DEVICES
---------------------------------------------------------------------------

This file contains the status of devices available in ngspice. This file
will be updated every time the device specific code is altered or changed.
This file is useful in writing ngspice documentation.


***************************************************************************
*************************  Linear devices  ********************************
***************************************************************************

CAP     - Capacitor
        Initial Release.
        Ver:    N/A
        Class:  C
        Level:  1 (and only)
        Dir:    devices/cap
        Status:

        Enhancements over the original model:

        - Parallel Multiplier
        - Temperature difference from circuit temperature
        - Preliminary technology scaling support
        - Model capacitance
        - Cj calculation based on relative dielectric constant
          and insulator thickness

IND     - Inductor
        Initial Release.
        Ver:    N/A
        Class:  L
        Level:  1 (and only)
        Dir:    devices/ind
        Status:

        Enhancements over the original model:

        - Parallel Multiplier
        - Temperature difference from circuit temperature
        - Preliminary technology scaling support
        - Model inductance
        - Inductance calculation for toroids or solenoids
          on the model line.

RES     - Simple linear resistor
        Initial Release.
        Ver:    N/A
        Class:  R
        Level:  1 (and only)
        Dir:    devices/res
        Status:

        Enhancements over the original model:

        - Parallel Multiplier
        - Different value for ac analysis
        - Temperature difference from circuit temperature
        - Noiseless resistor
        - Flicker noise
        - Preliminary technology scaling support


***************************************************************************
********************* Distributed elements ********************************
***************************************************************************

CPL     - Simple Coupled Multiconductor Lines (Kspice)
        Initial Release.
        Ver:    N/A
        Class:  P
        Level:  1 (and only)
        Dir:    devices/cpl
        Status:

        This model comes from swec and kspice. It is not documented, if
        you have kspice docs, can you write a short description
        of its use ?

        - Does not implement parallel code switches
        - Probably a lot of memory leaks

        Enhancements over the original model:

        - Better integrated into ngspice adding CPLask, CPLmAsk and
        CPLunsetup functions


LTRA    - Lossy Transmission line
        Initial Release.
        Ver:    N/A
        Class:  O
        Level:  1 (and only)
        Dir:    devices/ltra
        Status:

        Original spice model.

        - Does not implement parallel code switches

TRA     - Transmission line
        Initial Release.
        Ver:    N/A
        Class:  T
        Level:  1 (and only)
        Dir:    devices/tra
        Status:

        Original spice model.

        - Does not implement parallel code switches

TXL     - Simple Lossy Transmission Line (Kspice)
        Initial Release.
        Ver:    N/A
        Class:  Y
        Level:  1 (and only)
        Dir:    devices/txl
        Status:

        This model comes from kspice. It is not documented, if
        you have kspice docs, can you write a short description
        of its use ?

        There is some code left out from compilation:
        TXLaccept and TXLfindBr. Any ideas ?

        - Does not implement parallel code switches


URC     - Uniform distributed RC line
        Initial Release.
        Ver:    N/A
        Class:  U
        Level:  1 (and only)
        Dir:    devices/urc
        Status:

        Original spice model.

        - Does not implement parallel code switches


***************************************************************************
****************************    V/I Sources   *****************************
***************************************************************************

ASRC    - Arbitrary Source
        Initial Release.
        Ver:    N/A
        Class:  B
        Level:  1 (and only)
        Dir:    devices/asrc
        Status:

        The arbitrary source code has been corrected with the patch
        available on the Internet. There is still an issue to fix, the
        current of current-controlled generators.

CCCS    - Current Controlled Current Source
        Initial Release.
        Ver:    N/A
        Class:  F
        Level:  1 (and only)
        Dir:    devices/cccs
        Status:

        Original spice model.

CCVS    - Current Controlled Voltage Source
        Initial Release.
        Ver:    N/A
        Class:  H
        Level:  1 (and only)
        Dir:    devices/ccvs
        Status:

        Original spice model.

ISRC    - Independent Current Source
        Initial Release.
        Ver:    N/A
        Class:  I
        Level:  1 (and only)
        Dir:    devices/isrc
        Status:

        This is the original spice device improved by Alan Gillespie
        with the following features:

        - Source ramping
        - Check for non-monotonic series in PWL


VCCS    - Voltage Controlled Current Source
        Initial Release.
        Ver:    N/A
        Class:  G
        Level:  1 (and only)
        Dir:    devices/vccs
        Status:

        Original spice model.

