diff --git a/src/spicelib/devices/adms/hicum2/adms3va/hicum2.va b/src/spicelib/devices/adms/hicum2/adms3va/hicum2.va
index 6bb05cd2a..f2cdebf1e 100644
--- a/src/spicelib/devices/adms/hicum2/adms3va/hicum2.va
+++ b/src/spicelib/devices/adms/hicum2/adms3va/hicum2.va
@@ -1,1658 +1,1658 @@
-//HICUM Level_2 Version_2.24: A Verilog-A Description
-
-//dw 09/10: Modifications for ngspice and adms:
-// backup to ddx for capacitance calculation
-// all V(...) <+ 0.0; are replaced by I(...) < V(...)/`MIN_R;
-// using GMIN from ngspice: _circuit_gmin
-// switch of section for correlated noise (see below)
-// removed obsolete variables S_avl, f_p
-// don't like internal variable declaration
-
-//**************New Implementations*****************
-
-//******************************************************************************
-//This code contains a Verilog-A implementation of Vertical Non-Quasi-Static(NQS) 
-//Effects using adjunct gyrator networks. To turn on this effect please set FLNQS=1. 
-//Although Vertical NQS effects have been taken into account in HICUM from the very 
-//beginning (see original FTN code and built-in v2.1 HICUM model inside most of the 
-//existing circuit simulators) their implementation has been based on Weil's approach. 
-//However, using Verilog, it is presently not possible to implement Weil's approach, 
-//since there does not exist access to previous time-steps of the simulatior. 
-//The nearly available Verilog-A solution reproduces the results of previous 
-//HICUM versions (cf. documentation).
-//******************************************************************************
-
-//******************************************************************************
-// Implementation of noise correlation
-// Please turn-off (by front slash “//”) the noise correlation code section for simulation with Spectre
-//******************************************************************************
-
-// ***************Bug fix and optimization*************
-// 12/09: Elimination of 'ddx' operator for internal capacitance determination
-//        Capacitances will be calculated by Analytical Equations 
-// 10/09: Temperature coefficient (ZETAxyz) range modified to [-10:10]
-// 09/09: VPT ranges modified from [0:inf] to (0:inf]
-// 07/09: DT0H rabge modified from no range to (-inf:inf) 
-// 03/09: Simplified input NQS adjacent circuit (RC network)
-// 04/08: New range has been defined for FDQR0.
-// 11/07: Bugs have been fixed in macro HICFCI and HICQFC
-// 10/06: in @(initial_model), external if-block for HICTUN_T removed
-// 11/06: within HICQFC, minor changes made for LATB<=0.01;
-// also HICFCI and HICFCT are changed accordingly
-// to ensure correct derivatives
-// Upper limit of FGEO parameter was changed to infinity.
-// 12/06: expressions for Cdei and Cdci are corrected not to include
-// Ccdei and Cbdci respectively (used in Crbi expression).
-
-// 01/06: FCdf1_dw assigned expression (missing in v2.21)
-// FCa and FCa1 are found to have same expression: FCa is omitted in those cases
-// FCa1 written instead of FCa in the expression for FCf_ci
-// Thermal node "tnode" set as external
-// zetasct = mg+1-2.5 changed to zetasct = mg-1.5;
-// Code optimization: Temperature dependent parts are moduled in two separate blocks:
-// within @(initial_model) when self-heating is OFF
-// outside @(initial_model) when self-heating is ON
-// 03/06 : Further fix
-// vlim_t,ibcis_t,ibcxs_t,itss_t,iscs_t considered in compatibility block
-// ddt() operators are separated in contribution expressions.
-// FLCOMP parameter is given different values
-// 05/06:
-// all if-else blocks marked with begin-end
-// unused variables deleted
-// all series resistors and RTH are allowed to have a minimum value MIN_R
-// only tunelling current source contribution within if-then-else
-// 06/06: HICRBI deleted and instead the code changed (hyperbolic smoothing in
-// conductivity modulation part) and put in relevant portion of the code.
-// 07/06: ddx() operator used to find out capacitances from charges:
-// QJMODF,QJMOD,HICJQ changed accordingly
-// Lateral NQS effect modified with ddx() operator.
-// HICFCT included for downward compatibility reason.
-// Few macros are taken inside the code: HICICK, HICAVL, HICTUN (more optimized),
-// internal base resistance (Qjci included under conductivity modulation, hyperbolic smoothing used)
-// Gmin added at (bi,ei) and (bi,ci) branches.
-// 08/06: Units added in the parameter descriptions.
-
-// *********************************************************************************
-// 06/06: Comment on NODE COLLAPSING:
-// Presently this verilog code permits a minimum of 1 milli-Ohm resistance for any
-// series resistance as well as for thermal resistance RTH. If any of the resistance
-// values drops below this minimum value, the corresponding nodes are shorted with
-// zero voltage contribution. We want the model compilers/simulators deal this
-// situation in such a manner that the corresponding node is COLLAPSED.
-// We expect that the simulators should permit current contribution statement
-// for any branch with resistance value more than (or equal to) 1 milli-Ohm without
-// any convergence problem. In fact, we wish NOT to have to use a voltage contribution
-// statement in our Verilog code, except as an indication for the model compiler/simulator
-// to interprete a zero branch voltage as NODE-COLLAPSING action.
-// **********************************************************************************
-
-
-//Default simulator: Spectre
-
-`ifdef insideADMS
- `define MODEL @(initial_model)
- `define NOISE @(noise)
- `define ATTR(txt) (*txt*)
-`else
- `define MODEL
- `define NOISE
- `define ATTR(txt)
-`endif
-
-
-`define VPT_thresh      1.0e2
-`define Dexp_lim        80.0
-`define Cexp_lim        80.0
-`define DFa_fj          1.921812
-`define RTOLC           1.0e-5
-`define l_itmax         100
-`define TMAX            326.85
-`define TMIN            -100.0
-`define LN_EXP_LIMIT    11.0
-`define MIN_R           0.001
-//`define Gmin            1.0e-12
-//`define Gmin      $simparam("gmin",1e-12)  //suggested by L.L
-
-//ADS
-//`include "constants.vams"
-//`include "disciplines.vams"
-//`include "compact.vams"
-
-//Spectre
-`include "constants.h"
-`include "discipline.h"
-
-//////////////Explicit Capacitance and Charge Expression///////////////
-
-// DEPLETION CHARGE CALCULATION
-// Hyperbolic smoothing used; no punch-through
-// INPUT:
-//  c_0		: zero-bias capacitance
-//  u_d		: built-in voltage
-//  z		: exponent coefficient
-//  a_j		: control parameter for C peak value at high forward bias
-//  U_cap	: voltage across junction
-// IMPLICIT INPUT:
-//  VT		: thermal voltage
-// OUTPUT:
-//  Qz		: depletion Charge 
-//  C		: depletion capacitance
-`define QJMODF(c_0,u_d,z,a_j,U_cap,C,Qz)\
-    if(c_0 > 0.0) begin\
-        DFV_f	 = u_d*(1.0-exp(-ln(a_j)/z));\
-        DFv_e	 = (DFV_f-U_cap)/VT;\
-        DFs_q	 = sqrt(DFv_e*DFv_e+`DFa_fj);\
-        DFs_q2	 = (DFv_e+DFs_q)*0.5;\
-        DFv_j	 = DFV_f-VT*DFs_q2;\
-        DFdvj_dv = DFs_q2/DFs_q;\
-        DFb	     = ln(1.0-DFv_j/u_d);\
-        DFC_j1   = c_0*exp(-z*DFb)*DFdvj_dv;\
-        C		 = DFC_j1+a_j*c_0*(1.0-DFdvj_dv);\
-        DFQ_j	 = c_0*u_d*(1.0-exp(DFb*(1.0-z)))/(1.0-z);\
-        Qz	     = DFQ_j+a_j*c_0*(U_cap-DFv_j);\
-    end else begin\
-        C        = 0.0;\
-        Qz	     = 0.0;\
-    end
-   
-////////////////////////////////////////////////////////////////
-
-
-//////////////Explicit Capacitance and Charge Expression///////////////
-
-
-// DEPLETION CHARGE CALCULATION CONSIDERING PUNCH THROUGH
-// smoothing of reverse bias region (punch-through) 
-// and limiting to a_j=Cj,max/Cj0 for forward bias.
-// Important for base-collector and collector-substrate junction
-// INPUT:
-//  c_0		: zero-bias capacitance
-//  u_d		: built-in voltage
-//  z 		: exponent coefficient
-//  a_j		: control parameter for C peak value at high forward bias
-//  v_pt	: punch-through voltage (defined as qNw^2/2e)
-//  U_cap	: voltage across junction
-// IMPLICIT INPUT:
-//  VT		: thermal voltage
-// OUTPUT:
-//  Qz		: depletion charge
-//  C		: depletion capacitance
-`define QJMOD(c_0,u_d,z,a_j,v_pt,U_cap,C,Qz)\
-    if(c_0 > 0.0) begin\
-        Dz_r	= z/4.0;\
-        Dv_p	= v_pt-u_d;\
-        DV_f	= u_d*(1.0-exp(-ln(a_j)/z));\
-        DC_max	= a_j*c_0;\
-        DC_c	= c_0*exp((Dz_r-z)*ln(v_pt/u_d));\
-        Dv_e	= (DV_f-U_cap)/VT;\
-        if(Dv_e < `Cexp_lim) begin\
-            De	    = exp(Dv_e);\
-            De_1	= De/(1.0+De);\
-            Dv_j1	= DV_f-VT*ln(1.0+De);\
-        end else begin\
-            De_1	= 1.0;\
-            Dv_j1	= U_cap;\
-        end\
-        Da	    = 0.1*Dv_p+4.0*VT;\
-        Dv_r	= (Dv_p+Dv_j1)/Da;\
-        if(Dv_r < `Cexp_lim) begin\
-            De	    = exp(Dv_r);\
-            De_2	= De/(1.0+De);\
-            Dv_j2	= -Dv_p+Da*ln(1.0+De);\
-        end else begin\
-            De_2	= 1.0;\
-            Dv_j2	= Dv_j1;\
-        end\
-        Dv_j4	= U_cap-Dv_j1;\
-        DCln1	= ln(1.0-Dv_j1/u_d);\
-        DCln2	= ln(1.0-Dv_j2/u_d);\
-        Dz1	    = 1.0-z;\
-        Dzr1	= 1.0-Dz_r;\
-        DC_j1	= c_0*exp(DCln2*(-z))*De_1*De_2;\
-        DC_j2	= DC_c*exp(DCln1*(-Dz_r))*(1.0-De_2);\
-        DC_j3	= DC_max*(1.0-De_1);\
-        C		= DC_j1+DC_j2+DC_j3;\
-        DQ_j1	= c_0*(1.0-exp(DCln2*Dz1))/Dz1;\
-        DQ_j2	= DC_c*(1.0-exp(DCln1*Dzr1))/Dzr1;\
-        DQ_j3	= DC_c*(1.0-exp(DCln2*Dzr1))/Dzr1;\
-        Qz	    = (DQ_j1+DQ_j2-DQ_j3)*u_d+DC_max*Dv_j4;\
-    end else begin\
-        C	    = 0.0;\
-        Qz	    = 0.0;\
-    end
-
-
-// DEPLETION CHARGE & CAPACITANCE CALCULATION SELECTOR
-// Dependent on junction punch-through voltage
-// Important for collector related junctions
-`define HICJQ(c_0,u_d,z,v_pt,U_cap,C,Qz)\
-    if(v_pt < `VPT_thresh) begin\
-        `QJMOD(c_0,u_d,z,2.4,v_pt,U_cap,C,Qz)\
-    end else begin\
-        `QJMODF(c_0,u_d,z,2.4,U_cap,C,Qz)\
-    end
-
-
-// A CALCULATION NEEDED FOR COLLECTOR MINORITY CHARGE FORMULATION
-// INPUT:
-//  zb,zl       : zeta_b and zeta_l (model parameters, TED 10/96)
-//  w           : normalized injection width
-// OUTPUT:
-// hicfcio      : function of equation (2.1.17-10)
-`define HICFCI(zb,zl,w,hicfcio,dhicfcio_dw)\
-    z       = zb*w;\
-    lnzb    = ln(1+zb*w);\
-    if(z > 1.0e-6) begin\
-        x               = 1.0+z;\
-        a               = x*x;\
-        a2              = 0.250*(a*(2.0*lnzb-1.0)+1.0);\
-        a3              = (a*x*(3.0*lnzb-1.0)+1.0)/9.0;\
-        r               = zl/zb;\
-        hicfcio         = ((1.0-r)*a2+r*a3)/zb;\
-        dhicfcio_dw     = ((1.0-r)*x+r*a)*lnzb;\
-    end else begin\
-        a               = z*z;\
-        a2              = 3.0+z-0.25*a+0.10*z*a;\
-        a3              = 2.0*z+0.75*a-0.20*a*z;\
-        hicfcio         = (zb*a2+zl*a3)*w*w/6.0;\
-        dhicfcio_dw     = (1+zl*w)*(1+z)*lnzb;\
-    end
-
-
-// NEEDED TO CALCULATE WEIGHTED ICCR COLLECTOR MINORITY CHARGE
-// INPUT:
-//  z : zeta_b or zeta_l
-//  w : normalized injection width
-// OUTPUT:
-//  hicfcto     : output
-//  dhicfcto_dw : derivative of output wrt w
-`define HICFCT(z,w,hicfcto,dhicfcto_dw)\
-    a = z*w;\
-    lnz = ln(1+z*w);\
-    if (a > 1.0e-6) begin\
-        hicfcto     = (a - lnz)/z;\
-        dhicfcto_dw = a / (1.0 + a);\
-    end else begin\
-        hicfcto     = 0.5 * a * w;\
-        dhicfcto_dw = a;\
-    end
-
-
-// COLLECTOR CURRENT SPREADING CALCULATION
-// collector minority charge incl. 2D/3D current spreading (TED 10/96)
-// INPUT:
-//  Ix                          : forward transport current component (itf)
-//  I_CK                        : critical current
-//  FFT_pcS                     : dependent on fthc and thcs (parameters)
-// IMPLICIT INPUT:
-//  ahc, latl, latb             : model parameters
-//  VT                          : thermal voltage
-// OUTPUT:
-//  Q_fC, Q_CT: actual and ICCR (weighted) hole charge
-//  T_fC, T_cT: actual and ICCR (weighted) transit time
-//  Derivative dfCT_ditf not properly implemented yet
-`define HICQFC(Ix,I_CK,FFT_pcS,Q_fC,Q_CT,T_fC,T_cT)\
-    Q_fC            = FFT_pcS*Ix;\
-    FCa             = 1.0-I_CK/Ix;\
-    FCrt            = sqrt(FCa*FCa+ahc);\
-    FCa_ck          = 1.0-(FCa+FCrt)/(1.0+sqrt(1.0+ahc));\
-    FCdaick_ditf    = (FCa_ck-1.0)*(1-FCa)/(FCrt*Ix);\
-    if(latb > latl) begin\
-        FCz             = latb-latl;\
-        FCxl            = 1.0+latl;\
-        FCxb            = 1.0+latb;\
-        if(latb > 0.01) begin\
-            FCln            = ln(FCxb/FCxl);\
-            FCa1            = exp((FCa_ck-1.0)*FCln);\
-            FCd_a           = 1.0/(latl-FCa1*latb);\
-            FCw             = (FCa1-1.0)*FCd_a;\
-            FCdw_daick      = -FCz*FCa1*FCln*FCd_a*FCd_a;\
-            FCa1            = ln((1.0+latb*FCw)/(1.0+latl*FCw));\
-            FCda1_dw        = latb/(1.0+latb*FCw) - latl/(1.0+latl*FCw);\
-        end else begin\
-            FCf1            = 1.0-FCa_ck;\
-            FCd_a           = 1.0/(1.0+FCa_ck*latb);\
-            FCw             = FCf1*FCd_a;\
-            FCdw_daick      = -1.0*FCd_a*FCd_a*FCxb*FCd_a;\
-            FCa1            = FCz*FCw;\
-            FCda1_dw        = FCz;\
-        end\
-        FCf_CT          = 2.0/FCz;\
-        FCw2            = FCw*FCw;\
-        FCf1            = latb*latl*FCw*FCw2/3.0+(latb+latl)*FCw2/2.0+FCw;\
-        FCdf1_dw        = latb*latl*FCw2 + (latb+latl)*FCw + 1.0;\
-        `HICFCI(latb,latl,FCw,FCf2,FCdf2_dw)\
-        `HICFCI(latl,latb,FCw,FCf3,FCdf3_dw)\
-        FCf_ci          = FCf_CT*(FCa1*FCf1-FCf2+FCf3);\
-        FCdfc_dw        = FCf_CT*(FCa1*FCdf1_dw+FCda1_dw*FCf1-FCdf2_dw+FCdf3_dw);\
-        FCdw_ditf       = FCdw_daick*FCdaick_ditf;\
-        FCdfc_ditf      = FCdfc_dw*FCdw_ditf;\
-        if(flcomp == 0.0 || flcomp == 2.1) begin\
-            `HICFCT(latb,FCw,FCf2,FCdf2_dw)\
-            `HICFCT(latl,FCw,FCf3,FCdf3_dw)\
-            FCf_CT          = FCf_CT*(FCf2-FCf3);\
-            FCdfCT_dw       = FCf_CT*(FCdf2_dw-FCdf3_dw);\
-            FCdfCT_ditf     = FCdfCT_dw*FCdw_ditf;\
-        end else begin\
-            FCf_CT          = FCf_ci;\
-            FCdfCT_ditf     = FCdfc_ditf;\
-        end\
-    end else begin\
-        if(latb > 0.01) begin\
-            FCd_a           = 1.0/(1.0+FCa_ck*latb);\
-            FCw             = (1.0-FCa_ck)*FCd_a;\
-            FCdw_daick      = -(1.0+latb)*FCd_a*FCd_a;\
-        end else begin\
-            FCw             = 1.0-FCa_ck-FCa_ck*latb;\
-            FCdw_daick      = -(1.0+latb);\
-        end\
-        FCw2            = FCw*FCw;\
-        FCz             = latb*FCw;\
-        FCz_1           = 1.0+FCz;\
-        FCd_f           = 1.0/(FCz_1);\
-        FCf_ci          = FCw2*(1.0+FCz/3.0)*FCd_f;\
-        FCdfc_dw        = 2.0*FCw*(FCz_1+FCz*FCz/3.0)*FCd_f*FCd_f;\
-        FCdw_ditf       = FCdw_daick*FCdaick_ditf;\
-        FCdfc_ditf      = FCdfc_dw*FCdw_ditf;\
-        if(flcomp == 0.0 || flcomp == 2.1) begin\
-            if (FCz > 0.001) begin\
-                FCf_CT          = 2.0*(FCz_1*ln(FCz_1)-FCz)/(latb*latb*FCz_1);\
-                FCdfCT_dw       = 2.0*FCw*FCd_f*FCd_f;\
-            end else begin\
-                FCf_CT          = FCw2*(1.0-FCz/3.0)*FCd_f;\
-                FCdfCT_dw       = 2.0*FCw*(1.0-FCz*FCz/3.0)*FCd_f*FCd_f;\
-            end\
-            FCdfCT_ditf     = FCdfCT_dw*FCdw_ditf;\
-        end else begin\
-            FCf_CT          = FCf_ci;\
-            FCdfCT_ditf     = FCdfc_ditf;\
-        end\
-    end\
-    Q_CT    = Q_fC*FCf_CT;\
-    Q_fC    = Q_fC*FCf_ci;\
-    T_fC    = FFT_pcS*(FCf_ci+Ix*FCdfc_ditf);\
-    T_cT    = FFT_pcS*(FCf_CT+Ix*FCdfCT_ditf);
-
-// TRANSIT-TIME AND STORED MINORITY CHARGE
-// INPUT:
-//  itf         : forward transport current
-//  I_CK        : critical current
-//  T_f         : transit time    \
-//  Q_f         : minority charge / for low current
-// IMPLICIT INPUT:
-//  tef0, gtfe, fthc, thcs, ahc, latl, latb     : model parameters
-// OUTPUT:
-//  T_f         : transit time    \
-//  Q_f         : minority charge / transient analysis
-//  T_fT        : transit time    \
-//  Q_fT        : minority charge / ICCR (transfer current)
-//  Q_bf        : excess base charge
-`define HICQFF(itf,I_CK,T_f,Q_f,T_fT,Q_fT,Q_bf)\
-    if(itf < 1.0e-6*I_CK) begin\
-        Q_fT            = Q_f;\
-        T_fT            = T_f;\
-    end else begin\
-        FFa             = I_CK/itf;\
-        FFd_TfE         = tef0_t*exp(-gtfe*ln(FFa));\
-        FFd_QfE         = FFd_TfE*itf/(gtfe+1.0);\
-        FFT_fbS         = (1.0-fthc)*thcs_t;\
-        FFx             = 1.0-FFa;\
-        FFs             = sqrt(FFx*FFx+ahc);\
-        FFw             = (FFx+FFs)/(1.0+sqrt(1.0+ahc));\
-        FFw_2           = FFw*FFw;\
-        FFd_QfB         = FFT_fbS*itf*FFw_2;\
-        Q_bf            = FFd_QfB;\
-        FFa_w           = FFw_2*(1.0+2.0*FFa/FFs);\
-        FFd_TfB         = FFT_fbS*FFa_w;\
-        FFT_pcS         = fthc*thcs_t;\
-        if(latb <= 0.0 && latl <= 0.0) begin\
-            FFQ_fC        = FFT_pcS*itf*FFw_2;\
-            FFT_fC        = FFT_pcS*FFa_w;\
-            FFQ_cT        = FFQ_fC;\
-            FFT_cT        = FFT_fC;\
-        end else begin\
-            `HICQFC(itf,I_CK,FFT_pcS,FFQ_fC,FFQ_cT,FFT_fC,FFT_cT)\
-        end\
-        Q_f             = Q_f+FFd_QfB;\
-        T_f             = T_f+FFd_TfB;\
-        Q_fT            = Q_f+hfe*FFd_QfE+hfc*FFQ_cT;\
-        T_fT            = T_f+hfe*FFd_TfE+hfc*FFT_cT;\
-        Q_f             = Q_f+FFd_QfE+FFQ_fC;\
-        T_f             = T_f+FFd_TfE+FFT_fC;\
-    end
-
-
-
-
-// IDEAL DIODE (WITHOUT CAPACITANCE):
-// conductance calculation not required
-// INPUT:
-//  IS, IST     : saturation currents (model parameter related)
-//  UM1         : ideality factor
-//  U           : branch voltage
-// IMPLICIT INPUT:
-//  VT          : thermal voltage
-// OUTPUT:
-//  Iz          : diode current
-`define HICDIO(IS,IST,UM1,U,Iz)\
-    DIOY    = U/(UM1*VT);\
-    if (IS > 0.0) begin\
-        if (DIOY > `Dexp_lim) begin\
-            le      = (1 + (DIOY - `Dexp_lim));\
-            DIOY    = `Dexp_lim;\
-        end else begin\
-            le      = 1;\
-        end\
-        le      = le*limexp(DIOY);\
-        Iz      = IST*(le-1.0);\
-        if(DIOY <= -14.0) begin\
-            Iz      = -IST;\
-        end\
-    end else begin\
-        Iz      = 0.0;\
-    end
-
-
-
-// TEMPERATURE UPDATE OF JUNCTION CAPACITANCE RELATED PARAMETERS
-// INPUT:
-//  mostly model parameters
-//  x           : zero bias junction capacitance
-//  y           : junction built-in potencial
-//  z           : grading co-efficient
-//  w           : ratio of maximum to zero-bias value of capacitance or punch-through voltage
-//  is_al       : condition factor to check what "w" stands for
-//  vgeff       : band-gap voltage
-// IMPLICIT INPUT:
-//  VT          : thermal voltage
-//  vt0,qtt0,ln_qtt0,mg : other model variables
-// OUTPUT:
-//  c_j_t               : temperature update of "c_j"
-//  vd_t                : temperature update of "vd0"
-//  w_t                 : temperature update of "w"
-`define TMPHICJ(c_j,vd0,z,w,is_al,vgeff,c_j_t,vd_t,w_t)\
-    if (c_j > 0.0) begin\
-        vdj0    = 2*vt0*ln(exp(vd0*0.5/vt0)-exp(-0.5*vd0/vt0));\
-        vdjt    = vdj0*qtt0+vgeff*(1-qtt0)-mg*VT*ln_qtt0;\
-        vdt     = vdjt+2*VT*ln(0.5*(1+sqrt(1+4*exp(-vdjt/VT))));\
-        vd_t    = vdt;\
-        c_j_t   = c_j*exp(z*ln(vd0/vd_t));\
-        if (is_al == 1) begin\
-            w_t = w*vd_t/vd0;\
-        end else begin\
-            w_t = w;\
-        end\
-    end else begin\
-        c_j_t   = c_j;\
-        vd_t    = vd0;\
-        w_t     = w;\
-    end
-
-    
-    
-module hic2_full (c,b,e,s,tnode);
-
-//Node definitions
-
-inout           c,b,e,s,tnode;
-electrical      c,b,e,s,ci,ei,bp,bi,si;
-electrical	xf1,xf2;
-electrical      xf;  //RC nw
-
-electrical      tnode;
-electrical 	    n1,n2;
-
-//Branch definitions
-branch          (b,bp)          br_bbp_i;
-branch          (b,bp)          br_bbp_v;
-branch          (ci,c)          br_cic_i;
-branch          (ci,c)          br_cic_v;
-branch          (ei,e)          br_eie_i;
-branch          (ei,e)          br_eie_v;
-branch          (bp,bi)         br_bpbi_i;
-branch          (bp,bi)         br_bpbi_v;
-branch          (si,s)          br_sis_i;
-branch          (si,s)          br_sis_v;
-branch          (bi,ei)         br_biei;
-branch          (bi,ci)         br_bici;
-branch          (ci,bi)         br_cibi;
-branch          (ci,ei)         br_ciei;
-branch          (ei,ci)         br_eici;
-branch          (bp,e)          br_bpe;
-branch          (b,e)           br_be;
-branch          (bp,ei)         br_bpei;
-branch          (bp,ci)         br_bpci;
-branch          (b,ci)          br_bci;
-branch          (si,ci)         br_sici;
-branch          (bp,si)         br_bpsi;
-branch          (tnode )        br_sht;
-
-//Phase network for ITF
-branch		(xf1 )		br_bxf1;
-branch		(xf1 )		br_cxf1;
-branch		(xf2 )		br_bxf2;
-branch		(xf2 )		br_cxf2;
-
-//Phase network for QF
-
-branch    (xf )     br_bxf;  //for RC nw
-branch    (xf )     br_cxf;  //for RC nw
-
-//Noise
-
-branch 		(n1 ) 	b_n1;
-branch 		(n2 ) 	b_n2;	
-	
-
-
-// -- ###########################################################
-// -- ###########     Parameters initialization  ################
-// -- ###########################################################
-
-
-//Transfer current
-parameter real c10      = 2.0E-30       from [0:1]      `ATTR(info="GICCR constant" unit="A^2s");
-parameter real qp0      = 2.0E-14       from (0:1]      `ATTR(info="Zero-bias hole charge" unit="Coul");
-parameter real ich      = 0.0           from [0:inf)    `ATTR(info="High-current correction for 2D and 3D effects" unit="A"); //`0' signifies infinity
-parameter real hfe      = 1.0           from [0:inf]    `ATTR(info="Emitter minority charge weighting factor in HBTs");
-parameter real hfc      = 1.0           from [0:inf]    `ATTR(info="Collector minority charge weighting factor in HBTs");
-parameter real hjei     = 1.0           from [0:100]    `ATTR(info="B-E depletion charge weighting factor in HBTs");
-parameter real hjci     = 1.0           from [0:100]    `ATTR(info="B-C depletion charge weighting factor in HBTs");
-
-//Base-Emitter diode currents
-parameter real ibeis    = 1.0E-18       from [0:1]      `ATTR(info="Internal B-E saturation current" unit="A");
-parameter real mbei     = 1.0           from (0:10]     `ATTR(info="Internal B-E current ideality factor");
-parameter real ireis    = 0.0           from [0:1]      `ATTR(info="Internal B-E recombination saturation current" unit="A");
-parameter real mrei     = 2.0           from (0:10]     `ATTR(info="Internal B-E recombination current ideality factor");
-parameter real ibeps    = 0.0           from [0:1]      `ATTR(info="Peripheral B-E saturation current" unit="A");
-parameter real mbep     = 1.0           from (0:10]     `ATTR(info="Peripheral B-E current ideality factor");
-parameter real ireps    = 0.0           from [0:1]      `ATTR(info="Peripheral B-E recombination saturation current" unit="A");
-parameter real mrep     = 2.0           from (0:10]     `ATTR(info="Peripheral B-E recombination current ideality factor");
-parameter real mcf      = 1.0           from (0:10]     `ATTR(info="Non-ideality factor for III-V HBTs");
-
-//Transit time for excess recombination current at b-c barrier
-parameter real tbhrec   = 0.0           from [0:inf)    `ATTR(info="Base current recombination time constant at B-C barrier for high forward injection" unit="s");
-
-//Base-Collector diode currents
-parameter real ibcis    = 1.0E-16       from [0:1.0]    `ATTR(info="Internal B-C saturation current" unit="A");
-parameter real mbci     = 1.0           from (0:10]     `ATTR(info="Internal B-C current ideality factor");
-parameter real ibcxs    = 0.0           from [0:1.0]    `ATTR(info="External B-C saturation current" unit="A");
-parameter real mbcx     = 1.0           from (0:10]     `ATTR(info="External B-C current ideality factor");
-
-//Base-Emitter tunneling current
-parameter real ibets    = 0.0           from [0:1]      `ATTR(info="B-E tunneling saturation current" unit="A");
-parameter real abet     = 40            from [0:inf)    `ATTR(info="Exponent factor for tunneling current");
-parameter integer tunode= 1             from [0:1]      `ATTR(info="Specifies the base node connection for the tunneling current"); // =1 signifies perimeter node
-
-//Base-Collector avalanche current
-parameter real favl     = 0.0           from [0:inf)    `ATTR(info="Avalanche current factor" unit="1/V");
-parameter real qavl     = 0.0           from [0:inf)    `ATTR(info="Exponent factor for avalanche current" unit="Coul");
-parameter real alfav    = 0.0                           `ATTR(info="Relative TC for FAVL" unit="1/K");
-parameter real alqav    = 0.0                           `ATTR(info="Relative TC for QAVL" unit="1/K");
-
-//Series resistances
-parameter real rbi0     = 0.0           from [0:inf)    `ATTR(info="Zero bias internal base resistance" unit="Ohm");
-parameter real rbx      = 0.0           from [0:inf)    `ATTR(info="External base series resistance" unit="Ohm");
-parameter real fgeo     = 0.6557        from [0:inf]    `ATTR(info="Factor for geometry dependence of emitter current crowding");
-parameter real fdqr0    = 0.0           from [-0.5:100]    `ATTR(info="Correction factor for modulation by B-E and B-C space charge layer");
-parameter real fcrbi    = 0.0           from [0:1]      `ATTR(info="Ratio of HF shunt to total internal capacitance (lateral NQS effect)");
-parameter real fqi      = 1.0           from [0:1]      `ATTR(info="Ration of internal to total minority charge");
-parameter real re       = 0.0           from [0:inf)    `ATTR(info="Emitter series resistance" unit="Ohm");
-parameter real rcx      = 0.0           from [0:inf)    `ATTR(info="External collector series resistance" unit="Ohm");
-
-//Substrate transistor
-parameter real itss     = 0.0           from [0:1.0]    `ATTR(info="Substrate transistor transfer saturation current" unit="A");
-parameter real msf      = 1.0           from (0:10]     `ATTR(info="Forward ideality factor of substrate transfer current");
-parameter real iscs     = 0.0           from [0:1.0]    `ATTR(info="C-S diode saturation current" unit="A");
-parameter real msc      = 1.0           from (0:10]     `ATTR(info="Ideality factor of C-S diode current");
-parameter real tsf      = 0.0           from [0:inf)    `ATTR(info="Transit time for forward operation of substrate transistor" unit="s");
-
-//Intra-device substrate coupling
-parameter real rsu      = 0.0           from [0:inf)    `ATTR(info="Substrate series resistance" unit="Ohm");
-parameter real csu      = 0.0           from [0:inf)    `ATTR(info="Substrate shunt capacitance" unit="F");
-
-//Depletion Capacitances
-parameter real cjei0    = 1.0E-20       from [0:inf)    `ATTR(info="Internal B-E zero-bias depletion capacitance" unit="F");
-parameter real vdei     = 0.9           from (0:10]     `ATTR(info="Internal B-E built-in potential" unit="V");
-parameter real zei      = 0.5	          from (0:1]      `ATTR(info="Internal B-E grading coefficient");
-parameter real ajei     = 2.5           from [1:inf)    `ATTR(info="Ratio of maximum to zero-bias value of internal B-E capacitance");
-parameter real cjep0    = 1.0E-20       from [0:inf)    `ATTR(info="Peripheral B-E zero-bias depletion capacitance" unit="F");
-parameter real vdep     = 0.9           from (0:10]     `ATTR(info="Peripheral B-E built-in potential" unit="V");
-parameter real zep      = 0.5           from (0:1]      `ATTR(info="Peripheral B-E grading coefficient");
-parameter real ajep     = 2.5           from [1:inf)    `ATTR(info="Ratio of maximum to zero-bias value of peripheral B-E capacitance");
-parameter real cjci0    = 1.0E-20       from [0:inf)    `ATTR(info="Internal B-C zero-bias depletion capacitance" unit="F");
-parameter real vdci     = 0.7           from (0:10]     `ATTR(info="Internal B-C built-in potential" unit="V");
-parameter real zci      = 0.4           from (0:1]      `ATTR(info="Internal B-C grading coefficient");
-parameter real vptci    = 100           from (0:100]    `ATTR(info="Internal B-C punch-through voltage" unit="V");
-parameter real cjcx0    = 1.0E-20       from [0:inf)    `ATTR(info="External B-C zero-bias depletion capacitance" unit="F");
-parameter real vdcx     = 0.7           from (0:10]     `ATTR(info="External B-C built-in potential" unit="V");
-parameter real zcx      = 0.4           from (0:1]      `ATTR(info="External B-C grading coefficient");
-parameter real vptcx    = 100           from (0:100]    `ATTR(info="External B-C punch-through voltage" unit="V");
-parameter real fbcpar   = 0.0           from [0:1]      `ATTR(info="Partitioning factor of parasitic B-C cap");
-parameter real fbepar   = 1.0           from [0:1]      `ATTR(info="Partitioning factor of parasitic B-E cap");
-parameter real cjs0     = 0.0           from [0:inf)    `ATTR(info="C-S zero-bias depletion capacitance" unit="F");
-parameter real vds      = 0.6           from (0:10]     `ATTR(info="C-S built-in potential" unit="V");
-parameter real zs       = 0.5           from (0:1]      `ATTR(info="C-S grading coefficient");
-parameter real vpts     = 100           from (0:100]    `ATTR(info="C-S punch-through voltage" unit="V"); 
-
-//Diffusion Capacitances
-parameter real t0       = 0.0           from [0:inf)    `ATTR(info="Low current forward transit time at VBC=0V" unit="s");
-parameter real dt0h     = 0.0           from (-inf:inf) `ATTR(info="Time constant for base and B-C space charge layer width modulation" unit="s");
-parameter real tbvl     = 0.0           from [0:inf)    `ATTR(info="Time constant for modelling carrier jam at low VCE" unit="s");
-parameter real tef0     = 0.0           from [0:inf)    `ATTR(info="Neutral emitter storage time" unit="s");
-parameter real gtfe     = 1.0           from (0:10]     `ATTR(info="Exponent factor for current dependence of neutral emitter storage time");
-parameter real thcs     = 0.0           from [0:inf)    `ATTR(info="Saturation time constant at high current densities" unit="s");
-parameter real ahc      = 0.1           from (0:10]     `ATTR(info="Smoothing factor for current dependence of base and collector transit time");
-parameter real fthc     = 0.0           from [0:1]      `ATTR(info="Partitioning factor for base and collector portion");
-parameter real rci0     = 150           from (0:inf)    `ATTR(info="Internal collector resistance at low electric field" unit="Ohm");
-parameter real vlim     = 0.5           from (0:10]     `ATTR(info="Voltage separating ohmic and saturation velocity regime" unit="V");
-parameter real vces     = 0.1           from [0:1]      `ATTR(info="Internal C-E saturation voltage" unit="V");
-parameter real vpt      = 100.0         from (0:inf]    `ATTR(info="Collector punch-through voltage" unit="V"); // `0' signifies infinity
-parameter real tr       = 0.0           from [0:inf)    `ATTR(info="Storage time for inverse operation" unit="s");
-  
-//Isolation Capacitances
-parameter real cbepar   = 0.0           from [0:inf)    `ATTR(info="Total parasitic B-E capacitance" unit="F");
-parameter real cbcpar   = 0.0           from [0:inf)    `ATTR(info="Total parasitic B-C capacitance" unit="F");
-
-//Non-quasi-static Effect
-parameter real alqf     = 0.0           from [0:1]      `ATTR(info="Factor for additional delay time of minority charge");
-parameter real alit     = 0.0           from [0:1]      `ATTR(info="Factor for additional delay time of transfer current");
-parameter integer flnqs = 0             from [0:1]      `ATTR(info="Flag for turning on and off of vertical NQS effect");
-  
-//Noise
-parameter real kf       = 0.0           from [0:inf)    `ATTR(info="Flicker noise coefficient");
-parameter real af       = 2.0           from (0:10]     `ATTR(info="Flicker noise exponent factor");
-parameter integer cfbe  = -1            from [-2:-1]    `ATTR(info="Flag for determining where to tag the flicker noise source");
-
-
-//Lateral Geometry Scaling (at high current densities)
-parameter real latb     = 0.0           from [0:inf)    `ATTR(info="Scaling factor for collector minority charge in direction of emitter width");
-parameter real latl     = 0.0           from [0:inf)    `ATTR(info="Scaling factor for collector minority charge in direction of emitter length");
-
-//Temperature dependence
-parameter real vgb      = 1.17          from (0:10]     `ATTR(info="Bandgap voltage extrapolated to 0 K" unit="V");
-parameter real alt0     = 0.0                           `ATTR(info="First order relative TC of parameter T0" unit="1/K");
-parameter real kt0      = 0.0                           `ATTR(info="Second order relative TC of parameter T0");
-parameter real zetaci   = 0.0           from [-10:10]   `ATTR(info="Temperature exponent for RCI0");
-parameter real alvs     = 0.0                           `ATTR(info="Relative TC of saturation drift velocity" unit="1/K");
-parameter real alces    = 0.0                           `ATTR(info="Relative TC of VCES" unit="1/K");
-parameter real zetarbi  = 0.0           from [-10:10]   `ATTR(info="Temperature exponent of internal base resistance");
-parameter real zetarbx  = 0.0           from [-10:10]   `ATTR(info="Temperature exponent of external base resistance");
-parameter real zetarcx  = 0.0           from [-10:10]   `ATTR(info="Temperature exponent of external collector resistance");
-parameter real zetare   = 0.0           from [-10:10]   `ATTR(info="Temperature exponent of emitter resistance");
-parameter real zetacx   = 1.0           from [-10:10]   `ATTR(info="Temperature exponent of mobility in substrate transistor transit time");
-parameter real vge      = 1.17          from (0:10]     `ATTR(info="Effective emitter bandgap voltage" unit="V");
-parameter real vgc      = 1.17          from (0:10]     `ATTR(info="Effective collector bandgap voltage" unit="V");
-parameter real vgs      = 1.17          from (0:10]     `ATTR(info="Effective substrate bandgap voltage" unit="V");
-parameter real f1vg     =-1.02377e-4                    `ATTR(info="Coefficient K1 in T-dependent band-gap equation");
-parameter real f2vg     = 4.3215e-4                     `ATTR(info="Coefficient K2 in T-dependent band-gap equation");
-parameter real zetact   = 3.0           from [-10:10]   `ATTR(info="Exponent coefficient in transfer current temperature dependence");
-parameter real zetabet  = 3.5           from [-10:10]   `ATTR(info="Exponent coefficient in B-E junction current temperature dependence");
