level:  6
      Status: 

      Enhancements over the original model:
      
      - Parallel multiplier
      - Temperature difference from circuit temperature


MOS9  - Level 9 MOS model
      Initial Release.
      Ver:    N/A
      Class:  M
      Level:  9
      Status: 

      Enhancements over the original model:
      
      - Temperature difference from circuit temperature


BSIM1 - BSIM model level 1
      Initial Release.
      Ver:    N/A
      Class:  M
      Level:  4
      Status: 
      
      Enhancements over the original model:
      
      - Parallel multiplier
      - Noise analysis
      
      BUGS:
      
      Distortion analysis probably does not 
      work with "parallel" devices. Equations
      are too intricate to deal with. Any one
      has ideas on the subject ?


BSIM2 - BSIM model level 2
      Initial Release.
      Ver:    N/A
      Class:  M
      Level:  5
      Status: 
      
      Enhancements over the original model:
      
      - Parallel multiplier
      - Noise analysis


BSIM3 - BSIM model level 3
      Initial Release.
      Ver:    3.2.4
      Class:  M
      Level:  8
      Status: TO BE TESTED 
      
      This is the BSIM3v3.2.4 model from Berkeley device group.  
      You can find some test netlists with results for this model
      on its web site.
      
      Web site:
      http://www-device.eecs.berkeley.edu/~bsim3
      
      Enhancements over the original model:
	
	- Parallel Multiplier
	- ACM Area Calculation Method
	- Multirevision code (supports all 3v3.2 minor revisions)
	- NodesetFix  

BSIM3v1 - BSIM model level 3
        Initial Release.
        Ver:    N/A
        Class:  M
        Level:  49
        Status: TO BE TESTED AND IMPROVED
        
        This is the BSIM3v3.1 model modified by Serban Popescu. 
        This is level 49 model. It is an implementation that supports 
        "HDIF" and "M" parameters.
        

BSIM3v2 - BSIM model level 3
        Initial Relese.
        Ver:    3.2
        Class:  M
        Level:  50
        Status: TO BE TESTED

        This is the BSIM3v3.2 model. It is included only for compatibility
        with existing netlists and parameters files. As always, tests
        are availabe on the Berkeley's device group site.
        
        Web site:
        http://www-device.eecs.berkeley.edu/~bsim3

BSIM4   - BSIM model level 4 (0.18 um)
        Initial Release. 
        Ver:    4.2.1 (Updated in rework 14)
        Class:  M
        Level:  14
        Status: TO BE TESTED
        
        This is the BSIM4 device model from Berkeley Device Group.
        Test are available on its web site.
        
        Web site:
        http://www-device.eecs.berkeley.edu/~bsim3/bsim4.html
      
      *) Rework 14: Updated to 4.21 YET UNTESTED.
	 
HiSIM	- Hiroshima-university STARC IGFET Model
	Initial Release.
	Ver:	1.2.0
	Class:	M
	Level:	TBD
	Status:	TO BE TESTED
	
	This is the HiSIM model available from Hiroshima University
	(Ultra-Small Device Engineering Laboratory)
	
	Web site:
	http://home.hiroshima-u.ac.jp/usdl/HiSIM.shtml
	http://www.starc.or.jp/kaihatu/pdgr/hisim/index.html
	
	Enhancements over the original model:
	
	- Parallel Multiplier
	- NodesetFix
	
***************************************************************************	 
*****************************    SOI Devices   ****************************
***************************************************************************


BSIM3SOI_FD - SOI model (fully depleted devices)
      Initial Release.
      Ver:    2.1. 
      Class:  M
      Level:  11
      Status: TO BE TESTED.
      
      FD model has been integrated.
      There is a bsim3soifd directory under the test
      hierarchy. Test circuits come from the bsim3soi
      
      Web site at:
      http://www-device.eecs.berkeley.edu/~bsimsoi

      *) rework-14: removed #ifndef NEWCONV code.
         


BSIM3SOI_PD - SOI model (partially depleted devices)
      Initial Release.
      Ver:    2.2.1
      Class:  M
      Level:  10 
      Status: TO BE TESTED.
      
      PD model has been integrated. 
      There is a bsim3soipd directory under the test
      hierarchy. Test circuits come from the bsim3soi
      
      Web site at: 
      http://www-device.eecs.berkeley.edu/~bsimsoi

      *) rework-14: removed #ifndef NEWCONV code.

BSIM3SOI_DD - SOI Model (dynamic depletion model)
     Initial Release. 
     Ver:    2.1
     Class:  M
     Level:  12
     Status: TO BE TESTED.
     
     There is a bsim3soidd directory under the
     test hierarchy. Test circuits come from bsim3soi
     
     Web site at:
     http://www-device.eecs.berkeley.edu/~bsimsoi
    
     *) rework-14: removed #ifndef NEWCONV code.

SOI3 - STAG SOI3 Model
       Initial Release. 
       Ver:    2.6
       Class:  M
       Level:  62
       Status: TO BE TESTED
       
       Web site at:
       http://www.micro.ecs.soton.ac.uk/stag/
       
***************************************************************************
**************** Other devices not released as source code ****************
***************************************************************************

EKV  - EKV model
       Initial Release. 
       Ver:    2.6
       Class:  M
       Level:  44
       Status: TO BE TESTED
       
       Note: This model is not released in source code.
       You have to obtain the source code from the address below.
       
       Web site at:
       http://legwww.epfl.ch/ekv/