VCVS    - Voltage Controlled Voltage Source
        Initial Release.
        Ver:    N/A
        Class:  E
        Level:  1 (and only)
        Dir:    devices/vcvs
        Status:

        Original spice model.

VSRC    - Independent Voltage Source
        Initial Release.
        Ver:    N/A
        Class:  V
        Level:  1 (and only)
        Dir:    devices/vsrc
        Status:

        This is the original spice device improved by Alan Gillespie
        with the following features:

        - Source ramping
        - Check for non-monotonic series in PWL


***************************************************************************
****************************      Switches     ****************************
***************************************************************************

CSW     - Current controlled switch
        Initial Release.
        Ver:    N/A
        Class:  W
        Level:  1 (and only)
        Dir:    devices/csw
        Status:

        This model comes from Jon Engelbert


SW      - Voltage controlled switch
        Initial release
        Ver:    N/A
        Class:  S
        Level:  1 (and only)
        Dir:    devices/sw
        Status:

        This model comes from Jon Engelbert


***************************************************************************
****************************      Diodes       ****************************
***************************************************************************

DIO     - Junction Diode
        Initial Release.
        Ver:    N/A
        Class:  D
        Level:  1 (and only)
        Dir:    devices/dio
        Status:

        Enhancements over the original model:

        - Parallel Multiplier
        - Temperature difference from circuit temperature
        - Forward and reverse knee currents
        - Periphery (sidewall) effects
        - Temperature correction of some parameters


***************************************************************************
*************************     Bipolar Devices     *************************
***************************************************************************

BJT     - Bipolar Junction Transistor
        Initial Release.
        Ver:    N/A
        Class:  Q
        Level:  1
        Dir:    devices/bjt
        Status:

        Enhancements over the original model:

        - Parallel Multiplier
        - Temperature difference from circuit temperature
        - Different area parameters for collector, base and emitter

BJT2    - Bipolar Junction Transistor
        Initial Release.
        Ver:    N/A
        Class:  Q
        Level:  2
        Dir:    devices/bjt2
        Status:

        This is the BJT model written by Alan Gillespie to support lateral
        devices. The model has been hacked by Dietmar Warning fixing some bugs
        and adding some features (temp. correction on resistors).

        Enhancements over the original model:

        - Temperature correction on rc,rb,re
        - Parallel Multiplier
        - Temperature difference from circuit temperature
        - Different area parameters for collector, base and emitter

VBIC    - Bipolar Junction Transistor
        Initial Release.
        Ver:    N/A
        Class:  Q
        Level:  4
        Dir:    devices/vbic
        Status:

        This is the Vertical Bipolar InterCompany model.
        The author of VBIC is Colin McAndrew mcandrew@ieee.org
        Spice3 Implementation: Dietmar Warning DAnalyse GmbH
                               warning@danalyse.de
        Web Site:
        http://www.designers-guide.com/VBIC/index.html

        Notes: This is the 4 terminals model, without excess phase
        and thermal network.


***************************************************************************
*****************************    FET Devices    ***************************
***************************************************************************

JFET    - Junction Field Effect transistor
        Initial Release.
        Ver:    N/A
        Class:  J
        Level:  1
        Dir:    devices/jfet
        Status:

        This is the original spice JFET model.

        Enhancements over the original model:

        - Alan Gillespie's modified diode model
        - Parallel multiplier
        - Instance temperature as difference for circuit temperature

JFET2   - Junction Field Effect Transistor  (PS model)
        Initial Release.
        Ver:    N/A
        Class:  J
        Level:  2
        Dir:    devices/jfet2
        Status:

        This is the Parker Skellern model for MESFETs.

        Web Site:
        http://www.elec.mq.edu.au/cnerf/models/psmodel/

        Enhancements over the original model:

        - Parallel multiplier
        - Instance temperature as difference for circuit temperature


***************************************************************************
***************************    HFET devices     ***************************
***************************************************************************

   Added code from macspice3f4 HFET1&2 and MESA model 
   Original note:
     Added device calls for Mesfet models and HFET models
     provided by Trond Ytterdal as of Nov 98 

HFET1   - Heterostructure Field Effect Transistor Level 1
        Initial Release.
        Ver:    N/A
        Class:  Z
        Level:  5
        Dir:    devices/hfet1
        Status:

        This is the Heterostructure Field Effect Transistor model from:
        K. Lee, M. Shur, T. A. Fjeldly and T. Ytterdal
        "Semiconductor Device Modeling in VLSI", 
        1993, Prentice Hall, New Jersey