-parameter real alb      = 0.0                           `ATTR(info="Relative TC of forward current gain for V2.1 model" unit="1/K");
-
-//Self-Heating
-parameter integer flsh  = 0             from [0:2]      `ATTR(info="Flag for turning on and off self-heating effect");
-parameter real rth      = 0.0           from [0:inf)    `ATTR(info="Thermal resistance" unit="K/W");
-parameter real cth      = 0.0           from [0:inf)    `ATTR(info="Thermal capacitance" unit="J/W");
-
-//Compatibility with V2.1
-parameter real flcomp = 0.0             from [0:inf)    `ATTR(info="Flag for compatibility with v2.1 model (0=v2.1)");
-
-//Circuit simulator specific parameters
-parameter real tnom     = 27.0                          `ATTR(info="Temperature at which parameters are specified" unit="C");
-parameter real dt       = 0.0                           `ATTR(info="Temperature change w.r.t. chip temperature for particular transistor" unit="K");
-
-
-//
-//======================== Transistor model formulation ===================
-//
-
-    //Declaration of variables
-
-    real _circuit_gmin;
-
-    //Temperature and drift
-    real VT,Tdev,qtt0,ln_qtt0,r_VgVT,V_gT,dT,k;
-    real ireis_t,ibeis_t,ibcxs_t,ibcis_t,iscs_t,cjci0_t;
-    real cjs0_t,rci0_t,vlim_t,vces_t,thcs_t,tef0_t,rbi0_t;
-    real rbx_t,rcx_t,re_t,t0_t,vdei_t,vdci_t,vpts_t,itss_t,tsf_t;
-    real c10_t,cjei0_t,qp0_t,vdcx_t,vptcx_t,cjcx01_t,cjcx02_t;
-    real qjcx0_t_i,qjcx0_t_ii,cratio_t,c_dummy;
-    real ibeps_t,ireps_t,cjep0_t;
-    real ajei_t,qavl_t,favl_t,ibets_t,abet_t,vptci_t,vdep_t,ajep_t,zetatef;
-    real k1,k2,dvg0,vge_t,vgb_t,vgbe_t,vds_t,vt0,Tnom,Tamb,a,avs;
-    real zetabci,zetabcxt,zetasct,vgbe0,mg,vgb_t0,vge_t0,vgbe_t0,vgbc0,vgsc0;
-    real cbcpar1,cbcpar2,cbepar2,cbepar1,Oich,Ovpt,Otbhrec;
-
-    //Charges, capacitances and currents
-    real Qjci,Qjei,Qjep;
-    real it,ibei,irei,ibci,ibep,irep,ibh_rec;
-    real Qdei,Qdci,qrbi;
-    real ibet,iavl;
-    real ijbcx,ijsc,Qjs,HSUM,HSI_Tsu,Qdsu;
-
-    //Base resistance and self-heating power
-    real rbi,pterm;
-
-    //Variables for macro TMPHICJ
-    real  vdj0,vdjt,vdt;
-
-    //Model initialization
-    real k10,k20,C_1;
-
-    //Model evaluation
-    real Cjci,Cjcit,cc,Cjei,Cjep;
-    real itf,itr,Tf,Tr,VT_f,i_0f,i_0r,a_bpt,Q_0,Q_p,Q_bpt;
-    real Orci0_t,b_q,Q_fC,T_fC,T_cT,I_Tf1,T_f0,Q_fT,T_fT,Q_bf;
-    real ICKa,d1;
-    real A,a_h,Q_pT,d_Q,d_Q0;
-    real Qf,Cdei,Qr,Cdci,Crbi;
-    real ick,vc,vceff,cjcx01,cjcx02,HSa,HSb;
-    integer l_it;
-
-    //Variables for macros
-    real  DIOY,le;//HICDIO
-    real  FFT_fbS,FFa,FFx,FFs,FFw,FFw_2,FFd_QfB,FFd_TfB,FFT_pcS,FFQ_fC,FFT_fC,FFQ_cT,FFT_cT,FFd_TfE,FFd_QfE,FFa_w;//HICQFF
-    real  FCz,FCw2,FCf1,FCf2,FCf3,FCf_ci,FCz_1,FCa1,FCa_ck,FCxl,FCxb;//HICQFC
-    real  FCd_a,FCdaick_ditf,FCa,FCw,FCdw_daick,FCdfc_dw,FCdw_ditf,FCdfc_ditf,FCf_CT,FCdfCT_ditf,FCrt,FCln,lnz,FCda1_dw,FCdf1_dw,FCdf2_dw,FCdf3_dw,FCd_f,FCdfCT_dw;//HICQFC
-    real  Dz_r,Dv_p,DV_f,DC_max,DC_c,Da,Dv_e,De,De_1,Dv_j1,Dv_r,De_2,Dv_j2,Dv_j4,DQ_j1,DQ_j2,DQ_j3,DCln1,DCln2,Dz1,Dzr1,DC_j1,DC_j2,DC_j3;//QJMOD
-    real  DFV_f,DFv_e,DFv_j,DFb,DFQ_j,DFs_q,DFs_q2,DFdvj_dv,DFC_j1;//QJMODF
-    real  z,a2,a3,r,x;//HICFCI
-    real zb,zl,lnzb,w,hicfcio,dhicfcio_dw; //HICFCT
-
-    //Noise
-    real fourkt,twoq,flicker_Pwr;
-    real thermal_Rbx,thermal_Rbi,thermal_Rcx,thermal_Re,betad,betan,betadin,betadc,icn,icn1,icn2;
-
-    //NQS
-    real Ixf1,Ixf2,Qxf1,Qxf2,Vxf1,Vxf2,Itxf,TD1,Qdeix;
-    real T, Vxf, Ixf, Qxf,fact;
-
-    real pocce,czz;
-    real Qz_nom,f_QR,ETA,Qz0,fQz;
-    real v_bord,v_q,U0,av,avl;
-    real cV_f,cv_e,cs_q,cs_q2,cv_j,cdvj_dv;
-    real a_eg,ab,aa;
-
-    //end of variables
-
-analog begin
-
-`MODEL begin : Model_initialization
-
-    Tnom    = tnom+`P_CELSIUS0;
-    Tamb    = $temperature;
-    vt0     = `P_K*Tnom /`P_Q;
-    k10     = f1vg*Tnom*ln(Tnom);
-    k20     = f2vg*Tnom;
-    avs     = alvs*Tnom;
-    vgb_t0  = vgb+k10+k20;
-    vge_t0  = vge+k10+k20;
-    vgbe_t0 = (vgb_t0+vge_t0)/2;
-    vgbe0   = (vgb+vge)/2;
-    vgbc0   = (vgb+vgc)/2;
-    vgsc0   = (vgs+vgc)/2;
-    mg      = 3-`P_Q*f1vg/`P_K;
-    zetabci = mg+1-zetaci;
-    zetabcxt= mg+1-zetacx;
-    zetasct = mg-1.5;
-
-    //Depletion capacitance splitting at b-c junction
-    //Capacitances at peripheral and external base node
-    C_1    = (1.0-fbcpar)*(cjcx0+cbcpar);
-    if (C_1 >= cbcpar) begin
-        cbcpar1 = cbcpar;
-        cbcpar2 = 0.0;
-        cjcx01  = C_1-cbcpar;
-        cjcx02  = cjcx0-cjcx01;
-    end else begin
-        cbcpar1 = C_1;
-        cbcpar2 = cbcpar-cbcpar1;
-        cjcx01  = 0.0;
-        cjcx02  = cjcx0;
-    end
-
-    //Parasitic b-e capacitance partitioning: No temperature dependence
-    cbepar2 = fbepar*cbepar;
-    cbepar1 = cbepar-cbepar2;
-
-    //Avoid devide-by-zero and define infinity other way
-    //High current correction for 2D and 3D effects
-    if (ich != 0.0) begin
-        Oich    = 1.0/ich;
-    end else begin
-        Oich    = 0.0;
-    end
-
-    //Base current recombination time constant at b-c barrier
-    if (tbhrec != 0.0) begin
-        Otbhrec = 1.0/tbhrec;
-    end else begin
-        Otbhrec = 0.0;
-    end
-
-    // Temperature and resulting parameter drift
-    if (flsh==0 || rth < `MIN_R) begin : Thermal_updat_without_self_heating
-        Tdev    = Tamb+dt;
-        if(Tdev < `TMIN + 273.15) begin
-            Tdev = `TMIN + 273.15;
-        end else begin
-            if (Tdev > `TMAX + 273.15) begin
-                Tdev = `TMAX + 273.15;
-            end
-        end
-        VT      = `P_K*Tdev /`P_Q;
-        dT      = Tdev-Tnom;
-        qtt0    = Tdev/Tnom;
-        ln_qtt0 = ln(qtt0);
-        k1      = f1vg*Tdev*ln(Tdev);
-        k2      = f2vg*Tdev;
-        vgb_t   = vgb+k1+k2;
-        vge_t   = vge+k1+k2;
-        vgbe_t  = (vgb_t+vge_t)/2;
-
-        //Internal b-e junction capacitance
-        `TMPHICJ(cjei0,vdei,zei,ajei,1,vgbe0,cjei0_t,vdei_t,ajei_t)
-
-        if (flcomp == 0.0 || flcomp == 2.1) begin
-            V_gT     = 3.0*VT*ln_qtt0 + vgb*(qtt0-1.0);
-            r_VgVT   = V_gT/VT;
-            //Internal b-e diode saturation currents
-            a        = mcf*r_VgVT/mbei - alb*dT;
-            ibeis_t  = ibeis*exp(a);
-            a        = mcf*r_VgVT/mrei - alb*dT;
-            ireis_t  = ireis*exp(a);
-            a        = mcf*r_VgVT/mbep - alb*dT;
-            //Peripheral b-e diode saturation currents
-            ibeps_t  = ibeps*exp(a);
-            a        = mcf*r_VgVT/mrep - alb*dT;
-            ireps_t  = ireps*exp(a);
-            //Internal b-c diode saturation current
-            a       = r_VgVT/mbci;
-            ibcis_t = ibcis*exp(a);
-            //External b-c diode saturation currents
-            a       = r_VgVT/mbcx;
-            ibcxs_t = ibcxs*exp(a);
-            //Saturation transfer current for substrate transistor
-            a       = r_VgVT/msf;
-            itss_t  = itss*exp(a);
-            //Saturation current for c-s diode
-            a       = r_VgVT/msc;
-            iscs_t  = iscs*exp(a);
-            //Zero bias hole charge
-            a        = vdei_t/vdei;
-            qp0_t    = qp0*(1.0+0.5*zei*(1.0-a));
-            //Voltage separating ohmic and saturation velocity regime
-            a = vlim*(1.0-alvs*dT)*exp(zetaci*ln_qtt0);
-            k = (a-VT)/VT;
-            if (k < `LN_EXP_LIMIT) begin
-                vlim_t = VT + VT*ln(1.0+exp(k));
-            end else begin
-                vlim_t = a;
-            end
-            //Neutral emitter storage time
-            a        = 1.0+alb*dT;
-            k        = 0.5*(a+sqrt(a*a+0.01));
-            tef0_t   = tef0*qtt0/k;
-        end else begin
-            //Internal b-e diode saturation currents
-            ibeis_t  = ibeis*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1));
-            ireis_t  = ireis*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1));
-            //Peripheral b-e diode saturation currents
-            ibeps_t  = ibeps*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1));
-            ireps_t  = ireps*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1));
-            //Internal b-c diode saturation currents
-            ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1));
-            //External b-c diode saturation currents
-            ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1));
-            //Saturation transfer current for substrate transistor
-            itss_t  = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1));
-            //Saturation current for c-s diode
-            iscs_t  = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1));
-            //Zero bias hole charge
-            a       = exp(zei*ln(vdei_t/vdei));
-            qp0_t   = qp0*(2.0-a);
-            //Voltage separating ohmic and saturation velocity regime
-            vlim_t  = vlim*exp((zetaci-avs)*ln_qtt0);
-            //Neutral emitter storage time
-            zetatef = zetabet-zetact-0.5;
-            dvg0    = vgb-vge;
-            tef0_t  = tef0*exp(zetatef*ln_qtt0-dvg0/VT*(qtt0-1));
-        end
-
-        //GICCR prefactor
-        c10_t   = c10*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1));
-
-        // Low-field internal collector resistance
-        rci0_t  = rci0*exp(zetaci*ln_qtt0);
-
-        //Voltage separating ohmic and saturation velocity regime
-        //vlim_t  = vlim*exp((zetaci-avs)*ln_qtt0);
-
-        //Internal c-e saturation voltage
-        vces_t  = vces*(1+alces*dT);
-
-
-        //Internal b-c diode saturation current
-        //ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1));
-
-        //Internal b-c junction capacitance
-        `TMPHICJ(cjci0,vdci,zci,vptci,0,vgbc0,cjci0_t,vdci_t,vptci_t)
-
-        //Low-current forward transit time
-        t0_t    = t0*(1+alt0*dT+kt0*dT*dT);
-
-        //Saturation time constant at high current densities
-        thcs_t  = thcs*exp((zetaci-1)*ln_qtt0);
-
-
-        //Avalanche caurrent factors
-        favl_t  = favl*exp(alfav*dT);
-        qavl_t  = qavl*exp(alqav*dT);
-
-        //Zero bias internal base resistance
-        rbi0_t  = rbi0*exp(zetarbi*ln_qtt0);
-
-
-        //Peripheral b-e junction capacitance
-        `TMPHICJ(cjep0,vdep,zep,ajep,1,vgbe0,cjep0_t,vdep_t,ajep_t)
-
-        //Tunneling current factors
-        begin : HICTUN_T
-//            real a_eg,ab,aa;
-            ab      = 1.0;
-            aa      = 1.0;
-            a_eg=vgbe_t0/vgbe_t;
-            if(tunode==1 && cjep0 > 0.0 && vdep >0.0) begin
-                ab      = (cjep0_t/cjep0)*sqrt(a_eg)*vdep_t*vdep_t/(vdep*vdep);
-                aa      = (vdep/vdep_t)*(cjep0/cjep0_t)*pow(a_eg,-1.5);
-            end else if (tunode==0 && cjei0 > 0.0 && vdei >0.0) begin
-                ab      = (cjei0_t/cjei0)*sqrt(a_eg)*vdei_t*vdei_t/(vdei*vdei);
-                aa      = (vdei/vdei_t)*(cjei0/cjei0_t)*pow(a_eg,-1.5);
-            end
-            ibets_t = ibets*ab;
-            abet_t  = abet*aa;
-        end
-
-
-        //Temperature mapping for tunneling current is done inside HICTUN
-
-        `TMPHICJ(1.0,vdcx,zcx,vptcx,0,vgbc0,cratio_t,vdcx_t,vptcx_t)
-        cjcx01_t=cratio_t*cjcx01;
-        cjcx02_t=cratio_t*cjcx02;
-
-
-        //External b-c diode saturation currents
-        //ibcxs_t       = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1));
-
-
-        //Constant external series resistances
-        rcx_t   = rcx*exp(zetarcx*ln_qtt0);
-        rbx_t   = rbx*exp(zetarbx*ln_qtt0);
-        re_t    = re*exp(zetare*ln_qtt0);
-
-        //Forward transit time in substrate transistor
-        tsf_t   = tsf*exp((zetacx-1.0)*ln_qtt0);
-
-        //Capacitance for c-s junction
-        `TMPHICJ(cjs0,vds,zs,vpts,0,vgsc0,cjs0_t,vds_t,vpts_t)
-
-    end // of Thermal_update_without_self_heating
-
-end     //of Model_initialization
-
-if (flsh!=0 && rth >= `MIN_R) begin : Thermal_update_with_self_heating
-    Tdev    = Tamb+dt+V(br_sht);
-    // Limit temperature to avoid FPEs in equations
-    if(Tdev < `TMIN + 273.15) begin
-        Tdev = `TMIN + 273.15;
-    end else begin
-        if (Tdev > `TMAX + 273.15) begin
-            Tdev = `TMAX + 273.15;
-        end
-    end
-    VT      = `P_K*Tdev /`P_Q;
-    dT      = Tdev-Tnom;
-    qtt0    = Tdev/Tnom;
-    ln_qtt0 = ln(qtt0);
-    k1      = f1vg*Tdev*ln(Tdev);
-    k2      = f2vg*Tdev;
-    vgb_t   = vgb+k1+k2;
-    vge_t   = vge+k1+k2;
-    vgbe_t  = (vgb_t+vge_t)/2;
-
-    //Internal b-e junction capacitance
-    `TMPHICJ(cjei0,vdei,zei,ajei,1,vgbe0,cjei0_t,vdei_t,ajei_t)
-
-    if (flcomp == 0.0 || flcomp == 2.1) begin
-        V_gT     = 3.0*VT*ln_qtt0 + vgb*(qtt0-1.0);
-        r_VgVT   = V_gT/VT;
-        //Internal b-e diode saturation currents
-        a        = mcf*r_VgVT/mbei - alb*dT;
-        ibeis_t  = ibeis*exp(a);
-        a        = mcf*r_VgVT/mrei - alb*dT;
-        ireis_t  = ireis*exp(a);
-        a        = mcf*r_VgVT/mbep - alb*dT;
-        //Peripheral b-e diode saturation currents
-        ibeps_t  = ibeps*exp(a);
-        a        = mcf*r_VgVT/mrep - alb*dT;
-        ireps_t  = ireps*exp(a);
-        //Internal b-c diode saturation current
-        a       = r_VgVT/mbci;
-        ibcis_t = ibcis*exp(a);
-        //External b-c diode saturation currents
-        a       = r_VgVT/mbcx;
-        ibcxs_t = ibcxs*exp(a);
-        //Saturation transfer current for substrate transistor
-        a       = r_VgVT/msf;
-        itss_t  = itss*exp(a);
-        //Saturation current for c-s diode
-        a       = r_VgVT/msc;
-        iscs_t  = iscs*exp(a);
-        //Zero bias hole charge
-        a        = vdei_t/vdei;
-        qp0_t    = qp0*(1.0+0.5*zei*(1.0-a));
-        //Voltage separating ohmic and saturation velocity regime
-        a = vlim*(1.0-alvs*dT)*exp(zetaci*ln_qtt0);
-        k = (a-VT)/VT;
-        if (k < `LN_EXP_LIMIT) begin
-            vlim_t = VT + VT*ln(1.0+exp(k));
-        end else begin
-            vlim_t = a;
-        end
-        //Neutral emitter storage time
-        a        = 1.0+alb*dT;
-        k        = 0.5*(a+sqrt(a*a+0.01));
-        tef0_t   = tef0*qtt0/k;
-    end else begin
-        //Internal b-e diode saturation currents
-        ibeis_t  = ibeis*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1));
-        ireis_t  = ireis*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1));
-        //Peripheral b-e diode saturation currents
-        ibeps_t  = ibeps*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1));
-        ireps_t  = ireps*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1));
-        //Internal b-c diode saturation currents
-        ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1));
-        //External b-c diode saturation currents
-        ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1));
-        //Saturation transfer current for substrate transistor
-        itss_t  = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1));
-        //Saturation current for c-s diode
-        iscs_t  = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1));
-        //Zero bias hole charge
-        a       = exp(zei*ln(vdei_t/vdei));
-        qp0_t   = qp0*(2.0-a);
-        //Voltage separating ohmic and saturation velocity regime
-        vlim_t  = vlim*exp((zetaci-avs)*ln_qtt0);
-        //Neutral emitter storage time
-        zetatef = zetabet-zetact-0.5;
-        dvg0    = vgb-vge;
-        tef0_t  = tef0*exp(zetatef*ln_qtt0-dvg0/VT*(qtt0-1));
-    end
-
-    //GICCR prefactor
-    c10_t   = c10*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1));
-
-    // Low-field internal collector resistance
-    rci0_t  = rci0*exp(zetaci*ln_qtt0);
-
-    //Voltage separating ohmic and saturation velocity regime
-    //vlim_t  = vlim*exp((zetaci-avs)*ln_qtt0);
-
-    //Internal c-e saturation voltage
-    vces_t  = vces*(1+alces*dT);
-
-
-    //Internal b-c diode saturation current
-    //ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1));
-
-    //Internal b-c junction capacitance
-    `TMPHICJ(cjci0,vdci,zci,vptci,0,vgbc0,cjci0_t,vdci_t,vptci_t)
-
-    //Low-current forward transit time
-    t0_t    = t0*(1+alt0*dT+kt0*dT*dT);
-
-    //Saturation time constant at high current densities
-    thcs_t  = thcs*exp((zetaci-1)*ln_qtt0);
-
-
-    //Avalanche caurrent factors
-    favl_t  = favl*exp(alfav*dT);
-    qavl_t  = qavl*exp(alqav*dT);
-
-    //Zero bias internal base resistance
-    rbi0_t  = rbi0*exp(zetarbi*ln_qtt0);
-
-
-    //Peripheral b-e junction capacitance
-    `TMPHICJ(cjep0,vdep,zep,ajep,1,vgbe0,cjep0_t,vdep_t,ajep_t)
-
-    //Tunneling current factors
-    if (V(br_bpei) < 0.0 || V(br_biei) < 0.0) begin : HICTUN_T
-//        real a_eg,ab,aa;
-        ab      = 1.0;
-        aa      = 1.0;
-        a_eg=vgbe_t0/vgbe_t;
-        if(tunode==1 && cjep0 > 0.0 && vdep >0.0) begin
-            ab      = (cjep0_t/cjep0)*sqrt(a_eg)*vdep_t*vdep_t/(vdep*vdep);
-            aa      = (vdep/vdep_t)*(cjep0/cjep0_t)*pow(a_eg,-1.5);
-        end else if (tunode==0 && cjei0 > 0.0 && vdei >0.0) begin
-            ab      = (cjei0_t/cjei0)*sqrt(a_eg)*vdei_t*vdei_t/(vdei*vdei);
-            aa      = (vdei/vdei_t)*(cjei0/cjei0_t)*pow(a_eg,-1.5);
-        end
-        ibets_t = ibets*ab;
-        abet_t  = abet*aa;
-    end
-
-
-    //Temperature mapping for tunneling current is done inside HICTUN
-
-    `TMPHICJ(1.0,vdcx,zcx,vptcx,0,vgbc0,cratio_t,vdcx_t,vptcx_t)
-    cjcx01_t=cratio_t*cjcx01;
-    cjcx02_t=cratio_t*cjcx02;
-
-
-    //External b-c diode saturation currents
-    //ibcxs_t       = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1));
-
-
-    //Constant external series resistances
-    rcx_t   = rcx*exp(zetarcx*ln_qtt0);
-    rbx_t   = rbx*exp(zetarbx*ln_qtt0);
-    re_t    = re*exp(zetare*ln_qtt0);
-
-    //Forward transit time in substrate transistor
-    tsf_t   = tsf*exp((zetacx-1.0)*ln_qtt0);
-
-    //Capacitance for c-s junction
-    `TMPHICJ(cjs0,vds,zs,vpts,0,vgsc0,cjs0_t,vds_t,vpts_t)
-
-end     //of Thermal_update_with_self_heating
-
-
-begin : Model_evaluation
-
-    //Intrinsic transistor
-    //Internal base currents across b-e junction
-    `HICDIO(ibeis,ibeis_t,mbei,V(br_biei),ibei)
-    `HICDIO(ireis,ireis_t,mrei,V(br_biei),irei)
-
-    //HICCR: begin
-
-    //Inverse of low-field internal collector resistance: needed in HICICK
-    Orci0_t = 1.0/rci0_t;
-
-    //Initialization
-    //Transfer current, minority charges and transit times
-
-    Tr      = tr;
-    VT_f    = mcf*VT;
-    i_0f    = c10_t * limexp(V(br_biei)/VT_f);
-    i_0r    = c10_t * limexp(V(br_bici)/VT);
-
-    //Internal b-e and b-c junction capacitances and charges
-    //`QJMODF(cjei0_t,vdei_t,zei,ajei_t,V(br_biei),Qjei)
-    //Cjei    = ddx(Qjei,V(bi));
-    `QJMODF(cjei0_t,vdei_t,zei,ajei_t,V(br_biei),Cjei,Qjei)
-
-    //`HICJQ(cjci0_t,vdci_t,zci,vptci_t,V(br_bici),Qjci)
-    //Cjci    = ddx(Qjci,V(bi));
-    `HICJQ(cjci0_t,vdci_t,zci,vptci_t,V(br_bici),Cjci,Qjci)
-
-    //Hole charge at low bias
-    a_bpt   = 0.05;
-    Q_0     = qp0_t + hjei*Qjei + hjci*Qjci;
-    Q_bpt   = a_bpt*qp0_t;
-    b_q     = Q_0/Q_bpt-1;
-    Q_0     = Q_bpt*(1+(b_q +sqrt(b_q*b_q+1.921812))/2);
-
-    //Transit time calculation at low current density
-    if(cjci0_t > 0.0) begin : CJMODF
-//        real cV_f,cv_e,cs_q,cs_q2,cv_j,cdvj_dv;
-        cV_f    = vdci_t*(1.0-exp(-ln(2.4)/zci));
-        cv_e    = (cV_f-V(br_bici))/VT;
-        cs_q    = sqrt(cv_e*cv_e+1.921812);
-        cs_q2   = (cv_e+cs_q)*0.5;
-        cv_j    = cV_f-VT*cs_q2;
-        cdvj_dv = cs_q2/cs_q;
-        Cjcit   = cjci0_t*exp(-zci*ln(1.0-cv_j/vdci_t))*cdvj_dv+2.4*cjci0_t*(1.0-cdvj_dv);
-    end else begin
-        Cjcit   = 0.0;
-    end
-    if(Cjcit > 0.0) begin
-        cc      = cjci0_t/Cjcit;
-    end else begin
-        cc      = 1.0;
-    end
-    T_f0    = t0_t+dt0h*(cc-1.0)+tbvl*(1/cc-1.0);
-
-    //Effective collector voltage
-    vc      = V(br_ciei)-vces_t;
-
-    //Critical current for onset of high-current effects
-    begin : HICICK
-        Ovpt    = 1.0/vpt;
-        a       = vc/VT;
-        d1      = a-1;
-        vceff   = (1.0+((d1+sqrt(d1*d1+1.921812))/2))*VT;
-        a       = vceff/vlim_t;
-        ick     = vceff*Orci0_t/sqrt(1.0+a*a);
-        ICKa    = (vceff-vlim_t)*Ovpt;
-        ick     = ick*(1.0+0.5*(ICKa+sqrt(ICKa*ICKa+1.0e-3)));
-    end
-
-    //Initial formulation of forward and reverse component of transfer current
-    Q_p     = Q_0;
-    if (T_f0 > 0.0 || Tr > 0.0) begin
-        A       = 0.5*Q_0;
-        Q_p     = A+sqrt(A*A+T_f0*i_0f+Tr*i_0r);
-    end
-    I_Tf1   =i_0f/Q_p;
-    a_h     = Oich*I_Tf1;
-    itf     = I_Tf1*(1.0+a_h);
-    itr     = i_0r/Q_p;
-
-    //Initial formulation of forward transit time, diffusion, GICCR and excess b-c charge
-    Q_bf    = 0.0;
-    Tf      = T_f0;
-    Qf      = T_f0*itf;
-    `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf)
-
-    //Initial formulation of reverse diffusion charge
-    Qr      = Tr*itr;
-
-    //Preparation for iteration to get total hole charge and related variables
-    l_it    = 0;
-    if(Qf > `RTOLC*Q_p || a_h > `RTOLC) begin
-        //Iteration for Q_pT is required for improved initial solution
-        Qf      = sqrt(T_f0*itf*Q_fT);
-        Q_pT    = Q_0+Qf+Qr;
-        d_Q     = Q_pT;
-        while (abs(d_Q) >= `RTOLC*abs(Q_pT) && l_it <= `l_itmax) begin
-            d_Q0    = d_Q;
-            I_Tf1   = i_0f/Q_pT;
-            a_h     = Oich*I_Tf1;
-            itf     = I_Tf1*(1.0+a_h);
-            itr     = i_0r/Q_pT;
-            Tf      = T_f0;
-            Qf      = T_f0*itf;
-            `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf)
-            Qr      = Tr*itr;
-            if(Oich == 0.0) begin
-                a       = 1.0+(T_fT*itf+Qr)/Q_pT;
-            end else begin
-                a       = 1.0+(T_fT*I_Tf1*(1.0+2.0*a_h)+Qr)/Q_pT;
-            end
-            d_Q     = -(Q_pT-(Q_0+Q_fT+Qr))/a;
-            //Limit maximum change of Q_pT
-            a       = abs(0.3*Q_pT);
-            if(abs(d_Q) > a) begin
-                if (d_Q>=0) begin
-                    d_Q     = a;
-                end else begin
-                    d_Q     = -a;
-                end
-            end
-            Q_pT    = Q_pT+d_Q;
-            l_it    = l_it+1;
-        end //while
-
-        I_Tf1   = i_0f/Q_pT;
-        a_h     = Oich*I_Tf1;
-        itf     = I_Tf1*(1.0+a_h);
-        itr     = i_0r/Q_pT;
-
-        //Final transit times, charges and transport current components
-        Tf      = T_f0;
-        Qf      = T_f0*itf;
-        `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf)
-        Qr      = Tr*itr;
-
-    end //if
-
-    //NQS effect implemented with LCR networks
-    //Once the delay in ITF is considered, IT_NQS is calculated afterwards
-
-    it      = itf-itr;
-
-    //Diffusion charges for further use
-    Qdei    = Qf;
-    Qdci    = Qr;
-
-
-    //High-frequency emitter current crowding (lateral NQS)
-    Cdei    = -1*ddx(Qdei,V(ei));
-    Cdci    = -1*ddx(Qdci,V(ci));
-    Crbi    = fcrbi*(Cjei+Cjci+Cdei+Cdci);
-    qrbi    = Crbi*V(br_bpbi_v);
-
-//    qrbi	= fcrbi*(Qjei+Qjci+Qdei+Qdci);
-
-    //HICCR: end
-
-    //Internal base current across b-c junction
-    `HICDIO(ibcis,ibcis_t,mbci,V(br_bici),ibci)
-
-    //Avalanche current
-    if((V(br_bici) < 0.0) && (favl_t > 0.0) && (cjci0_t > 0.0)) begin : HICAVL
-//        real v_bord,v_q,U0,av,avl;
-        v_bord  = vdci_t-V(br_bici);
-        v_q     = qavl_t/Cjci;
-        U0      = qavl_t/cjci0_t;
-        if(v_bord > U0) begin
-                av      = favl_t*exp(-v_q/U0);
-                avl     = av*(U0+(1.0+v_q/U0)*(v_bord-U0));
-        end else begin
-            avl     = favl_t*v_bord*exp(-v_q/v_bord);
-        end
-        iavl    = itf*avl;
-    end else begin
-        iavl    = 0.0;
-    end
-
-    //Excess base current from recombination at the b-c barrier
-    ibh_rec = Q_bf*Otbhrec;
-
-    //Internal base resistance
-    if(rbi0_t > 0.0) begin : HICRBI
-//        real Qz_nom,f_QR,ETA,Qz0,fQz;
-        // Consideration of conductivity modulation
-        // To avoid convergence problem hyperbolic smoothing used
-        f_QR    = (1+fdqr0)*qp0_t;
-        Qz0     = Qjei+Qjci+Qf;
-        Qz_nom  = 1+Qz0/f_QR;
-        fQz     = 0.5*(Qz_nom+sqrt(Qz_nom*Qz_nom+0.01));
-        rbi     = rbi0_t/fQz;
-        // Consideration of emitter current crowding
-        if( ibei > 0.0) begin
-            ETA     = rbi*ibei*fgeo/VT;
-            if(ETA < 1.0e-6) begin
-                rbi     = rbi*(1.0-0.5*ETA);
-            end else begin
-                rbi     = rbi*ln(1.0+ETA)/ETA;
-            end
-        end
-        // Consideration of peripheral charge
-        if(Qf > 0.0) begin
-            rbi     = rbi*(Qjei+Qf*fqi)/(Qjei+Qf);
-        end
-    end else begin
-        rbi     = 0.0;
-    end
-
-    //Base currents across peripheral b-e junction
-    `HICDIO(ibeps,ibeps_t,mbep,V(br_bpei),ibep)
-    `HICDIO(ireps,ireps_t,mrep,V(br_bpei),irep)
-
-    //Peripheral b-e junction capacitance and charge
-    `QJMODF(cjep0_t,vdep_t,zep,ajep_t,V(br_bpei),Cjep,Qjep)
-
-    //Tunelling current
-    if (V(br_bpei) <0.0 || V(br_biei) < 0.0) begin : HICTUN
-//        real pocce,czz;
-        if(tunode==1 && cjep0_t > 0.0 && vdep_t >0.0) begin
-            pocce   = exp((1-1/zep)*ln(Cjep/cjep0_t));
-            czz     = -(V(br_bpei)/vdep_t)*ibets_t*pocce;
-            ibet    = czz*exp(-abet_t/pocce);
-            end else if (tunode==0 && cjei0_t > 0.0 && vdei_t >0.0) begin
-                pocce   = exp((1-1/zei)*ln(Cjei/cjei0_t));
-                czz     = -(V(br_biei)/vdei_t)*ibets_t*pocce;
-                ibet    = czz*exp(-abet_t/pocce);
-            end else begin
-            ibet    = 0.0;
-        end
-    end else begin
-        ibet    = 0.0;
-    end
-
-
-    //Depletion capacitance and charge at peripheral b-c junction (bp,ci)
-    `HICJQ(cjcx02_t,vdcx_t,zcx,vptcx_t,V(br_bpci),c_dummy,qjcx0_t_ii)
-
-    //Base currents across peripheral b-c junction (bp,ci)
-    `HICDIO(ibcxs,ibcxs_t,mbcx,V(br_bpci),ijbcx)
-
-    //Depletion capacitance and charge at external b-c junction (b,ci)
-    `HICJQ(cjcx01_t,vdcx_t,zcx,vptcx_t,V(br_bci),c_dummy,qjcx0_t_i)
-
-    //Depletion substrate capacitance and charge at s-c junction (si,ci)
-    `HICJQ(cjs0_t,vds_t,zs,vpts_t,V(br_sici),c_dummy,Qjs)
-
-    //Parasitic substrate transistor transfer current and diffusion charge
-    if(itss > 0.0) begin : Sub_Transfer
-        HSUM    = msf*VT;
-        HSa     = limexp(V(br_bpci)/HSUM);
-        HSb     = limexp(V(br_sici)/HSUM);
-        HSI_Tsu = itss_t*(HSa-HSb);
-        if(tsf > 0.0) begin
-            Qdsu    = tsf_t*itss_t*HSa;
-        end else begin
-            Qdsu    = 0.0;
-        end
-    end else begin
-        HSI_Tsu = 0.0;
-        Qdsu    = 0.0;
-    end
-
-    // Current gain computation for correlated noise implementation
-    betad=ibei;
-    if (betad > 0.0) begin
-        betadin=betad;
-        betan=it;
-        betadc=betan/betad;
-    end else begin
-        betadc=0.0;
-    end
-
-    //Diode current for s-c junction (si,ci)
-    `HICDIO(iscs,iscs_t,msc,V(br_sici),ijsc)
-
-    //Self-heating calculation
-    if (flsh == 1 && rth >= `MIN_R) begin
-        pterm   =  V(br_ciei)*it + (vdci_t-V(br_bici))*iavl;
-    end else if (flsh == 2 && rth >= `MIN_R) begin
-        pterm   =  V(br_ciei)*it + (vdci_t-V(br_bici))*iavl + ibei*V(br_biei) + ibci*V(br_bici) + ibep*V(br_bpei) + ijbcx*V(br_bpci) + ijsc*V(br_sici);
-        if (rbi >= `MIN_R) begin
-            pterm   = pterm + V(br_bpbi_i)*V(br_bpbi_i)/rbi;
-        end
-        if (re_t >= `MIN_R) begin
-            pterm   = pterm + V(br_eie_i)*V(br_eie_i)/re_t;
-        end
-        if (rcx_t >= `MIN_R) begin
-            pterm   = pterm + V(br_cic_i)*V(br_cic_i)/rcx_t;
-        end
-        if (rbx_t >= `MIN_R) begin
-            pterm   = pterm + V(br_bbp_i)*V(br_bbp_i)/rbx_t;
-        end
-    end
-
-    Itxf	= itf;
-    Qdeix	= Qdei;
-    // Excess Phase calculation
-
-    if (flnqs != 0 && Tf != 0) begin
-        Vxf1	= V(br_bxf1);
-        Vxf2	= V(br_bxf2);
-
-        Ixf1	=  (Vxf2-itf)/Tf*t0;
-        Ixf2	=  (Vxf2-Vxf1)/Tf*t0;
-        Qxf1	=  alit*Vxf1*t0;
-        Qxf2	=  alit*Vxf2/3*t0;
-        Itxf	=  Vxf2;
-
-        Vxf	= V(br_bxf);               //for RC nw
-        fact  = t0/Tf;                 //for RC nw  
-        Ixf   = (Vxf - Qdei)*fact;     //for RC nw
-        Qxf   = alqf*Vxf*t0;           //for RC nw
-        Qdeix = Vxf;                   //for RC nw
-    end else begin
-        Ixf1	=  V(br_bxf1);
-        Ixf2	=  V(br_bxf2);
-        Qxf1	=  0;
-        Qxf2	=  0;
-
-        Ixf   = V(br_bxf);     
-        Qxf   = 0;
-    end
-
-end     //of Model_evaluation
-
-begin : Load_sources
-
-    I(br_biei)      <+ _circuit_gmin*V(br_biei);
-    I(br_bici)      <+ _circuit_gmin*V(br_bici);
-
-    I(br_bci)       <+ ddt(qjcx0_t_i);
-    I(br_bci)       <+ ddt(cbcpar1*V(br_bci));
-    I(br_bpci)      <+ ddt(cbcpar2*V(br_bpci));
-    if (rbx >= `MIN_R) begin
-        I(br_bbp_i)     <+ V(br_bbp_i)/rbx_t;
-    end else begin
-//        V(br_bbp_v)     <+ 0.0;
-        I(br_bbp_i)     <+ V(br_bbp_i)/`MIN_R;
-    end
-    if(rbi0 >= `MIN_R) begin
-        I(br_bpbi_i)    <+ V(br_bpbi_i)/rbi;
-        I(br_bpbi_i)    <+ ddt(qrbi);
-    end else begin
-//        V(br_bpbi_v)    <+ 0.0;
-        I(br_bpbi_i)    <+ V(br_bpbi_i)/`MIN_R;
-    end
-    if (tunode==1.0) begin
-        I(br_bpei)      <+ -ibet;
-    end else begin
-        I(br_biei)      <+ -ibet;
-    end
-    I(br_bpei)      <+ ibep;
-    I(br_bpei)      <+ irep;
-    I(br_bpei)      <+ ddt(Qjep);
-    I(br_biei)      <+ ibei;
-    I(br_biei)      <+ irei;
-    I(br_biei)      <+ ibh_rec;
-    I(br_biei)      <+ ddt(Qdeix+Qjei);
-    I(br_bpsi)      <+ HSI_Tsu;
-    I(br_bpci)      <+ ijbcx;
-    I(br_bpci)      <+ ddt(qjcx0_t_ii+Qdsu);
-    I(br_be)        <+ ddt(cbepar1*V(br_be));
-    I(br_bpe)       <+ ddt(cbepar2*V(br_bpe));
-    I(br_bici)      <+ ibci-iavl;
-    I(br_bici)      <+ ddt(Qdci+Qjci);
-    I(br_sici)      <+ ijsc;
-    I(br_sici)      <+ ddt(Qjs);
-    I(br_ciei)      <+ Itxf;
-    I(br_eici)      <+ itr;
-    if (rcx >= `MIN_R) begin
-        I(br_cic_i)     <+ V(br_cic_i)/rcx_t;
-    end else begin
-//        V(br_cic_v)     <+ 0.0;
-        I(br_cic_i)     <+ V(br_cic_i)/`MIN_R;
-    end
-    if (re >= `MIN_R) begin
-        I(br_eie_i)     <+ V(br_eie_i)/re_t;
-    end else begin
-//        V(br_eie_v)     <+ 0.0;
-        I(br_eie_i)     <+ V(br_eie_i)/`MIN_R;
-    end
-    if(rsu >= `MIN_R) begin
-        I(br_sis_i)     <+ V(br_sis_i)/rsu;
-        I(br_sis_i)     <+ ddt(csu*V(br_sis_i));
-    end else begin
-//        V(br_sis_v)     <+ 0.0;
-        I(br_sis_i)     <+ V(br_sis_i)/`MIN_R;
-    end
-
-    // Following code is an intermediate solution (if branch contribution is not supported):
-    // ******************************************
-    if(flsh == 0 || rth < `MIN_R) begin
-          I(br_sht)       <+ V(br_sht)/`MIN_R;
-    end else begin
-          I(br_sht)       <+ V(br_sht)/rth-pterm;
-          I(br_sht)       <+ ddt(cth*V(br_sht));
-    end
-
-    // ******************************************
-
-    // For simulators having no problem with V(br_sht) <+ 0.0
-    // with external thermal node, follwing code may be used.
-    // Note that external thermal node should remain accessible
-    // even without self-heating.
-    // ********************************************
-    //if(flsh == 0 || rth < `MIN_R) begin
-    //    V(br_sht)       <+ 0.0;
-    //end else begin
-    //    I(br_sht)       <+ V(br_sht)/rth-pterm;
-    //    I(br_sht)       <+ ddt(cth*V(br_sht));
-    //end
-    // ********************************************
-
-    // NQS effect
-    I(br_bxf1) <+ Ixf1;
-    I(br_cxf1) <+ ddt(Qxf1);
-    I(br_bxf2) <+ Ixf2;
-    I(br_cxf2) <+ ddt(Qxf2);
-
-    I(br_bxf) <+  Ixf;         //for RC nw
-    I(br_cxf) <+  ddt(Qxf);    //for RC nw
-
-end //of Load_sources
-
-
-`NOISE begin : Noise_sources
-
-    //Thermal noise
-    fourkt  = 4.0 * `P_K * Tdev;
-    if(rbx >= `MIN_R) begin
-        I(br_bbp_i)     <+ white_noise(fourkt/rbx_t,    "thermal");
-    end
-    if(rbi0 >= `MIN_R) begin
-        I(br_bpbi_i)    <+ white_noise(fourkt/rbi,      "thermal");
-    end
-    if(rcx >= `MIN_R) begin
-        I(br_cic_i)     <+ white_noise(fourkt/rcx_t,    "thermal");
-    end
-    if(re >= `MIN_R) begin
-        I(br_eie_i)     <+ white_noise(fourkt/re_t,     "thermal");
-    end
-    if(rsu >= `MIN_R) begin
-        I(br_sis_i)     <+ white_noise(fourkt/rsu,      "thermal");
-    end
-
-    //Flicker noise : Fully correlated between the perimeter and internal base-node
-    flicker_Pwr     = kf*pow((ibei+ibep),af);
-    if (cfbe == -1) begin
-        I(br_biei)      <+ flicker_noise(flicker_Pwr,1.0);
-    end else begin
-        I(br_bpei)      <+ flicker_noise(flicker_Pwr,1.0);
-    end
-
-    //Shot noise
-
-    twoq    = 2.0 * `P_Q;
-    //     I(br_ciei)      <+ white_noise(twoq*it,         "shot");
-    I(br_cibi)      <+ white_noise(twoq*iavl,       "shot");
-
-    //     I(br_biei)      <+ white_noise(twoq*ibei,       "shot");
-
-    I(br_bici)      <+ white_noise(twoq*abs(ibci),  "shot");
-
-    I(br_bpei)      <+ white_noise(twoq*ibep,       "shot");
-
-    I(br_bpci)      <+ white_noise(twoq*abs(ijbcx), "shot");
-
-    I(br_sici)      <+ white_noise(twoq*abs(ijsc),  "shot");
-
-    // Code section for correlated noise
-    // Please turn-off this code section by "//" in order to run the code with Spectre
-
-//    I(b_n1)		<+ white_noise(2 * `P_Q * ibei,		"shot");
-//    I(b_n1)		<+ V(b_n1);
-//    I(b_n2) 		<+ white_noise(2 * `P_Q * it,		"shot");
-//    I(b_n2)		<+ V(b_n2);
-//
-//    I(bi,ei) 		<+ V(b_n1); 
-//    I(ci,ei) 		<+ V(b_n2)+ddt((betadc/2)*alit*Tf*alit*Tf*ddt(V(b_n2))); 
-//    I(ci,ei)		<+ betadc*ddt(-(Tf*alit)*V(b_n1));                       
-end     //of Noise_sources
-
-end //analog
-endmodule
+//HICUM Level_2 Version_2.24: A Verilog-A Description
+
+//dw 09/10: Modifications for ngspice and adms:
+// backup to ddx for capacitance calculation
+// all V(...) <+ 0.0; are replaced by I(...) < V(...)/`MIN_R;
+// using GMIN from ngspice: _circuit_gmin
+// switch of section for correlated noise (see below)
+// removed obsolete variables S_avl, f_p
+// don't like internal variable declaration
+
+//**************New Implementations*****************
+
+//******************************************************************************
+//This code contains a Verilog-A implementation of Vertical Non-Quasi-Static(NQS) 
+//Effects using adjunct gyrator networks. To turn on this effect please set FLNQS=1. 
+//Although Vertical NQS effects have been taken into account in HICUM from the very 
+//beginning (see original FTN code and built-in v2.1 HICUM model inside most of the 
+//existing circuit simulators) their implementation has been based on Weil's approach. 
+//However, using Verilog, it is presently not possible to implement Weil's approach, 
+//since there does not exist access to previous time-steps of the simulatior. 
+//The nearly available Verilog-A solution reproduces the results of previous 
+//HICUM versions (cf. documentation).
+//******************************************************************************
+
+//******************************************************************************
+// Implementation of noise correlation
+// Please turn-off (by front slash “//”) the noise correlation code section for simulation with Spectre
+//******************************************************************************
+
+// ***************Bug fix and optimization*************
+// 12/09: Elimination of 'ddx' operator for internal capacitance determination
+//        Capacitances will be calculated by Analytical Equations 
+// 10/09: Temperature coefficient (ZETAxyz) range modified to [-10:10]
+// 09/09: VPT ranges modified from [0:inf] to (0:inf]
+// 07/09: DT0H rabge modified from no range to (-inf:inf) 
+// 03/09: Simplified input NQS adjacent circuit (RC network)
+// 04/08: New range has been defined for FDQR0.
+// 11/07: Bugs have been fixed in macro HICFCI and HICQFC
+// 10/06: in @(initial_model), external if-block for HICTUN_T removed
+// 11/06: within HICQFC, minor changes made for LATB<=0.01;
+// also HICFCI and HICFCT are changed accordingly
+// to ensure correct derivatives
+// Upper limit of FGEO parameter was changed to infinity.
+// 12/06: expressions for Cdei and Cdci are corrected not to include
+// Ccdei and Cbdci respectively (used in Crbi expression).
+
+// 01/06: FCdf1_dw assigned expression (missing in v2.21)
+// FCa and FCa1 are found to have same expression: FCa is omitted in those cases
+// FCa1 written instead of FCa in the expression for FCf_ci
+// Thermal node "tnode" set as external
+// zetasct = mg+1-2.5 changed to zetasct = mg-1.5;
+// Code optimization: Temperature dependent parts are moduled in two separate blocks:
+// within @(initial_model) when self-heating is OFF
+// outside @(initial_model) when self-heating is ON
+// 03/06 : Further fix
+// vlim_t,ibcis_t,ibcxs_t,itss_t,iscs_t considered in compatibility block
+// ddt() operators are separated in contribution expressions.
+// FLCOMP parameter is given different values
+// 05/06:
+// all if-else blocks marked with begin-end
+// unused variables deleted
+// all series resistors and RTH are allowed to have a minimum value MIN_R
+// only tunelling current source contribution within if-then-else
+// 06/06: HICRBI deleted and instead the code changed (hyperbolic smoothing in
+// conductivity modulation part) and put in relevant portion of the code.
+// 07/06: ddx() operator used to find out capacitances from charges:
+// QJMODF,QJMOD,HICJQ changed accordingly
+// Lateral NQS effect modified with ddx() operator.
+// HICFCT included for downward compatibility reason.
+// Few macros are taken inside the code: HICICK, HICAVL, HICTUN (more optimized),
+// internal base resistance (Qjci included under conductivity modulation, hyperbolic smoothing used)
+// Gmin added at (bi,ei) and (bi,ci) branches.
+// 08/06: Units added in the parameter descriptions.
+
+// *********************************************************************************
+// 06/06: Comment on NODE COLLAPSING:
+// Presently this verilog code permits a minimum of 1 milli-Ohm resistance for any
+// series resistance as well as for thermal resistance RTH. If any of the resistance
+// values drops below this minimum value, the corresponding nodes are shorted with
+// zero voltage contribution. We want the model compilers/simulators deal this
+// situation in such a manner that the corresponding node is COLLAPSED.
+// We expect that the simulators should permit current contribution statement
+// for any branch with resistance value more than (or equal to) 1 milli-Ohm without
+// any convergence problem. In fact, we wish NOT to have to use a voltage contribution
+// statement in our Verilog code, except as an indication for the model compiler/simulator
+// to interprete a zero branch voltage as NODE-COLLAPSING action.
+// **********************************************************************************
+
+
+//Default simulator: Spectre
+
+`ifdef insideADMS
+ `define MODEL @(initial_model)
+ `define NOISE @(noise)
+ `define ATTR(txt) (*txt*)
+`else
+ `define MODEL
+ `define NOISE
+ `define ATTR(txt)
+`endif
+
+
+`define VPT_thresh      1.0e2
+`define Dexp_lim        80.0
+`define Cexp_lim        80.0
+`define DFa_fj          1.921812
+`define RTOLC           1.0e-5
+`define l_itmax         100
+`define TMAX            326.85
+`define TMIN            -100.0
+`define LN_EXP_LIMIT    11.0
+`define MIN_R           0.001
+//`define Gmin            1.0e-12
+//`define Gmin      $simparam("gmin",1e-12)  //suggested by L.L
+
+//ADS
+//`include "constants.vams"
+//`include "disciplines.vams"
+//`include "compact.vams"
+
+//Spectre
+`include "constants.h"
+`include "discipline.h"
+
+//////////////Explicit Capacitance and Charge Expression///////////////
+
+// DEPLETION CHARGE CALCULATION
+// Hyperbolic smoothing used; no punch-through
+// INPUT:
+//  c_0		: zero-bias capacitance
+//  u_d		: built-in voltage
+//  z		: exponent coefficient
+//  a_j		: control parameter for C peak value at high forward bias
+//  U_cap	: voltage across junction
+// IMPLICIT INPUT:
+//  VT		: thermal voltage
+// OUTPUT:
+//  Qz		: depletion Charge 
+//  C		: depletion capacitance
+`define QJMODF(c_0,u_d,z,a_j,U_cap,C,Qz)\
+    if(c_0 > 0.0) begin\
+        DFV_f	 = u_d*(1.0-exp(-ln(a_j)/z));\
+        DFv_e	 = (DFV_f-U_cap)/VT;\
+        DFs_q	 = sqrt(DFv_e*DFv_e+`DFa_fj);\
+        DFs_q2	 = (DFv_e+DFs_q)*0.5;\
+        DFv_j	 = DFV_f-VT*DFs_q2;\
+        DFdvj_dv = DFs_q2/DFs_q;\
+        DFb	     = ln(1.0-DFv_j/u_d);\
+        DFC_j1   = c_0*exp(-z*DFb)*DFdvj_dv;\
+        C		 = DFC_j1+a_j*c_0*(1.0-DFdvj_dv);\
+        DFQ_j	 = c_0*u_d*(1.0-exp(DFb*(1.0-z)))/(1.0-z);\
+        Qz	     = DFQ_j+a_j*c_0*(U_cap-DFv_j);\
+    end else begin\
+        C        = 0.0;\
+        Qz	     = 0.0;\
+    end
+   
+////////////////////////////////////////////////////////////////
+
+
+//////////////Explicit Capacitance and Charge Expression///////////////
+
+
+// DEPLETION CHARGE CALCULATION CONSIDERING PUNCH THROUGH
+// smoothing of reverse bias region (punch-through) 
+// and limiting to a_j=Cj,max/Cj0 for forward bias.
+// Important for base-collector and collector-substrate junction
+// INPUT:
+//  c_0		: zero-bias capacitance
+//  u_d		: built-in voltage
+//  z 		: exponent coefficient
+//  a_j		: control parameter for C peak value at high forward bias
+//  v_pt	: punch-through voltage (defined as qNw^2/2e)
+//  U_cap	: voltage across junction
+// IMPLICIT INPUT:
+//  VT		: thermal voltage
+// OUTPUT:
+//  Qz		: depletion charge
+//  C		: depletion capacitance
+`define QJMOD(c_0,u_d,z,a_j,v_pt,U_cap,C,Qz)\
+    if(c_0 > 0.0) begin\
+        Dz_r	= z/4.0;\
+        Dv_p	= v_pt-u_d;\
+        DV_f	= u_d*(1.0-exp(-ln(a_j)/z));\
+        DC_max	= a_j*c_0;\
+        DC_c	= c_0*exp((Dz_r-z)*ln(v_pt/u_d));\
+        Dv_e	= (DV_f-U_cap)/VT;\
+        if(Dv_e < `Cexp_lim) begin\
+            De	    = exp(Dv_e);\
+            De_1	= De/(1.0+De);\
+            Dv_j1	= DV_f-VT*ln(1.0+De);\
+        end else begin\
+            De_1	= 1.0;\
+            Dv_j1	= U_cap;\
+        end\
+        Da	    = 0.1*Dv_p+4.0*VT;\
+        Dv_r	= (Dv_p+Dv_j1)/Da;\
+        if(Dv_r < `Cexp_lim) begin\
+            De	    = exp(Dv_r);\
+            De_2	= De/(1.0+De);\
+            Dv_j2	= -Dv_p+Da*ln(1.0+De);\
+        end else begin\
+            De_2	= 1.0;\
+            Dv_j2	= Dv_j1;\
+        end\
+        Dv_j4	= U_cap-Dv_j1;\
+        DCln1	= ln(1.0-Dv_j1/u_d);\
+        DCln2	= ln(1.0-Dv_j2/u_d);\
+        Dz1	    = 1.0-z;\
+        Dzr1	= 1.0-Dz_r;\
+        DC_j1	= c_0*exp(DCln2*(-z))*De_1*De_2;\
+        DC_j2	= DC_c*exp(DCln1*(-Dz_r))*(1.0-De_2);\
+        DC_j3	= DC_max*(1.0-De_1);\
+        C		= DC_j1+DC_j2+DC_j3;\
+        DQ_j1	= c_0*(1.0-exp(DCln2*Dz1))/Dz1;\
+        DQ_j2	= DC_c*(1.0-exp(DCln1*Dzr1))/Dzr1;\
+        DQ_j3	= DC_c*(1.0-exp(DCln2*Dzr1))/Dzr1;\
+        Qz	    = (DQ_j1+DQ_j2-DQ_j3)*u_d+DC_max*Dv_j4;\
+    end else begin\
+        C	    = 0.0;\
+        Qz	    = 0.0;\
+    end
+
+
+// DEPLETION CHARGE & CAPACITANCE CALCULATION SELECTOR
+// Dependent on junction punch-through voltage
+// Important for collector related junctions
+`define HICJQ(c_0,u_d,z,v_pt,U_cap,C,Qz)\
+    if(v_pt < `VPT_thresh) begin\
+        `QJMOD(c_0,u_d,z,2.4,v_pt,U_cap,C,Qz)\
+    end else begin\
+        `QJMODF(c_0,u_d,z,2.4,U_cap,C,Qz)\
+    end
+
+
+// A CALCULATION NEEDED FOR COLLECTOR MINORITY CHARGE FORMULATION
+// INPUT:
+//  zb,zl       : zeta_b and zeta_l (model parameters, TED 10/96)
+//  w           : normalized injection width
+// OUTPUT:
+// hicfcio      : function of equation (2.1.17-10)
+`define HICFCI(zb,zl,w,hicfcio,dhicfcio_dw)\
+    z       = zb*w;\
+    lnzb    = ln(1+zb*w);\
+    if(z > 1.0e-6) begin\
+        x               = 1.0+z;\
+        a               = x*x;\
+        a2              = 0.250*(a*(2.0*lnzb-1.0)+1.0);\
+        a3              = (a*x*(3.0*lnzb-1.0)+1.0)/9.0;\
+        r               = zl/zb;\
+        hicfcio         = ((1.0-r)*a2+r*a3)/zb;\
+        dhicfcio_dw     = ((1.0-r)*x+r*a)*lnzb;\
+    end else begin\
+        a               = z*z;\
+        a2              = 3.0+z-0.25*a+0.10*z*a;\
+        a3              = 2.0*z+0.75*a-0.20*a*z;\
+        hicfcio         = (zb*a2+zl*a3)*w*w/6.0;\
+        dhicfcio_dw     = (1+zl*w)*(1+z)*lnzb;\
+    end
+
+
+// NEEDED TO CALCULATE WEIGHTED ICCR COLLECTOR MINORITY CHARGE
+// INPUT:
+//  z : zeta_b or zeta_l
+//  w : normalized injection width
+// OUTPUT:
+//  hicfcto     : output
+//  dhicfcto_dw : derivative of output wrt w
+`define HICFCT(z,w,hicfcto,dhicfcto_dw)\
+    a = z*w;\
+    lnz = ln(1+z*w);\
+    if (a > 1.0e-6) begin\
+        hicfcto     = (a - lnz)/z;\
+        dhicfcto_dw = a / (1.0 + a);\
+    end else begin\
+        hicfcto     = 0.5 * a * w;\
+        dhicfcto_dw = a;\
+    end
+
+
+// COLLECTOR CURRENT SPREADING CALCULATION
+// collector minority charge incl. 2D/3D current spreading (TED 10/96)
+// INPUT:
+//  Ix                          : forward transport current component (itf)
+//  I_CK                        : critical current
+//  FFT_pcS                     : dependent on fthc and thcs (parameters)
+// IMPLICIT INPUT:
+//  ahc, latl, latb             : model parameters
+//  VT                          : thermal voltage
+// OUTPUT:
+//  Q_fC, Q_CT: actual and ICCR (weighted) hole charge
+//  T_fC, T_cT: actual and ICCR (weighted) transit time
+//  Derivative dfCT_ditf not properly implemented yet
+`define HICQFC(Ix,I_CK,FFT_pcS,Q_fC,Q_CT,T_fC,T_cT)\
+    Q_fC            = FFT_pcS*Ix;\
+    FCa             = 1.0-I_CK/Ix;\
+    FCrt            = sqrt(FCa*FCa+ahc);\
+    FCa_ck          = 1.0-(FCa+FCrt)/(1.0+sqrt(1.0+ahc));\
+    FCdaick_ditf    = (FCa_ck-1.0)*(1-FCa)/(FCrt*Ix);\
+    if(latb > latl) begin\
+        FCz             = latb-latl;\
+        FCxl            = 1.0+latl;\
+        FCxb            = 1.0+latb;\
+        if(latb > 0.01) begin\
+            FCln            = ln(FCxb/FCxl);\
+            FCa1            = exp((FCa_ck-1.0)*FCln);\
+            FCd_a           = 1.0/(latl-FCa1*latb);\
+            FCw             = (FCa1-1.0)*FCd_a;\
+            FCdw_daick      = -FCz*FCa1*FCln*FCd_a*FCd_a;\
+            FCa1            = ln((1.0+latb*FCw)/(1.0+latl*FCw));\
+            FCda1_dw        = latb/(1.0+latb*FCw) - latl/(1.0+latl*FCw);\
+        end else begin\
+            FCf1            = 1.0-FCa_ck;\
+            FCd_a           = 1.0/(1.0+FCa_ck*latb);\
+            FCw             = FCf1*FCd_a;\
+            FCdw_daick      = -1.0*FCd_a*FCd_a*FCxb*FCd_a;\
+            FCa1            = FCz*FCw;\
+            FCda1_dw        = FCz;\
+        end\
+        FCf_CT          = 2.0/FCz;\
+        FCw2            = FCw*FCw;\
+        FCf1            = latb*latl*FCw*FCw2/3.0+(latb+latl)*FCw2/2.0+FCw;\
+        FCdf1_dw        = latb*latl*FCw2 + (latb+latl)*FCw + 1.0;\
+        `HICFCI(latb,latl,FCw,FCf2,FCdf2_dw)\
+        `HICFCI(latl,latb,FCw,FCf3,FCdf3_dw)\
+        FCf_ci          = FCf_CT*(FCa1*FCf1-FCf2+FCf3);\
+        FCdfc_dw        = FCf_CT*(FCa1*FCdf1_dw+FCda1_dw*FCf1-FCdf2_dw+FCdf3_dw);\
+        FCdw_ditf       = FCdw_daick*FCdaick_ditf;\
+        FCdfc_ditf      = FCdfc_dw*FCdw_ditf;\
+        if(flcomp == 0.0 || flcomp == 2.1) begin\
+            `HICFCT(latb,FCw,FCf2,FCdf2_dw)\
+            `HICFCT(latl,FCw,FCf3,FCdf3_dw)\
+            FCf_CT          = FCf_CT*(FCf2-FCf3);\
+            FCdfCT_dw       = FCf_CT*(FCdf2_dw-FCdf3_dw);\
+            FCdfCT_ditf     = FCdfCT_dw*FCdw_ditf;\
+        end else begin\
+            FCf_CT          = FCf_ci;\
+            FCdfCT_ditf     = FCdfc_ditf;\
+        end\
+    end else begin\
+        if(latb > 0.01) begin\
+            FCd_a           = 1.0/(1.0+FCa_ck*latb);\
+            FCw             = (1.0-FCa_ck)*FCd_a;\
+            FCdw_daick      = -(1.0+latb)*FCd_a*FCd_a;\
+        end else begin\
+            FCw             = 1.0-FCa_ck-FCa_ck*latb;\
+            FCdw_daick      = -(1.0+latb);\
+        end\
+        FCw2            = FCw*FCw;\
+        FCz             = latb*FCw;\
+        FCz_1           = 1.0+FCz;\
+        FCd_f           = 1.0/(FCz_1);\
+        FCf_ci          = FCw2*(1.0+FCz/3.0)*FCd_f;\
+        FCdfc_dw        = 2.0*FCw*(FCz_1+FCz*FCz/3.0)*FCd_f*FCd_f;\
+        FCdw_ditf       = FCdw_daick*FCdaick_ditf;\
+        FCdfc_ditf      = FCdfc_dw*FCdw_ditf;\
+        if(flcomp == 0.0 || flcomp == 2.1) begin\
+            if (FCz > 0.001) begin\
+                FCf_CT          = 2.0*(FCz_1*ln(FCz_1)-FCz)/(latb*latb*FCz_1);\
+                FCdfCT_dw       = 2.0*FCw*FCd_f*FCd_f;\
+            end else begin\
+                FCf_CT          = FCw2*(1.0-FCz/3.0)*FCd_f;\
+                FCdfCT_dw       = 2.0*FCw*(1.0-FCz*FCz/3.0)*FCd_f*FCd_f;\
+            end\
+            FCdfCT_ditf     = FCdfCT_dw*FCdw_ditf;\
+        end else begin\
+            FCf_CT          = FCf_ci;\
+            FCdfCT_ditf     = FCdfc_ditf;\
+        end\
+    end\
+    Q_CT    = Q_fC*FCf_CT;\
+    Q_fC    = Q_fC*FCf_ci;\
+    T_fC    = FFT_pcS*(FCf_ci+Ix*FCdfc_ditf);\
+    T_cT    = FFT_pcS*(FCf_CT+Ix*FCdfCT_ditf);
+
+// TRANSIT-TIME AND STORED MINORITY CHARGE
+// INPUT:
+//  itf         : forward transport current
+//  I_CK        : critical current
+//  T_f         : transit time    \
+//  Q_f         : minority charge / for low current
+// IMPLICIT INPUT:
+//  tef0, gtfe, fthc, thcs, ahc, latl, latb     : model parameters
+// OUTPUT:
+//  T_f         : transit time    \
+//  Q_f         : minority charge / transient analysis
+//  T_fT        : transit time    \
+//  Q_fT        : minority charge / ICCR (transfer current)
+//  Q_bf        : excess base charge
+`define HICQFF(itf,I_CK,T_f,Q_f,T_fT,Q_fT,Q_bf)\
+    if(itf < 1.0e-6*I_CK) begin\
+        Q_fT            = Q_f;\
+        T_fT            = T_f;\
+    end else begin\
+        FFa             = I_CK/itf;\
+        FFd_TfE         = tef0_t*exp(-gtfe*ln(FFa));\
+        FFd_QfE         = FFd_TfE*itf/(gtfe+1.0);\
+        FFT_fbS         = (1.0-fthc)*thcs_t;\
+        FFx             = 1.0-FFa;\
+        FFs             = sqrt(FFx*FFx+ahc);\
+        FFw             = (FFx+FFs)/(1.0+sqrt(1.0+ahc));\
+        FFw_2           = FFw*FFw;\
+        FFd_QfB         = FFT_fbS*itf*FFw_2;\
+        Q_bf            = FFd_QfB;\
+        FFa_w           = FFw_2*(1.0+2.0*FFa/FFs);\
+        FFd_TfB         = FFT_fbS*FFa_w;\
+        FFT_pcS         = fthc*thcs_t;\
+        if(latb <= 0.0 && latl <= 0.0) begin\
+            FFQ_fC        = FFT_pcS*itf*FFw_2;\
+            FFT_fC        = FFT_pcS*FFa_w;\
+            FFQ_cT        = FFQ_fC;\
+            FFT_cT        = FFT_fC;\
+        end else begin\
+            `HICQFC(itf,I_CK,FFT_pcS,FFQ_fC,FFQ_cT,FFT_fC,FFT_cT)\
+        end\
+        Q_f             = Q_f+FFd_QfB;\
+        T_f             = T_f+FFd_TfB;\
+        Q_fT            = Q_f+hfe*FFd_QfE+hfc*FFQ_cT;\
+        T_fT            = T_f+hfe*FFd_TfE+hfc*FFT_cT;\
+        Q_f             = Q_f+FFd_QfE+FFQ_fC;\
+        T_f             = T_f+FFd_TfE+FFT_fC;\
+    end
+
+
+
+
+// IDEAL DIODE (WITHOUT CAPACITANCE):
+// conductance calculation not required
+// INPUT:
+//  IS, IST     : saturation currents (model parameter related)
+//  UM1         : ideality factor
+//  U           : branch voltage
+// IMPLICIT INPUT:
+//  VT          : thermal voltage
+// OUTPUT:
+//  Iz          : diode current
+`define HICDIO(IS,IST,UM1,U,Iz)\
+    DIOY    = U/(UM1*VT);\
+    if (IS > 0.0) begin\
+        if (DIOY > `Dexp_lim) begin\
+            le      = (1 + (DIOY - `Dexp_lim));\
+            DIOY    = `Dexp_lim;\
+        end else begin\
+            le      = 1;\
+        end\
+        le      = le*limexp(DIOY);\
+        Iz      = IST*(le-1.0);\
+        if(DIOY <= -14.0) begin\
+            Iz      = -IST;\
+        end\
+    end else begin\
+        Iz      = 0.0;\
+    end
+
+
+
+// TEMPERATURE UPDATE OF JUNCTION CAPACITANCE RELATED PARAMETERS
+// INPUT:
+//  mostly model parameters
+//  x           : zero bias junction capacitance
+//  y           : junction built-in potencial
+//  z           : grading co-efficient
+//  w           : ratio of maximum to zero-bias value of capacitance or punch-through voltage
+//  is_al       : condition factor to check what "w" stands for
+//  vgeff       : band-gap voltage
+// IMPLICIT INPUT:
+//  VT          : thermal voltage
+//  vt0,qtt0,ln_qtt0,mg : other model variables
+// OUTPUT:
+//  c_j_t               : temperature update of "c_j"
+//  vd_t                : temperature update of "vd0"
+//  w_t                 : temperature update of "w"
+`define TMPHICJ(c_j,vd0,z,w,is_al,vgeff,c_j_t,vd_t,w_t)\
+    if (c_j > 0.0) begin\
+        vdj0    = 2*vt0*ln(exp(vd0*0.5/vt0)-exp(-0.5*vd0/vt0));\
+        vdjt    = vdj0*qtt0+vgeff*(1-qtt0)-mg*VT*ln_qtt0;\
+        vdt     = vdjt+2*VT*ln(0.5*(1+sqrt(1+4*exp(-vdjt/VT))));\
+        vd_t    = vdt;\
+        c_j_t   = c_j*exp(z*ln(vd0/vd_t));\
+        if (is_al == 1) begin\
+            w_t = w*vd_t/vd0;\
+        end else begin\
+            w_t = w;\
+        end\
+    end else begin\
+        c_j_t   = c_j;\
+        vd_t    = vd0;\
+        w_t     = w;\
+    end
+
+    
+    
+module hic2_full (c,b,e,s,tnode);
+
+//Node definitions
+
+inout           c,b,e,s,tnode;
+electrical      c,b,e,s,ci,ei,bp,bi,si;
+electrical	xf1,xf2;
+electrical      xf;  //RC nw
+
+electrical      tnode;
+electrical 	    n1,n2;
+
+//Branch definitions
+branch          (b,bp)          br_bbp_i;
+branch          (b,bp)          br_bbp_v;
+branch          (ci,c)          br_cic_i;
+branch          (ci,c)          br_cic_v;
+branch          (ei,e)          br_eie_i;
+branch          (ei,e)          br_eie_v;
+branch          (bp,bi)         br_bpbi_i;
+branch          (bp,bi)         br_bpbi_v;
+branch          (si,s)          br_sis_i;
+branch          (si,s)          br_sis_v;
+branch          (bi,ei)         br_biei;
+branch          (bi,ci)         br_bici;
+branch          (ci,bi)         br_cibi;
+branch          (ci,ei)         br_ciei;
+branch          (ei,ci)         br_eici;
+branch          (bp,e)          br_bpe;
+branch          (b,e)           br_be;
+branch          (bp,ei)         br_bpei;
+branch          (bp,ci)         br_bpci;
+branch          (b,ci)          br_bci;
+branch          (si,ci)         br_sici;
+branch          (bp,si)         br_bpsi;
+branch          (tnode )        br_sht;
+
+//Phase network for ITF
+branch		(xf1 )		br_bxf1;
+branch		(xf1 )		br_cxf1;
+branch		(xf2 )		br_bxf2;
+branch		(xf2 )		br_cxf2;
+
+//Phase network for QF
+
+branch    (xf )     br_bxf;  //for RC nw
+branch    (xf )     br_cxf;  //for RC nw
+
+//Noise
+
+branch 		(n1 ) 	b_n1;
+branch 		(n2 ) 	b_n2;	
+	
+
+
+// -- ###########################################################
+// -- ###########     Parameters initialization  ################
+// -- ###########################################################
+
+
+//Transfer current
+parameter real c10      = 2.0E-30       from [0:1]      `ATTR(info="GICCR constant" unit="A^2s");
+parameter real qp0      = 2.0E-14       from (0:1]      `ATTR(info="Zero-bias hole charge" unit="Coul");
+parameter real ich      = 0.0           from [0:inf)    `ATTR(info="High-current correction for 2D and 3D effects" unit="A"); //`0' signifies infinity
+parameter real hfe      = 1.0           from [0:inf]    `ATTR(info="Emitter minority charge weighting factor in HBTs");
+parameter real hfc      = 1.0           from [0:inf]    `ATTR(info="Collector minority charge weighting factor in HBTs");
+parameter real hjei     = 1.0           from [0:100]    `ATTR(info="B-E depletion charge weighting factor in HBTs");
+parameter real hjci     = 1.0           from [0:100]    `ATTR(info="B-C depletion charge weighting factor in HBTs");
+
+//Base-Emitter diode currents
+parameter real ibeis    = 1.0E-18       from [0:1]      `ATTR(info="Internal B-E saturation current" unit="A");
+parameter real mbei     = 1.0           from (0:10]     `ATTR(info="Internal B-E current ideality factor");
+parameter real ireis    = 0.0           from [0:1]      `ATTR(info="Internal B-E recombination saturation current" unit="A");
+parameter real mrei     = 2.0           from (0:10]     `ATTR(info="Internal B-E recombination current ideality factor");
+parameter real ibeps    = 0.0           from [0:1]      `ATTR(info="Peripheral B-E saturation current" unit="A");
+parameter real mbep     = 1.0           from (0:10]     `ATTR(info="Peripheral B-E current ideality factor");
+parameter real ireps    = 0.0           from [0:1]      `ATTR(info="Peripheral B-E recombination saturation current" unit="A");
+parameter real mrep     = 2.0           from (0:10]     `ATTR(info="Peripheral B-E recombination current ideality factor");
+parameter real mcf      = 1.0           from (0:10]     `ATTR(info="Non-ideality factor for III-V HBTs");
+
+//Transit time for excess recombination current at b-c barrier
+parameter real tbhrec   = 0.0           from [0:inf)    `ATTR(info="Base current recombination time constant at B-C barrier for high forward injection" unit="s");
+
+//Base-Collector diode currents
+parameter real ibcis    = 1.0E-16       from [0:1.0]    `ATTR(info="Internal B-C saturation current" unit="A");
+parameter real mbci     = 1.0           from (0:10]     `ATTR(info="Internal B-C current ideality factor");
+parameter real ibcxs    = 0.0           from [0:1.0]    `ATTR(info="External B-C saturation current" unit="A");
+parameter real mbcx     = 1.0           from (0:10]     `ATTR(info="External B-C current ideality factor");
+
+//Base-Emitter tunneling current
+parameter real ibets    = 0.0           from [0:1]      `ATTR(info="B-E tunneling saturation current" unit="A");
+parameter real abet     = 40            from [0:inf)    `ATTR(info="Exponent factor for tunneling current");
+parameter integer tunode= 1             from [0:1]      `ATTR(info="Specifies the base node connection for the tunneling current"); // =1 signifies perimeter node
+
+//Base-Collector avalanche current
+parameter real favl     = 0.0           from [0:inf)    `ATTR(info="Avalanche current factor" unit="1/V");
+parameter real qavl     = 0.0           from [0:inf)    `ATTR(info="Exponent factor for avalanche current" unit="Coul");
+parameter real alfav    = 0.0                           `ATTR(info="Relative TC for FAVL" unit="1/K");
+parameter real alqav    = 0.0                           `ATTR(info="Relative TC for QAVL" unit="1/K");
+
+//Series resistances
+parameter real rbi0     = 0.0           from [0:inf)    `ATTR(info="Zero bias internal base resistance" unit="Ohm");
+parameter real rbx      = 0.0           from [0:inf)    `ATTR(info="External base series resistance" unit="Ohm");
+parameter real fgeo     = 0.6557        from [0:inf]    `ATTR(info="Factor for geometry dependence of emitter current crowding");
+parameter real fdqr0    = 0.0           from [-0.5:100]    `ATTR(info="Correction factor for modulation by B-E and B-C space charge layer");
+parameter real fcrbi    = 0.0           from [0:1]      `ATTR(info="Ratio of HF shunt to total internal capacitance (lateral NQS effect)");
+parameter real fqi      = 1.0           from [0:1]      `ATTR(info="Ration of internal to total minority charge");
+parameter real re       = 0.0           from [0:inf)    `ATTR(info="Emitter series resistance" unit="Ohm");
+parameter real rcx      = 0.0           from [0:inf)    `ATTR(info="External collector series resistance" unit="Ohm");
+
+//Substrate transistor
+parameter real itss     = 0.0           from [0:1.0]    `ATTR(info="Substrate transistor transfer saturation current" unit="A");
+parameter real msf      = 1.0           from (0:10]     `ATTR(info="Forward ideality factor of substrate transfer current");
+parameter real iscs     = 0.0           from [0:1.0]    `ATTR(info="C-S diode saturation current" unit="A");
+parameter real msc      = 1.0           from (0:10]     `ATTR(info="Ideality factor of C-S diode current");
+parameter real tsf      = 0.0           from [0:inf)    `ATTR(info="Transit time for forward operation of substrate transistor" unit="s");
+
+//Intra-device substrate coupling
+parameter real rsu      = 0.0           from [0:inf)    `ATTR(info="Substrate series resistance" unit="Ohm");
+parameter real csu      = 0.0           from [0:inf)    `ATTR(info="Substrate shunt capacitance" unit="F");
+
+//Depletion Capacitances
+parameter real cjei0    = 1.0E-20       from [0:inf)    `ATTR(info="Internal B-E zero-bias depletion capacitance" unit="F");
+parameter real vdei     = 0.9           from (0:10]     `ATTR(info="Internal B-E built-in potential" unit="V");
+parameter real zei      = 0.5	          from (0:1]      `ATTR(info="Internal B-E grading coefficient");
+parameter real ajei     = 2.5           from [1:inf)    `ATTR(info="Ratio of maximum to zero-bias value of internal B-E capacitance");
+parameter real cjep0    = 1.0E-20       from [0:inf)    `ATTR(info="Peripheral B-E zero-bias depletion capacitance" unit="F");
+parameter real vdep     = 0.9           from (0:10]     `ATTR(info="Peripheral B-E built-in potential" unit="V");
+parameter real zep      = 0.5           from (0:1]      `ATTR(info="Peripheral B-E grading coefficient");
+parameter real ajep     = 2.5           from [1:inf)    `ATTR(info="Ratio of maximum to zero-bias value of peripheral B-E capacitance");
+parameter real cjci0    = 1.0E-20       from [0:inf)    `ATTR(info="Internal B-C zero-bias depletion capacitance" unit="F");
+parameter real vdci     = 0.7           from (0:10]     `ATTR(info="Internal B-C built-in potential" unit="V");
+parameter real zci      = 0.4           from (0:1]      `ATTR(info="Internal B-C grading coefficient");
+parameter real vptci    = 100           from (0:100]    `ATTR(info="Internal B-C punch-through voltage" unit="V");
+parameter real cjcx0    = 1.0E-20       from [0:inf)    `ATTR(info="External B-C zero-bias depletion capacitance" unit="F");
+parameter real vdcx     = 0.7           from (0:10]     `ATTR(info="External B-C built-in potential" unit="V");
+parameter real zcx      = 0.4           from (0:1]      `ATTR(info="External B-C grading coefficient");
+parameter real vptcx    = 100           from (0:100]    `ATTR(info="External B-C punch-through voltage" unit="V");
+parameter real fbcpar   = 0.0           from [0:1]      `ATTR(info="Partitioning factor of parasitic B-C cap");
+parameter real fbepar   = 1.0           from [0:1]      `ATTR(info="Partitioning factor of parasitic B-E cap");
+parameter real cjs0     = 0.0           from [0:inf)    `ATTR(info="C-S zero-bias depletion capacitance" unit="F");
+parameter real vds      = 0.6           from (0:10]     `ATTR(info="C-S built-in potential" unit="V");
+parameter real zs       = 0.5           from (0:1]      `ATTR(info="C-S grading coefficient");
+parameter real vpts     = 100           from (0:100]    `ATTR(info="C-S punch-through voltage" unit="V"); 
+
+//Diffusion Capacitances
+parameter real t0       = 0.0           from [0:inf)    `ATTR(info="Low current forward transit time at VBC=0V" unit="s");
+parameter real dt0h     = 0.0           from (-inf:inf) `ATTR(info="Time constant for base and B-C space charge layer width modulation" unit="s");
+parameter real tbvl     = 0.0           from [0:inf)    `ATTR(info="Time constant for modelling carrier jam at low VCE" unit="s");
+parameter real tef0     = 0.0           from [0:inf)    `ATTR(info="Neutral emitter storage time" unit="s");
+parameter real gtfe     = 1.0           from (0:10]     `ATTR(info="Exponent factor for current dependence of neutral emitter storage time");
+parameter real thcs     = 0.0           from [0:inf)    `ATTR(info="Saturation time constant at high current densities" unit="s");
+parameter real ahc      = 0.1           from (0:10]     `ATTR(info="Smoothing factor for current dependence of base and collector transit time");
+parameter real fthc     = 0.0           from [0:1]      `ATTR(info="Partitioning factor for base and collector portion");
+parameter real rci0     = 150           from (0:inf)    `ATTR(info="Internal collector resistance at low electric field" unit="Ohm");
+parameter real vlim     = 0.5           from (0:10]     `ATTR(info="Voltage separating ohmic and saturation velocity regime" unit="V");
+parameter real vces     = 0.1           from [0:1]      `ATTR(info="Internal C-E saturation voltage" unit="V");
+parameter real vpt      = 100.0         from (0:inf]    `ATTR(info="Collector punch-through voltage" unit="V"); // `0' signifies infinity
+parameter real tr       = 0.0           from [0:inf)    `ATTR(info="Storage time for inverse operation" unit="s");
+  
+//Isolation Capacitances
+parameter real cbepar   = 0.0           from [0:inf)    `ATTR(info="Total parasitic B-E capacitance" unit="F");
+parameter real cbcpar   = 0.0           from [0:inf)    `ATTR(info="Total parasitic B-C capacitance" unit="F");
+
+//Non-quasi-static Effect
+parameter real alqf     = 0.0           from [0:1]      `ATTR(info="Factor for additional delay time of minority charge");
+parameter real alit     = 0.0           from [0:1]      `ATTR(info="Factor for additional delay time of transfer current");
+parameter integer flnqs = 0             from [0:1]      `ATTR(info="Flag for turning on and off of vertical NQS effect");
+  
+//Noise
+parameter real kf       = 0.0           from [0:inf)    `ATTR(info="Flicker noise coefficient");
+parameter real af       = 2.0           from (0:10]     `ATTR(info="Flicker noise exponent factor");
+parameter integer cfbe  = -1            from [-2:-1]    `ATTR(info="Flag for determining where to tag the flicker noise source");
+
+
+//Lateral Geometry Scaling (at high current densities)
+parameter real latb     = 0.0           from [0:inf)    `ATTR(info="Scaling factor for collector minority charge in direction of emitter width");
+parameter real latl     = 0.0           from [0:inf)    `ATTR(info="Scaling factor for collector minority charge in direction of emitter length");
+
+//Temperature dependence
+parameter real vgb      = 1.17          from (0:10]     `ATTR(info="Bandgap voltage extrapolated to 0 K" unit="V");
+parameter real alt0     = 0.0                           `ATTR(info="First order relative TC of parameter T0" unit="1/K");
+parameter real kt0      = 0.0                           `ATTR(info="Second order relative TC of parameter T0");
+parameter real zetaci   = 0.0           from [-10:10]   `ATTR(info="Temperature exponent for RCI0");
+parameter real alvs     = 0.0                           `ATTR(info="Relative TC of saturation drift velocity" unit="1/K");
+parameter real alces    = 0.0                           `ATTR(info="Relative TC of VCES" unit="1/K");
+parameter real zetarbi  = 0.0           from [-10:10]   `ATTR(info="Temperature exponent of internal base resistance");
+parameter real zetarbx  = 0.0           from [-10:10]   `ATTR(info="Temperature exponent of external base resistance");
+parameter real zetarcx  = 0.0           from [-10:10]   `ATTR(info="Temperature exponent of external collector resistance");
+parameter real zetare   = 0.0           from [-10:10]   `ATTR(info="Temperature exponent of emitter resistance");
+parameter real zetacx   = 1.0           from [-10:10]   `ATTR(info="Temperature exponent of mobility in substrate transistor transit time");
+parameter real vge      = 1.17          from (0:10]     `ATTR(info="Effective emitter bandgap voltage" unit="V");
+parameter real vgc      = 1.17          from (0:10]     `ATTR(info="Effective collector bandgap voltage" unit="V");
+parameter real vgs      = 1.17          from (0:10]     `ATTR(info="Effective substrate bandgap voltage" unit="V");
+parameter real f1vg     =-1.02377e-4                    `ATTR(info="Coefficient K1 in T-dependent band-gap equation");
+parameter real f2vg     = 4.3215e-4                     `ATTR(info="Coefficient K2 in T-dependent band-gap equation");
+parameter real zetact   = 3.0           from [-10:10]   `ATTR(info="Exponent coefficient in transfer current temperature dependence");
+parameter real zetabet  = 3.5           from [-10:10]   `ATTR(info="Exponent coefficient in B-E junction current temperature dependence");
+parameter real alb      = 0.0                           `ATTR(info="Relative TC of forward current gain for V2.1 model" unit="1/K");
+
+//Self-Heating
+parameter integer flsh  = 0             from [0:2]      `ATTR(info="Flag for turning on and off self-heating effect");
+parameter real rth      = 0.0           from [0:inf)    `ATTR(info="Thermal resistance" unit="K/W");
+parameter real cth      = 0.0           from [0:inf)    `ATTR(info="Thermal capacitance" unit="J/W");
+
+//Compatibility with V2.1
+parameter real flcomp = 0.0             from [0:inf)    `ATTR(info="Flag for compatibility with v2.1 model (0=v2.1)");