        Enhancements over the original model:

        - Parallel multiplier
        - Instance temperature as difference for circuit temperature
        - Added pole-zero analysis


HFET2   - Heterostructure Field Effect Transistor Level 2
        Initial Release.
        Ver:    N/A
        Class:  Z
        Level:  6
        Dir:    devices/hfet2
        Status:

        Simplified version of hfet1

        Enhancements over the original model:

        - Parallel multiplier
        - Instance temperature as difference for circuit temperature
        - Added pole-zero analysis


***************************************************************************
***************************     MES devices     ***************************
***************************************************************************

MES     - MESFET model
        Initial Release.
        Ver:    N/A
        Class:  Z
        Level:  1
        Dir:    devices/mes
        Status:

        This is the original spice3 MESFET model (Statz).

        Enhancements over the original model:

        - Parallel multiplier
        - Alan Gillespie junction diodes implementation


   Added code from macspice3f4 HFET1&2 and MESA model 
   Original note:
     Added device calls for Mesfet models and HFET models
     provided by Trond Ytterdal as of Nov 98 

MESA    - MESFET model (MacSpice3f4)
        Initial Release.
        Ver:    N/A
        Class:  Z
        Level:  2,3,4
        Dir:    devices/mesa
        Status:

        This is a multilevel model. It contains code for mesa levels
        2,3 and 4

        Enhancements over the original model:

        - Parallel multiplier
        - Instance temperature as difference from circuit temperature
        - Added pole-zero analysis


***************************************************************************
****************************    MOS devices    ****************************
***************************************************************************

MOS1    - Level 1 MOS model
        Initial Release.
        Ver:    N/A
        Class:  M
        Level:  1
        Dir:    devices/mos1
        Status:

        This is the so-called Schichman-Hodges model.

        Enhancements over the original model:

        - Parallel multiplier
        - Temperature difference from circuit temperature


MOS2    - Level 2 MOS model
        Initial Release.
        Ver:    N/A
        Class:  M
        Level:  2
        Dir:    devices/mos2
        Status:

        This is the so-called  Grove-Frohman model.

        Enhancements over the original model:

        - Parallel multiplier
        - Temperature difference from circuit temperature


MOS3    - Level 3 MOS model
        Initial Release.
        Ver:    N/A
        Class:  M
        Level:  3
        Dir:    devices/mos3
        Status:

        Enhancements over the original model:

        - Parallel multiplier
        - Temperature difference from circuit temperature


MOS6    - Level 6 MOS model
        Initial Release.
        Ver:    N/A
        Class:  M
        Level:  6
        Dir:    devices/mos6
        Status:

        Enhancements over the original model:

        - Parallel multiplier
        - Temperature difference from circuit temperature


MOS9    - Level 9 MOS model
        Initial Release.
        Ver:    N/A
        Class:  M
        Level:  9
        Dir:    devices/mos9
        Status:

        Enhancements over the original model:

        - Temperature difference from circuit temperature


BSIM1   - BSIM model level 1
        Initial Release.
        Ver:    N/A
        Class:  M
        Level:  4
        Dir:    devices/bsim1
        Status:

         Enhancements over the original model:

         - Parallel multiplier
         - Noise analysis

        BUGS:
        Distortion analysis probably does not
        work with "parallel" devices. Equations
        are too intricate to deal with. Any one
        has ideas on the subject ?


BSIM2   - BSIM model level 2
        Initial Release.
        Ver:    N/A
        Class:  M
        Level:  5
        Dir:    devices/bsim2
        Status:

        Enhancements over the original model:

        - Parallel multiplier
        - Noise analysis


BSIM3v0 - BSIM model level 3
        Initial Release.
        Ver:    3.0
        Class:  M
        Level:  52
        Dir:    devices/bsim3v0
        Status: TO BE TESTED AND IMPROVED


BSIM3v0 - BSIM model level 3
        Initial Release.
        Ver:    3.0
        Class:  M
        Level:  51
        Dir:    devices/bsim3v1a
        Status: TO BE TESTED AND IMPROVED

        This is the BSIM3v3.0 model modified by Alan Gillespie.


BSIM3v1 - BSIM model level 3
        Initial Release.
        Ver:    3.1
        Class:  M
        Level:  50
        Dir:    devices/bsim3v1
        Status: TO BE TESTED


BSIM3v1 - BSIM model level 3
        Initial Release.
        Ver:    3.1
        Class:  M
        Level:  49
        Dir:    devices/bsim3v1s
        Status: TO BE TESTED AND IMPROVED

        This is the BSIM3v3.1 model modified by Serban Popescu.
        This is level 49 model. It is an implementation that supports
        "HDIF" and "M" parameters.