+
+//Circuit simulator specific parameters
+parameter real tnom     = 27.0                          `ATTR(info="Temperature at which parameters are specified" unit="C");
+parameter real dt       = 0.0                           `ATTR(info="Temperature change w.r.t. chip temperature for particular transistor" unit="K");
+
+
+//
+//======================== Transistor model formulation ===================
+//
+
+    //Declaration of variables
+
+    real _circuit_gmin;
+
+    //Temperature and drift
+    real VT,Tdev,qtt0,ln_qtt0,r_VgVT,V_gT,dT,k;
+    real ireis_t,ibeis_t,ibcxs_t,ibcis_t,iscs_t,cjci0_t;
+    real cjs0_t,rci0_t,vlim_t,vces_t,thcs_t,tef0_t,rbi0_t;
+    real rbx_t,rcx_t,re_t,t0_t,vdei_t,vdci_t,vpts_t,itss_t,tsf_t;
+    real c10_t,cjei0_t,qp0_t,vdcx_t,vptcx_t,cjcx01_t,cjcx02_t;
+    real qjcx0_t_i,qjcx0_t_ii,cratio_t,c_dummy;
+    real ibeps_t,ireps_t,cjep0_t;
+    real ajei_t,qavl_t,favl_t,ibets_t,abet_t,vptci_t,vdep_t,ajep_t,zetatef;
+    real k1,k2,dvg0,vge_t,vgb_t,vgbe_t,vds_t,vt0,Tnom,Tamb,a,avs;
+    real zetabci,zetabcxt,zetasct,vgbe0,mg,vgb_t0,vge_t0,vgbe_t0,vgbc0,vgsc0;
+    real cbcpar1,cbcpar2,cbepar2,cbepar1,Oich,Ovpt,Otbhrec;
+
+    //Charges, capacitances and currents
+    real Qjci,Qjei,Qjep;
+    real it,ibei,irei,ibci,ibep,irep,ibh_rec;
+    real Qdei,Qdci,qrbi;
+    real ibet,iavl;
+    real ijbcx,ijsc,Qjs,HSUM,HSI_Tsu,Qdsu;
+
+    //Base resistance and self-heating power
+    real rbi,pterm;
+
+    //Variables for macro TMPHICJ
+    real  vdj0,vdjt,vdt;
+
+    //Model initialization
+    real k10,k20,C_1;
+
+    //Model evaluation
+    real Cjci,Cjcit,cc,Cjei,Cjep;
+    real itf,itr,Tf,Tr,VT_f,i_0f,i_0r,a_bpt,Q_0,Q_p,Q_bpt;
+    real Orci0_t,b_q,Q_fC,T_fC,T_cT,I_Tf1,T_f0,Q_fT,T_fT,Q_bf;
+    real ICKa,d1;
+    real A,a_h,Q_pT,d_Q,d_Q0;
+    real Qf,Cdei,Qr,Cdci,Crbi;
+    real ick,vc,vceff,cjcx01,cjcx02,HSa,HSb;
+    integer l_it;
+
+    //Variables for macros
+    real  DIOY,le;//HICDIO
+    real  FFT_fbS,FFa,FFx,FFs,FFw,FFw_2,FFd_QfB,FFd_TfB,FFT_pcS,FFQ_fC,FFT_fC,FFQ_cT,FFT_cT,FFd_TfE,FFd_QfE,FFa_w;//HICQFF
+    real  FCz,FCw2,FCf1,FCf2,FCf3,FCf_ci,FCz_1,FCa1,FCa_ck,FCxl,FCxb;//HICQFC
+    real  FCd_a,FCdaick_ditf,FCa,FCw,FCdw_daick,FCdfc_dw,FCdw_ditf,FCdfc_ditf,FCf_CT,FCdfCT_ditf,FCrt,FCln,lnz,FCda1_dw,FCdf1_dw,FCdf2_dw,FCdf3_dw,FCd_f,FCdfCT_dw;//HICQFC
+    real  Dz_r,Dv_p,DV_f,DC_max,DC_c,Da,Dv_e,De,De_1,Dv_j1,Dv_r,De_2,Dv_j2,Dv_j4,DQ_j1,DQ_j2,DQ_j3,DCln1,DCln2,Dz1,Dzr1,DC_j1,DC_j2,DC_j3;//QJMOD
+    real  DFV_f,DFv_e,DFv_j,DFb,DFQ_j,DFs_q,DFs_q2,DFdvj_dv,DFC_j1;//QJMODF
+    real  z,a2,a3,r,x;//HICFCI
+    real zb,zl,lnzb,w,hicfcio,dhicfcio_dw; //HICFCT
+
+    //Noise
+    real fourkt,twoq,flicker_Pwr;
+    real thermal_Rbx,thermal_Rbi,thermal_Rcx,thermal_Re,betad,betan,betadin,betadc,icn,icn1,icn2;
+
+    //NQS
+    real Ixf1,Ixf2,Qxf1,Qxf2,Vxf1,Vxf2,Itxf,TD1,Qdeix;
+    real T, Vxf, Ixf, Qxf,fact;
+
+    real pocce,czz;
+    real Qz_nom,f_QR,ETA,Qz0,fQz;
+    real v_bord,v_q,U0,av,avl;
+    real cV_f,cv_e,cs_q,cs_q2,cv_j,cdvj_dv;
+    real a_eg,ab,aa;
+
+    //end of variables
+
+analog begin
+
+`MODEL begin : Model_initialization
+
+    Tnom    = tnom+`P_CELSIUS0;
+    Tamb    = $temperature;
+    vt0     = `P_K*Tnom /`P_Q;
+    k10     = f1vg*Tnom*ln(Tnom);
+    k20     = f2vg*Tnom;
+    avs     = alvs*Tnom;
+    vgb_t0  = vgb+k10+k20;
+    vge_t0  = vge+k10+k20;
+    vgbe_t0 = (vgb_t0+vge_t0)/2;
+    vgbe0   = (vgb+vge)/2;
+    vgbc0   = (vgb+vgc)/2;
+    vgsc0   = (vgs+vgc)/2;
+    mg      = 3-`P_Q*f1vg/`P_K;
+    zetabci = mg+1-zetaci;
+    zetabcxt= mg+1-zetacx;
+    zetasct = mg-1.5;
+
+    //Depletion capacitance splitting at b-c junction
+    //Capacitances at peripheral and external base node
+    C_1    = (1.0-fbcpar)*(cjcx0+cbcpar);
+    if (C_1 >= cbcpar) begin
+        cbcpar1 = cbcpar;
+        cbcpar2 = 0.0;
+        cjcx01  = C_1-cbcpar;
+        cjcx02  = cjcx0-cjcx01;
+    end else begin
+        cbcpar1 = C_1;
+        cbcpar2 = cbcpar-cbcpar1;
+        cjcx01  = 0.0;
+        cjcx02  = cjcx0;
+    end
+
+    //Parasitic b-e capacitance partitioning: No temperature dependence
+    cbepar2 = fbepar*cbepar;
+    cbepar1 = cbepar-cbepar2;
+
+    //Avoid devide-by-zero and define infinity other way
+    //High current correction for 2D and 3D effects
+    if (ich != 0.0) begin
+        Oich    = 1.0/ich;
+    end else begin
+        Oich    = 0.0;
+    end
+
+    //Base current recombination time constant at b-c barrier
+    if (tbhrec != 0.0) begin
+        Otbhrec = 1.0/tbhrec;
+    end else begin
+        Otbhrec = 0.0;
+    end
+
+    // Temperature and resulting parameter drift
+    if (flsh==0 || rth < `MIN_R) begin : Thermal_updat_without_self_heating
+        Tdev    = Tamb+dt;
+        if(Tdev < `TMIN + 273.15) begin
+            Tdev = `TMIN + 273.15;
+        end else begin
+            if (Tdev > `TMAX + 273.15) begin
+                Tdev = `TMAX + 273.15;
+            end
+        end
+        VT      = `P_K*Tdev /`P_Q;
+        dT      = Tdev-Tnom;
+        qtt0    = Tdev/Tnom;
+        ln_qtt0 = ln(qtt0);
+        k1      = f1vg*Tdev*ln(Tdev);
+        k2      = f2vg*Tdev;
+        vgb_t   = vgb+k1+k2;
+        vge_t   = vge+k1+k2;
+        vgbe_t  = (vgb_t+vge_t)/2;
+
+        //Internal b-e junction capacitance
+        `TMPHICJ(cjei0,vdei,zei,ajei,1,vgbe0,cjei0_t,vdei_t,ajei_t)
+
+        if (flcomp == 0.0 || flcomp == 2.1) begin
+            V_gT     = 3.0*VT*ln_qtt0 + vgb*(qtt0-1.0);
+            r_VgVT   = V_gT/VT;
+            //Internal b-e diode saturation currents
+            a        = mcf*r_VgVT/mbei - alb*dT;
+            ibeis_t  = ibeis*exp(a);
+            a        = mcf*r_VgVT/mrei - alb*dT;
+            ireis_t  = ireis*exp(a);
+            a        = mcf*r_VgVT/mbep - alb*dT;
+            //Peripheral b-e diode saturation currents
+            ibeps_t  = ibeps*exp(a);
+            a        = mcf*r_VgVT/mrep - alb*dT;
+            ireps_t  = ireps*exp(a);
+            //Internal b-c diode saturation current
+            a       = r_VgVT/mbci;
+            ibcis_t = ibcis*exp(a);
+            //External b-c diode saturation currents
+            a       = r_VgVT/mbcx;
+            ibcxs_t = ibcxs*exp(a);
+            //Saturation transfer current for substrate transistor
+            a       = r_VgVT/msf;
+            itss_t  = itss*exp(a);
+            //Saturation current for c-s diode
+            a       = r_VgVT/msc;
+            iscs_t  = iscs*exp(a);
+            //Zero bias hole charge
+            a        = vdei_t/vdei;
+            qp0_t    = qp0*(1.0+0.5*zei*(1.0-a));
+            //Voltage separating ohmic and saturation velocity regime
+            a = vlim*(1.0-alvs*dT)*exp(zetaci*ln_qtt0);
+            k = (a-VT)/VT;
+            if (k < `LN_EXP_LIMIT) begin
+                vlim_t = VT + VT*ln(1.0+exp(k));
+            end else begin
+                vlim_t = a;
+            end
+            //Neutral emitter storage time
+            a        = 1.0+alb*dT;
+            k        = 0.5*(a+sqrt(a*a+0.01));
+            tef0_t   = tef0*qtt0/k;
+        end else begin
+            //Internal b-e diode saturation currents
+            ibeis_t  = ibeis*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1));
+            ireis_t  = ireis*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1));
+            //Peripheral b-e diode saturation currents
+            ibeps_t  = ibeps*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1));
+            ireps_t  = ireps*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1));
+            //Internal b-c diode saturation currents
+            ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1));
+            //External b-c diode saturation currents
+            ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1));
+            //Saturation transfer current for substrate transistor
+            itss_t  = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1));
+            //Saturation current for c-s diode
+            iscs_t  = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1));
+            //Zero bias hole charge
+            a       = exp(zei*ln(vdei_t/vdei));
+            qp0_t   = qp0*(2.0-a);
+            //Voltage separating ohmic and saturation velocity regime
+            vlim_t  = vlim*exp((zetaci-avs)*ln_qtt0);
+            //Neutral emitter storage time
+            zetatef = zetabet-zetact-0.5;
+            dvg0    = vgb-vge;
+            tef0_t  = tef0*exp(zetatef*ln_qtt0-dvg0/VT*(qtt0-1));
+        end
+
+        //GICCR prefactor
+        c10_t   = c10*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1));
+
+        // Low-field internal collector resistance
+        rci0_t  = rci0*exp(zetaci*ln_qtt0);
+
+        //Voltage separating ohmic and saturation velocity regime
+        //vlim_t  = vlim*exp((zetaci-avs)*ln_qtt0);
+
+        //Internal c-e saturation voltage
+        vces_t  = vces*(1+alces*dT);
+
+
+        //Internal b-c diode saturation current
+        //ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1));
+
+        //Internal b-c junction capacitance
+        `TMPHICJ(cjci0,vdci,zci,vptci,0,vgbc0,cjci0_t,vdci_t,vptci_t)
+
+        //Low-current forward transit time
+        t0_t    = t0*(1+alt0*dT+kt0*dT*dT);
+
+        //Saturation time constant at high current densities
+        thcs_t  = thcs*exp((zetaci-1)*ln_qtt0);
+
+
+        //Avalanche caurrent factors
+        favl_t  = favl*exp(alfav*dT);
+        qavl_t  = qavl*exp(alqav*dT);
+
+        //Zero bias internal base resistance
+        rbi0_t  = rbi0*exp(zetarbi*ln_qtt0);
+
+
+        //Peripheral b-e junction capacitance
+        `TMPHICJ(cjep0,vdep,zep,ajep,1,vgbe0,cjep0_t,vdep_t,ajep_t)
+
+        //Tunneling current factors
+        begin : HICTUN_T
+//            real a_eg,ab,aa;
+            ab      = 1.0;
+            aa      = 1.0;
+            a_eg=vgbe_t0/vgbe_t;
+            if(tunode==1 && cjep0 > 0.0 && vdep >0.0) begin
+                ab      = (cjep0_t/cjep0)*sqrt(a_eg)*vdep_t*vdep_t/(vdep*vdep);
+                aa      = (vdep/vdep_t)*(cjep0/cjep0_t)*pow(a_eg,-1.5);
+            end else if (tunode==0 && cjei0 > 0.0 && vdei >0.0) begin
+                ab      = (cjei0_t/cjei0)*sqrt(a_eg)*vdei_t*vdei_t/(vdei*vdei);
+                aa      = (vdei/vdei_t)*(cjei0/cjei0_t)*pow(a_eg,-1.5);
+            end
+            ibets_t = ibets*ab;
+            abet_t  = abet*aa;
+        end
+
+
+        //Temperature mapping for tunneling current is done inside HICTUN
+
+        `TMPHICJ(1.0,vdcx,zcx,vptcx,0,vgbc0,cratio_t,vdcx_t,vptcx_t)
+        cjcx01_t=cratio_t*cjcx01;
+        cjcx02_t=cratio_t*cjcx02;
+
+
+        //External b-c diode saturation currents
+        //ibcxs_t       = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1));
+
+
+        //Constant external series resistances
+        rcx_t   = rcx*exp(zetarcx*ln_qtt0);
+        rbx_t   = rbx*exp(zetarbx*ln_qtt0);
+        re_t    = re*exp(zetare*ln_qtt0);
+
+        //Forward transit time in substrate transistor
+        tsf_t   = tsf*exp((zetacx-1.0)*ln_qtt0);
+
+        //Capacitance for c-s junction
+        `TMPHICJ(cjs0,vds,zs,vpts,0,vgsc0,cjs0_t,vds_t,vpts_t)
+
+    end // of Thermal_update_without_self_heating
+
+end     //of Model_initialization
+
+if (flsh!=0 && rth >= `MIN_R) begin : Thermal_update_with_self_heating
+    Tdev    = Tamb+dt+V(br_sht);
+    // Limit temperature to avoid FPEs in equations
+    if(Tdev < `TMIN + 273.15) begin
+        Tdev = `TMIN + 273.15;
+    end else begin
+        if (Tdev > `TMAX + 273.15) begin
+            Tdev = `TMAX + 273.15;
+        end
+    end
+    VT      = `P_K*Tdev /`P_Q;
+    dT      = Tdev-Tnom;
+    qtt0    = Tdev/Tnom;
+    ln_qtt0 = ln(qtt0);
+    k1      = f1vg*Tdev*ln(Tdev);
+    k2      = f2vg*Tdev;
+    vgb_t   = vgb+k1+k2;
+    vge_t   = vge+k1+k2;
+    vgbe_t  = (vgb_t+vge_t)/2;
+
+    //Internal b-e junction capacitance
+    `TMPHICJ(cjei0,vdei,zei,ajei,1,vgbe0,cjei0_t,vdei_t,ajei_t)
+
+    if (flcomp == 0.0 || flcomp == 2.1) begin
+        V_gT     = 3.0*VT*ln_qtt0 + vgb*(qtt0-1.0);
+        r_VgVT   = V_gT/VT;
+        //Internal b-e diode saturation currents
+        a        = mcf*r_VgVT/mbei - alb*dT;
+        ibeis_t  = ibeis*exp(a);
+        a        = mcf*r_VgVT/mrei - alb*dT;
+        ireis_t  = ireis*exp(a);
+        a        = mcf*r_VgVT/mbep - alb*dT;
+        //Peripheral b-e diode saturation currents
+        ibeps_t  = ibeps*exp(a);
+        a        = mcf*r_VgVT/mrep - alb*dT;
+        ireps_t  = ireps*exp(a);
+        //Internal b-c diode saturation current
+        a       = r_VgVT/mbci;
+        ibcis_t = ibcis*exp(a);
+        //External b-c diode saturation currents
+        a       = r_VgVT/mbcx;
+        ibcxs_t = ibcxs*exp(a);
+        //Saturation transfer current for substrate transistor
+        a       = r_VgVT/msf;
+        itss_t  = itss*exp(a);
+        //Saturation current for c-s diode
+        a       = r_VgVT/msc;
+        iscs_t  = iscs*exp(a);
+        //Zero bias hole charge
+        a        = vdei_t/vdei;
+        qp0_t    = qp0*(1.0+0.5*zei*(1.0-a));
+        //Voltage separating ohmic and saturation velocity regime
+        a = vlim*(1.0-alvs*dT)*exp(zetaci*ln_qtt0);
+        k = (a-VT)/VT;
+        if (k < `LN_EXP_LIMIT) begin
+            vlim_t = VT + VT*ln(1.0+exp(k));
+        end else begin
+            vlim_t = a;
+        end
+        //Neutral emitter storage time
+        a        = 1.0+alb*dT;
+        k        = 0.5*(a+sqrt(a*a+0.01));
+        tef0_t   = tef0*qtt0/k;
+    end else begin
+        //Internal b-e diode saturation currents
+        ibeis_t  = ibeis*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1));
+        ireis_t  = ireis*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1));
+        //Peripheral b-e diode saturation currents
+        ibeps_t  = ibeps*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1));
+        ireps_t  = ireps*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1));
+        //Internal b-c diode saturation currents
+        ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1));
+        //External b-c diode saturation currents
+        ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1));
+        //Saturation transfer current for substrate transistor
+        itss_t  = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1));
+        //Saturation current for c-s diode
+        iscs_t  = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1));
+        //Zero bias hole charge
+        a       = exp(zei*ln(vdei_t/vdei));
+        qp0_t   = qp0*(2.0-a);
+        //Voltage separating ohmic and saturation velocity regime
+        vlim_t  = vlim*exp((zetaci-avs)*ln_qtt0);
+        //Neutral emitter storage time
+        zetatef = zetabet-zetact-0.5;
+        dvg0    = vgb-vge;
+        tef0_t  = tef0*exp(zetatef*ln_qtt0-dvg0/VT*(qtt0-1));
+    end
+
+    //GICCR prefactor
+    c10_t   = c10*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1));
+
+    // Low-field internal collector resistance
+    rci0_t  = rci0*exp(zetaci*ln_qtt0);
+
+    //Voltage separating ohmic and saturation velocity regime
+    //vlim_t  = vlim*exp((zetaci-avs)*ln_qtt0);
+
+    //Internal c-e saturation voltage
+    vces_t  = vces*(1+alces*dT);
+
+
+    //Internal b-c diode saturation current
+    //ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1));
+
+    //Internal b-c junction capacitance
+    `TMPHICJ(cjci0,vdci,zci,vptci,0,vgbc0,cjci0_t,vdci_t,vptci_t)
+
+    //Low-current forward transit time
+    t0_t    = t0*(1+alt0*dT+kt0*dT*dT);
+
+    //Saturation time constant at high current densities
+    thcs_t  = thcs*exp((zetaci-1)*ln_qtt0);
+
+
+    //Avalanche caurrent factors
+    favl_t  = favl*exp(alfav*dT);
+    qavl_t  = qavl*exp(alqav*dT);
+
+    //Zero bias internal base resistance
+    rbi0_t  = rbi0*exp(zetarbi*ln_qtt0);
+
+
+    //Peripheral b-e junction capacitance
+    `TMPHICJ(cjep0,vdep,zep,ajep,1,vgbe0,cjep0_t,vdep_t,ajep_t)
+
+    //Tunneling current factors
+    if (V(br_bpei) < 0.0 || V(br_biei) < 0.0) begin : HICTUN_T
+//        real a_eg,ab,aa;
+        ab      = 1.0;
+        aa      = 1.0;
+        a_eg=vgbe_t0/vgbe_t;
+        if(tunode==1 && cjep0 > 0.0 && vdep >0.0) begin
+            ab      = (cjep0_t/cjep0)*sqrt(a_eg)*vdep_t*vdep_t/(vdep*vdep);
+            aa      = (vdep/vdep_t)*(cjep0/cjep0_t)*pow(a_eg,-1.5);
+        end else if (tunode==0 && cjei0 > 0.0 && vdei >0.0) begin
+            ab      = (cjei0_t/cjei0)*sqrt(a_eg)*vdei_t*vdei_t/(vdei*vdei);
+            aa      = (vdei/vdei_t)*(cjei0/cjei0_t)*pow(a_eg,-1.5);
+        end
+        ibets_t = ibets*ab;
+        abet_t  = abet*aa;
+    end
+
+
+    //Temperature mapping for tunneling current is done inside HICTUN
+
+    `TMPHICJ(1.0,vdcx,zcx,vptcx,0,vgbc0,cratio_t,vdcx_t,vptcx_t)
+    cjcx01_t=cratio_t*cjcx01;
+    cjcx02_t=cratio_t*cjcx02;
+
+
+    //External b-c diode saturation currents
+    //ibcxs_t       = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1));
+
+
+    //Constant external series resistances
+    rcx_t   = rcx*exp(zetarcx*ln_qtt0);
+    rbx_t   = rbx*exp(zetarbx*ln_qtt0);
+    re_t    = re*exp(zetare*ln_qtt0);
+
+    //Forward transit time in substrate transistor
+    tsf_t   = tsf*exp((zetacx-1.0)*ln_qtt0);
+
+    //Capacitance for c-s junction
+    `TMPHICJ(cjs0,vds,zs,vpts,0,vgsc0,cjs0_t,vds_t,vpts_t)
+
+end     //of Thermal_update_with_self_heating
+
+
+begin : Model_evaluation
+
+    //Intrinsic transistor
+    //Internal base currents across b-e junction
+    `HICDIO(ibeis,ibeis_t,mbei,V(br_biei),ibei)
+    `HICDIO(ireis,ireis_t,mrei,V(br_biei),irei)
+
+    //HICCR: begin
+
+    //Inverse of low-field internal collector resistance: needed in HICICK
+    Orci0_t = 1.0/rci0_t;
+
+    //Initialization
+    //Transfer current, minority charges and transit times
+
+    Tr      = tr;
+    VT_f    = mcf*VT;
+    i_0f    = c10_t * limexp(V(br_biei)/VT_f);
+    i_0r    = c10_t * limexp(V(br_bici)/VT);
+
+    //Internal b-e and b-c junction capacitances and charges
+    //`QJMODF(cjei0_t,vdei_t,zei,ajei_t,V(br_biei),Qjei)
+    //Cjei    = ddx(Qjei,V(bi));
+    `QJMODF(cjei0_t,vdei_t,zei,ajei_t,V(br_biei),Cjei,Qjei)
+
+    //`HICJQ(cjci0_t,vdci_t,zci,vptci_t,V(br_bici),Qjci)
+    //Cjci    = ddx(Qjci,V(bi));
+    `HICJQ(cjci0_t,vdci_t,zci,vptci_t,V(br_bici),Cjci,Qjci)
+
+    //Hole charge at low bias
+    a_bpt   = 0.05;
+    Q_0     = qp0_t + hjei*Qjei + hjci*Qjci;
+    Q_bpt   = a_bpt*qp0_t;
+    b_q     = Q_0/Q_bpt-1;
+    Q_0     = Q_bpt*(1+(b_q +sqrt(b_q*b_q+1.921812))/2);
+
+    //Transit time calculation at low current density
+    if(cjci0_t > 0.0) begin : CJMODF
+//        real cV_f,cv_e,cs_q,cs_q2,cv_j,cdvj_dv;
+        cV_f    = vdci_t*(1.0-exp(-ln(2.4)/zci));
+        cv_e    = (cV_f-V(br_bici))/VT;
+        cs_q    = sqrt(cv_e*cv_e+1.921812);
+        cs_q2   = (cv_e+cs_q)*0.5;
+        cv_j    = cV_f-VT*cs_q2;
+        cdvj_dv = cs_q2/cs_q;
+        Cjcit   = cjci0_t*exp(-zci*ln(1.0-cv_j/vdci_t))*cdvj_dv+2.4*cjci0_t*(1.0-cdvj_dv);
+    end else begin
+        Cjcit   = 0.0;
+    end
+    if(Cjcit > 0.0) begin
+        cc      = cjci0_t/Cjcit;
+    end else begin
+        cc      = 1.0;
+    end
+    T_f0    = t0_t+dt0h*(cc-1.0)+tbvl*(1/cc-1.0);
+
+    //Effective collector voltage
+    vc      = V(br_ciei)-vces_t;
+
+    //Critical current for onset of high-current effects
+    begin : HICICK
+        Ovpt    = 1.0/vpt;
+        a       = vc/VT;
+        d1      = a-1;
+        vceff   = (1.0+((d1+sqrt(d1*d1+1.921812))/2))*VT;
+        a       = vceff/vlim_t;
+        ick     = vceff*Orci0_t/sqrt(1.0+a*a);
+        ICKa    = (vceff-vlim_t)*Ovpt;
+        ick     = ick*(1.0+0.5*(ICKa+sqrt(ICKa*ICKa+1.0e-3)));
+    end
+
+    //Initial formulation of forward and reverse component of transfer current
+    Q_p     = Q_0;
+    if (T_f0 > 0.0 || Tr > 0.0) begin
+        A       = 0.5*Q_0;
+        Q_p     = A+sqrt(A*A+T_f0*i_0f+Tr*i_0r);
+    end
+    I_Tf1   =i_0f/Q_p;
+    a_h     = Oich*I_Tf1;
+    itf     = I_Tf1*(1.0+a_h);
+    itr     = i_0r/Q_p;
+
+    //Initial formulation of forward transit time, diffusion, GICCR and excess b-c charge
+    Q_bf    = 0.0;
+    Tf      = T_f0;
+    Qf      = T_f0*itf;
+    `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf)
+
+    //Initial formulation of reverse diffusion charge
+    Qr      = Tr*itr;
+
+    //Preparation for iteration to get total hole charge and related variables
+    l_it    = 0;
+    if(Qf > `RTOLC*Q_p || a_h > `RTOLC) begin
+        //Iteration for Q_pT is required for improved initial solution
+        Qf      = sqrt(T_f0*itf*Q_fT);
+        Q_pT    = Q_0+Qf+Qr;
+        d_Q     = Q_pT;
+        while (abs(d_Q) >= `RTOLC*abs(Q_pT) && l_it <= `l_itmax) begin
+            d_Q0    = d_Q;
+            I_Tf1   = i_0f/Q_pT;
+            a_h     = Oich*I_Tf1;
+            itf     = I_Tf1*(1.0+a_h);
+            itr     = i_0r/Q_pT;
+            Tf      = T_f0;
+            Qf      = T_f0*itf;
+            `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf)
+            Qr      = Tr*itr;
+            if(Oich == 0.0) begin
+                a       = 1.0+(T_fT*itf+Qr)/Q_pT;
+            end else begin
+                a       = 1.0+(T_fT*I_Tf1*(1.0+2.0*a_h)+Qr)/Q_pT;
+            end
+            d_Q     = -(Q_pT-(Q_0+Q_fT+Qr))/a;
+            //Limit maximum change of Q_pT
+            a       = abs(0.3*Q_pT);
+            if(abs(d_Q) > a) begin
+                if (d_Q>=0) begin
+                    d_Q     = a;
+                end else begin
+                    d_Q     = -a;
+                end
+            end
+            Q_pT    = Q_pT+d_Q;
+            l_it    = l_it+1;
+        end //while
+
+        I_Tf1   = i_0f/Q_pT;
+        a_h     = Oich*I_Tf1;
+        itf     = I_Tf1*(1.0+a_h);
+        itr     = i_0r/Q_pT;
+
+        //Final transit times, charges and transport current components
+        Tf      = T_f0;
+        Qf      = T_f0*itf;
+        `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf)
+        Qr      = Tr*itr;
+
+    end //if
+
+    //NQS effect implemented with LCR networks
+    //Once the delay in ITF is considered, IT_NQS is calculated afterwards
+
+    it      = itf-itr;
+
+    //Diffusion charges for further use
+    Qdei    = Qf;
+    Qdci    = Qr;
+
+
+    //High-frequency emitter current crowding (lateral NQS)
+    Cdei    = -1*ddx(Qdei,V(ei));
+    Cdci    = -1*ddx(Qdci,V(ci));
+    Crbi    = fcrbi*(Cjei+Cjci+Cdei+Cdci);
+    qrbi    = Crbi*V(br_bpbi_v);
+
+//    qrbi	= fcrbi*(Qjei+Qjci+Qdei+Qdci);
+
+    //HICCR: end
+
+    //Internal base current across b-c junction
+    `HICDIO(ibcis,ibcis_t,mbci,V(br_bici),ibci)
+
+    //Avalanche current
+    if((V(br_bici) < 0.0) && (favl_t > 0.0) && (cjci0_t > 0.0)) begin : HICAVL
+//        real v_bord,v_q,U0,av,avl;
+        v_bord  = vdci_t-V(br_bici);
+        v_q     = qavl_t/Cjci;
+        U0      = qavl_t/cjci0_t;
+        if(v_bord > U0) begin
+                av      = favl_t*exp(-v_q/U0);
+                avl     = av*(U0+(1.0+v_q/U0)*(v_bord-U0));
+        end else begin
+            avl     = favl_t*v_bord*exp(-v_q/v_bord);
+        end
+        iavl    = itf*avl;
+    end else begin
+        iavl    = 0.0;
+    end
+
+    //Excess base current from recombination at the b-c barrier
+    ibh_rec = Q_bf*Otbhrec;
+
+    //Internal base resistance
+    if(rbi0_t > 0.0) begin : HICRBI
+//        real Qz_nom,f_QR,ETA,Qz0,fQz;
+        // Consideration of conductivity modulation
+        // To avoid convergence problem hyperbolic smoothing used
+        f_QR    = (1+fdqr0)*qp0_t;
+        Qz0     = Qjei+Qjci+Qf;
+        Qz_nom  = 1+Qz0/f_QR;
+        fQz     = 0.5*(Qz_nom+sqrt(Qz_nom*Qz_nom+0.01));
+        rbi     = rbi0_t/fQz;
+        // Consideration of emitter current crowding
+        if( ibei > 0.0) begin
+            ETA     = rbi*ibei*fgeo/VT;
+            if(ETA < 1.0e-6) begin
+                rbi     = rbi*(1.0-0.5*ETA);
+            end else begin
+                rbi     = rbi*ln(1.0+ETA)/ETA;
+            end
+        end
+        // Consideration of peripheral charge
+        if(Qf > 0.0) begin
+            rbi     = rbi*(Qjei+Qf*fqi)/(Qjei+Qf);
+        end
+    end else begin
+        rbi     = 0.0;
+    end
+
+    //Base currents across peripheral b-e junction
+    `HICDIO(ibeps,ibeps_t,mbep,V(br_bpei),ibep)
+    `HICDIO(ireps,ireps_t,mrep,V(br_bpei),irep)
+
+    //Peripheral b-e junction capacitance and charge
+    `QJMODF(cjep0_t,vdep_t,zep,ajep_t,V(br_bpei),Cjep,Qjep)
+
+    //Tunelling current
+    if (V(br_bpei) <0.0 || V(br_biei) < 0.0) begin : HICTUN
+//        real pocce,czz;
+        if(tunode==1 && cjep0_t > 0.0 && vdep_t >0.0) begin
+            pocce   = exp((1-1/zep)*ln(Cjep/cjep0_t));
+            czz     = -(V(br_bpei)/vdep_t)*ibets_t*pocce;
+            ibet    = czz*exp(-abet_t/pocce);
+            end else if (tunode==0 && cjei0_t > 0.0 && vdei_t >0.0) begin
+                pocce   = exp((1-1/zei)*ln(Cjei/cjei0_t));
+                czz     = -(V(br_biei)/vdei_t)*ibets_t*pocce;
+                ibet    = czz*exp(-abet_t/pocce);
+            end else begin
+            ibet    = 0.0;
+        end
+    end else begin
+        ibet    = 0.0;
+    end
+
+
+    //Depletion capacitance and charge at peripheral b-c junction (bp,ci)
+    `HICJQ(cjcx02_t,vdcx_t,zcx,vptcx_t,V(br_bpci),c_dummy,qjcx0_t_ii)
+
+    //Base currents across peripheral b-c junction (bp,ci)
+    `HICDIO(ibcxs,ibcxs_t,mbcx,V(br_bpci),ijbcx)
+
+    //Depletion capacitance and charge at external b-c junction (b,ci)
+    `HICJQ(cjcx01_t,vdcx_t,zcx,vptcx_t,V(br_bci),c_dummy,qjcx0_t_i)
+
+    //Depletion substrate capacitance and charge at s-c junction (si,ci)
+    `HICJQ(cjs0_t,vds_t,zs,vpts_t,V(br_sici),c_dummy,Qjs)
+
+    //Parasitic substrate transistor transfer current and diffusion charge
+    if(itss > 0.0) begin : Sub_Transfer
+        HSUM    = msf*VT;
+        HSa     = limexp(V(br_bpci)/HSUM);
+        HSb     = limexp(V(br_sici)/HSUM);
+        HSI_Tsu = itss_t*(HSa-HSb);
+        if(tsf > 0.0) begin
+            Qdsu    = tsf_t*itss_t*HSa;
+        end else begin
+            Qdsu    = 0.0;
+        end
+    end else begin
+        HSI_Tsu = 0.0;
+        Qdsu    = 0.0;
+    end
+
+    // Current gain computation for correlated noise implementation
+    betad=ibei;
+    if (betad > 0.0) begin
+        betadin=betad;
+        betan=it;
+        betadc=betan/betad;
+    end else begin
+        betadc=0.0;
+    end
+
+    //Diode current for s-c junction (si,ci)
+    `HICDIO(iscs,iscs_t,msc,V(br_sici),ijsc)
+
+    //Self-heating calculation
+    if (flsh == 1 && rth >= `MIN_R) begin
+        pterm   =  V(br_ciei)*it + (vdci_t-V(br_bici))*iavl;
+    end else if (flsh == 2 && rth >= `MIN_R) begin
+        pterm   =  V(br_ciei)*it + (vdci_t-V(br_bici))*iavl + ibei*V(br_biei) + ibci*V(br_bici) + ibep*V(br_bpei) + ijbcx*V(br_bpci) + ijsc*V(br_sici);
+        if (rbi >= `MIN_R) begin
+            pterm   = pterm + V(br_bpbi_i)*V(br_bpbi_i)/rbi;
+        end
+        if (re_t >= `MIN_R) begin
+            pterm   = pterm + V(br_eie_i)*V(br_eie_i)/re_t;
+        end
+        if (rcx_t >= `MIN_R) begin
+            pterm   = pterm + V(br_cic_i)*V(br_cic_i)/rcx_t;
+        end
+        if (rbx_t >= `MIN_R) begin
+            pterm   = pterm + V(br_bbp_i)*V(br_bbp_i)/rbx_t;
+        end
+    end
+
+    Itxf	= itf;
+    Qdeix	= Qdei;
+    // Excess Phase calculation
+
+    if (flnqs != 0 && Tf != 0) begin
+        Vxf1	= V(br_bxf1);
+        Vxf2	= V(br_bxf2);
+
+        Ixf1	=  (Vxf2-itf)/Tf*t0;
+        Ixf2	=  (Vxf2-Vxf1)/Tf*t0;
+        Qxf1	=  alit*Vxf1*t0;
+        Qxf2	=  alit*Vxf2/3*t0;
+        Itxf	=  Vxf2;
+
+        Vxf	= V(br_bxf);               //for RC nw
+        fact  = t0/Tf;                 //for RC nw  
+        Ixf   = (Vxf - Qdei)*fact;     //for RC nw
+        Qxf   = alqf*Vxf*t0;           //for RC nw
+        Qdeix = Vxf;                   //for RC nw
+    end else begin
+        Ixf1	=  V(br_bxf1);
+        Ixf2	=  V(br_bxf2);
+        Qxf1	=  0;
+        Qxf2	=  0;
+
+        Ixf   = V(br_bxf);     
+        Qxf   = 0;
+    end
+
+end     //of Model_evaluation
+
+begin : Load_sources
+
+    I(br_biei)      <+ _circuit_gmin*V(br_biei);
+    I(br_bici)      <+ _circuit_gmin*V(br_bici);
+
+    I(br_bci)       <+ ddt(qjcx0_t_i);
+    I(br_bci)       <+ ddt(cbcpar1*V(br_bci));
+    I(br_bpci)      <+ ddt(cbcpar2*V(br_bpci));
+    if (rbx >= `MIN_R) begin
+        I(br_bbp_i)     <+ V(br_bbp_i)/rbx_t;
+    end else begin
+//        V(br_bbp_v)     <+ 0.0;
+        I(br_bbp_i)     <+ V(br_bbp_i)/`MIN_R;
+    end
+    if(rbi0 >= `MIN_R) begin
+        I(br_bpbi_i)    <+ V(br_bpbi_i)/rbi;
+        I(br_bpbi_i)    <+ ddt(qrbi);
+    end else begin
+//        V(br_bpbi_v)    <+ 0.0;
+        I(br_bpbi_i)    <+ V(br_bpbi_i)/`MIN_R;
+    end
+    if (tunode==1.0) begin
+        I(br_bpei)      <+ -ibet;
+    end else begin
+        I(br_biei)      <+ -ibet;
+    end
+    I(br_bpei)      <+ ibep;
+    I(br_bpei)      <+ irep;
+    I(br_bpei)      <+ ddt(Qjep);
+    I(br_biei)      <+ ibei;
+    I(br_biei)      <+ irei;
+    I(br_biei)      <+ ibh_rec;
+    I(br_biei)      <+ ddt(Qdeix+Qjei);
+    I(br_bpsi)      <+ HSI_Tsu;
+    I(br_bpci)      <+ ijbcx;
+    I(br_bpci)      <+ ddt(qjcx0_t_ii+Qdsu);
+    I(br_be)        <+ ddt(cbepar1*V(br_be));
+    I(br_bpe)       <+ ddt(cbepar2*V(br_bpe));
+    I(br_bici)      <+ ibci-iavl;
+    I(br_bici)      <+ ddt(Qdci+Qjci);
+    I(br_sici)      <+ ijsc;
+    I(br_sici)      <+ ddt(Qjs);
+    I(br_ciei)      <+ Itxf;
+    I(br_eici)      <+ itr;
+    if (rcx >= `MIN_R) begin
+        I(br_cic_i)     <+ V(br_cic_i)/rcx_t;
+    end else begin
+//        V(br_cic_v)     <+ 0.0;
+        I(br_cic_i)     <+ V(br_cic_i)/`MIN_R;
+    end
+    if (re >= `MIN_R) begin
+        I(br_eie_i)     <+ V(br_eie_i)/re_t;
+    end else begin
+//        V(br_eie_v)     <+ 0.0;
+        I(br_eie_i)     <+ V(br_eie_i)/`MIN_R;
+    end
+    if(rsu >= `MIN_R) begin
+        I(br_sis_i)     <+ V(br_sis_i)/rsu;
+        I(br_sis_i)     <+ ddt(csu*V(br_sis_i));
+    end else begin
+//        V(br_sis_v)     <+ 0.0;
+        I(br_sis_i)     <+ V(br_sis_i)/`MIN_R;
+    end
+
+    // Following code is an intermediate solution (if branch contribution is not supported):
+    // ******************************************
+    if(flsh == 0 || rth < `MIN_R) begin
+          I(br_sht)       <+ V(br_sht)/`MIN_R;
+    end else begin
+          I(br_sht)       <+ V(br_sht)/rth-pterm;
+          I(br_sht)       <+ ddt(cth*V(br_sht));
+    end
+
+    // ******************************************
+
+    // For simulators having no problem with V(br_sht) <+ 0.0
+    // with external thermal node, follwing code may be used.
+    // Note that external thermal node should remain accessible
+    // even without self-heating.
+    // ********************************************
+    //if(flsh == 0 || rth < `MIN_R) begin
+    //    V(br_sht)       <+ 0.0;
+    //end else begin
+    //    I(br_sht)       <+ V(br_sht)/rth-pterm;
+    //    I(br_sht)       <+ ddt(cth*V(br_sht));
+    //end
+    // ********************************************
+
+    // NQS effect
+    I(br_bxf1) <+ Ixf1;
+    I(br_cxf1) <+ ddt(Qxf1);
+    I(br_bxf2) <+ Ixf2;
+    I(br_cxf2) <+ ddt(Qxf2);
+
+    I(br_bxf) <+  Ixf;         //for RC nw
+    I(br_cxf) <+  ddt(Qxf);    //for RC nw
+
+end //of Load_sources
+
+
+`NOISE begin : Noise_sources
+
+    //Thermal noise
+    fourkt  = 4.0 * `P_K * Tdev;
+    if(rbx >= `MIN_R) begin
+        I(br_bbp_i)     <+ white_noise(fourkt/rbx_t,    "thermal");
+    end
+    if(rbi0 >= `MIN_R) begin
+        I(br_bpbi_i)    <+ white_noise(fourkt/rbi,      "thermal");
+    end
+    if(rcx >= `MIN_R) begin
+        I(br_cic_i)     <+ white_noise(fourkt/rcx_t,    "thermal");
+    end
+    if(re >= `MIN_R) begin
+        I(br_eie_i)     <+ white_noise(fourkt/re_t,     "thermal");
+    end
+    if(rsu >= `MIN_R) begin
+        I(br_sis_i)     <+ white_noise(fourkt/rsu,      "thermal");
+    end
+
+    //Flicker noise : Fully correlated between the perimeter and internal base-node
+    flicker_Pwr     = kf*pow((ibei+ibep),af);
+    if (cfbe == -1) begin
+        I(br_biei)      <+ flicker_noise(flicker_Pwr,1.0);
+    end else begin
+        I(br_bpei)      <+ flicker_noise(flicker_Pwr,1.0);
+    end
+
+    //Shot noise
+
+    twoq    = 2.0 * `P_Q;
+    //     I(br_ciei)      <+ white_noise(twoq*it,         "shot");
+    I(br_cibi)      <+ white_noise(twoq*iavl,       "shot");
+
+    //     I(br_biei)      <+ white_noise(twoq*ibei,       "shot");
+
+    I(br_bici)      <+ white_noise(twoq*abs(ibci),  "shot");
+
+    I(br_bpei)      <+ white_noise(twoq*ibep,       "shot");
+
+    I(br_bpci)      <+ white_noise(twoq*abs(ijbcx), "shot");
+
+    I(br_sici)      <+ white_noise(twoq*abs(ijsc),  "shot");
+
+    // Code section for correlated noise
+    // Please turn-off this code section by "//" in order to run the code with Spectre
+
+//    I(b_n1)		<+ white_noise(2 * `P_Q * ibei,		"shot");
+//    I(b_n1)		<+ V(b_n1);
+//    I(b_n2) 		<+ white_noise(2 * `P_Q * it,		"shot");
+//    I(b_n2)		<+ V(b_n2);
+//
+//    I(bi,ei) 		<+ V(b_n1); 
+//    I(ci,ei) 		<+ V(b_n2)+ddt((betadc/2)*alit*Tf*alit*Tf*ddt(V(b_n2))); 
+//    I(ci,ei)		<+ betadc*ddt(-(Tf*alit)*V(b_n1));                       
+end     //of Noise_sources
+
+end //analog
+endmodule
diff --git a/src/spicelib/devices/adms/hicum2/admsva/hicum2.va b/src/spicelib/devices/adms/hicum2/admsva/hicum2.va
index 6bb05cd2a..f2cdebf1e 100644
--- a/src/spicelib/devices/adms/hicum2/admsva/hicum2.va
+++ b/src/spicelib/devices/adms/hicum2/admsva/hicum2.va
@@ -1,1658 +1,1658 @@
-//HICUM Level_2 Version_2.24: A Verilog-A Description
-
-//dw 09/10: Modifications for ngspice and adms:
-// backup to ddx for capacitance calculation
-// all V(...) <+ 0.0; are replaced by I(...) < V(...)/`MIN_R;
-// using GMIN from ngspice: _circuit_gmin
-// switch of section for correlated noise (see below)
-// removed obsolete variables S_avl, f_p
-// don't like internal variable declaration
-
-//**************New Implementations*****************
-
-//******************************************************************************
-//This code contains a Verilog-A implementation of Vertical Non-Quasi-Static(NQS) 
-//Effects using adjunct gyrator networks. To turn on this effect please set FLNQS=1. 
-//Although Vertical NQS effects have been taken into account in HICUM from the very 
-//beginning (see original FTN code and built-in v2.1 HICUM model inside most of the 
-//existing circuit simulators) their implementation has been based on Weil's approach. 
-//However, using Verilog, it is presently not possible to implement Weil's approach, 
-//since there does not exist access to previous time-steps of the simulatior. 
-//The nearly available Verilog-A solution reproduces the results of previous 
-//HICUM versions (cf. documentation).
-//******************************************************************************
-
-//******************************************************************************
-// Implementation of noise correlation
-// Please turn-off (by front slash “//”) the noise correlation code section for simulation with Spectre
-//******************************************************************************
-
-// ***************Bug fix and optimization*************
-// 12/09: Elimination of 'ddx' operator for internal capacitance determination
-//        Capacitances will be calculated by Analytical Equations 
-// 10/09: Temperature coefficient (ZETAxyz) range modified to [-10:10]
-// 09/09: VPT ranges modified from [0:inf] to (0:inf]
-// 07/09: DT0H rabge modified from no range to (-inf:inf) 
-// 03/09: Simplified input NQS adjacent circuit (RC network)
-// 04/08: New range has been defined for FDQR0.
-// 11/07: Bugs have been fixed in macro HICFCI and HICQFC
-// 10/06: in @(initial_model), external if-block for HICTUN_T removed
-// 11/06: within HICQFC, minor changes made for LATB<=0.01;
-// also HICFCI and HICFCT are changed accordingly
-// to ensure correct derivatives
-// Upper limit of FGEO parameter was changed to infinity.
-// 12/06: expressions for Cdei and Cdci are corrected not to include
-// Ccdei and Cbdci respectively (used in Crbi expression).
-
-// 01/06: FCdf1_dw assigned expression (missing in v2.21)
-// FCa and FCa1 are found to have same expression: FCa is omitted in those cases
-// FCa1 written instead of FCa in the expression for FCf_ci
-// Thermal node "tnode" set as external
-// zetasct = mg+1-2.5 changed to zetasct = mg-1.5;
-// Code optimization: Temperature dependent parts are moduled in two separate blocks:
-// within @(initial_model) when self-heating is OFF
-// outside @(initial_model) when self-heating is ON
-// 03/06 : Further fix
-// vlim_t,ibcis_t,ibcxs_t,itss_t,iscs_t considered in compatibility block
-// ddt() operators are separated in contribution expressions.
-// FLCOMP parameter is given different values
-// 05/06:
-// all if-else blocks marked with begin-end
-// unused variables deleted
-// all series resistors and RTH are allowed to have a minimum value MIN_R
-// only tunelling current source contribution within if-then-else
-// 06/06: HICRBI deleted and instead the code changed (hyperbolic smoothing in
-// conductivity modulation part) and put in relevant portion of the code.
-// 07/06: ddx() operator used to find out capacitances from charges:
-// QJMODF,QJMOD,HICJQ changed accordingly
-// Lateral NQS effect modified with ddx() operator.
-// HICFCT included for downward compatibility reason.
-// Few macros are taken inside the code: HICICK, HICAVL, HICTUN (more optimized),
-// internal base resistance (Qjci included under conductivity modulation, hyperbolic smoothing used)
-// Gmin added at (bi,ei) and (bi,ci) branches.
-// 08/06: Units added in the parameter descriptions.
-
-// *********************************************************************************
-// 06/06: Comment on NODE COLLAPSING:
-// Presently this verilog code permits a minimum of 1 milli-Ohm resistance for any
-// series resistance as well as for thermal resistance RTH. If any of the resistance
-// values drops below this minimum value, the corresponding nodes are shorted with
-// zero voltage contribution. We want the model compilers/simulators deal this
-// situation in such a manner that the corresponding node is COLLAPSED.
-// We expect that the simulators should permit current contribution statement
-// for any branch with resistance value more than (or equal to) 1 milli-Ohm without
-// any convergence problem. In fact, we wish NOT to have to use a voltage contribution
-// statement in our Verilog code, except as an indication for the model compiler/simulator
-// to interprete a zero branch voltage as NODE-COLLAPSING action.
-// **********************************************************************************
-
-
-//Default simulator: Spectre
-
-`ifdef insideADMS
- `define MODEL @(initial_model)
- `define NOISE @(noise)
- `define ATTR(txt) (*txt*)
-`else
- `define MODEL
- `define NOISE
- `define ATTR(txt)
-`endif
-
-
-`define VPT_thresh      1.0e2
-`define Dexp_lim        80.0
-`define Cexp_lim        80.0
-`define DFa_fj          1.921812
-`define RTOLC           1.0e-5
-`define l_itmax         100
-`define TMAX            326.85
-`define TMIN            -100.0
-`define LN_EXP_LIMIT    11.0
-`define MIN_R           0.001
-//`define Gmin            1.0e-12
-//`define Gmin      $simparam("gmin",1e-12)  //suggested by L.L
-
-//ADS
-//`include "constants.vams"
-//`include "disciplines.vams"
-//`include "compact.vams"
-
-//Spectre
-`include "constants.h"
-`include "discipline.h"
-
-//////////////Explicit Capacitance and Charge Expression///////////////
-
-// DEPLETION CHARGE CALCULATION
-// Hyperbolic smoothing used; no punch-through
-// INPUT:
-//  c_0		: zero-bias capacitance
-//  u_d		: built-in voltage
-//  z		: exponent coefficient
-//  a_j		: control parameter for C peak value at high forward bias
-//  U_cap	: voltage across junction
-// IMPLICIT INPUT:
-//  VT		: thermal voltage
-// OUTPUT:
-//  Qz		: depletion Charge 
-//  C		: depletion capacitance
-`define QJMODF(c_0,u_d,z,a_j,U_cap,C,Qz)\
-    if(c_0 > 0.0) begin\
-        DFV_f	 = u_d*(1.0-exp(-ln(a_j)/z));\
-        DFv_e	 = (DFV_f-U_cap)/VT;\
-        DFs_q	 = sqrt(DFv_e*DFv_e+`DFa_fj);\
-        DFs_q2	 = (DFv_e+DFs_q)*0.5;\
-        DFv_j	 = DFV_f-VT*DFs_q2;\
-        DFdvj_dv = DFs_q2/DFs_q;\
-        DFb	     = ln(1.0-DFv_j/u_d);\
-        DFC_j1   = c_0*exp(-z*DFb)*DFdvj_dv;\
-        C		 = DFC_j1+a_j*c_0*(1.0-DFdvj_dv);\
-        DFQ_j	 = c_0*u_d*(1.0-exp(DFb*(1.0-z)))/(1.0-z);\
-        Qz	     = DFQ_j+a_j*c_0*(U_cap-DFv_j);\
-    end else begin\
-        C        = 0.0;\
-        Qz	     = 0.0;\
-    end
-   
-////////////////////////////////////////////////////////////////
-
-
-//////////////Explicit Capacitance and Charge Expression///////////////
-
-
-// DEPLETION CHARGE CALCULATION CONSIDERING PUNCH THROUGH
-// smoothing of reverse bias region (punch-through) 
-// and limiting to a_j=Cj,max/Cj0 for forward bias.
-// Important for base-collector and collector-substrate junction
-// INPUT:
-//  c_0		: zero-bias capacitance
-//  u_d		: built-in voltage
-//  z 		: exponent coefficient
-//  a_j		: control parameter for C peak value at high forward bias
-//  v_pt	: punch-through voltage (defined as qNw^2/2e)
-//  U_cap	: voltage across junction
-// IMPLICIT INPUT:
-//  VT		: thermal voltage
-// OUTPUT:
-//  Qz		: depletion charge
-//  C		: depletion capacitance
-`define QJMOD(c_0,u_d,z,a_j,v_pt,U_cap,C,Qz)\
-    if(c_0 > 0.0) begin\
-        Dz_r	= z/4.0;\
-        Dv_p	= v_pt-u_d;\
-        DV_f	= u_d*(1.0-exp(-ln(a_j)/z));\
-        DC_max	= a_j*c_0;\
-        DC_c	= c_0*exp((Dz_r-z)*ln(v_pt/u_d));\
-        Dv_e	= (DV_f-U_cap)/VT;\
-        if(Dv_e < `Cexp_lim) begin\
-            De	    = exp(Dv_e);\
-            De_1	= De/(1.0+De);\
-            Dv_j1	= DV_f-VT*ln(1.0+De);\
-        end else begin\
-            De_1	= 1.0;\
-            Dv_j1	= U_cap;\
-        end\
-        Da	    = 0.1*Dv_p+4.0*VT;\
-        Dv_r	= (Dv_p+Dv_j1)/Da;\
-        if(Dv_r < `Cexp_lim) begin\
-            De	    = exp(Dv_r);\
-            De_2	= De/(1.0+De);\
-            Dv_j2	= -Dv_p+Da*ln(1.0+De);\
-        end else begin\
-            De_2	= 1.0;\
-            Dv_j2	= Dv_j1;\
-        end\
-        Dv_j4	= U_cap-Dv_j1;\
-        DCln1	= ln(1.0-Dv_j1/u_d);\
-        DCln2	= ln(1.0-Dv_j2/u_d);\
-        Dz1	    = 1.0-z;\
-        Dzr1	= 1.0-Dz_r;\
-        DC_j1	= c_0*exp(DCln2*(-z))*De_1*De_2;\
-        DC_j2	= DC_c*exp(DCln1*(-Dz_r))*(1.0-De_2);\
-        DC_j3	= DC_max*(1.0-De_1);\
-        C		= DC_j1+DC_j2+DC_j3;\
-        DQ_j1	= c_0*(1.0-exp(DCln2*Dz1))/Dz1;\
-        DQ_j2	= DC_c*(1.0-exp(DCln1*Dzr1))/Dzr1;\
-        DQ_j3	= DC_c*(1.0-exp(DCln2*Dzr1))/Dzr1;\
-        Qz	    = (DQ_j1+DQ_j2-DQ_j3)*u_d+DC_max*Dv_j4;\
-    end else begin\
-        C	    = 0.0;\
-        Qz	    = 0.0;\
-    end
-
-
-// DEPLETION CHARGE & CAPACITANCE CALCULATION SELECTOR
-// Dependent on junction punch-through voltage
-// Important for collector related junctions
-`define HICJQ(c_0,u_d,z,v_pt,U_cap,C,Qz)\
-    if(v_pt < `VPT_thresh) begin\
-        `QJMOD(c_0,u_d,z,2.4,v_pt,U_cap,C,Qz)\
-    end else begin\
-        `QJMODF(c_0,u_d,z,2.4,U_cap,C,Qz)\
-    end
-
-
-// A CALCULATION NEEDED FOR COLLECTOR MINORITY CHARGE FORMULATION
-// INPUT:
-//  zb,zl       : zeta_b and zeta_l (model parameters, TED 10/96)
-//  w           : normalized injection width
-// OUTPUT:
-// hicfcio      : function of equation (2.1.17-10)
-`define HICFCI(zb,zl,w,hicfcio,dhicfcio_dw)\
-    z       = zb*w;\
-    lnzb    = ln(1+zb*w);\
-    if(z > 1.0e-6) begin\
-        x               = 1.0+z;\
-        a               = x*x;\
-        a2              = 0.250*(a*(2.0*lnzb-1.0)+1.0);\
-        a3              = (a*x*(3.0*lnzb-1.0)+1.0)/9.0;\
-        r               = zl/zb;\
-        hicfcio         = ((1.0-r)*a2+r*a3)/zb;\
-        dhicfcio_dw     = ((1.0-r)*x+r*a)*lnzb;\
-    end else begin\
-        a               = z*z;\
-        a2              = 3.0+z-0.25*a+0.10*z*a;\
-        a3              = 2.0*z+0.75*a-0.20*a*z;\
-        hicfcio         = (zb*a2+zl*a3)*w*w/6.0;\
-        dhicfcio_dw     = (1+zl*w)*(1+z)*lnzb;\
-    end
-
-
-// NEEDED TO CALCULATE WEIGHTED ICCR COLLECTOR MINORITY CHARGE
-// INPUT:
-//  z : zeta_b or zeta_l
-//  w : normalized injection width
-// OUTPUT:
-//  hicfcto     : output
-//  dhicfcto_dw : derivative of output wrt w
-`define HICFCT(z,w,hicfcto,dhicfcto_dw)\
-    a = z*w;\
-    lnz = ln(1+z*w);\
-    if (a > 1.0e-6) begin\
-        hicfcto     = (a - lnz)/z;\
-        dhicfcto_dw = a / (1.0 + a);\
-    end else begin\
-        hicfcto     = 0.5 * a * w;\
-        dhicfcto_dw = a;\
-    end
-
-
-// COLLECTOR CURRENT SPREADING CALCULATION
-// collector minority charge incl. 2D/3D current spreading (TED 10/96)
-// INPUT:
-//  Ix                          : forward transport current component (itf)
-//  I_CK                        : critical current
-//  FFT_pcS                     : dependent on fthc and thcs (parameters)
-// IMPLICIT INPUT:
-//  ahc, latl, latb             : model parameters
-//  VT                          : thermal voltage
-// OUTPUT:
-//  Q_fC, Q_CT: actual and ICCR (weighted) hole charge
-//  T_fC, T_cT: actual and ICCR (weighted) transit time
-//  Derivative dfCT_ditf not properly implemented yet
-`define HICQFC(Ix,I_CK,FFT_pcS,Q_fC,Q_CT,T_fC,T_cT)\
-    Q_fC            = FFT_pcS*Ix;\
-    FCa             = 1.0-I_CK/Ix;\
-    FCrt            = sqrt(FCa*FCa+ahc);\
-    FCa_ck          = 1.0-(FCa+FCrt)/(1.0+sqrt(1.0+ahc));\
-    FCdaick_ditf    = (FCa_ck-1.0)*(1-FCa)/(FCrt*Ix);\
-    if(latb > latl) begin\
-        FCz             = latb-latl;\
-        FCxl            = 1.0+latl;\
-        FCxb            = 1.0+latb;\
-        if(latb > 0.01) begin\
-            FCln            = ln(FCxb/FCxl);\
-            FCa1            = exp((FCa_ck-1.0)*FCln);\
-            FCd_a           = 1.0/(latl-FCa1*latb);\
-            FCw             = (FCa1-1.0)*FCd_a;\
-            FCdw_daick      = -FCz*FCa1*FCln*FCd_a*FCd_a;\
-            FCa1            = ln((1.0+latb*FCw)/(1.0+latl*FCw));\
-            FCda1_dw        = latb/(1.0+latb*FCw) - latl/(1.0+latl*FCw);\
-        end else begin\
-            FCf1            = 1.0-FCa_ck;\
-            FCd_a           = 1.0/(1.0+FCa_ck*latb);\
-            FCw             = FCf1*FCd_a;\
-            FCdw_daick      = -1.0*FCd_a*FCd_a*FCxb*FCd_a;\
-            FCa1            = FCz*FCw;\
-            FCda1_dw        = FCz;\
-        end\
-        FCf_CT          = 2.0/FCz;\
-        FCw2            = FCw*FCw;\
-        FCf1            = latb*latl*FCw*FCw2/3.0+(latb+latl)*FCw2/2.0+FCw;\
-        FCdf1_dw        = latb*latl*FCw2 + (latb+latl)*FCw + 1.0;\
-        `HICFCI(latb,latl,FCw,FCf2,FCdf2_dw)\
-        `HICFCI(latl,latb,FCw,FCf3,FCdf3_dw)\
-        FCf_ci          = FCf_CT*(FCa1*FCf1-FCf2+FCf3);\
-        FCdfc_dw        = FCf_CT*(FCa1*FCdf1_dw+FCda1_dw*FCf1-FCdf2_dw+FCdf3_dw);\
-        FCdw_ditf       = FCdw_daick*FCdaick_ditf;\
-        FCdfc_ditf      = FCdfc_dw*FCdw_ditf;\
-        if(flcomp == 0.0 || flcomp == 2.1) begin\
-            `HICFCT(latb,FCw,FCf2,FCdf2_dw)\
-            `HICFCT(latl,FCw,FCf3,FCdf3_dw)\
-            FCf_CT          = FCf_CT*(FCf2-FCf3);\
-            FCdfCT_dw       = FCf_CT*(FCdf2_dw-FCdf3_dw);\
-            FCdfCT_ditf     = FCdfCT_dw*FCdw_ditf;\
-        end else begin\
-            FCf_CT          = FCf_ci;\
-            FCdfCT_ditf     = FCdfc_ditf;\
-        end\
-    end else begin\
-        if(latb > 0.01) begin\
-            FCd_a           = 1.0/(1.0+FCa_ck*latb);\
-            FCw             = (1.0-FCa_ck)*FCd_a;\
-            FCdw_daick      = -(1.0+latb)*FCd_a*FCd_a;\
-        end else begin\
-            FCw             = 1.0-FCa_ck-FCa_ck*latb;\
-            FCdw_daick      = -(1.0+latb);\
-        end\
-        FCw2            = FCw*FCw;\
-        FCz             = latb*FCw;\
-        FCz_1           = 1.0+FCz;\
-        FCd_f           = 1.0/(FCz_1);\
-        FCf_ci          = FCw2*(1.0+FCz/3.0)*FCd_f;\
-        FCdfc_dw        = 2.0*FCw*(FCz_1+FCz*FCz/3.0)*FCd_f*FCd_f;\
-        FCdw_ditf       = FCdw_daick*FCdaick_ditf;\
-        FCdfc_ditf      = FCdfc_dw*FCdw_ditf;\
-        if(flcomp == 0.0 || flcomp == 2.1) begin\
-            if (FCz > 0.001) begin\
-                FCf_CT          = 2.0*(FCz_1*ln(FCz_1)-FCz)/(latb*latb*FCz_1);\
-                FCdfCT_dw       = 2.0*FCw*FCd_f*FCd_f;\
-            end else begin\
-                FCf_CT          = FCw2*(1.0-FCz/3.0)*FCd_f;\
-                FCdfCT_dw       = 2.0*FCw*(1.0-FCz*FCz/3.0)*FCd_f*FCd_f;\
-            end\
-            FCdfCT_ditf     = FCdfCT_dw*FCdw_ditf;\
-        end else begin\
-            FCf_CT          = FCf_ci;\
-            FCdfCT_ditf     = FCdfc_ditf;\
-        end\
-    end\
-    Q_CT    = Q_fC*FCf_CT;\
-    Q_fC    = Q_fC*FCf_ci;\
-    T_fC    = FFT_pcS*(FCf_ci+Ix*FCdfc_ditf);\
-    T_cT    = FFT_pcS*(FCf_CT+Ix*FCdfCT_ditf);
-
-// TRANSIT-TIME AND STORED MINORITY CHARGE
-// INPUT:
-//  itf         : forward transport current
-//  I_CK        : critical current
-//  T_f         : transit time    \
-//  Q_f         : minority charge / for low current
-// IMPLICIT INPUT:
-//  tef0, gtfe, fthc, thcs, ahc, latl, latb     : model parameters
-// OUTPUT:
-//  T_f         : transit time    \
-//  Q_f         : minority charge / transient analysis
-//  T_fT        : transit time    \
-//  Q_fT        : minority charge / ICCR (transfer current)
-//  Q_bf        : excess base charge
-`define HICQFF(itf,I_CK,T_f,Q_f,T_fT,Q_fT,Q_bf)\
-    if(itf < 1.0e-6*I_CK) begin\
-        Q_fT            = Q_f;\
-        T_fT            = T_f;\
-    end else begin\
-        FFa             = I_CK/itf;\
-        FFd_TfE         = tef0_t*exp(-gtfe*ln(FFa));\
-        FFd_QfE         = FFd_TfE*itf/(gtfe+1.0);\
-        FFT_fbS         = (1.0-fthc)*thcs_t;\
-        FFx             = 1.0-FFa;\
-        FFs             = sqrt(FFx*FFx+ahc);\
-        FFw             = (FFx+FFs)/(1.0+sqrt(1.0+ahc));\
-        FFw_2           = FFw*FFw;\
-        FFd_QfB         = FFT_fbS*itf*FFw_2;\
-        Q_bf            = FFd_QfB;\
-        FFa_w           = FFw_2*(1.0+2.0*FFa/FFs);\
-        FFd_TfB         = FFT_fbS*FFa_w;\
-        FFT_pcS         = fthc*thcs_t;\
-        if(latb <= 0.0 && latl <= 0.0) begin\
-            FFQ_fC        = FFT_pcS*itf*FFw_2;\
-            FFT_fC        = FFT_pcS*FFa_w;\
-            FFQ_cT        = FFQ_fC;\
-            FFT_cT        = FFT_fC;\
-        end else begin\
-            `HICQFC(itf,I_CK,FFT_pcS,FFQ_fC,FFQ_cT,FFT_fC,FFT_cT)\
-        end\
-        Q_f             = Q_f+FFd_QfB;\
-        T_f             = T_f+FFd_TfB;\
-        Q_fT            = Q_f+hfe*FFd_QfE+hfc*FFQ_cT;\
-        T_fT            = T_f+hfe*FFd_TfE+hfc*FFT_cT;\
-        Q_f             = Q_f+FFd_QfE+FFQ_fC;\
-        T_f             = T_f+FFd_TfE+FFT_fC;\
-    end
-
-
-
-
-// IDEAL DIODE (WITHOUT CAPACITANCE):
-// conductance calculation not required
-// INPUT:
-//  IS, IST     : saturation currents (model parameter related)
-//  UM1         : ideality factor
-//  U           : branch voltage
-// IMPLICIT INPUT:
-//  VT          : thermal voltage
-// OUTPUT:
-//  Iz          : diode current
-`define HICDIO(IS,IST,UM1,U,Iz)\
-    DIOY    = U/(UM1*VT);\
-    if (IS > 0.0) begin\
-        if (DIOY > `Dexp_lim) begin\
-            le      = (1 + (DIOY - `Dexp_lim));\
-            DIOY    = `Dexp_lim;\
-        end else begin\
-            le      = 1;\
-        end\
-        le      = le*limexp(DIOY);\
-        Iz      = IST*(le-1.0);\
-        if(DIOY <= -14.0) begin\
-            Iz      = -IST;\
-        end\
-    end else begin\
-        Iz      = 0.0;\
-    end
-
-
-
-// TEMPERATURE UPDATE OF JUNCTION CAPACITANCE RELATED PARAMETERS
-// INPUT:
-//  mostly model parameters
-//  x           : zero bias junction capacitance
-//  y           : junction built-in potencial
-//  z           : grading co-efficient
-//  w           : ratio of maximum to zero-bias value of capacitance or punch-through voltage
-//  is_al       : condition factor to check what "w" stands for
-//  vgeff       : band-gap voltage
-// IMPLICIT INPUT:
-//  VT          : thermal voltage
-//  vt0,qtt0,ln_qtt0,mg : other model variables
-// OUTPUT:
-//  c_j_t               : temperature update of "c_j"
-//  vd_t                : temperature update of "vd0"
-//  w_t                 : temperature update of "w"
-`define TMPHICJ(c_j,vd0,z,w,is_al,vgeff,c_j_t,vd_t,w_t)\
-    if (c_j > 0.0) begin\
-        vdj0    = 2*vt0*ln(exp(vd0*0.5/vt0)-exp(-0.5*vd0/vt0));\
-        vdjt    = vdj0*qtt0+vgeff*(1-qtt0)-mg*VT*ln_qtt0;\
-        vdt     = vdjt+2*VT*ln(0.5*(1+sqrt(1+4*exp(-vdjt/VT))));\
-        vd_t    = vdt;\
-        c_j_t   = c_j*exp(z*ln(vd0/vd_t));\
-        if (is_al == 1) begin\
-            w_t = w*vd_t/vd0;\
-        end else begin\
-            w_t = w;\
-        end\
-    end else begin\
-        c_j_t   = c_j;\
-        vd_t    = vd0;\
-        w_t     = w;\
-    end
-
-    
-    
-module hic2_full (c,b,e,s,tnode);
-
-//Node definitions
-
-inout           c,b,e,s,tnode;
-electrical      c,b,e,s,ci,ei,bp,bi,si;
-electrical	xf1,xf2;
-electrical      xf;  //RC nw
-
-electrical      tnode;
-electrical 	    n1,n2;
-
-//Branch definitions
-branch          (b,bp)          br_bbp_i;
-branch          (b,bp)          br_bbp_v;
-branch          (ci,c)          br_cic_i;
-branch          (ci,c)          br_cic_v;
-branch          (ei,e)          br_eie_i;
-branch          (ei,e)          br_eie_v;
-branch          (bp,bi)         br_bpbi_i;
-branch          (bp,bi)         br_bpbi_v;
-branch          (si,s)          br_sis_i;
-branch          (si,s)          br_sis_v;
-branch          (bi,ei)         br_biei;
-branch          (bi,ci)         br_bici;
-branch          (ci,bi)         br_cibi;
-branch          (ci,ei)         br_ciei;
-branch          (ei,ci)         br_eici;
-branch          (bp,e)          br_bpe;
-branch          (b,e)           br_be;
-branch          (bp,ei)         br_bpei;
-branch          (bp,ci)         br_bpci;
-branch          (b,ci)          br_bci;
-branch          (si,ci)         br_sici;
-branch          (bp,si)         br_bpsi;
-branch          (tnode )        br_sht;
-
-//Phase network for ITF
-branch		(xf1 )		br_bxf1;
-branch		(xf1 )		br_cxf1;
-branch		(xf2 )		br_bxf2;
-branch		(xf2 )		br_cxf2;
-
-//Phase network for QF
-
-branch    (xf )     br_bxf;  //for RC nw
-branch    (xf )     br_cxf;  //for RC nw
-
-//Noise
-
-branch 		(n1 ) 	b_n1;
-branch 		(n2 ) 	b_n2;	
-	
-
-
-// -- ###########################################################
-// -- ###########     Parameters initialization  ################
-// -- ###########################################################
-
-
-//Transfer current
-parameter real c10      = 2.0E-30       from [0:1]      `ATTR(info="GICCR constant" unit="A^2s");
-parameter real qp0      = 2.0E-14       from (0:1]      `ATTR(info="Zero-bias hole charge" unit="Coul");
-parameter real ich      = 0.0           from [0:inf)    `ATTR(info="High-current correction for 2D and 3D effects" unit="A"); //`0' signifies infinity
-parameter real hfe      = 1.0           from [0:inf]    `ATTR(info="Emitter minority charge weighting factor in HBTs");
-parameter real hfc      = 1.0           from [0:inf]    `ATTR(info="Collector minority charge weighting factor in HBTs");
-parameter real hjei     = 1.0           from [0:100]    `ATTR(info="B-E depletion charge weighting factor in HBTs");
-parameter real hjci     = 1.0           from [0:100]    `ATTR(info="B-C depletion charge weighting factor in HBTs");
-
-//Base-Emitter diode currents
-parameter real ibeis    = 1.0E-18       from [0:1]      `ATTR(info="Internal B-E saturation current" unit="A");
-parameter real mbei     = 1.0           from (0:10]     `ATTR(info="Internal B-E current ideality factor");
-parameter real ireis    = 0.0           from [0:1]      `ATTR(info="Internal B-E recombination saturation current" unit="A");
-parameter real mrei     = 2.0           from (0:10]     `ATTR(info="Internal B-E recombination current ideality factor");
-parameter real ibeps    = 0.0           from [0:1]      `ATTR(info="Peripheral B-E saturation current" unit="A");
-parameter real mbep     = 1.0           from (0:10]     `ATTR(info="Peripheral B-E current ideality factor");
-parameter real ireps    = 0.0           from [0:1]      `ATTR(info="Peripheral B-E recombination saturation current" unit="A");
-parameter real mrep     = 2.0           from (0:10]     `ATTR(info="Peripheral B-E recombination current ideality factor");
-parameter real mcf      = 1.0           from (0:10]     `ATTR(info="Non-ideality factor for III-V HBTs");
-
-//Transit time for excess recombination current at b-c barrier
-parameter real tbhrec   = 0.0           from [0:inf)    `ATTR(info="Base current recombination time constant at B-C barrier for high forward injection" unit="s");
-
-//Base-Collector diode currents
-parameter real ibcis    = 1.0E-16       from [0:1.0]    `ATTR(info="Internal B-C saturation current" unit="A");
-parameter real mbci     = 1.0           from (0:10]     `ATTR(info="Internal B-C current ideality factor");
-parameter real ibcxs    = 0.0           from [0:1.0]    `ATTR(info="External B-C saturation current" unit="A");
-parameter real mbcx     = 1.0           from (0:10]     `ATTR(info="External B-C current ideality factor");
-
-//Base-Emitter tunneling current
-parameter real ibets    = 0.0           from [0:1]      `ATTR(info="B-E tunneling saturation current" unit="A");
-parameter real abet     = 40            from [0:inf)    `ATTR(info="Exponent factor for tunneling current");
-parameter integer tunode= 1             from [0:1]      `ATTR(info="Specifies the base node connection for the tunneling current"); // =1 signifies perimeter node
-
-//Base-Collector avalanche current
-parameter real favl     = 0.0           from [0:inf)    `ATTR(info="Avalanche current factor" unit="1/V");
-parameter real qavl     = 0.0           from [0:inf)    `ATTR(info="Exponent factor for avalanche current" unit="Coul");
-parameter real alfav    = 0.0                           `ATTR(info="Relative TC for FAVL" unit="1/K");
-parameter real alqav    = 0.0                           `ATTR(info="Relative TC for QAVL" unit="1/K");
-
-//Series resistances
-parameter real rbi0     = 0.0           from [0:inf)    `ATTR(info="Zero bias internal base resistance" unit="Ohm");
-parameter real rbx      = 0.0           from [0:inf)    `ATTR(info="External base series resistance" unit="Ohm");
-parameter real fgeo     = 0.6557        from [0:inf]    `ATTR(info="Factor for geometry dependence of emitter current crowding");
-parameter real fdqr0    = 0.0           from [-0.5:100]    `ATTR(info="Correction factor for modulation by B-E and B-C space charge layer");
-parameter real fcrbi    = 0.0           from [0:1]      `ATTR(info="Ratio of HF shunt to total internal capacitance (lateral NQS effect)");
-parameter real fqi      = 1.0           from [0:1]      `ATTR(info="Ration of internal to total minority charge");
-parameter real re       = 0.0           from [0:inf)    `ATTR(info="Emitter series resistance" unit="Ohm");
-parameter real rcx      = 0.0           from [0:inf)    `ATTR(info="External collector series resistance" unit="Ohm");
-
-//Substrate transistor
-parameter real itss     = 0.0           from [0:1.0]    `ATTR(info="Substrate transistor transfer saturation current" unit="A");
-parameter real msf      = 1.0           from (0:10]     `ATTR(info="Forward ideality factor of substrate transfer current");
-parameter real iscs     = 0.0           from [0:1.0]    `ATTR(info="C-S diode saturation current" unit="A");
-parameter real msc      = 1.0           from (0:10]     `ATTR(info="Ideality factor of C-S diode current");
-parameter real tsf      = 0.0           from [0:inf)    `ATTR(info="Transit time for forward operation of substrate transistor" unit="s");
-
-//Intra-device substrate coupling
-parameter real rsu      = 0.0           from [0:inf)    `ATTR(info="Substrate series resistance" unit="Ohm");
-parameter real csu      = 0.0           from [0:inf)    `ATTR(info="Substrate shunt capacitance" unit="F");
-
-//Depletion Capacitances
-parameter real cjei0    = 1.0E-20       from [0:inf)    `ATTR(info="Internal B-E zero-bias depletion capacitance" unit="F");
-parameter real vdei     = 0.9           from (0:10]     `ATTR(info="Internal B-E built-in potential" unit="V");
-parameter real zei      = 0.5	          from (0:1]      `ATTR(info="Internal B-E grading coefficient");
-parameter real ajei     = 2.5           from [1:inf)    `ATTR(info="Ratio of maximum to zero-bias value of internal B-E capacitance");
-parameter real cjep0    = 1.0E-20       from [0:inf)    `ATTR(info="Peripheral B-E zero-bias depletion capacitance" unit="F");
-parameter real vdep     = 0.9           from (0:10]     `ATTR(info="Peripheral B-E built-in potential" unit="V");
-parameter real zep      = 0.5           from (0:1]      `ATTR(info="Peripheral B-E grading coefficient");
-parameter real ajep     = 2.5           from [1:inf)    `ATTR(info="Ratio of maximum to zero-bias value of peripheral B-E capacitance");
-parameter real cjci0    = 1.0E-20       from [0:inf)    `ATTR(info="Internal B-C zero-bias depletion capacitance" unit="F");
-parameter real vdci     = 0.7           from (0:10]     `ATTR(info="Internal B-C built-in potential" unit="V");
-parameter real zci      = 0.4           from (0:1]      `ATTR(info="Internal B-C grading coefficient");
-parameter real vptci    = 100           from (0:100]    `ATTR(info="Internal B-C punch-through voltage" unit="V");
-parameter real cjcx0    = 1.0E-20       from [0:inf)    `ATTR(info="External B-C zero-bias depletion capacitance" unit="F");
-parameter real vdcx     = 0.7           from (0:10]     `ATTR(info="External B-C built-in potential" unit="V");
-parameter real zcx      = 0.4           from (0:1]      `ATTR(info="External B-C grading coefficient");
-parameter real vptcx    = 100           from (0:100]    `ATTR(info="External B-C punch-through voltage" unit="V");
-parameter real fbcpar   = 0.0           from [0:1]      `ATTR(info="Partitioning factor of parasitic B-C cap");
-parameter real fbepar   = 1.0           from [0:1]      `ATTR(info="Partitioning factor of parasitic B-E cap");
-parameter real cjs0     = 0.0           from [0:inf)    `ATTR(info="C-S zero-bias depletion capacitance" unit="F");
-parameter real vds      = 0.6           from (0:10]     `ATTR(info="C-S built-in potential" unit="V");
-parameter real zs       = 0.5           from (0:1]      `ATTR(info="C-S grading coefficient");
-parameter real vpts     = 100           from (0:100]    `ATTR(info="C-S punch-through voltage" unit="V"); 
-
-//Diffusion Capacitances
-parameter real t0       = 0.0           from [0:inf)    `ATTR(info="Low current forward transit time at VBC=0V" unit="s");
-parameter real dt0h     = 0.0           from (-inf:inf) `ATTR(info="Time constant for base and B-C space charge layer width modulation" unit="s");
-parameter real tbvl     = 0.0           from [0:inf)    `ATTR(info="Time constant for modelling carrier jam at low VCE" unit="s");
-parameter real tef0     = 0.0           from [0:inf)    `ATTR(info="Neutral emitter storage time" unit="s");
-parameter real gtfe     = 1.0           from (0:10]     `ATTR(info="Exponent factor for current dependence of neutral emitter storage time");
-parameter real thcs     = 0.0           from [0:inf)    `ATTR(info="Saturation time constant at high current densities" unit="s");
-parameter real ahc      = 0.1           from (0:10]     `ATTR(info="Smoothing factor for current dependence of base and collector transit time");
-parameter real fthc     = 0.0           from [0:1]      `ATTR(info="Partitioning factor for base and collector portion");
-parameter real rci0     = 150           from (0:inf)    `ATTR(info="Internal collector resistance at low electric field" unit="Ohm");
-parameter real vlim     = 0.5           from (0:10]     `ATTR(info="Voltage separating ohmic and saturation velocity regime" unit="V");
-parameter real vces     = 0.1           from [0:1]      `ATTR(info="Internal C-E saturation voltage" unit="V");
-parameter real vpt      = 100.0         from (0:inf]    `ATTR(info="Collector punch-through voltage" unit="V"); // `0' signifies infinity
-parameter real tr       = 0.0           from [0:inf)    `ATTR(info="Storage time for inverse operation" unit="s");
-  
-//Isolation Capacitances
-parameter real cbepar   = 0.0           from [0:inf)    `ATTR(info="Total parasitic B-E capacitance" unit="F");
-parameter real cbcpar   = 0.0           from [0:inf)    `ATTR(info="Total parasitic B-C capacitance" unit="F");
-
-//Non-quasi-static Effect
-parameter real alqf     = 0.0           from [0:1]      `ATTR(info="Factor for additional delay time of minority charge");
-parameter real alit     = 0.0           from [0:1]      `ATTR(info="Factor for additional delay time of transfer current");
-parameter integer flnqs = 0             from [0:1]      `ATTR(info="Flag for turning on and off of vertical NQS effect");
-  
-//Noise
-parameter real kf       = 0.0           from [0:inf)    `ATTR(info="Flicker noise coefficient");
-parameter real af       = 2.0           from (0:10]     `ATTR(info="Flicker noise exponent factor");
-parameter integer cfbe  = -1            from [-2:-1]    `ATTR(info="Flag for determining where to tag the flicker noise source");
-
-
-//Lateral Geometry Scaling (at high current densities)
-parameter real latb     = 0.0           from [0:inf)    `ATTR(info="Scaling factor for collector minority charge in direction of emitter width");
-parameter real latl     = 0.0           from [0:inf)    `ATTR(info="Scaling factor for collector minority charge in direction of emitter length");
-
-//Temperature dependence
-parameter real vgb      = 1.17          from (0:10]     `ATTR(info="Bandgap voltage extrapolated to 0 K" unit="V");
-parameter real alt0     = 0.0                           `ATTR(info="First order relative TC of parameter T0" unit="1/K");
-parameter real kt0      = 0.0                           `ATTR(info="Second order relative TC of parameter T0");
-parameter real zetaci   = 0.0           from [-10:10]   `ATTR(info="Temperature exponent for RCI0");
-parameter real alvs     = 0.0                           `ATTR(info="Relative TC of saturation drift velocity" unit="1/K");
-parameter real alces    = 0.0                           `ATTR(info="Relative TC of VCES" unit="1/K");
-parameter real zetarbi  = 0.0           from [-10:10]   `ATTR(info="Temperature exponent of internal base resistance");
-parameter real zetarbx  = 0.0           from [-10:10]   `ATTR(info="Temperature exponent of external base resistance");
-parameter real zetarcx  = 0.0           from [-10:10]   `ATTR(info="Temperature exponent of external collector resistance");