BSIM3 - BSIM model level 3
        Initial Release.
        Ver:    3.2.4
        Class:  M
        Level:  8
        Dir:    devices/bsim3
        Status: TO BE TESTED

        This is the BSIM3v3.2.4 model from Berkeley device group.
        You can find some test netlists with results for this model
        on its web site.

        Web site:
        http://www-device.eecs.berkeley.edu/~bsim3

        Enhancements over the original model:

        - Parallel Multiplier
        - ACM Area Calculation Method
        - Multirevision code (supports all 3v3.2 minor revisions)
        - NodesetFix


BSIM4   - BSIM model level 4 (0.18 um)
        Initial Release.
        Ver:    4.5.0
        Class:  M
        Level:  14
        Dir:    devices/bsim4
        Status: TO BE TESTED

        This is the BSIM4 device model from Berkeley Device Group.
        Test are available on its web site.

        Web site:
        http://www-device.eecs.berkeley.edu/~bsim3/bsim4.html

        Updated to 4.5.0 YET UNTESTED.


HiSIM   - Hiroshima-university STARC IGFET Model
        Initial Release.
        Ver:    1.2.0
        Class:  M
        Level:  64
        Dir:    devices/hisim
        Status:

        This is the HiSIM model available from Hiroshima University
        (Ultra-Small Device Engineering Laboratory)

        Web site:
        http://home.hiroshima-u.ac.jp/usdl/HiSIM.shtml
        http://www.starc.or.jp/kaihatu/pdgr/hisim/index.html

        Enhancements over the original model:

        - Parallel Multiplier
        - NodesetFix


***************************************************************************
*****************************    SOI Devices   ****************************
***************************************************************************

BSIM3SOI_FD     - SOI model (fully depleted devices)
                Initial Release.
                Ver:    2.1
                Class:  M
                Level:  55
                Dir:    devices/bsim3soi_fd
                Status: TO BE TESTED.

                FD model has been integrated.
                There is a bsim3soifd directory under the test
                hierarchy. Test circuits come from the bsim3soi

                Web site at:
                http://www-device.eecs.berkeley.edu/~bsimsoi

                *) rework-14: removed #ifndef NEWCONV code.


BSIM3SOI_DD     - SOI Model (dynamic depletion model)
                Initial Release.
                Ver:    2.1
                Class:  M
                Level:  56
                Dir:    devices/bsim3soi_dd
                Status: TO BE TESTED.

                There is a bsim3soidd directory under the
                test hierarchy. Test circuits come from bsim3soi

                Web site at:
                http://www-device.eecs.berkeley.edu/~bsimsoi

                *) rework-14: removed #ifndef NEWCONV code.


BSIM3SOI_PD     - SOI model (partially depleted devices)
                Initial Release.
                Ver:    2.2.1
                Class:  M
                Level:  57
                Dir:    devices/bsim3soi_pd
                Status: TO BE TESTED.

                PD model has been integrated.
                There is a bsim3soipd directory under the test
                hierarchy. Test circuits come from the bsim3soi

                Web site at:
                http://www-device.eecs.berkeley.edu/~bsimsoi

                *) rework-14: removed #ifndef NEWCONV code.


BSIMSOI          - SOI model (partially/full depleted devices)
                Initial Release.
                Ver:    3.0
                Class:  M
                Level:  58
                Dir:    devices/bsim3soi
                Status: TO BE TESTED.

                This is the newer version from Berkeley.
                Usable for partially/full depleted devices.

                Web site at:
                http://www-device.eecs.berkeley.edu/~bsimsoi


SOI3            - STAG SOI3 Model
                Initial Release.
                Ver:    2.6
                Class:  M
                Level:  62
                Dir:    devices/soi3
                Status: TO BE TESTED

                Web site at:
                http://www.micro.ecs.soton.ac.uk/stag/


***************************************************************************
**************** Other devices not released as source code ****************
***************************************************************************

EKV     - EKV model
        Initial Release.
        Ver:    2.6
        Class:  M
        Level:  44
        Dir:    devices/ekv
        Status: TO BE TESTED

        Note: This model is not released in source code.
        You have to obtain the source code from the address below.

        Web site at:
        http://legwww.epfl.ch/ekv/