-parameter real zetare   = 0.0           from [-10:10]   `ATTR(info="Temperature exponent of emitter resistance");
-parameter real zetacx   = 1.0           from [-10:10]   `ATTR(info="Temperature exponent of mobility in substrate transistor transit time");
-parameter real vge      = 1.17          from (0:10]     `ATTR(info="Effective emitter bandgap voltage" unit="V");
-parameter real vgc      = 1.17          from (0:10]     `ATTR(info="Effective collector bandgap voltage" unit="V");
-parameter real vgs      = 1.17          from (0:10]     `ATTR(info="Effective substrate bandgap voltage" unit="V");
-parameter real f1vg     =-1.02377e-4                    `ATTR(info="Coefficient K1 in T-dependent band-gap equation");
-parameter real f2vg     = 4.3215e-4                     `ATTR(info="Coefficient K2 in T-dependent band-gap equation");
-parameter real zetact   = 3.0           from [-10:10]   `ATTR(info="Exponent coefficient in transfer current temperature dependence");
-parameter real zetabet  = 3.5           from [-10:10]   `ATTR(info="Exponent coefficient in B-E junction current temperature dependence");
-parameter real alb      = 0.0                           `ATTR(info="Relative TC of forward current gain for V2.1 model" unit="1/K");
-
-//Self-Heating
-parameter integer flsh  = 0             from [0:2]      `ATTR(info="Flag for turning on and off self-heating effect");
-parameter real rth      = 0.0           from [0:inf)    `ATTR(info="Thermal resistance" unit="K/W");
-parameter real cth      = 0.0           from [0:inf)    `ATTR(info="Thermal capacitance" unit="J/W");
-
-//Compatibility with V2.1
-parameter real flcomp = 0.0             from [0:inf)    `ATTR(info="Flag for compatibility with v2.1 model (0=v2.1)");
-
-//Circuit simulator specific parameters
-parameter real tnom     = 27.0                          `ATTR(info="Temperature at which parameters are specified" unit="C");
-parameter real dt       = 0.0                           `ATTR(info="Temperature change w.r.t. chip temperature for particular transistor" unit="K");
-
-
-//
-//======================== Transistor model formulation ===================
-//
-
-    //Declaration of variables
-
-    real _circuit_gmin;
-
-    //Temperature and drift
-    real VT,Tdev,qtt0,ln_qtt0,r_VgVT,V_gT,dT,k;
-    real ireis_t,ibeis_t,ibcxs_t,ibcis_t,iscs_t,cjci0_t;
-    real cjs0_t,rci0_t,vlim_t,vces_t,thcs_t,tef0_t,rbi0_t;
-    real rbx_t,rcx_t,re_t,t0_t,vdei_t,vdci_t,vpts_t,itss_t,tsf_t;
-    real c10_t,cjei0_t,qp0_t,vdcx_t,vptcx_t,cjcx01_t,cjcx02_t;
-    real qjcx0_t_i,qjcx0_t_ii,cratio_t,c_dummy;
-    real ibeps_t,ireps_t,cjep0_t;
-    real ajei_t,qavl_t,favl_t,ibets_t,abet_t,vptci_t,vdep_t,ajep_t,zetatef;
-    real k1,k2,dvg0,vge_t,vgb_t,vgbe_t,vds_t,vt0,Tnom,Tamb,a,avs;
-    real zetabci,zetabcxt,zetasct,vgbe0,mg,vgb_t0,vge_t0,vgbe_t0,vgbc0,vgsc0;
-    real cbcpar1,cbcpar2,cbepar2,cbepar1,Oich,Ovpt,Otbhrec;
-
-    //Charges, capacitances and currents
-    real Qjci,Qjei,Qjep;
-    real it,ibei,irei,ibci,ibep,irep,ibh_rec;
-    real Qdei,Qdci,qrbi;
-    real ibet,iavl;
-    real ijbcx,ijsc,Qjs,HSUM,HSI_Tsu,Qdsu;
-
-    //Base resistance and self-heating power
-    real rbi,pterm;
-
-    //Variables for macro TMPHICJ
-    real  vdj0,vdjt,vdt;
-
-    //Model initialization
-    real k10,k20,C_1;
-
-    //Model evaluation
-    real Cjci,Cjcit,cc,Cjei,Cjep;
-    real itf,itr,Tf,Tr,VT_f,i_0f,i_0r,a_bpt,Q_0,Q_p,Q_bpt;
-    real Orci0_t,b_q,Q_fC,T_fC,T_cT,I_Tf1,T_f0,Q_fT,T_fT,Q_bf;
-    real ICKa,d1;
-    real A,a_h,Q_pT,d_Q,d_Q0;
-    real Qf,Cdei,Qr,Cdci,Crbi;
-    real ick,vc,vceff,cjcx01,cjcx02,HSa,HSb;
-    integer l_it;
-
-    //Variables for macros
-    real  DIOY,le;//HICDIO
-    real  FFT_fbS,FFa,FFx,FFs,FFw,FFw_2,FFd_QfB,FFd_TfB,FFT_pcS,FFQ_fC,FFT_fC,FFQ_cT,FFT_cT,FFd_TfE,FFd_QfE,FFa_w;//HICQFF
-    real  FCz,FCw2,FCf1,FCf2,FCf3,FCf_ci,FCz_1,FCa1,FCa_ck,FCxl,FCxb;//HICQFC
-    real  FCd_a,FCdaick_ditf,FCa,FCw,FCdw_daick,FCdfc_dw,FCdw_ditf,FCdfc_ditf,FCf_CT,FCdfCT_ditf,FCrt,FCln,lnz,FCda1_dw,FCdf1_dw,FCdf2_dw,FCdf3_dw,FCd_f,FCdfCT_dw;//HICQFC
-    real  Dz_r,Dv_p,DV_f,DC_max,DC_c,Da,Dv_e,De,De_1,Dv_j1,Dv_r,De_2,Dv_j2,Dv_j4,DQ_j1,DQ_j2,DQ_j3,DCln1,DCln2,Dz1,Dzr1,DC_j1,DC_j2,DC_j3;//QJMOD
-    real  DFV_f,DFv_e,DFv_j,DFb,DFQ_j,DFs_q,DFs_q2,DFdvj_dv,DFC_j1;//QJMODF
-    real  z,a2,a3,r,x;//HICFCI
-    real zb,zl,lnzb,w,hicfcio,dhicfcio_dw; //HICFCT
-
-    //Noise
-    real fourkt,twoq,flicker_Pwr;
-    real thermal_Rbx,thermal_Rbi,thermal_Rcx,thermal_Re,betad,betan,betadin,betadc,icn,icn1,icn2;
-
-    //NQS
-    real Ixf1,Ixf2,Qxf1,Qxf2,Vxf1,Vxf2,Itxf,TD1,Qdeix;
-    real T, Vxf, Ixf, Qxf,fact;
-
-    real pocce,czz;
-    real Qz_nom,f_QR,ETA,Qz0,fQz;
-    real v_bord,v_q,U0,av,avl;
-    real cV_f,cv_e,cs_q,cs_q2,cv_j,cdvj_dv;
-    real a_eg,ab,aa;
-
-    //end of variables
-
-analog begin
-
-`MODEL begin : Model_initialization
-
-    Tnom    = tnom+`P_CELSIUS0;
-    Tamb    = $temperature;
-    vt0     = `P_K*Tnom /`P_Q;
-    k10     = f1vg*Tnom*ln(Tnom);
-    k20     = f2vg*Tnom;
-    avs     = alvs*Tnom;
-    vgb_t0  = vgb+k10+k20;
-    vge_t0  = vge+k10+k20;
-    vgbe_t0 = (vgb_t0+vge_t0)/2;
-    vgbe0   = (vgb+vge)/2;
-    vgbc0   = (vgb+vgc)/2;
-    vgsc0   = (vgs+vgc)/2;
-    mg      = 3-`P_Q*f1vg/`P_K;
-    zetabci = mg+1-zetaci;
-    zetabcxt= mg+1-zetacx;
-    zetasct = mg-1.5;
-
-    //Depletion capacitance splitting at b-c junction
-    //Capacitances at peripheral and external base node
-    C_1    = (1.0-fbcpar)*(cjcx0+cbcpar);
-    if (C_1 >= cbcpar) begin
-        cbcpar1 = cbcpar;
-        cbcpar2 = 0.0;
-        cjcx01  = C_1-cbcpar;
-        cjcx02  = cjcx0-cjcx01;
-    end else begin
-        cbcpar1 = C_1;
-        cbcpar2 = cbcpar-cbcpar1;
-        cjcx01  = 0.0;
-        cjcx02  = cjcx0;
-    end
-
-    //Parasitic b-e capacitance partitioning: No temperature dependence
-    cbepar2 = fbepar*cbepar;
-    cbepar1 = cbepar-cbepar2;
-
-    //Avoid devide-by-zero and define infinity other way
-    //High current correction for 2D and 3D effects
-    if (ich != 0.0) begin
-        Oich    = 1.0/ich;
-    end else begin
-        Oich    = 0.0;
-    end
-
-    //Base current recombination time constant at b-c barrier
-    if (tbhrec != 0.0) begin
-        Otbhrec = 1.0/tbhrec;
-    end else begin
-        Otbhrec = 0.0;
-    end
-
-    // Temperature and resulting parameter drift
-    if (flsh==0 || rth < `MIN_R) begin : Thermal_updat_without_self_heating
-        Tdev    = Tamb+dt;
-        if(Tdev < `TMIN + 273.15) begin
-            Tdev = `TMIN + 273.15;
-        end else begin
-            if (Tdev > `TMAX + 273.15) begin
-                Tdev = `TMAX + 273.15;
-            end
-        end
-        VT      = `P_K*Tdev /`P_Q;
-        dT      = Tdev-Tnom;
-        qtt0    = Tdev/Tnom;
-        ln_qtt0 = ln(qtt0);
-        k1      = f1vg*Tdev*ln(Tdev);
-        k2      = f2vg*Tdev;
-        vgb_t   = vgb+k1+k2;
-        vge_t   = vge+k1+k2;
-        vgbe_t  = (vgb_t+vge_t)/2;
-
-        //Internal b-e junction capacitance
-        `TMPHICJ(cjei0,vdei,zei,ajei,1,vgbe0,cjei0_t,vdei_t,ajei_t)
-
-        if (flcomp == 0.0 || flcomp == 2.1) begin
-            V_gT     = 3.0*VT*ln_qtt0 + vgb*(qtt0-1.0);
-            r_VgVT   = V_gT/VT;
-            //Internal b-e diode saturation currents
-            a        = mcf*r_VgVT/mbei - alb*dT;
-            ibeis_t  = ibeis*exp(a);
-            a        = mcf*r_VgVT/mrei - alb*dT;
-            ireis_t  = ireis*exp(a);
-            a        = mcf*r_VgVT/mbep - alb*dT;
-            //Peripheral b-e diode saturation currents
-            ibeps_t  = ibeps*exp(a);
-            a        = mcf*r_VgVT/mrep - alb*dT;
-            ireps_t  = ireps*exp(a);
-            //Internal b-c diode saturation current
-            a       = r_VgVT/mbci;
-            ibcis_t = ibcis*exp(a);
-            //External b-c diode saturation currents
-            a       = r_VgVT/mbcx;
-            ibcxs_t = ibcxs*exp(a);
-            //Saturation transfer current for substrate transistor
-            a       = r_VgVT/msf;
-            itss_t  = itss*exp(a);
-            //Saturation current for c-s diode
-            a       = r_VgVT/msc;
-            iscs_t  = iscs*exp(a);
-            //Zero bias hole charge
-            a        = vdei_t/vdei;
-            qp0_t    = qp0*(1.0+0.5*zei*(1.0-a));
-            //Voltage separating ohmic and saturation velocity regime
-            a = vlim*(1.0-alvs*dT)*exp(zetaci*ln_qtt0);
-            k = (a-VT)/VT;
-            if (k < `LN_EXP_LIMIT) begin
-                vlim_t = VT + VT*ln(1.0+exp(k));
-            end else begin
-                vlim_t = a;
-            end
-            //Neutral emitter storage time
-            a        = 1.0+alb*dT;
-            k        = 0.5*(a+sqrt(a*a+0.01));
-            tef0_t   = tef0*qtt0/k;
-        end else begin
-            //Internal b-e diode saturation currents
-            ibeis_t  = ibeis*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1));
-            ireis_t  = ireis*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1));
-            //Peripheral b-e diode saturation currents
-            ibeps_t  = ibeps*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1));
-            ireps_t  = ireps*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1));
-            //Internal b-c diode saturation currents
-            ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1));
-            //External b-c diode saturation currents
-            ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1));
-            //Saturation transfer current for substrate transistor
-            itss_t  = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1));
-            //Saturation current for c-s diode
-            iscs_t  = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1));
-            //Zero bias hole charge
-            a       = exp(zei*ln(vdei_t/vdei));
-            qp0_t   = qp0*(2.0-a);
-            //Voltage separating ohmic and saturation velocity regime
-            vlim_t  = vlim*exp((zetaci-avs)*ln_qtt0);
-            //Neutral emitter storage time
-            zetatef = zetabet-zetact-0.5;
-            dvg0    = vgb-vge;
-            tef0_t  = tef0*exp(zetatef*ln_qtt0-dvg0/VT*(qtt0-1));
-        end
-
-        //GICCR prefactor
-        c10_t   = c10*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1));
-
-        // Low-field internal collector resistance
-        rci0_t  = rci0*exp(zetaci*ln_qtt0);
-
-        //Voltage separating ohmic and saturation velocity regime
-        //vlim_t  = vlim*exp((zetaci-avs)*ln_qtt0);
-
-        //Internal c-e saturation voltage
-        vces_t  = vces*(1+alces*dT);
-
-
-        //Internal b-c diode saturation current
-        //ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1));
-
-        //Internal b-c junction capacitance
-        `TMPHICJ(cjci0,vdci,zci,vptci,0,vgbc0,cjci0_t,vdci_t,vptci_t)
-
-        //Low-current forward transit time
-        t0_t    = t0*(1+alt0*dT+kt0*dT*dT);
-
-        //Saturation time constant at high current densities
-        thcs_t  = thcs*exp((zetaci-1)*ln_qtt0);
-
-
-        //Avalanche caurrent factors
-        favl_t  = favl*exp(alfav*dT);
-        qavl_t  = qavl*exp(alqav*dT);
-
-        //Zero bias internal base resistance
-        rbi0_t  = rbi0*exp(zetarbi*ln_qtt0);
-
-
-        //Peripheral b-e junction capacitance
-        `TMPHICJ(cjep0,vdep,zep,ajep,1,vgbe0,cjep0_t,vdep_t,ajep_t)
-
-        //Tunneling current factors
-        begin : HICTUN_T
-//            real a_eg,ab,aa;
-            ab      = 1.0;
-            aa      = 1.0;
-            a_eg=vgbe_t0/vgbe_t;
-            if(tunode==1 && cjep0 > 0.0 && vdep >0.0) begin
-                ab      = (cjep0_t/cjep0)*sqrt(a_eg)*vdep_t*vdep_t/(vdep*vdep);
-                aa      = (vdep/vdep_t)*(cjep0/cjep0_t)*pow(a_eg,-1.5);
-            end else if (tunode==0 && cjei0 > 0.0 && vdei >0.0) begin
-                ab      = (cjei0_t/cjei0)*sqrt(a_eg)*vdei_t*vdei_t/(vdei*vdei);
-                aa      = (vdei/vdei_t)*(cjei0/cjei0_t)*pow(a_eg,-1.5);
-            end
-            ibets_t = ibets*ab;
-            abet_t  = abet*aa;
-        end
-
-
-        //Temperature mapping for tunneling current is done inside HICTUN
-
-        `TMPHICJ(1.0,vdcx,zcx,vptcx,0,vgbc0,cratio_t,vdcx_t,vptcx_t)
-        cjcx01_t=cratio_t*cjcx01;
-        cjcx02_t=cratio_t*cjcx02;
-
-
-        //External b-c diode saturation currents
-        //ibcxs_t       = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1));
-
-
-        //Constant external series resistances
-        rcx_t   = rcx*exp(zetarcx*ln_qtt0);
-        rbx_t   = rbx*exp(zetarbx*ln_qtt0);
-        re_t    = re*exp(zetare*ln_qtt0);
-
-        //Forward transit time in substrate transistor
-        tsf_t   = tsf*exp((zetacx-1.0)*ln_qtt0);
-
-        //Capacitance for c-s junction
-        `TMPHICJ(cjs0,vds,zs,vpts,0,vgsc0,cjs0_t,vds_t,vpts_t)
-
-    end // of Thermal_update_without_self_heating
-
-end     //of Model_initialization
-
-if (flsh!=0 && rth >= `MIN_R) begin : Thermal_update_with_self_heating
-    Tdev    = Tamb+dt+V(br_sht);
-    // Limit temperature to avoid FPEs in equations
-    if(Tdev < `TMIN + 273.15) begin
-        Tdev = `TMIN + 273.15;
-    end else begin
-        if (Tdev > `TMAX + 273.15) begin
-            Tdev = `TMAX + 273.15;
-        end
-    end
-    VT      = `P_K*Tdev /`P_Q;
-    dT      = Tdev-Tnom;
-    qtt0    = Tdev/Tnom;
-    ln_qtt0 = ln(qtt0);
-    k1      = f1vg*Tdev*ln(Tdev);
-    k2      = f2vg*Tdev;
-    vgb_t   = vgb+k1+k2;
-    vge_t   = vge+k1+k2;
-    vgbe_t  = (vgb_t+vge_t)/2;
-
-    //Internal b-e junction capacitance
-    `TMPHICJ(cjei0,vdei,zei,ajei,1,vgbe0,cjei0_t,vdei_t,ajei_t)
-
-    if (flcomp == 0.0 || flcomp == 2.1) begin
-        V_gT     = 3.0*VT*ln_qtt0 + vgb*(qtt0-1.0);
-        r_VgVT   = V_gT/VT;
-        //Internal b-e diode saturation currents
-        a        = mcf*r_VgVT/mbei - alb*dT;
-        ibeis_t  = ibeis*exp(a);
-        a        = mcf*r_VgVT/mrei - alb*dT;
-        ireis_t  = ireis*exp(a);
-        a        = mcf*r_VgVT/mbep - alb*dT;
-        //Peripheral b-e diode saturation currents
-        ibeps_t  = ibeps*exp(a);
-        a        = mcf*r_VgVT/mrep - alb*dT;
-        ireps_t  = ireps*exp(a);
-        //Internal b-c diode saturation current
-        a       = r_VgVT/mbci;
-        ibcis_t = ibcis*exp(a);
-        //External b-c diode saturation currents
-        a       = r_VgVT/mbcx;
-        ibcxs_t = ibcxs*exp(a);
-        //Saturation transfer current for substrate transistor
-        a       = r_VgVT/msf;
-        itss_t  = itss*exp(a);
-        //Saturation current for c-s diode
-        a       = r_VgVT/msc;
-        iscs_t  = iscs*exp(a);
-        //Zero bias hole charge
-        a        = vdei_t/vdei;
-        qp0_t    = qp0*(1.0+0.5*zei*(1.0-a));
-        //Voltage separating ohmic and saturation velocity regime
-        a = vlim*(1.0-alvs*dT)*exp(zetaci*ln_qtt0);
-        k = (a-VT)/VT;
-        if (k < `LN_EXP_LIMIT) begin
-            vlim_t = VT + VT*ln(1.0+exp(k));
-        end else begin
-            vlim_t = a;
-        end
-        //Neutral emitter storage time
-        a        = 1.0+alb*dT;
-        k        = 0.5*(a+sqrt(a*a+0.01));
-        tef0_t   = tef0*qtt0/k;
-    end else begin
-        //Internal b-e diode saturation currents
-        ibeis_t  = ibeis*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1));
-        ireis_t  = ireis*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1));
-        //Peripheral b-e diode saturation currents
-        ibeps_t  = ibeps*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1));
-        ireps_t  = ireps*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1));
-        //Internal b-c diode saturation currents
-        ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1));
-        //External b-c diode saturation currents
-        ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1));
-        //Saturation transfer current for substrate transistor
-        itss_t  = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1));
-        //Saturation current for c-s diode
-        iscs_t  = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1));
-        //Zero bias hole charge
-        a       = exp(zei*ln(vdei_t/vdei));
-        qp0_t   = qp0*(2.0-a);
-        //Voltage separating ohmic and saturation velocity regime
-        vlim_t  = vlim*exp((zetaci-avs)*ln_qtt0);
-        //Neutral emitter storage time
-        zetatef = zetabet-zetact-0.5;
-        dvg0    = vgb-vge;
-        tef0_t  = tef0*exp(zetatef*ln_qtt0-dvg0/VT*(qtt0-1));
-    end
-
-    //GICCR prefactor
-    c10_t   = c10*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1));
-
-    // Low-field internal collector resistance
-    rci0_t  = rci0*exp(zetaci*ln_qtt0);
-
-    //Voltage separating ohmic and saturation velocity regime
-    //vlim_t  = vlim*exp((zetaci-avs)*ln_qtt0);
-
-    //Internal c-e saturation voltage
-    vces_t  = vces*(1+alces*dT);
-
-
-    //Internal b-c diode saturation current
-    //ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1));
-
-    //Internal b-c junction capacitance
-    `TMPHICJ(cjci0,vdci,zci,vptci,0,vgbc0,cjci0_t,vdci_t,vptci_t)
-
-    //Low-current forward transit time
-    t0_t    = t0*(1+alt0*dT+kt0*dT*dT);
-
-    //Saturation time constant at high current densities
-    thcs_t  = thcs*exp((zetaci-1)*ln_qtt0);
-
-
-    //Avalanche caurrent factors
-    favl_t  = favl*exp(alfav*dT);
-    qavl_t  = qavl*exp(alqav*dT);
-
-    //Zero bias internal base resistance
-    rbi0_t  = rbi0*exp(zetarbi*ln_qtt0);
-
-
-    //Peripheral b-e junction capacitance
-    `TMPHICJ(cjep0,vdep,zep,ajep,1,vgbe0,cjep0_t,vdep_t,ajep_t)
-
-    //Tunneling current factors
-    if (V(br_bpei) < 0.0 || V(br_biei) < 0.0) begin : HICTUN_T
-//        real a_eg,ab,aa;
-        ab      = 1.0;
-        aa      = 1.0;
-        a_eg=vgbe_t0/vgbe_t;
-        if(tunode==1 && cjep0 > 0.0 && vdep >0.0) begin
-            ab      = (cjep0_t/cjep0)*sqrt(a_eg)*vdep_t*vdep_t/(vdep*vdep);
-            aa      = (vdep/vdep_t)*(cjep0/cjep0_t)*pow(a_eg,-1.5);
-        end else if (tunode==0 && cjei0 > 0.0 && vdei >0.0) begin
-            ab      = (cjei0_t/cjei0)*sqrt(a_eg)*vdei_t*vdei_t/(vdei*vdei);
-            aa      = (vdei/vdei_t)*(cjei0/cjei0_t)*pow(a_eg,-1.5);
-        end
-        ibets_t = ibets*ab;
-        abet_t  = abet*aa;
-    end
-
-
-    //Temperature mapping for tunneling current is done inside HICTUN
-
-    `TMPHICJ(1.0,vdcx,zcx,vptcx,0,vgbc0,cratio_t,vdcx_t,vptcx_t)
-    cjcx01_t=cratio_t*cjcx01;
-    cjcx02_t=cratio_t*cjcx02;
-
-
-    //External b-c diode saturation currents
-    //ibcxs_t       = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1));
-
-
-    //Constant external series resistances
-    rcx_t   = rcx*exp(zetarcx*ln_qtt0);
-    rbx_t   = rbx*exp(zetarbx*ln_qtt0);
-    re_t    = re*exp(zetare*ln_qtt0);
-
-    //Forward transit time in substrate transistor
-    tsf_t   = tsf*exp((zetacx-1.0)*ln_qtt0);
-
-    //Capacitance for c-s junction
-    `TMPHICJ(cjs0,vds,zs,vpts,0,vgsc0,cjs0_t,vds_t,vpts_t)
-
-end     //of Thermal_update_with_self_heating
-
-
-begin : Model_evaluation
-
-    //Intrinsic transistor
-    //Internal base currents across b-e junction
-    `HICDIO(ibeis,ibeis_t,mbei,V(br_biei),ibei)
-    `HICDIO(ireis,ireis_t,mrei,V(br_biei),irei)
-
-    //HICCR: begin
-
-    //Inverse of low-field internal collector resistance: needed in HICICK
-    Orci0_t = 1.0/rci0_t;
-
-    //Initialization
-    //Transfer current, minority charges and transit times
-
-    Tr      = tr;
-    VT_f    = mcf*VT;
-    i_0f    = c10_t * limexp(V(br_biei)/VT_f);
-    i_0r    = c10_t * limexp(V(br_bici)/VT);
-
-    //Internal b-e and b-c junction capacitances and charges
-    //`QJMODF(cjei0_t,vdei_t,zei,ajei_t,V(br_biei),Qjei)
-    //Cjei    = ddx(Qjei,V(bi));
-    `QJMODF(cjei0_t,vdei_t,zei,ajei_t,V(br_biei),Cjei,Qjei)
-
-    //`HICJQ(cjci0_t,vdci_t,zci,vptci_t,V(br_bici),Qjci)
-    //Cjci    = ddx(Qjci,V(bi));
-    `HICJQ(cjci0_t,vdci_t,zci,vptci_t,V(br_bici),Cjci,Qjci)
-
-    //Hole charge at low bias
-    a_bpt   = 0.05;
-    Q_0     = qp0_t + hjei*Qjei + hjci*Qjci;
-    Q_bpt   = a_bpt*qp0_t;
-    b_q     = Q_0/Q_bpt-1;
-    Q_0     = Q_bpt*(1+(b_q +sqrt(b_q*b_q+1.921812))/2);
-
-    //Transit time calculation at low current density
-    if(cjci0_t > 0.0) begin : CJMODF
-//        real cV_f,cv_e,cs_q,cs_q2,cv_j,cdvj_dv;
-        cV_f    = vdci_t*(1.0-exp(-ln(2.4)/zci));
-        cv_e    = (cV_f-V(br_bici))/VT;
-        cs_q    = sqrt(cv_e*cv_e+1.921812);
-        cs_q2   = (cv_e+cs_q)*0.5;
-        cv_j    = cV_f-VT*cs_q2;
-        cdvj_dv = cs_q2/cs_q;
-        Cjcit   = cjci0_t*exp(-zci*ln(1.0-cv_j/vdci_t))*cdvj_dv+2.4*cjci0_t*(1.0-cdvj_dv);
-    end else begin
-        Cjcit   = 0.0;
-    end
-    if(Cjcit > 0.0) begin
-        cc      = cjci0_t/Cjcit;
-    end else begin
-        cc      = 1.0;
-    end
-    T_f0    = t0_t+dt0h*(cc-1.0)+tbvl*(1/cc-1.0);
-
-    //Effective collector voltage
-    vc      = V(br_ciei)-vces_t;
-
-    //Critical current for onset of high-current effects
-    begin : HICICK
-        Ovpt    = 1.0/vpt;
-        a       = vc/VT;
-        d1      = a-1;
-        vceff   = (1.0+((d1+sqrt(d1*d1+1.921812))/2))*VT;
-        a       = vceff/vlim_t;
-        ick     = vceff*Orci0_t/sqrt(1.0+a*a);
-        ICKa    = (vceff-vlim_t)*Ovpt;
-        ick     = ick*(1.0+0.5*(ICKa+sqrt(ICKa*ICKa+1.0e-3)));
-    end
-
-    //Initial formulation of forward and reverse component of transfer current
-    Q_p     = Q_0;
-    if (T_f0 > 0.0 || Tr > 0.0) begin
-        A       = 0.5*Q_0;
-        Q_p     = A+sqrt(A*A+T_f0*i_0f+Tr*i_0r);
-    end
-    I_Tf1   =i_0f/Q_p;
-    a_h     = Oich*I_Tf1;
-    itf     = I_Tf1*(1.0+a_h);
-    itr     = i_0r/Q_p;
-
-    //Initial formulation of forward transit time, diffusion, GICCR and excess b-c charge
-    Q_bf    = 0.0;
-    Tf      = T_f0;
-    Qf      = T_f0*itf;
-    `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf)
-
-    //Initial formulation of reverse diffusion charge
-    Qr      = Tr*itr;
-
-    //Preparation for iteration to get total hole charge and related variables
-    l_it    = 0;
-    if(Qf > `RTOLC*Q_p || a_h > `RTOLC) begin
-        //Iteration for Q_pT is required for improved initial solution
-        Qf      = sqrt(T_f0*itf*Q_fT);
-        Q_pT    = Q_0+Qf+Qr;
-        d_Q     = Q_pT;
-        while (abs(d_Q) >= `RTOLC*abs(Q_pT) && l_it <= `l_itmax) begin
-            d_Q0    = d_Q;
-            I_Tf1   = i_0f/Q_pT;
-            a_h     = Oich*I_Tf1;
-            itf     = I_Tf1*(1.0+a_h);
-            itr     = i_0r/Q_pT;
-            Tf      = T_f0;
-            Qf      = T_f0*itf;
-            `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf)
-            Qr      = Tr*itr;
-            if(Oich == 0.0) begin
-                a       = 1.0+(T_fT*itf+Qr)/Q_pT;
-            end else begin
-                a       = 1.0+(T_fT*I_Tf1*(1.0+2.0*a_h)+Qr)/Q_pT;
-            end
-            d_Q     = -(Q_pT-(Q_0+Q_fT+Qr))/a;
-            //Limit maximum change of Q_pT
-            a       = abs(0.3*Q_pT);
-            if(abs(d_Q) > a) begin
-                if (d_Q>=0) begin
-                    d_Q     = a;
-                end else begin
-                    d_Q     = -a;
-                end
-            end
-            Q_pT    = Q_pT+d_Q;
-            l_it    = l_it+1;
-        end //while
-
-        I_Tf1   = i_0f/Q_pT;
-        a_h     = Oich*I_Tf1;
-        itf     = I_Tf1*(1.0+a_h);
-        itr     = i_0r/Q_pT;
-
-        //Final transit times, charges and transport current components
-        Tf      = T_f0;
-        Qf      = T_f0*itf;
-        `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf)
-        Qr      = Tr*itr;
-
-    end //if
-
-    //NQS effect implemented with LCR networks
-    //Once the delay in ITF is considered, IT_NQS is calculated afterwards
-
-    it      = itf-itr;
-
-    //Diffusion charges for further use
-    Qdei    = Qf;
-    Qdci    = Qr;
-
-
-    //High-frequency emitter current crowding (lateral NQS)
-    Cdei    = -1*ddx(Qdei,V(ei));
-    Cdci    = -1*ddx(Qdci,V(ci));
-    Crbi    = fcrbi*(Cjei+Cjci+Cdei+Cdci);
-    qrbi    = Crbi*V(br_bpbi_v);
-
-//    qrbi	= fcrbi*(Qjei+Qjci+Qdei+Qdci);
-
-    //HICCR: end
-
-    //Internal base current across b-c junction
-    `HICDIO(ibcis,ibcis_t,mbci,V(br_bici),ibci)
-
-    //Avalanche current
-    if((V(br_bici) < 0.0) && (favl_t > 0.0) && (cjci0_t > 0.0)) begin : HICAVL
-//        real v_bord,v_q,U0,av,avl;
-        v_bord  = vdci_t-V(br_bici);
-        v_q     = qavl_t/Cjci;
-        U0      = qavl_t/cjci0_t;
-        if(v_bord > U0) begin
-                av      = favl_t*exp(-v_q/U0);
-                avl     = av*(U0+(1.0+v_q/U0)*(v_bord-U0));
-        end else begin
-            avl     = favl_t*v_bord*exp(-v_q/v_bord);
-        end
-        iavl    = itf*avl;
-    end else begin
-        iavl    = 0.0;
-    end
-
-    //Excess base current from recombination at the b-c barrier
-    ibh_rec = Q_bf*Otbhrec;
-
-    //Internal base resistance
-    if(rbi0_t > 0.0) begin : HICRBI
-//        real Qz_nom,f_QR,ETA,Qz0,fQz;
-        // Consideration of conductivity modulation
-        // To avoid convergence problem hyperbolic smoothing used
-        f_QR    = (1+fdqr0)*qp0_t;
-        Qz0     = Qjei+Qjci+Qf;
-        Qz_nom  = 1+Qz0/f_QR;
-        fQz     = 0.5*(Qz_nom+sqrt(Qz_nom*Qz_nom+0.01));
-        rbi     = rbi0_t/fQz;
-        // Consideration of emitter current crowding
-        if( ibei > 0.0) begin
-            ETA     = rbi*ibei*fgeo/VT;
-            if(ETA < 1.0e-6) begin
-                rbi     = rbi*(1.0-0.5*ETA);
-            end else begin
-                rbi     = rbi*ln(1.0+ETA)/ETA;
-            end
-        end
-        // Consideration of peripheral charge
-        if(Qf > 0.0) begin
-            rbi     = rbi*(Qjei+Qf*fqi)/(Qjei+Qf);
-        end
-    end else begin
-        rbi     = 0.0;
-    end
-
-    //Base currents across peripheral b-e junction
-    `HICDIO(ibeps,ibeps_t,mbep,V(br_bpei),ibep)
-    `HICDIO(ireps,ireps_t,mrep,V(br_bpei),irep)
-
-    //Peripheral b-e junction capacitance and charge
-    `QJMODF(cjep0_t,vdep_t,zep,ajep_t,V(br_bpei),Cjep,Qjep)
-
-    //Tunelling current
-    if (V(br_bpei) <0.0 || V(br_biei) < 0.0) begin : HICTUN
-//        real pocce,czz;
-        if(tunode==1 && cjep0_t > 0.0 && vdep_t >0.0) begin
-            pocce   = exp((1-1/zep)*ln(Cjep/cjep0_t));
-            czz     = -(V(br_bpei)/vdep_t)*ibets_t*pocce;
-            ibet    = czz*exp(-abet_t/pocce);
-            end else if (tunode==0 && cjei0_t > 0.0 && vdei_t >0.0) begin
-                pocce   = exp((1-1/zei)*ln(Cjei/cjei0_t));
-                czz     = -(V(br_biei)/vdei_t)*ibets_t*pocce;
-                ibet    = czz*exp(-abet_t/pocce);
-            end else begin
-            ibet    = 0.0;
-        end
-    end else begin
-        ibet    = 0.0;
-    end
-
-
-    //Depletion capacitance and charge at peripheral b-c junction (bp,ci)
-    `HICJQ(cjcx02_t,vdcx_t,zcx,vptcx_t,V(br_bpci),c_dummy,qjcx0_t_ii)
-
-    //Base currents across peripheral b-c junction (bp,ci)
-    `HICDIO(ibcxs,ibcxs_t,mbcx,V(br_bpci),ijbcx)
-
-    //Depletion capacitance and charge at external b-c junction (b,ci)
-    `HICJQ(cjcx01_t,vdcx_t,zcx,vptcx_t,V(br_bci),c_dummy,qjcx0_t_i)
-
-    //Depletion substrate capacitance and charge at s-c junction (si,ci)
-    `HICJQ(cjs0_t,vds_t,zs,vpts_t,V(br_sici),c_dummy,Qjs)
-
-    //Parasitic substrate transistor transfer current and diffusion charge
-    if(itss > 0.0) begin : Sub_Transfer
-        HSUM    = msf*VT;
-        HSa     = limexp(V(br_bpci)/HSUM);
-        HSb     = limexp(V(br_sici)/HSUM);
-        HSI_Tsu = itss_t*(HSa-HSb);
-        if(tsf > 0.0) begin
-            Qdsu    = tsf_t*itss_t*HSa;
-        end else begin
-            Qdsu    = 0.0;
-        end
-    end else begin
-        HSI_Tsu = 0.0;
-        Qdsu    = 0.0;
-    end
-
-    // Current gain computation for correlated noise implementation
-    betad=ibei;
-    if (betad > 0.0) begin
-        betadin=betad;
-        betan=it;
-        betadc=betan/betad;
-    end else begin
-        betadc=0.0;
-    end
-
-    //Diode current for s-c junction (si,ci)
-    `HICDIO(iscs,iscs_t,msc,V(br_sici),ijsc)
-
-    //Self-heating calculation
-    if (flsh == 1 && rth >= `MIN_R) begin
-        pterm   =  V(br_ciei)*it + (vdci_t-V(br_bici))*iavl;
-    end else if (flsh == 2 && rth >= `MIN_R) begin
-        pterm   =  V(br_ciei)*it + (vdci_t-V(br_bici))*iavl + ibei*V(br_biei) + ibci*V(br_bici) + ibep*V(br_bpei) + ijbcx*V(br_bpci) + ijsc*V(br_sici);
-        if (rbi >= `MIN_R) begin
-            pterm   = pterm + V(br_bpbi_i)*V(br_bpbi_i)/rbi;
-        end
-        if (re_t >= `MIN_R) begin
-            pterm   = pterm + V(br_eie_i)*V(br_eie_i)/re_t;
-        end
-        if (rcx_t >= `MIN_R) begin
-            pterm   = pterm + V(br_cic_i)*V(br_cic_i)/rcx_t;
-        end
-        if (rbx_t >= `MIN_R) begin
-            pterm   = pterm + V(br_bbp_i)*V(br_bbp_i)/rbx_t;
-        end
-    end
-
-    Itxf	= itf;
-    Qdeix	= Qdei;
-    // Excess Phase calculation
-
-    if (flnqs != 0 && Tf != 0) begin
-        Vxf1	= V(br_bxf1);
-        Vxf2	= V(br_bxf2);
-
-        Ixf1	=  (Vxf2-itf)/Tf*t0;
-        Ixf2	=  (Vxf2-Vxf1)/Tf*t0;
-        Qxf1	=  alit*Vxf1*t0;
-        Qxf2	=  alit*Vxf2/3*t0;
-        Itxf	=  Vxf2;
-
-        Vxf	= V(br_bxf);               //for RC nw
-        fact  = t0/Tf;                 //for RC nw  
-        Ixf   = (Vxf - Qdei)*fact;     //for RC nw
-        Qxf   = alqf*Vxf*t0;           //for RC nw
-        Qdeix = Vxf;                   //for RC nw
-    end else begin
-        Ixf1	=  V(br_bxf1);
-        Ixf2	=  V(br_bxf2);
-        Qxf1	=  0;
-        Qxf2	=  0;
-
-        Ixf   = V(br_bxf);     
-        Qxf   = 0;
-    end
-
-end     //of Model_evaluation
-
-begin : Load_sources
-
-    I(br_biei)      <+ _circuit_gmin*V(br_biei);
-    I(br_bici)      <+ _circuit_gmin*V(br_bici);
-
-    I(br_bci)       <+ ddt(qjcx0_t_i);
-    I(br_bci)       <+ ddt(cbcpar1*V(br_bci));
-    I(br_bpci)      <+ ddt(cbcpar2*V(br_bpci));
-    if (rbx >= `MIN_R) begin
-        I(br_bbp_i)     <+ V(br_bbp_i)/rbx_t;
-    end else begin
-//        V(br_bbp_v)     <+ 0.0;
-        I(br_bbp_i)     <+ V(br_bbp_i)/`MIN_R;
-    end
-    if(rbi0 >= `MIN_R) begin
-        I(br_bpbi_i)    <+ V(br_bpbi_i)/rbi;
-        I(br_bpbi_i)    <+ ddt(qrbi);
-    end else begin
-//        V(br_bpbi_v)    <+ 0.0;
-        I(br_bpbi_i)    <+ V(br_bpbi_i)/`MIN_R;
-    end
-    if (tunode==1.0) begin
-        I(br_bpei)      <+ -ibet;
-    end else begin
-        I(br_biei)      <+ -ibet;
-    end
-    I(br_bpei)      <+ ibep;
-    I(br_bpei)      <+ irep;
-    I(br_bpei)      <+ ddt(Qjep);
-    I(br_biei)      <+ ibei;
-    I(br_biei)      <+ irei;
-    I(br_biei)      <+ ibh_rec;
-    I(br_biei)      <+ ddt(Qdeix+Qjei);
-    I(br_bpsi)      <+ HSI_Tsu;
-    I(br_bpci)      <+ ijbcx;
-    I(br_bpci)      <+ ddt(qjcx0_t_ii+Qdsu);
-    I(br_be)        <+ ddt(cbepar1*V(br_be));
-    I(br_bpe)       <+ ddt(cbepar2*V(br_bpe));
-    I(br_bici)      <+ ibci-iavl;
-    I(br_bici)      <+ ddt(Qdci+Qjci);
-    I(br_sici)      <+ ijsc;
-    I(br_sici)      <+ ddt(Qjs);
-    I(br_ciei)      <+ Itxf;
-    I(br_eici)      <+ itr;
-    if (rcx >= `MIN_R) begin
-        I(br_cic_i)     <+ V(br_cic_i)/rcx_t;
-    end else begin
-//        V(br_cic_v)     <+ 0.0;
-        I(br_cic_i)     <+ V(br_cic_i)/`MIN_R;
-    end
-    if (re >= `MIN_R) begin
-        I(br_eie_i)     <+ V(br_eie_i)/re_t;
-    end else begin
-//        V(br_eie_v)     <+ 0.0;
-        I(br_eie_i)     <+ V(br_eie_i)/`MIN_R;
-    end
-    if(rsu >= `MIN_R) begin
-        I(br_sis_i)     <+ V(br_sis_i)/rsu;
-        I(br_sis_i)     <+ ddt(csu*V(br_sis_i));
-    end else begin
-//        V(br_sis_v)     <+ 0.0;
-        I(br_sis_i)     <+ V(br_sis_i)/`MIN_R;
-    end
-
-    // Following code is an intermediate solution (if branch contribution is not supported):
-    // ******************************************
-    if(flsh == 0 || rth < `MIN_R) begin
-          I(br_sht)       <+ V(br_sht)/`MIN_R;
-    end else begin
-          I(br_sht)       <+ V(br_sht)/rth-pterm;
-          I(br_sht)       <+ ddt(cth*V(br_sht));
-    end
-
-    // ******************************************
-
-    // For simulators having no problem with V(br_sht) <+ 0.0
-    // with external thermal node, follwing code may be used.
-    // Note that external thermal node should remain accessible
-    // even without self-heating.
-    // ********************************************
-    //if(flsh == 0 || rth < `MIN_R) begin
-    //    V(br_sht)       <+ 0.0;
-    //end else begin
-    //    I(br_sht)       <+ V(br_sht)/rth-pterm;
-    //    I(br_sht)       <+ ddt(cth*V(br_sht));
-    //end
-    // ********************************************
-
-    // NQS effect
-    I(br_bxf1) <+ Ixf1;
-    I(br_cxf1) <+ ddt(Qxf1);
-    I(br_bxf2) <+ Ixf2;
-    I(br_cxf2) <+ ddt(Qxf2);
-
-    I(br_bxf) <+  Ixf;         //for RC nw
-    I(br_cxf) <+  ddt(Qxf);    //for RC nw
-
-end //of Load_sources
-
-
-`NOISE begin : Noise_sources
-
-    //Thermal noise
-    fourkt  = 4.0 * `P_K * Tdev;
-    if(rbx >= `MIN_R) begin
-        I(br_bbp_i)     <+ white_noise(fourkt/rbx_t,    "thermal");
-    end
-    if(rbi0 >= `MIN_R) begin
-        I(br_bpbi_i)    <+ white_noise(fourkt/rbi,      "thermal");
-    end
-    if(rcx >= `MIN_R) begin
-        I(br_cic_i)     <+ white_noise(fourkt/rcx_t,    "thermal");
-    end
-    if(re >= `MIN_R) begin
-        I(br_eie_i)     <+ white_noise(fourkt/re_t,     "thermal");
-    end
-    if(rsu >= `MIN_R) begin
-        I(br_sis_i)     <+ white_noise(fourkt/rsu,      "thermal");
-    end
-
-    //Flicker noise : Fully correlated between the perimeter and internal base-node
-    flicker_Pwr     = kf*pow((ibei+ibep),af);
-    if (cfbe == -1) begin
-        I(br_biei)      <+ flicker_noise(flicker_Pwr,1.0);
-    end else begin
-        I(br_bpei)      <+ flicker_noise(flicker_Pwr,1.0);
-    end
-
-    //Shot noise
-
-    twoq    = 2.0 * `P_Q;
-    //     I(br_ciei)      <+ white_noise(twoq*it,         "shot");
-    I(br_cibi)      <+ white_noise(twoq*iavl,       "shot");
-
-    //     I(br_biei)      <+ white_noise(twoq*ibei,       "shot");
-
-    I(br_bici)      <+ white_noise(twoq*abs(ibci),  "shot");
-
-    I(br_bpei)      <+ white_noise(twoq*ibep,       "shot");
-
-    I(br_bpci)      <+ white_noise(twoq*abs(ijbcx), "shot");
-
-    I(br_sici)      <+ white_noise(twoq*abs(ijsc),  "shot");
-
-    // Code section for correlated noise
-    // Please turn-off this code section by "//" in order to run the code with Spectre
-
-//    I(b_n1)		<+ white_noise(2 * `P_Q * ibei,		"shot");
-//    I(b_n1)		<+ V(b_n1);
-//    I(b_n2) 		<+ white_noise(2 * `P_Q * it,		"shot");
-//    I(b_n2)		<+ V(b_n2);
-//
-//    I(bi,ei) 		<+ V(b_n1); 
-//    I(ci,ei) 		<+ V(b_n2)+ddt((betadc/2)*alit*Tf*alit*Tf*ddt(V(b_n2))); 
-//    I(ci,ei)		<+ betadc*ddt(-(Tf*alit)*V(b_n1));                       
-end     //of Noise_sources
-
-end //analog
-endmodule
+//HICUM Level_2 Version_2.24: A Verilog-A Description
+
+//dw 09/10: Modifications for ngspice and adms:
+// backup to ddx for capacitance calculation
+// all V(...) <+ 0.0; are replaced by I(...) < V(...)/`MIN_R;
+// using GMIN from ngspice: _circuit_gmin
+// switch of section for correlated noise (see below)
+// removed obsolete variables S_avl, f_p
+// don't like internal variable declaration
+
+//**************New Implementations*****************
+
+//******************************************************************************
+//This code contains a Verilog-A implementation of Vertical Non-Quasi-Static(NQS) 
+//Effects using adjunct gyrator networks. To turn on this effect please set FLNQS=1. 
+//Although Vertical NQS effects have been taken into account in HICUM from the very 
+//beginning (see original FTN code and built-in v2.1 HICUM model inside most of the 
+//existing circuit simulators) their implementation has been based on Weil's approach. 
+//However, using Verilog, it is presently not possible to implement Weil's approach, 
+//since there does not exist access to previous time-steps of the simulatior. 
+//The nearly available Verilog-A solution reproduces the results of previous 
+//HICUM versions (cf. documentation).
+//******************************************************************************
+
+//******************************************************************************
+// Implementation of noise correlation
+// Please turn-off (by front slash “//”) the noise correlation code section for simulation with Spectre
+//******************************************************************************
+
+// ***************Bug fix and optimization*************
+// 12/09: Elimination of 'ddx' operator for internal capacitance determination
+//        Capacitances will be calculated by Analytical Equations 
+// 10/09: Temperature coefficient (ZETAxyz) range modified to [-10:10]
+// 09/09: VPT ranges modified from [0:inf] to (0:inf]
+// 07/09: DT0H rabge modified from no range to (-inf:inf) 
+// 03/09: Simplified input NQS adjacent circuit (RC network)
+// 04/08: New range has been defined for FDQR0.
+// 11/07: Bugs have been fixed in macro HICFCI and HICQFC
+// 10/06: in @(initial_model), external if-block for HICTUN_T removed
+// 11/06: within HICQFC, minor changes made for LATB<=0.01;
+// also HICFCI and HICFCT are changed accordingly
+// to ensure correct derivatives
+// Upper limit of FGEO parameter was changed to infinity.
+// 12/06: expressions for Cdei and Cdci are corrected not to include
+// Ccdei and Cbdci respectively (used in Crbi expression).
+
+// 01/06: FCdf1_dw assigned expression (missing in v2.21)
+// FCa and FCa1 are found to have same expression: FCa is omitted in those cases
+// FCa1 written instead of FCa in the expression for FCf_ci
+// Thermal node "tnode" set as external
+// zetasct = mg+1-2.5 changed to zetasct = mg-1.5;
+// Code optimization: Temperature dependent parts are moduled in two separate blocks:
+// within @(initial_model) when self-heating is OFF
+// outside @(initial_model) when self-heating is ON
+// 03/06 : Further fix
+// vlim_t,ibcis_t,ibcxs_t,itss_t,iscs_t considered in compatibility block
+// ddt() operators are separated in contribution expressions.
+// FLCOMP parameter is given different values
+// 05/06:
+// all if-else blocks marked with begin-end
+// unused variables deleted
+// all series resistors and RTH are allowed to have a minimum value MIN_R
+// only tunelling current source contribution within if-then-else
+// 06/06: HICRBI deleted and instead the code changed (hyperbolic smoothing in
+// conductivity modulation part) and put in relevant portion of the code.
+// 07/06: ddx() operator used to find out capacitances from charges:
+// QJMODF,QJMOD,HICJQ changed accordingly
+// Lateral NQS effect modified with ddx() operator.
+// HICFCT included for downward compatibility reason.
+// Few macros are taken inside the code: HICICK, HICAVL, HICTUN (more optimized),
+// internal base resistance (Qjci included under conductivity modulation, hyperbolic smoothing used)
+// Gmin added at (bi,ei) and (bi,ci) branches.
+// 08/06: Units added in the parameter descriptions.
+
+// *********************************************************************************
+// 06/06: Comment on NODE COLLAPSING:
+// Presently this verilog code permits a minimum of 1 milli-Ohm resistance for any
+// series resistance as well as for thermal resistance RTH. If any of the resistance
+// values drops below this minimum value, the corresponding nodes are shorted with
+// zero voltage contribution. We want the model compilers/simulators deal this
+// situation in such a manner that the corresponding node is COLLAPSED.
+// We expect that the simulators should permit current contribution statement
+// for any branch with resistance value more than (or equal to) 1 milli-Ohm without
+// any convergence problem. In fact, we wish NOT to have to use a voltage contribution
+// statement in our Verilog code, except as an indication for the model compiler/simulator
+// to interprete a zero branch voltage as NODE-COLLAPSING action.
+// **********************************************************************************
+
+
+//Default simulator: Spectre
+
+`ifdef insideADMS
+ `define MODEL @(initial_model)
+ `define NOISE @(noise)
+ `define ATTR(txt) (*txt*)
+`else
+ `define MODEL
+ `define NOISE
+ `define ATTR(txt)
+`endif
+
+
+`define VPT_thresh      1.0e2
+`define Dexp_lim        80.0
+`define Cexp_lim        80.0
+`define DFa_fj          1.921812
+`define RTOLC           1.0e-5
+`define l_itmax         100
+`define TMAX            326.85
+`define TMIN            -100.0
+`define LN_EXP_LIMIT    11.0
+`define MIN_R           0.001
+//`define Gmin            1.0e-12
+//`define Gmin      $simparam("gmin",1e-12)  //suggested by L.L
+
+//ADS
+//`include "constants.vams"
+//`include "disciplines.vams"
+//`include "compact.vams"
+
+//Spectre
+`include "constants.h"
+`include "discipline.h"
+
+//////////////Explicit Capacitance and Charge Expression///////////////
+
+// DEPLETION CHARGE CALCULATION
+// Hyperbolic smoothing used; no punch-through
+// INPUT:
+//  c_0		: zero-bias capacitance
+//  u_d		: built-in voltage
+//  z		: exponent coefficient
+//  a_j		: control parameter for C peak value at high forward bias
+//  U_cap	: voltage across junction
+// IMPLICIT INPUT:
+//  VT		: thermal voltage
+// OUTPUT:
+//  Qz		: depletion Charge 
+//  C		: depletion capacitance
+`define QJMODF(c_0,u_d,z,a_j,U_cap,C,Qz)\
+    if(c_0 > 0.0) begin\
+        DFV_f	 = u_d*(1.0-exp(-ln(a_j)/z));\
+        DFv_e	 = (DFV_f-U_cap)/VT;\
+        DFs_q	 = sqrt(DFv_e*DFv_e+`DFa_fj);\
+        DFs_q2	 = (DFv_e+DFs_q)*0.5;\
+        DFv_j	 = DFV_f-VT*DFs_q2;\
+        DFdvj_dv = DFs_q2/DFs_q;\
+        DFb	     = ln(1.0-DFv_j/u_d);\
+        DFC_j1   = c_0*exp(-z*DFb)*DFdvj_dv;\
+        C		 = DFC_j1+a_j*c_0*(1.0-DFdvj_dv);\
+        DFQ_j	 = c_0*u_d*(1.0-exp(DFb*(1.0-z)))/(1.0-z);\
+        Qz	     = DFQ_j+a_j*c_0*(U_cap-DFv_j);\
+    end else begin\
+        C        = 0.0;\
+        Qz	     = 0.0;\
+    end
+   
+////////////////////////////////////////////////////////////////
+
+
+//////////////Explicit Capacitance and Charge Expression///////////////
+
+
+// DEPLETION CHARGE CALCULATION CONSIDERING PUNCH THROUGH
+// smoothing of reverse bias region (punch-through) 
+// and limiting to a_j=Cj,max/Cj0 for forward bias.
+// Important for base-collector and collector-substrate junction
+// INPUT:
+//  c_0		: zero-bias capacitance
+//  u_d		: built-in voltage
+//  z 		: exponent coefficient
+//  a_j		: control parameter for C peak value at high forward bias
+//  v_pt	: punch-through voltage (defined as qNw^2/2e)
+//  U_cap	: voltage across junction
+// IMPLICIT INPUT:
+//  VT		: thermal voltage
+// OUTPUT:
+//  Qz		: depletion charge
+//  C		: depletion capacitance
+`define QJMOD(c_0,u_d,z,a_j,v_pt,U_cap,C,Qz)\
+    if(c_0 > 0.0) begin\
+        Dz_r	= z/4.0;\
+        Dv_p	= v_pt-u_d;\
+        DV_f	= u_d*(1.0-exp(-ln(a_j)/z));\
+        DC_max	= a_j*c_0;\
+        DC_c	= c_0*exp((Dz_r-z)*ln(v_pt/u_d));\
+        Dv_e	= (DV_f-U_cap)/VT;\
+        if(Dv_e < `Cexp_lim) begin\
+            De	    = exp(Dv_e);\
+            De_1	= De/(1.0+De);\
+            Dv_j1	= DV_f-VT*ln(1.0+De);\
+        end else begin\
+            De_1	= 1.0;\
+            Dv_j1	= U_cap;\
+        end\
+        Da	    = 0.1*Dv_p+4.0*VT;\
+        Dv_r	= (Dv_p+Dv_j1)/Da;\
+        if(Dv_r < `Cexp_lim) begin\
+            De	    = exp(Dv_r);\
+            De_2	= De/(1.0+De);\
+            Dv_j2	= -Dv_p+Da*ln(1.0+De);\
+        end else begin\
+            De_2	= 1.0;\
+            Dv_j2	= Dv_j1;\
+        end\
+        Dv_j4	= U_cap-Dv_j1;\
+        DCln1	= ln(1.0-Dv_j1/u_d);\
+        DCln2	= ln(1.0-Dv_j2/u_d);\
+        Dz1	    = 1.0-z;\
+        Dzr1	= 1.0-Dz_r;\
+        DC_j1	= c_0*exp(DCln2*(-z))*De_1*De_2;\
+        DC_j2	= DC_c*exp(DCln1*(-Dz_r))*(1.0-De_2);\
+        DC_j3	= DC_max*(1.0-De_1);\
+        C		= DC_j1+DC_j2+DC_j3;\
+        DQ_j1	= c_0*(1.0-exp(DCln2*Dz1))/Dz1;\
+        DQ_j2	= DC_c*(1.0-exp(DCln1*Dzr1))/Dzr1;\
+        DQ_j3	= DC_c*(1.0-exp(DCln2*Dzr1))/Dzr1;\
+        Qz	    = (DQ_j1+DQ_j2-DQ_j3)*u_d+DC_max*Dv_j4;\
+    end else begin\
+        C	    = 0.0;\
+        Qz	    = 0.0;\
+    end
+
+
+// DEPLETION CHARGE & CAPACITANCE CALCULATION SELECTOR
+// Dependent on junction punch-through voltage
+// Important for collector related junctions
+`define HICJQ(c_0,u_d,z,v_pt,U_cap,C,Qz)\
+    if(v_pt < `VPT_thresh) begin\
+        `QJMOD(c_0,u_d,z,2.4,v_pt,U_cap,C,Qz)\
+    end else begin\
+        `QJMODF(c_0,u_d,z,2.4,U_cap,C,Qz)\
+    end
+
+
+// A CALCULATION NEEDED FOR COLLECTOR MINORITY CHARGE FORMULATION
+// INPUT:
+//  zb,zl       : zeta_b and zeta_l (model parameters, TED 10/96)
+//  w           : normalized injection width
+// OUTPUT:
+// hicfcio      : function of equation (2.1.17-10)
+`define HICFCI(zb,zl,w,hicfcio,dhicfcio_dw)\
+    z       = zb*w;\
+    lnzb    = ln(1+zb*w);\
+    if(z > 1.0e-6) begin\
+        x               = 1.0+z;\
+        a               = x*x;\
+        a2              = 0.250*(a*(2.0*lnzb-1.0)+1.0);\
+        a3              = (a*x*(3.0*lnzb-1.0)+1.0)/9.0;\
+        r               = zl/zb;\
+        hicfcio         = ((1.0-r)*a2+r*a3)/zb;\
+        dhicfcio_dw     = ((1.0-r)*x+r*a)*lnzb;\
+    end else begin\
+        a               = z*z;\
+        a2              = 3.0+z-0.25*a+0.10*z*a;\
+        a3              = 2.0*z+0.75*a-0.20*a*z;\
+        hicfcio         = (zb*a2+zl*a3)*w*w/6.0;\
+        dhicfcio_dw     = (1+zl*w)*(1+z)*lnzb;\
+    end
+
+
+// NEEDED TO CALCULATE WEIGHTED ICCR COLLECTOR MINORITY CHARGE
+// INPUT:
+//  z : zeta_b or zeta_l
+//  w : normalized injection width
+// OUTPUT:
+//  hicfcto     : output
+//  dhicfcto_dw : derivative of output wrt w
+`define HICFCT(z,w,hicfcto,dhicfcto_dw)\
+    a = z*w;\
+    lnz = ln(1+z*w);\
+    if (a > 1.0e-6) begin\
+        hicfcto     = (a - lnz)/z;\
+        dhicfcto_dw = a / (1.0 + a);\
+    end else begin\
+        hicfcto     = 0.5 * a * w;\
+        dhicfcto_dw = a;\
+    end
+
+
+// COLLECTOR CURRENT SPREADING CALCULATION
+// collector minority charge incl. 2D/3D current spreading (TED 10/96)
+// INPUT:
+//  Ix                          : forward transport current component (itf)
+//  I_CK                        : critical current
+//  FFT_pcS                     : dependent on fthc and thcs (parameters)
+// IMPLICIT INPUT:
+//  ahc, latl, latb             : model parameters
+//  VT                          : thermal voltage
+// OUTPUT:
+//  Q_fC, Q_CT: actual and ICCR (weighted) hole charge
+//  T_fC, T_cT: actual and ICCR (weighted) transit time
+//  Derivative dfCT_ditf not properly implemented yet
+`define HICQFC(Ix,I_CK,FFT_pcS,Q_fC,Q_CT,T_fC,T_cT)\
+    Q_fC            = FFT_pcS*Ix;\
+    FCa             = 1.0-I_CK/Ix;\
+    FCrt            = sqrt(FCa*FCa+ahc);\
+    FCa_ck          = 1.0-(FCa+FCrt)/(1.0+sqrt(1.0+ahc));\
+    FCdaick_ditf    = (FCa_ck-1.0)*(1-FCa)/(FCrt*Ix);\
+    if(latb > latl) begin\
+        FCz             = latb-latl;\
+        FCxl            = 1.0+latl;\
+        FCxb            = 1.0+latb;\
+        if(latb > 0.01) begin\
+            FCln            = ln(FCxb/FCxl);\
+            FCa1            = exp((FCa_ck-1.0)*FCln);\
+            FCd_a           = 1.0/(latl-FCa1*latb);\
+            FCw             = (FCa1-1.0)*FCd_a;\
+            FCdw_daick      = -FCz*FCa1*FCln*FCd_a*FCd_a;\
+            FCa1            = ln((1.0+latb*FCw)/(1.0+latl*FCw));\
+            FCda1_dw        = latb/(1.0+latb*FCw) - latl/(1.0+latl*FCw);\
+        end else begin\
+            FCf1            = 1.0-FCa_ck;\
+            FCd_a           = 1.0/(1.0+FCa_ck*latb);\
+            FCw             = FCf1*FCd_a;\
+            FCdw_daick      = -1.0*FCd_a*FCd_a*FCxb*FCd_a;\
+            FCa1            = FCz*FCw;\
+            FCda1_dw        = FCz;\
+        end\
+        FCf_CT          = 2.0/FCz;\
+        FCw2            = FCw*FCw;\
+        FCf1            = latb*latl*FCw*FCw2/3.0+(latb+latl)*FCw2/2.0+FCw;\
+        FCdf1_dw        = latb*latl*FCw2 + (latb+latl)*FCw + 1.0;\
+        `HICFCI(latb,latl,FCw,FCf2,FCdf2_dw)\
+        `HICFCI(latl,latb,FCw,FCf3,FCdf3_dw)\
+        FCf_ci          = FCf_CT*(FCa1*FCf1-FCf2+FCf3);\
+        FCdfc_dw        = FCf_CT*(FCa1*FCdf1_dw+FCda1_dw*FCf1-FCdf2_dw+FCdf3_dw);\
+        FCdw_ditf       = FCdw_daick*FCdaick_ditf;\
+        FCdfc_ditf      = FCdfc_dw*FCdw_ditf;\
+        if(flcomp == 0.0 || flcomp == 2.1) begin\
+            `HICFCT(latb,FCw,FCf2,FCdf2_dw)\
+            `HICFCT(latl,FCw,FCf3,FCdf3_dw)\
+            FCf_CT          = FCf_CT*(FCf2-FCf3);\
+            FCdfCT_dw       = FCf_CT*(FCdf2_dw-FCdf3_dw);\
+            FCdfCT_ditf     = FCdfCT_dw*FCdw_ditf;\
+        end else begin\
+            FCf_CT          = FCf_ci;\
+            FCdfCT_ditf     = FCdfc_ditf;\
+        end\
+    end else begin\
+        if(latb > 0.01) begin\
+            FCd_a           = 1.0/(1.0+FCa_ck*latb);\
+            FCw             = (1.0-FCa_ck)*FCd_a;\
+            FCdw_daick      = -(1.0+latb)*FCd_a*FCd_a;\
+        end else begin\
+            FCw             = 1.0-FCa_ck-FCa_ck*latb;\
+            FCdw_daick      = -(1.0+latb);\
+        end\
+        FCw2            = FCw*FCw;\
+        FCz             = latb*FCw;\
+        FCz_1           = 1.0+FCz;\
+        FCd_f           = 1.0/(FCz_1);\
+        FCf_ci          = FCw2*(1.0+FCz/3.0)*FCd_f;\
+        FCdfc_dw        = 2.0*FCw*(FCz_1+FCz*FCz/3.0)*FCd_f*FCd_f;\
+        FCdw_ditf       = FCdw_daick*FCdaick_ditf;\
+        FCdfc_ditf      = FCdfc_dw*FCdw_ditf;\
+        if(flcomp == 0.0 || flcomp == 2.1) begin\
+            if (FCz > 0.001) begin\
+                FCf_CT          = 2.0*(FCz_1*ln(FCz_1)-FCz)/(latb*latb*FCz_1);\
+                FCdfCT_dw       = 2.0*FCw*FCd_f*FCd_f;\
+            end else begin\
+                FCf_CT          = FCw2*(1.0-FCz/3.0)*FCd_f;\
+                FCdfCT_dw       = 2.0*FCw*(1.0-FCz*FCz/3.0)*FCd_f*FCd_f;\
+            end\
+            FCdfCT_ditf     = FCdfCT_dw*FCdw_ditf;\
+        end else begin\
+            FCf_CT          = FCf_ci;\
+            FCdfCT_ditf     = FCdfc_ditf;\
+        end\
+    end\
+    Q_CT    = Q_fC*FCf_CT;\
+    Q_fC    = Q_fC*FCf_ci;\
+    T_fC    = FFT_pcS*(FCf_ci+Ix*FCdfc_ditf);\
+    T_cT    = FFT_pcS*(FCf_CT+Ix*FCdfCT_ditf);
+
+// TRANSIT-TIME AND STORED MINORITY CHARGE
+// INPUT:
+//  itf         : forward transport current
+//  I_CK        : critical current
+//  T_f         : transit time    \
+//  Q_f         : minority charge / for low current
+// IMPLICIT INPUT:
+//  tef0, gtfe, fthc, thcs, ahc, latl, latb     : model parameters
+// OUTPUT:
+//  T_f         : transit time    \
+//  Q_f         : minority charge / transient analysis
+//  T_fT        : transit time    \
+//  Q_fT        : minority charge / ICCR (transfer current)
+//  Q_bf        : excess base charge
+`define HICQFF(itf,I_CK,T_f,Q_f,T_fT,Q_fT,Q_bf)\
+    if(itf < 1.0e-6*I_CK) begin\
+        Q_fT            = Q_f;\
+        T_fT            = T_f;\
+    end else begin\
+        FFa             = I_CK/itf;\
+        FFd_TfE         = tef0_t*exp(-gtfe*ln(FFa));\
+        FFd_QfE         = FFd_TfE*itf/(gtfe+1.0);\
+        FFT_fbS         = (1.0-fthc)*thcs_t;\
+        FFx             = 1.0-FFa;\
+        FFs             = sqrt(FFx*FFx+ahc);\
+        FFw             = (FFx+FFs)/(1.0+sqrt(1.0+ahc));\
+        FFw_2           = FFw*FFw;\
+        FFd_QfB         = FFT_fbS*itf*FFw_2;\
+        Q_bf            = FFd_QfB;\
+        FFa_w           = FFw_2*(1.0+2.0*FFa/FFs);\
+        FFd_TfB         = FFT_fbS*FFa_w;\
+        FFT_pcS         = fthc*thcs_t;\
+        if(latb <= 0.0 && latl <= 0.0) begin\
+            FFQ_fC        = FFT_pcS*itf*FFw_2;\
+            FFT_fC        = FFT_pcS*FFa_w;\
+            FFQ_cT        = FFQ_fC;\
+            FFT_cT        = FFT_fC;\
+        end else begin\
+            `HICQFC(itf,I_CK,FFT_pcS,FFQ_fC,FFQ_cT,FFT_fC,FFT_cT)\
+        end\
+        Q_f             = Q_f+FFd_QfB;\
+        T_f             = T_f+FFd_TfB;\
+        Q_fT            = Q_f+hfe*FFd_QfE+hfc*FFQ_cT;\
+        T_fT            = T_f+hfe*FFd_TfE+hfc*FFT_cT;\
+        Q_f             = Q_f+FFd_QfE+FFQ_fC;\
+        T_f             = T_f+FFd_TfE+FFT_fC;\
+    end
+
+
+
+
+// IDEAL DIODE (WITHOUT CAPACITANCE):
+// conductance calculation not required
+// INPUT:
+//  IS, IST     : saturation currents (model parameter related)
+//  UM1         : ideality factor
+//  U           : branch voltage
+// IMPLICIT INPUT:
+//  VT          : thermal voltage
+// OUTPUT:
+//  Iz          : diode current
+`define HICDIO(IS,IST,UM1,U,Iz)\
+    DIOY    = U/(UM1*VT);\
+    if (IS > 0.0) begin\
+        if (DIOY > `Dexp_lim) begin\
+            le      = (1 + (DIOY - `Dexp_lim));\
+            DIOY    = `Dexp_lim;\
+        end else begin\
+            le      = 1;\
+        end\
+        le      = le*limexp(DIOY);\
+        Iz      = IST*(le-1.0);\
+        if(DIOY <= -14.0) begin\
+            Iz      = -IST;\
+        end\
+    end else begin\
+        Iz      = 0.0;\
+    end
+
+
+
+// TEMPERATURE UPDATE OF JUNCTION CAPACITANCE RELATED PARAMETERS
+// INPUT:
+//  mostly model parameters
+//  x           : zero bias junction capacitance
+//  y           : junction built-in potencial
+//  z           : grading co-efficient
+//  w           : ratio of maximum to zero-bias value of capacitance or punch-through voltage
+//  is_al       : condition factor to check what "w" stands for
+//  vgeff       : band-gap voltage
+// IMPLICIT INPUT:
+//  VT          : thermal voltage
+//  vt0,qtt0,ln_qtt0,mg : other model variables
+// OUTPUT:
+//  c_j_t               : temperature update of "c_j"
+//  vd_t                : temperature update of "vd0"
+//  w_t                 : temperature update of "w"
+`define TMPHICJ(c_j,vd0,z,w,is_al,vgeff,c_j_t,vd_t,w_t)\
+    if (c_j > 0.0) begin\
+        vdj0    = 2*vt0*ln(exp(vd0*0.5/vt0)-exp(-0.5*vd0/vt0));\
+        vdjt    = vdj0*qtt0+vgeff*(1-qtt0)-mg*VT*ln_qtt0;\
+        vdt     = vdjt+2*VT*ln(0.5*(1+sqrt(1+4*exp(-vdjt/VT))));\
+        vd_t    = vdt;\
+        c_j_t   = c_j*exp(z*ln(vd0/vd_t));\
+        if (is_al == 1) begin\
+            w_t = w*vd_t/vd0;\
+        end else begin\
+            w_t = w;\
+        end\
+    end else begin\
+        c_j_t   = c_j;\
+        vd_t    = vd0;\
+        w_t     = w;\
+    end
+
+    
+    
+module hic2_full (c,b,e,s,tnode);
+
+//Node definitions
+
+inout           c,b,e,s,tnode;
+electrical      c,b,e,s,ci,ei,bp,bi,si;
+electrical	xf1,xf2;
+electrical      xf;  //RC nw
+
+electrical      tnode;
+electrical 	    n1,n2;
+
+//Branch definitions
+branch          (b,bp)          br_bbp_i;
+branch          (b,bp)          br_bbp_v;
+branch          (ci,c)          br_cic_i;
+branch          (ci,c)          br_cic_v;
+branch          (ei,e)          br_eie_i;
+branch          (ei,e)          br_eie_v;
+branch          (bp,bi)         br_bpbi_i;
+branch          (bp,bi)         br_bpbi_v;
+branch          (si,s)          br_sis_i;
+branch          (si,s)          br_sis_v;
+branch          (bi,ei)         br_biei;
+branch          (bi,ci)         br_bici;
+branch          (ci,bi)         br_cibi;
+branch          (ci,ei)         br_ciei;
+branch          (ei,ci)         br_eici;
+branch          (bp,e)          br_bpe;
+branch          (b,e)           br_be;
+branch          (bp,ei)         br_bpei;
+branch          (bp,ci)         br_bpci;
+branch          (b,ci)          br_bci;
+branch          (si,ci)         br_sici;
+branch          (bp,si)         br_bpsi;
+branch          (tnode )        br_sht;
+
+//Phase network for ITF
+branch		(xf1 )		br_bxf1;
+branch		(xf1 )		br_cxf1;
+branch		(xf2 )		br_bxf2;
+branch		(xf2 )		br_cxf2;
+
+//Phase network for QF
+
+branch    (xf )     br_bxf;  //for RC nw
+branch    (xf )     br_cxf;  //for RC nw
+
+//Noise
+
+branch 		(n1 ) 	b_n1;
+branch 		(n2 ) 	b_n2;	
+	
+
+
+// -- ###########################################################
+// -- ###########     Parameters initialization  ################
+// -- ###########################################################
+
+
+//Transfer current
+parameter real c10      = 2.0E-30       from [0:1]      `ATTR(info="GICCR constant" unit="A^2s");
+parameter real qp0      = 2.0E-14       from (0:1]      `ATTR(info="Zero-bias hole charge" unit="Coul");
+parameter real ich      = 0.0           from [0:inf)    `ATTR(info="High-current correction for 2D and 3D effects" unit="A"); //`0' signifies infinity
+parameter real hfe      = 1.0           from [0:inf]    `ATTR(info="Emitter minority charge weighting factor in HBTs");
+parameter real hfc      = 1.0           from [0:inf]    `ATTR(info="Collector minority charge weighting factor in HBTs");
+parameter real hjei     = 1.0           from [0:100]    `ATTR(info="B-E depletion charge weighting factor in HBTs");
+parameter real hjci     = 1.0           from [0:100]    `ATTR(info="B-C depletion charge weighting factor in HBTs");
+
+//Base-Emitter diode currents
+parameter real ibeis    = 1.0E-18       from [0:1]      `ATTR(info="Internal B-E saturation current" unit="A");
+parameter real mbei     = 1.0           from (0:10]     `ATTR(info="Internal B-E current ideality factor");
+parameter real ireis    = 0.0           from [0:1]      `ATTR(info="Internal B-E recombination saturation current" unit="A");
+parameter real mrei     = 2.0           from (0:10]     `ATTR(info="Internal B-E recombination current ideality factor");
+parameter real ibeps    = 0.0           from [0:1]      `ATTR(info="Peripheral B-E saturation current" unit="A");
+parameter real mbep     = 1.0           from (0:10]     `ATTR(info="Peripheral B-E current ideality factor");
+parameter real ireps    = 0.0           from [0:1]      `ATTR(info="Peripheral B-E recombination saturation current" unit="A");
+parameter real mrep     = 2.0           from (0:10]     `ATTR(info="Peripheral B-E recombination current ideality factor");
+parameter real mcf      = 1.0           from (0:10]     `ATTR(info="Non-ideality factor for III-V HBTs");
+
+//Transit time for excess recombination current at b-c barrier
+parameter real tbhrec   = 0.0           from [0:inf)    `ATTR(info="Base current recombination time constant at B-C barrier for high forward injection" unit="s");
+
+//Base-Collector diode currents
+parameter real ibcis    = 1.0E-16       from [0:1.0]    `ATTR(info="Internal B-C saturation current" unit="A");
+parameter real mbci     = 1.0           from (0:10]     `ATTR(info="Internal B-C current ideality factor");
+parameter real ibcxs    = 0.0           from [0:1.0]    `ATTR(info="External B-C saturation current" unit="A");
+parameter real mbcx     = 1.0           from (0:10]     `ATTR(info="External B-C current ideality factor");
+
+//Base-Emitter tunneling current
+parameter real ibets    = 0.0           from [0:1]      `ATTR(info="B-E tunneling saturation current" unit="A");
+parameter real abet     = 40            from [0:inf)    `ATTR(info="Exponent factor for tunneling current");
+parameter integer tunode= 1             from [0:1]      `ATTR(info="Specifies the base node connection for the tunneling current"); // =1 signifies perimeter node
+
+//Base-Collector avalanche current
+parameter real favl     = 0.0           from [0:inf)    `ATTR(info="Avalanche current factor" unit="1/V");
+parameter real qavl     = 0.0           from [0:inf)    `ATTR(info="Exponent factor for avalanche current" unit="Coul");
+parameter real alfav    = 0.0                           `ATTR(info="Relative TC for FAVL" unit="1/K");
+parameter real alqav    = 0.0                           `ATTR(info="Relative TC for QAVL" unit="1/K");
+
+//Series resistances
+parameter real rbi0     = 0.0           from [0:inf)    `ATTR(info="Zero bias internal base resistance" unit="Ohm");
+parameter real rbx      = 0.0           from [0:inf)    `ATTR(info="External base series resistance" unit="Ohm");
+parameter real fgeo     = 0.6557        from [0:inf]    `ATTR(info="Factor for geometry dependence of emitter current crowding");
+parameter real fdqr0    = 0.0           from [-0.5:100]    `ATTR(info="Correction factor for modulation by B-E and B-C space charge layer");
+parameter real fcrbi    = 0.0           from [0:1]      `ATTR(info="Ratio of HF shunt to total internal capacitance (lateral NQS effect)");
+parameter real fqi      = 1.0           from [0:1]      `ATTR(info="Ration of internal to total minority charge");
+parameter real re       = 0.0           from [0:inf)    `ATTR(info="Emitter series resistance" unit="Ohm");
+parameter real rcx      = 0.0           from [0:inf)    `ATTR(info="External collector series resistance" unit="Ohm");
+
+//Substrate transistor
+parameter real itss     = 0.0           from [0:1.0]    `ATTR(info="Substrate transistor transfer saturation current" unit="A");
+parameter real msf      = 1.0           from (0:10]     `ATTR(info="Forward ideality factor of substrate transfer current");
+parameter real iscs     = 0.0           from [0:1.0]    `ATTR(info="C-S diode saturation current" unit="A");
+parameter real msc      = 1.0           from (0:10]     `ATTR(info="Ideality factor of C-S diode current");
+parameter real tsf      = 0.0           from [0:inf)    `ATTR(info="Transit time for forward operation of substrate transistor" unit="s");
+
+//Intra-device substrate coupling
+parameter real rsu      = 0.0           from [0:inf)    `ATTR(info="Substrate series resistance" unit="Ohm");
+parameter real csu      = 0.0           from [0:inf)    `ATTR(info="Substrate shunt capacitance" unit="F");
+
+//Depletion Capacitances
+parameter real cjei0    = 1.0E-20       from [0:inf)    `ATTR(info="Internal B-E zero-bias depletion capacitance" unit="F");
+parameter real vdei     = 0.9           from (0:10]     `ATTR(info="Internal B-E built-in potential" unit="V");
+parameter real zei      = 0.5	          from (0:1]      `ATTR(info="Internal B-E grading coefficient");
+parameter real ajei     = 2.5           from [1:inf)    `ATTR(info="Ratio of maximum to zero-bias value of internal B-E capacitance");
+parameter real cjep0    = 1.0E-20       from [0:inf)    `ATTR(info="Peripheral B-E zero-bias depletion capacitance" unit="F");
+parameter real vdep     = 0.9           from (0:10]     `ATTR(info="Peripheral B-E built-in potential" unit="V");
+parameter real zep      = 0.5           from (0:1]      `ATTR(info="Peripheral B-E grading coefficient");
+parameter real ajep     = 2.5           from [1:inf)    `ATTR(info="Ratio of maximum to zero-bias value of peripheral B-E capacitance");
+parameter real cjci0    = 1.0E-20       from [0:inf)    `ATTR(info="Internal B-C zero-bias depletion capacitance" unit="F");
+parameter real vdci     = 0.7           from (0:10]     `ATTR(info="Internal B-C built-in potential" unit="V");
+parameter real zci      = 0.4           from (0:1]      `ATTR(info="Internal B-C grading coefficient");
+parameter real vptci    = 100           from (0:100]    `ATTR(info="Internal B-C punch-through voltage" unit="V");
+parameter real cjcx0    = 1.0E-20       from [0:inf)    `ATTR(info="External B-C zero-bias depletion capacitance" unit="F");
+parameter real vdcx     = 0.7           from (0:10]     `ATTR(info="External B-C built-in potential" unit="V");
+parameter real zcx      = 0.4           from (0:1]      `ATTR(info="External B-C grading coefficient");
+parameter real vptcx    = 100           from (0:100]    `ATTR(info="External B-C punch-through voltage" unit="V");
+parameter real fbcpar   = 0.0           from [0:1]      `ATTR(info="Partitioning factor of parasitic B-C cap");
+parameter real fbepar   = 1.0           from [0:1]      `ATTR(info="Partitioning factor of parasitic B-E cap");
+parameter real cjs0     = 0.0           from [0:inf)    `ATTR(info="C-S zero-bias depletion capacitance" unit="F");
+parameter real vds      = 0.6           from (0:10]     `ATTR(info="C-S built-in potential" unit="V");
+parameter real zs       = 0.5           from (0:1]      `ATTR(info="C-S grading coefficient");
+parameter real vpts     = 100           from (0:100]    `ATTR(info="C-S punch-through voltage" unit="V"); 
+
+//Diffusion Capacitances
+parameter real t0       = 0.0           from [0:inf)    `ATTR(info="Low current forward transit time at VBC=0V" unit="s");
+parameter real dt0h     = 0.0           from (-inf:inf) `ATTR(info="Time constant for base and B-C space charge layer width modulation" unit="s");
+parameter real tbvl     = 0.0           from [0:inf)    `ATTR(info="Time constant for modelling carrier jam at low VCE" unit="s");
+parameter real tef0     = 0.0           from [0:inf)    `ATTR(info="Neutral emitter storage time" unit="s");
+parameter real gtfe     = 1.0           from (0:10]     `ATTR(info="Exponent factor for current dependence of neutral emitter storage time");
+parameter real thcs     = 0.0           from [0:inf)    `ATTR(info="Saturation time constant at high current densities" unit="s");
+parameter real ahc      = 0.1           from (0:10]     `ATTR(info="Smoothing factor for current dependence of base and collector transit time");
+parameter real fthc     = 0.0           from [0:1]      `ATTR(info="Partitioning factor for base and collector portion");
+parameter real rci0     = 150           from (0:inf)    `ATTR(info="Internal collector resistance at low electric field" unit="Ohm");
+parameter real vlim     = 0.5           from (0:10]     `ATTR(info="Voltage separating ohmic and saturation velocity regime" unit="V");
+parameter real vces     = 0.1           from [0:1]      `ATTR(info="Internal C-E saturation voltage" unit="V");
+parameter real vpt      = 100.0         from (0:inf]    `ATTR(info="Collector punch-through voltage" unit="V"); // `0' signifies infinity
+parameter real tr       = 0.0           from [0:inf)    `ATTR(info="Storage time for inverse operation" unit="s");
+  
+//Isolation Capacitances
+parameter real cbepar   = 0.0           from [0:inf)    `ATTR(info="Total parasitic B-E capacitance" unit="F");
+parameter real cbcpar   = 0.0           from [0:inf)    `ATTR(info="Total parasitic B-C capacitance" unit="F");
+
+//Non-quasi-static Effect
+parameter real alqf     = 0.0           from [0:1]      `ATTR(info="Factor for additional delay time of minority charge");
+parameter real alit     = 0.0           from [0:1]      `ATTR(info="Factor for additional delay time of transfer current");
+parameter integer flnqs = 0             from [0:1]      `ATTR(info="Flag for turning on and off of vertical NQS effect");
+  
+//Noise
+parameter real kf       = 0.0           from [0:inf)    `ATTR(info="Flicker noise coefficient");
+parameter real af       = 2.0           from (0:10]     `ATTR(info="Flicker noise exponent factor");
+parameter integer cfbe  = -1            from [-2:-1]    `ATTR(info="Flag for determining where to tag the flicker noise source");
+
+
+//Lateral Geometry Scaling (at high current densities)
+parameter real latb     = 0.0           from [0:inf)    `ATTR(info="Scaling factor for collector minority charge in direction of emitter width");
+parameter real latl     = 0.0           from [0:inf)    `ATTR(info="Scaling factor for collector minority charge in direction of emitter length");
+
+//Temperature dependence
+parameter real vgb      = 1.17          from (0:10]     `ATTR(info="Bandgap voltage extrapolated to 0 K" unit="V");
+parameter real alt0     = 0.0                           `ATTR(info="First order relative TC of parameter T0" unit="1/K");
+parameter real kt0      = 0.0                           `ATTR(info="Second order relative TC of parameter T0");
+parameter real zetaci   = 0.0           from [-10:10]   `ATTR(info="Temperature exponent for RCI0");
+parameter real alvs     = 0.0                           `ATTR(info="Relative TC of saturation drift velocity" unit="1/K");
+parameter real alces    = 0.0                           `ATTR(info="Relative TC of VCES" unit="1/K");
+parameter real zetarbi  = 0.0           from [-10:10]   `ATTR(info="Temperature exponent of internal base resistance");
+parameter real zetarbx  = 0.0           from [-10:10]   `ATTR(info="Temperature exponent of external base resistance");
+parameter real zetarcx  = 0.0           from [-10:10]   `ATTR(info="Temperature exponent of external collector resistance");
+parameter real zetare   = 0.0           from [-10:10]   `ATTR(info="Temperature exponent of emitter resistance");
+parameter real zetacx   = 1.0           from [-10:10]   `ATTR(info="Temperature exponent of mobility in substrate transistor transit time");
+parameter real vge      = 1.17          from (0:10]     `ATTR(info="Effective emitter bandgap voltage" unit="V");
+parameter real vgc      = 1.17          from (0:10]     `ATTR(info="Effective collector bandgap voltage" unit="V");
+parameter real vgs      = 1.17          from (0:10]     `ATTR(info="Effective substrate bandgap voltage" unit="V");
+parameter real f1vg     =-1.02377e-4                    `ATTR(info="Coefficient K1 in T-dependent band-gap equation");
+parameter real f2vg     = 4.3215e-4                     `ATTR(info="Coefficient K2 in T-dependent band-gap equation");
+parameter real zetact   = 3.0           from [-10:10]   `ATTR(info="Exponent coefficient in transfer current temperature dependence");
+parameter real zetabet  = 3.5           from [-10:10]   `ATTR(info="Exponent coefficient in B-E junction current temperature dependence");
+parameter real alb      = 0.0                           `ATTR(info="Relative TC of forward current gain for V2.1 model" unit="1/K");
+
+//Self-Heating
+parameter integer flsh  = 0             from [0:2]      `ATTR(info="Flag for turning on and off self-heating effect");
+parameter real rth      = 0.0           from [0:inf)    `ATTR(info="Thermal resistance" unit="K/W");
+parameter real cth      = 0.0           from [0:inf)    `ATTR(info="Thermal capacitance" unit="J/W");
+
+//Compatibility with V2.1
+parameter real flcomp = 0.0             from [0:inf)    `ATTR(info="Flag for compatibility with v2.1 model (0=v2.1)");
+
+//Circuit simulator specific parameters
+parameter real tnom     = 27.0                          `ATTR(info="Temperature at which parameters are specified" unit="C");
+parameter real dt       = 0.0                           `ATTR(info="Temperature change w.r.t. chip temperature for particular transistor" unit="K");
+
+
+//
+//======================== Transistor model formulation ===================
+//
+
+    //Declaration of variables
+
+    real _circuit_gmin;
+
+    //Temperature and drift
+    real VT,Tdev,qtt0,ln_qtt0,r_VgVT,V_gT,dT,k;
+    real ireis_t,ibeis_t,ibcxs_t,ibcis_t,iscs_t,cjci0_t;
+    real cjs0_t,rci0_t,vlim_t,vces_t,thcs_t,tef0_t,rbi0_t;
+    real rbx_t,rcx_t,re_t,t0_t,vdei_t,vdci_t,vpts_t,itss_t,tsf_t;
+    real c10_t,cjei0_t,qp0_t,vdcx_t,vptcx_t,cjcx01_t,cjcx02_t;
+    real qjcx0_t_i,qjcx0_t_ii,cratio_t,c_dummy;
+    real ibeps_t,ireps_t,cjep0_t;
+    real ajei_t,qavl_t,favl_t,ibets_t,abet_t,vptci_t,vdep_t,ajep_t,zetatef;
+    real k1,k2,dvg0,vge_t,vgb_t,vgbe_t,vds_t,vt0,Tnom,Tamb,a,avs;
+    real zetabci,zetabcxt,zetasct,vgbe0,mg,vgb_t0,vge_t0,vgbe_t0,vgbc0,vgsc0;
+    real cbcpar1,cbcpar2,cbepar2,cbepar1,Oich,Ovpt,Otbhrec;
+
+    //Charges, capacitances and currents
+    real Qjci,Qjei,Qjep;
+    real it,ibei,irei,ibci,ibep,irep,ibh_rec;
+    real Qdei,Qdci,qrbi;
+    real ibet,iavl;
+    real ijbcx,ijsc,Qjs,HSUM,HSI_Tsu,Qdsu;
+
+    //Base resistance and self-heating power
+    real rbi,pterm;
+
+    //Variables for macro TMPHICJ
+    real  vdj0,vdjt,vdt;
+
+    //Model initialization
+    real k10,k20,C_1;
+
+    //Model evaluation
+    real Cjci,Cjcit,cc,Cjei,Cjep;
+    real itf,itr,Tf,Tr,VT_f,i_0f,i_0r,a_bpt,Q_0,Q_p,Q_bpt;
+    real Orci0_t,b_q,Q_fC,T_fC,T_cT,I_Tf1,T_f0,Q_fT,T_fT,Q_bf;
+    real ICKa,d1;
+    real A,a_h,Q_pT,d_Q,d_Q0;
+    real Qf,Cdei,Qr,Cdci,Crbi;
+    real ick,vc,vceff,cjcx01,cjcx02,HSa,HSb;
+    integer l_it;
+
+    //Variables for macros
+    real  DIOY,le;//HICDIO
+    real  FFT_fbS,FFa,FFx,FFs,FFw,FFw_2,FFd_QfB,FFd_TfB,FFT_pcS,FFQ_fC,FFT_fC,FFQ_cT,FFT_cT,FFd_TfE,FFd_QfE,FFa_w;//HICQFF
+    real  FCz,FCw2,FCf1,FCf2,FCf3,FCf_ci,FCz_1,FCa1,FCa_ck,FCxl,FCxb;//HICQFC
+    real  FCd_a,FCdaick_ditf,FCa,FCw,FCdw_daick,FCdfc_dw,FCdw_ditf,FCdfc_ditf,FCf_CT,FCdfCT_ditf,FCrt,FCln,lnz,FCda1_dw,FCdf1_dw,FCdf2_dw,FCdf3_dw,FCd_f,FCdfCT_dw;//HICQFC
+    real  Dz_r,Dv_p,DV_f,DC_max,DC_c,Da,Dv_e,De,De_1,Dv_j1,Dv_r,De_2,Dv_j2,Dv_j4,DQ_j1,DQ_j2,DQ_j3,DCln1,DCln2,Dz1,Dzr1,DC_j1,DC_j2,DC_j3;//QJMOD
+    real  DFV_f,DFv_e,DFv_j,DFb,DFQ_j,DFs_q,DFs_q2,DFdvj_dv,DFC_j1;//QJMODF
+    real  z,a2,a3,r,x;//HICFCI
+    real zb,zl,lnzb,w,hicfcio,dhicfcio_dw; //HICFCT
+
+    //Noise
+    real fourkt,twoq,flicker_Pwr;
+    real thermal_Rbx,thermal_Rbi,thermal_Rcx,thermal_Re,betad,betan,betadin,betadc,icn,icn1,icn2;
+
+    //NQS
+    real Ixf1,Ixf2,Qxf1,Qxf2,Vxf1,Vxf2,Itxf,TD1,Qdeix;
+    real T, Vxf, Ixf, Qxf,fact;
+
+    real pocce,czz;
+    real Qz_nom,f_QR,ETA,Qz0,fQz;
+    real v_bord,v_q,U0,av,avl;
+    real cV_f,cv_e,cs_q,cs_q2,cv_j,cdvj_dv;
+    real a_eg,ab,aa;
+
+    //end of variables
+
+analog begin
+
+`MODEL begin : Model_initialization
+
+    Tnom    = tnom+`P_CELSIUS0;
+    Tamb    = $temperature;
+    vt0     = `P_K*Tnom /`P_Q;
+    k10     = f1vg*Tnom*ln(Tnom);
+    k20     = f2vg*Tnom;
+    avs     = alvs*Tnom;
+    vgb_t0  = vgb+k10+k20;
+    vge_t0  = vge+k10+k20;
+    vgbe_t0 = (vgb_t0+vge_t0)/2;
+    vgbe0   = (vgb+vge)/2;
+    vgbc0   = (vgb+vgc)/2;
+    vgsc0   = (vgs+vgc)/2;
+    mg      = 3-`P_Q*f1vg/`P_K;
+    zetabci = mg+1-zetaci;
+    zetabcxt= mg+1-zetacx;
+    zetasct = mg-1.5;
+
+    //Depletion capacitance splitting at b-c junction
+    //Capacitances at peripheral and external base node
+    C_1    = (1.0-fbcpar)*(cjcx0+cbcpar);
+    if (C_1 >= cbcpar) begin
+        cbcpar1 = cbcpar;
+        cbcpar2 = 0.0;
+        cjcx01  = C_1-cbcpar;
+        cjcx02  = cjcx0-cjcx01;
+    end else begin
+        cbcpar1 = C_1;
+        cbcpar2 = cbcpar-cbcpar1;
+        cjcx01  = 0.0;
+        cjcx02  = cjcx0;
+    end
+
+    //Parasitic b-e capacitance partitioning: No temperature dependence
+    cbepar2 = fbepar*cbepar;
+    cbepar1 = cbepar-cbepar2;
+
+    //Avoid devide-by-zero and define infinity other way
+    //High current correction for 2D and 3D effects
+    if (ich != 0.0) begin
+        Oich    = 1.0/ich;
+    end else begin
+        Oich    = 0.0;
+    end
+
+    //Base current recombination time constant at b-c barrier
+    if (tbhrec != 0.0) begin
+        Otbhrec = 1.0/tbhrec;
+    end else begin
+        Otbhrec = 0.0;
+    end
+
+    // Temperature and resulting parameter drift
+    if (flsh==0 || rth < `MIN_R) begin : Thermal_updat_without_self_heating
+        Tdev    = Tamb+dt;
+        if(Tdev < `TMIN + 273.15) begin
+            Tdev = `TMIN + 273.15;
+        end else begin
+            if (Tdev > `TMAX + 273.15) begin
+                Tdev = `TMAX + 273.15;
+            end
+        end
+        VT      = `P_K*Tdev /`P_Q;
+        dT      = Tdev-Tnom;
+        qtt0    = Tdev/Tnom;
+        ln_qtt0 = ln(qtt0);
+        k1      = f1vg*Tdev*ln(Tdev);
+        k2      = f2vg*Tdev;
+        vgb_t   = vgb+k1+k2;
+        vge_t   = vge+k1+k2;
+        vgbe_t  = (vgb_t+vge_t)/2;
+
+        //Internal b-e junction capacitance
+        `TMPHICJ(cjei0,vdei,zei,ajei,1,vgbe0,cjei0_t,vdei_t,ajei_t)
+
+        if (flcomp == 0.0 || flcomp == 2.1) begin
+            V_gT     = 3.0*VT*ln_qtt0 + vgb*(qtt0-1.0);
+            r_VgVT   = V_gT/VT;
+            //Internal b-e diode saturation currents
+            a        = mcf*r_VgVT/mbei - alb*dT;
+            ibeis_t  = ibeis*exp(a);
+            a        = mcf*r_VgVT/mrei - alb*dT;
+            ireis_t  = ireis*exp(a);
+            a        = mcf*r_VgVT/mbep - alb*dT;
+            //Peripheral b-e diode saturation currents
+            ibeps_t  = ibeps*exp(a);
+            a        = mcf*r_VgVT/mrep - alb*dT;
+            ireps_t  = ireps*exp(a);
+            //Internal b-c diode saturation current
+            a       = r_VgVT/mbci;
+            ibcis_t = ibcis*exp(a);
+            //External b-c diode saturation currents
+            a       = r_VgVT/mbcx;
+            ibcxs_t = ibcxs*exp(a);
+            //Saturation transfer current for substrate transistor
+            a       = r_VgVT/msf;
+            itss_t  = itss*exp(a);
+            //Saturation current for c-s diode
+            a       = r_VgVT/msc;
+            iscs_t  = iscs*exp(a);
+            //Zero bias hole charge
+            a        = vdei_t/vdei;
+            qp0_t    = qp0*(1.0+0.5*zei*(1.0-a));
+            //Voltage separating ohmic and saturation velocity regime
+            a = vlim*(1.0-alvs*dT)*exp(zetaci*ln_qtt0);
+            k = (a-VT)/VT;
+            if (k < `LN_EXP_LIMIT) begin
+                vlim_t = VT + VT*ln(1.0+exp(k));
+            end else begin
+                vlim_t = a;
+            end
+            //Neutral emitter storage time
+            a        = 1.0+alb*dT;
+            k        = 0.5*(a+sqrt(a*a+0.01));
+            tef0_t   = tef0*qtt0/k;
+        end else begin
+            //Internal b-e diode saturation currents
+            ibeis_t  = ibeis*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1));
+            ireis_t  = ireis*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1));
+            //Peripheral b-e diode saturation currents
+            ibeps_t  = ibeps*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1));
+            ireps_t  = ireps*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1));
+            //Internal b-c diode saturation currents
+            ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1));
+            //External b-c diode saturation currents
+            ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1));
+            //Saturation transfer current for substrate transistor
+            itss_t  = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1));
+            //Saturation current for c-s diode
+            iscs_t  = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1));
+            //Zero bias hole charge
+            a       = exp(zei*ln(vdei_t/vdei));
+            qp0_t   = qp0*(2.0-a);
+            //Voltage separating ohmic and saturation velocity regime
+            vlim_t  = vlim*exp((zetaci-avs)*ln_qtt0);
+            //Neutral emitter storage time
+            zetatef = zetabet-zetact-0.5;
+            dvg0    = vgb-vge;
+            tef0_t  = tef0*exp(zetatef*ln_qtt0-dvg0/VT*(qtt0-1));
+        end
+
+        //GICCR prefactor
+        c10_t   = c10*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1));
+
+        // Low-field internal collector resistance
+        rci0_t  = rci0*exp(zetaci*ln_qtt0);
+
+        //Voltage separating ohmic and saturation velocity regime
+        //vlim_t  = vlim*exp((zetaci-avs)*ln_qtt0);
+
+        //Internal c-e saturation voltage
+        vces_t  = vces*(1+alces*dT);
+
+
+        //Internal b-c diode saturation current
+        //ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1));
+
+        //Internal b-c junction capacitance
+        `TMPHICJ(cjci0,vdci,zci,vptci,0,vgbc0,cjci0_t,vdci_t,vptci_t)
+
+        //Low-current forward transit time
+        t0_t    = t0*(1+alt0*dT+kt0*dT*dT);
+
+        //Saturation time constant at high current densities
+        thcs_t  = thcs*exp((zetaci-1)*ln_qtt0);
+
+
+        //Avalanche caurrent factors
+        favl_t  = favl*exp(alfav*dT);
+        qavl_t  = qavl*exp(alqav*dT);
+
+        //Zero bias internal base resistance
+        rbi0_t  = rbi0*exp(zetarbi*ln_qtt0);
+
+
+        //Peripheral b-e junction capacitance
+        `TMPHICJ(cjep0,vdep,zep,ajep,1,vgbe0,cjep0_t,vdep_t,ajep_t)
+
+        //Tunneling current factors
+        begin : HICTUN_T
+//            real a_eg,ab,aa;
+            ab      = 1.0;
+            aa      = 1.0;
+            a_eg=vgbe_t0/vgbe_t;
+            if(tunode==1 && cjep0 > 0.0 && vdep >0.0) begin
+                ab      = (cjep0_t/cjep0)*sqrt(a_eg)*vdep_t*vdep_t/(vdep*vdep);
+                aa      = (vdep/vdep_t)*(cjep0/cjep0_t)*pow(a_eg,-1.5);
+            end else if (tunode==0 && cjei0 > 0.0 && vdei >0.0) begin
+                ab      = (cjei0_t/cjei0)*sqrt(a_eg)*vdei_t*vdei_t/(vdei*vdei);
+                aa      = (vdei/vdei_t)*(cjei0/cjei0_t)*pow(a_eg,-1.5);
+            end
+            ibets_t = ibets*ab;
+            abet_t  = abet*aa;
+        end
+
+
+        //Temperature mapping for tunneling current is done inside HICTUN
+
+        `TMPHICJ(1.0,vdcx,zcx,vptcx,0,vgbc0,cratio_t,vdcx_t,vptcx_t)
+        cjcx01_t=cratio_t*cjcx01;
+        cjcx02_t=cratio_t*cjcx02;
+
+
+        //External b-c diode saturation currents
+        //ibcxs_t       = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1));
+
+
+        //Constant external series resistances
+        rcx_t   = rcx*exp(zetarcx*ln_qtt0);
+        rbx_t   = rbx*exp(zetarbx*ln_qtt0);
+        re_t    = re*exp(zetare*ln_qtt0);
+
+        //Forward transit time in substrate transistor
+        tsf_t   = tsf*exp((zetacx-1.0)*ln_qtt0);
+
+        //Capacitance for c-s junction
+        `TMPHICJ(cjs0,vds,zs,vpts,0,vgsc0,cjs0_t,vds_t,vpts_t)
+
+    end // of Thermal_update_without_self_heating
+
+end     //of Model_initialization
+
+if (flsh!=0 && rth >= `MIN_R) begin : Thermal_update_with_self_heating
+    Tdev    = Tamb+dt+V(br_sht);
+    // Limit temperature to avoid FPEs in equations
+    if(Tdev < `TMIN + 273.15) begin
+        Tdev = `TMIN + 273.15;
+    end else begin
+        if (Tdev > `TMAX + 273.15) begin
+            Tdev = `TMAX + 273.15;
+        end
+    end
+    VT      = `P_K*Tdev /`P_Q;
+    dT      = Tdev-Tnom;
+    qtt0    = Tdev/Tnom;
+    ln_qtt0 = ln(qtt0);
+    k1      = f1vg*Tdev*ln(Tdev);
+    k2      = f2vg*Tdev;
+    vgb_t   = vgb+k1+k2;
+    vge_t   = vge+k1+k2;
+    vgbe_t  = (vgb_t+vge_t)/2;
+
+    //Internal b-e junction capacitance
+    `TMPHICJ(cjei0,vdei,zei,ajei,1,vgbe0,cjei0_t,vdei_t,ajei_t)
+
+    if (flcomp == 0.0 || flcomp == 2.1) begin
+        V_gT     = 3.0*VT*ln_qtt0 + vgb*(qtt0-1.0);
+        r_VgVT   = V_gT/VT;
+        //Internal b-e diode saturation currents
+        a        = mcf*r_VgVT/mbei - alb*dT;
+        ibeis_t  = ibeis*exp(a);
+        a        = mcf*r_VgVT/mrei - alb*dT;
+        ireis_t  = ireis*exp(a);
+        a        = mcf*r_VgVT/mbep - alb*dT;
+        //Peripheral b-e diode saturation currents
+        ibeps_t  = ibeps*exp(a);
+        a        = mcf*r_VgVT/mrep - alb*dT;
+        ireps_t  = ireps*exp(a);
+        //Internal b-c diode saturation current
+        a       = r_VgVT/mbci;
+        ibcis_t = ibcis*exp(a);
+        //External b-c diode saturation currents
+        a       = r_VgVT/mbcx;
+        ibcxs_t = ibcxs*exp(a);
+        //Saturation transfer current for substrate transistor
+        a       = r_VgVT/msf;
+        itss_t  = itss*exp(a);
+        //Saturation current for c-s diode
+        a       = r_VgVT/msc;
+        iscs_t  = iscs*exp(a);
+        //Zero bias hole charge
+        a        = vdei_t/vdei;
+        qp0_t    = qp0*(1.0+0.5*zei*(1.0-a));
+        //Voltage separating ohmic and saturation velocity regime
+        a = vlim*(1.0-alvs*dT)*exp(zetaci*ln_qtt0);
+        k = (a-VT)/VT;
+        if (k < `LN_EXP_LIMIT) begin
+            vlim_t = VT + VT*ln(1.0+exp(k));
+        end else begin
+            vlim_t = a;
+        end
+        //Neutral emitter storage time
+        a        = 1.0+alb*dT;
+        k        = 0.5*(a+sqrt(a*a+0.01));
+        tef0_t   = tef0*qtt0/k;
+    end else begin
+        //Internal b-e diode saturation currents
+        ibeis_t  = ibeis*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1));
+        ireis_t  = ireis*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1));
+        //Peripheral b-e diode saturation currents
+        ibeps_t  = ibeps*exp(zetabet*ln_qtt0+vge/VT*(qtt0-1));
+        ireps_t  = ireps*exp(0.5*mg*ln_qtt0+0.5*vgbe0/VT*(qtt0-1));
+        //Internal b-c diode saturation currents
+        ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1));
+        //External b-c diode saturation currents
+        ibcxs_t = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1));
+        //Saturation transfer current for substrate transistor
+        itss_t  = itss*exp(zetasct*ln_qtt0+vgc/VT*(qtt0-1));
+        //Saturation current for c-s diode
+        iscs_t  = iscs*exp(zetasct*ln_qtt0+vgs/VT*(qtt0-1));
+        //Zero bias hole charge
+        a       = exp(zei*ln(vdei_t/vdei));
+        qp0_t   = qp0*(2.0-a);
+        //Voltage separating ohmic and saturation velocity regime
+        vlim_t  = vlim*exp((zetaci-avs)*ln_qtt0);
+        //Neutral emitter storage time
+        zetatef = zetabet-zetact-0.5;
+        dvg0    = vgb-vge;
+        tef0_t  = tef0*exp(zetatef*ln_qtt0-dvg0/VT*(qtt0-1));
+    end
+
+    //GICCR prefactor
+    c10_t   = c10*exp(zetact*ln_qtt0+vgb/VT*(qtt0-1));
+
+    // Low-field internal collector resistance
+    rci0_t  = rci0*exp(zetaci*ln_qtt0);
+
+    //Voltage separating ohmic and saturation velocity regime
+    //vlim_t  = vlim*exp((zetaci-avs)*ln_qtt0);
+
+    //Internal c-e saturation voltage
+    vces_t  = vces*(1+alces*dT);
+
+
+    //Internal b-c diode saturation current
+    //ibcis_t = ibcis*exp(zetabci*ln_qtt0+vgc/VT*(qtt0-1));
+
+    //Internal b-c junction capacitance
+    `TMPHICJ(cjci0,vdci,zci,vptci,0,vgbc0,cjci0_t,vdci_t,vptci_t)
+
+    //Low-current forward transit time
+    t0_t    = t0*(1+alt0*dT+kt0*dT*dT);
+
+    //Saturation time constant at high current densities
+    thcs_t  = thcs*exp((zetaci-1)*ln_qtt0);
+
+
+    //Avalanche caurrent factors
+    favl_t  = favl*exp(alfav*dT);
+    qavl_t  = qavl*exp(alqav*dT);
+
+    //Zero bias internal base resistance
+    rbi0_t  = rbi0*exp(zetarbi*ln_qtt0);
+
+
+    //Peripheral b-e junction capacitance
+    `TMPHICJ(cjep0,vdep,zep,ajep,1,vgbe0,cjep0_t,vdep_t,ajep_t)
+
+    //Tunneling current factors
+    if (V(br_bpei) < 0.0 || V(br_biei) < 0.0) begin : HICTUN_T
+//        real a_eg,ab,aa;
+        ab      = 1.0;
+        aa      = 1.0;
+        a_eg=vgbe_t0/vgbe_t;
+        if(tunode==1 && cjep0 > 0.0 && vdep >0.0) begin
+            ab      = (cjep0_t/cjep0)*sqrt(a_eg)*vdep_t*vdep_t/(vdep*vdep);
+            aa      = (vdep/vdep_t)*(cjep0/cjep0_t)*pow(a_eg,-1.5);
+        end else if (tunode==0 && cjei0 > 0.0 && vdei >0.0) begin
+            ab      = (cjei0_t/cjei0)*sqrt(a_eg)*vdei_t*vdei_t/(vdei*vdei);
+            aa      = (vdei/vdei_t)*(cjei0/cjei0_t)*pow(a_eg,-1.5);
+        end
+        ibets_t = ibets*ab;
+        abet_t  = abet*aa;
+    end
+
+
+    //Temperature mapping for tunneling current is done inside HICTUN
+
+    `TMPHICJ(1.0,vdcx,zcx,vptcx,0,vgbc0,cratio_t,vdcx_t,vptcx_t)
+    cjcx01_t=cratio_t*cjcx01;
+    cjcx02_t=cratio_t*cjcx02;
+
+
+    //External b-c diode saturation currents
+    //ibcxs_t       = ibcxs*exp(zetabcxt*ln_qtt0+vgc/VT*(qtt0-1));
+
+
+    //Constant external series resistances
+    rcx_t   = rcx*exp(zetarcx*ln_qtt0);
+    rbx_t   = rbx*exp(zetarbx*ln_qtt0);
+    re_t    = re*exp(zetare*ln_qtt0);
+
+    //Forward transit time in substrate transistor
+    tsf_t   = tsf*exp((zetacx-1.0)*ln_qtt0);
+
+    //Capacitance for c-s junction
+    `TMPHICJ(cjs0,vds,zs,vpts,0,vgsc0,cjs0_t,vds_t,vpts_t)
+
+end     //of Thermal_update_with_self_heating
+
+
+begin : Model_evaluation
+
+    //Intrinsic transistor
+    //Internal base currents across b-e junction
+    `HICDIO(ibeis,ibeis_t,mbei,V(br_biei),ibei)
+    `HICDIO(ireis,ireis_t,mrei,V(br_biei),irei)
+
+    //HICCR: begin
+
+    //Inverse of low-field internal collector resistance: needed in HICICK
+    Orci0_t = 1.0/rci0_t;
+
+    //Initialization
+    //Transfer current, minority charges and transit times
+
+    Tr      = tr;
+    VT_f    = mcf*VT;
+    i_0f    = c10_t * limexp(V(br_biei)/VT_f);
+    i_0r    = c10_t * limexp(V(br_bici)/VT);
+
+    //Internal b-e and b-c junction capacitances and charges
+    //`QJMODF(cjei0_t,vdei_t,zei,ajei_t,V(br_biei),Qjei)
+    //Cjei    = ddx(Qjei,V(bi));
+    `QJMODF(cjei0_t,vdei_t,zei,ajei_t,V(br_biei),Cjei,Qjei)
+
+    //`HICJQ(cjci0_t,vdci_t,zci,vptci_t,V(br_bici),Qjci)
+    //Cjci    = ddx(Qjci,V(bi));
+    `HICJQ(cjci0_t,vdci_t,zci,vptci_t,V(br_bici),Cjci,Qjci)
+
+    //Hole charge at low bias
+    a_bpt   = 0.05;
+    Q_0     = qp0_t + hjei*Qjei + hjci*Qjci;
+    Q_bpt   = a_bpt*qp0_t;
+    b_q     = Q_0/Q_bpt-1;
+    Q_0     = Q_bpt*(1+(b_q +sqrt(b_q*b_q+1.921812))/2);
+
+    //Transit time calculation at low current density
+    if(cjci0_t > 0.0) begin : CJMODF
+//        real cV_f,cv_e,cs_q,cs_q2,cv_j,cdvj_dv;
+        cV_f    = vdci_t*(1.0-exp(-ln(2.4)/zci));
+        cv_e    = (cV_f-V(br_bici))/VT;
+        cs_q    = sqrt(cv_e*cv_e+1.921812);
+        cs_q2   = (cv_e+cs_q)*0.5;
+        cv_j    = cV_f-VT*cs_q2;
+        cdvj_dv = cs_q2/cs_q;
+        Cjcit   = cjci0_t*exp(-zci*ln(1.0-cv_j/vdci_t))*cdvj_dv+2.4*cjci0_t*(1.0-cdvj_dv);
+    end else begin
+        Cjcit   = 0.0;
+    end
+    if(Cjcit > 0.0) begin
+        cc      = cjci0_t/Cjcit;
+    end else begin
+        cc      = 1.0;
+    end
+    T_f0    = t0_t+dt0h*(cc-1.0)+tbvl*(1/cc-1.0);
+
+    //Effective collector voltage
+    vc      = V(br_ciei)-vces_t;
+
+    //Critical current for onset of high-current effects
+    begin : HICICK
+        Ovpt    = 1.0/vpt;
+        a       = vc/VT;
+        d1      = a-1;
+        vceff   = (1.0+((d1+sqrt(d1*d1+1.921812))/2))*VT;
+        a       = vceff/vlim_t;
+        ick     = vceff*Orci0_t/sqrt(1.0+a*a);
+        ICKa    = (vceff-vlim_t)*Ovpt;
+        ick     = ick*(1.0+0.5*(ICKa+sqrt(ICKa*ICKa+1.0e-3)));
+    end
+
+    //Initial formulation of forward and reverse component of transfer current
+    Q_p     = Q_0;
+    if (T_f0 > 0.0 || Tr > 0.0) begin
+        A       = 0.5*Q_0;
+        Q_p     = A+sqrt(A*A+T_f0*i_0f+Tr*i_0r);
+    end
+    I_Tf1   =i_0f/Q_p;
+    a_h     = Oich*I_Tf1;
+    itf     = I_Tf1*(1.0+a_h);
+    itr     = i_0r/Q_p;
+
+    //Initial formulation of forward transit time, diffusion, GICCR and excess b-c charge
+    Q_bf    = 0.0;
+    Tf      = T_f0;
+    Qf      = T_f0*itf;
+    `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf)
+
+    //Initial formulation of reverse diffusion charge
+    Qr      = Tr*itr;
+
+    //Preparation for iteration to get total hole charge and related variables
+    l_it    = 0;
+    if(Qf > `RTOLC*Q_p || a_h > `RTOLC) begin
+        //Iteration for Q_pT is required for improved initial solution
+        Qf      = sqrt(T_f0*itf*Q_fT);
+        Q_pT    = Q_0+Qf+Qr;
+        d_Q     = Q_pT;
+        while (abs(d_Q) >= `RTOLC*abs(Q_pT) && l_it <= `l_itmax) begin
+            d_Q0    = d_Q;
+            I_Tf1   = i_0f/Q_pT;
+            a_h     = Oich*I_Tf1;
+            itf     = I_Tf1*(1.0+a_h);
+            itr     = i_0r/Q_pT;
+            Tf      = T_f0;
+            Qf      = T_f0*itf;
+            `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf)
+            Qr      = Tr*itr;
+            if(Oich == 0.0) begin
+                a       = 1.0+(T_fT*itf+Qr)/Q_pT;
+            end else begin
+                a       = 1.0+(T_fT*I_Tf1*(1.0+2.0*a_h)+Qr)/Q_pT;
+            end
+            d_Q     = -(Q_pT-(Q_0+Q_fT+Qr))/a;
+            //Limit maximum change of Q_pT
+            a       = abs(0.3*Q_pT);
+            if(abs(d_Q) > a) begin
+                if (d_Q>=0) begin
+                    d_Q     = a;
+                end else begin
+                    d_Q     = -a;
+                end
+            end
+            Q_pT    = Q_pT+d_Q;
+            l_it    = l_it+1;
+        end //while
+
+        I_Tf1   = i_0f/Q_pT;
+        a_h     = Oich*I_Tf1;
+        itf     = I_Tf1*(1.0+a_h);
+        itr     = i_0r/Q_pT;
+
+        //Final transit times, charges and transport current components
+        Tf      = T_f0;
+        Qf      = T_f0*itf;
+        `HICQFF(itf,ick,Tf,Qf,T_fT,Q_fT,Q_bf)
+        Qr      = Tr*itr;
+
+    end //if
+
+    //NQS effect implemented with LCR networks
+    //Once the delay in ITF is considered, IT_NQS is calculated afterwards
+
+    it      = itf-itr;
+
+    //Diffusion charges for further use
+    Qdei    = Qf;
+    Qdci    = Qr;
+
+
+    //High-frequency emitter current crowding (lateral NQS)
+    Cdei    = -1*ddx(Qdei,V(ei));
+    Cdci    = -1*ddx(Qdci,V(ci));
+    Crbi    = fcrbi*(Cjei+Cjci+Cdei+Cdci);
+    qrbi    = Crbi*V(br_bpbi_v);
+
+//    qrbi	= fcrbi*(Qjei+Qjci+Qdei+Qdci);
+
+    //HICCR: end
+
+    //Internal base current across b-c junction
+    `HICDIO(ibcis,ibcis_t,mbci,V(br_bici),ibci)
+
+    //Avalanche current
+    if((V(br_bici) < 0.0) && (favl_t > 0.0) && (cjci0_t > 0.0)) begin : HICAVL
+//        real v_bord,v_q,U0,av,avl;
+        v_bord  = vdci_t-V(br_bici);
+        v_q     = qavl_t/Cjci;
+        U0      = qavl_t/cjci0_t;
+        if(v_bord > U0) begin
+                av      = favl_t*exp(-v_q/U0);
+                avl     = av*(U0+(1.0+v_q/U0)*(v_bord-U0));
+        end else begin
+            avl     = favl_t*v_bord*exp(-v_q/v_bord);
+        end
+        iavl    = itf*avl;
+    end else begin
+        iavl    = 0.0;
+    end
+
+    //Excess base current from recombination at the b-c barrier
+    ibh_rec = Q_bf*Otbhrec;
+
+    //Internal base resistance
+    if(rbi0_t > 0.0) begin : HICRBI
+//        real Qz_nom,f_QR,ETA,Qz0,fQz;
+        // Consideration of conductivity modulation
+        // To avoid convergence problem hyperbolic smoothing used
+        f_QR    = (1+fdqr0)*qp0_t;
+        Qz0     = Qjei+Qjci+Qf;
+        Qz_nom  = 1+Qz0/f_QR;
+        fQz     = 0.5*(Qz_nom+sqrt(Qz_nom*Qz_nom+0.01));
+        rbi     = rbi0_t/fQz;
+        // Consideration of emitter current crowding
+        if( ibei > 0.0) begin
+            ETA     = rbi*ibei*fgeo/VT;
+            if(ETA < 1.0e-6) begin
+                rbi     = rbi*(1.0-0.5*ETA);
+            end else begin
+                rbi     = rbi*ln(1.0+ETA)/ETA;
+            end
+        end
+        // Consideration of peripheral charge
+        if(Qf > 0.0) begin
+            rbi     = rbi*(Qjei+Qf*fqi)/(Qjei+Qf);
+        end
+    end else begin
+        rbi     = 0.0;
+    end
+
+    //Base currents across peripheral b-e junction
+    `HICDIO(ibeps,ibeps_t,mbep,V(br_bpei),ibep)
+    `HICDIO(ireps,ireps_t,mrep,V(br_bpei),irep)
+
+    //Peripheral b-e junction capacitance and charge
+    `QJMODF(cjep0_t,vdep_t,zep,ajep_t,V(br_bpei),Cjep,Qjep)
+
+    //Tunelling current
+    if (V(br_bpei) <0.0 || V(br_biei) < 0.0) begin : HICTUN
+//        real pocce,czz;
+        if(tunode==1 && cjep0_t > 0.0 && vdep_t >0.0) begin
+            pocce   = exp((1-1/zep)*ln(Cjep/cjep0_t));
+            czz     = -(V(br_bpei)/vdep_t)*ibets_t*pocce;
+            ibet    = czz*exp(-abet_t/pocce);
+            end else if (tunode==0 && cjei0_t > 0.0 && vdei_t >0.0) begin
+                pocce   = exp((1-1/zei)*ln(Cjei/cjei0_t));
+                czz     = -(V(br_biei)/vdei_t)*ibets_t*pocce;
+                ibet    = czz*exp(-abet_t/pocce);
+            end else begin
+            ibet    = 0.0;
+        end
+    end else begin
+        ibet    = 0.0;
+    end
+
+
+    //Depletion capacitance and charge at peripheral b-c junction (bp,ci)
+    `HICJQ(cjcx02_t,vdcx_t,zcx,vptcx_t,V(br_bpci),c_dummy,qjcx0_t_ii)
+
+    //Base currents across peripheral b-c junction (bp,ci)
+    `HICDIO(ibcxs,ibcxs_t,mbcx,V(br_bpci),ijbcx)
+
+    //Depletion capacitance and charge at external b-c junction (b,ci)
+    `HICJQ(cjcx01_t,vdcx_t,zcx,vptcx_t,V(br_bci),c_dummy,qjcx0_t_i)
+
+    //Depletion substrate capacitance and charge at s-c junction (si,ci)
+    `HICJQ(cjs0_t,vds_t,zs,vpts_t,V(br_sici),c_dummy,Qjs)
+
+    //Parasitic substrate transistor transfer current and diffusion charge
+    if(itss > 0.0) begin : Sub_Transfer
+        HSUM    = msf*VT;
+        HSa     = limexp(V(br_bpci)/HSUM);
+        HSb     = limexp(V(br_sici)/HSUM);
+        HSI_Tsu = itss_t*(HSa-HSb);
+        if(tsf > 0.0) begin
+            Qdsu    = tsf_t*itss_t*HSa;
+        end else begin
+            Qdsu    = 0.0;
+        end
+    end else begin
+        HSI_Tsu = 0.0;
+        Qdsu    = 0.0;
+    end
+
+    // Current gain computation for correlated noise implementation
+    betad=ibei;
+    if (betad > 0.0) begin
+        betadin=betad;
+        betan=it;
+        betadc=betan/betad;
+    end else begin
+        betadc=0.0;
+    end
+
+    //Diode current for s-c junction (si,ci)
+    `HICDIO(iscs,iscs_t,msc,V(br_sici),ijsc)
+
+    //Self-heating calculation
+    if (flsh == 1 && rth >= `MIN_R) begin
+        pterm   =  V(br_ciei)*it + (vdci_t-V(br_bici))*iavl;
+    end else if (flsh == 2 && rth >= `MIN_R) begin
+        pterm   =  V(br_ciei)*it + (vdci_t-V(br_bici))*iavl + ibei*V(br_biei) + ibci*V(br_bici) + ibep*V(br_bpei) + ijbcx*V(br_bpci) + ijsc*V(br_sici);
+        if (rbi >= `MIN_R) begin
+            pterm   = pterm + V(br_bpbi_i)*V(br_bpbi_i)/rbi;
+        end
+        if (re_t >= `MIN_R) begin
+            pterm   = pterm + V(br_eie_i)*V(br_eie_i)/re_t;
+        end
+        if (rcx_t >= `MIN_R) begin
+            pterm   = pterm + V(br_cic_i)*V(br_cic_i)/rcx_t;
+        end
+        if (rbx_t >= `MIN_R) begin
+            pterm   = pterm + V(br_bbp_i)*V(br_bbp_i)/rbx_t;
+        end
+    end
+
+    Itxf	= itf;
+    Qdeix	= Qdei;
+    // Excess Phase calculation
+
+    if (flnqs != 0 && Tf != 0) begin
+        Vxf1	= V(br_bxf1);
+        Vxf2	= V(br_bxf2);
+
+        Ixf1	=  (Vxf2-itf)/Tf*t0;
+        Ixf2	=  (Vxf2-Vxf1)/Tf*t0;
+        Qxf1	=  alit*Vxf1*t0;
+        Qxf2	=  alit*Vxf2/3*t0;
+        Itxf	=  Vxf2;
+
+        Vxf	= V(br_bxf);               //for RC nw
+        fact  = t0/Tf;                 //for RC nw  
+        Ixf   = (Vxf - Qdei)*fact;     //for RC nw
+        Qxf   = alqf*Vxf*t0;           //for RC nw
+        Qdeix = Vxf;                   //for RC nw
+    end else begin
+        Ixf1	=  V(br_bxf1);
+        Ixf2	=  V(br_bxf2);
+        Qxf1	=  0;
+        Qxf2	=  0;
+
+        Ixf   = V(br_bxf);     
+        Qxf   = 0;
+    end
+
+end     //of Model_evaluation
+
+begin : Load_sources
+
+    I(br_biei)      <+ _circuit_gmin*V(br_biei);
+    I(br_bici)      <+ _circuit_gmin*V(br_bici);
+
+    I(br_bci)       <+ ddt(qjcx0_t_i);
+    I(br_bci)       <+ ddt(cbcpar1*V(br_bci));
+    I(br_bpci)      <+ ddt(cbcpar2*V(br_bpci));
+    if (rbx >= `MIN_R) begin
+        I(br_bbp_i)     <+ V(br_bbp_i)/rbx_t;
+    end else begin
+//        V(br_bbp_v)     <+ 0.0;
+        I(br_bbp_i)     <+ V(br_bbp_i)/`MIN_R;
+    end
+    if(rbi0 >= `MIN_R) begin
+        I(br_bpbi_i)    <+ V(br_bpbi_i)/rbi;
+        I(br_bpbi_i)    <+ ddt(qrbi);
+    end else begin
+//        V(br_bpbi_v)    <+ 0.0;
+        I(br_bpbi_i)    <+ V(br_bpbi_i)/`MIN_R;
+    end
+    if (tunode==1.0) begin
+        I(br_bpei)      <+ -ibet;
+    end else begin
+        I(br_biei)      <+ -ibet;
+    end
+    I(br_bpei)      <+ ibep;
+    I(br_bpei)      <+ irep;
+    I(br_bpei)      <+ ddt(Qjep);
+    I(br_biei)      <+ ibei;
+    I(br_biei)      <+ irei;
+    I(br_biei)      <+ ibh_rec;
+    I(br_biei)      <+ ddt(Qdeix+Qjei);
+    I(br_bpsi)      <+ HSI_Tsu;
+    I(br_bpci)      <+ ijbcx;
+    I(br_bpci)      <+ ddt(qjcx0_t_ii+Qdsu);
+    I(br_be)        <+ ddt(cbepar1*V(br_be));
+    I(br_bpe)       <+ ddt(cbepar2*V(br_bpe));
+    I(br_bici)      <+ ibci-iavl;
+    I(br_bici)      <+ ddt(Qdci+Qjci);
+    I(br_sici)      <+ ijsc;
+    I(br_sici)      <+ ddt(Qjs);
+    I(br_ciei)      <+ Itxf;
+    I(br_eici)      <+ itr;
+    if (rcx >= `MIN_R) begin
+        I(br_cic_i)     <+ V(br_cic_i)/rcx_t;
+    end else begin
+//        V(br_cic_v)     <+ 0.0;
+        I(br_cic_i)     <+ V(br_cic_i)/`MIN_R;
+    end
+    if (re >= `MIN_R) begin
+        I(br_eie_i)     <+ V(br_eie_i)/re_t;
+    end else begin
+//        V(br_eie_v)     <+ 0.0;
+        I(br_eie_i)     <+ V(br_eie_i)/`MIN_R;
+    end
+    if(rsu >= `MIN_R) begin
+        I(br_sis_i)     <+ V(br_sis_i)/rsu;
+        I(br_sis_i)     <+ ddt(csu*V(br_sis_i));
+    end else begin
+//        V(br_sis_v)     <+ 0.0;
+        I(br_sis_i)     <+ V(br_sis_i)/`MIN_R;
+    end
+
+    // Following code is an intermediate solution (if branch contribution is not supported):
+    // ******************************************
+    if(flsh == 0 || rth < `MIN_R) begin
+          I(br_sht)       <+ V(br_sht)/`MIN_R;
+    end else begin
+          I(br_sht)       <+ V(br_sht)/rth-pterm;
+          I(br_sht)       <+ ddt(cth*V(br_sht));
+    end
+
+    // ******************************************
+
+    // For simulators having no problem with V(br_sht) <+ 0.0
+    // with external thermal node, follwing code may be used.
+    // Note that external thermal node should remain accessible
+    // even without self-heating.
+    // ********************************************
+    //if(flsh == 0 || rth < `MIN_R) begin
+    //    V(br_sht)       <+ 0.0;
+    //end else begin
+    //    I(br_sht)       <+ V(br_sht)/rth-pterm;
+    //    I(br_sht)       <+ ddt(cth*V(br_sht));
+    //end
+    // ********************************************
+
+    // NQS effect
+    I(br_bxf1) <+ Ixf1;
+    I(br_cxf1) <+ ddt(Qxf1);
+    I(br_bxf2) <+ Ixf2;
+    I(br_cxf2) <+ ddt(Qxf2);
+
+    I(br_bxf) <+  Ixf;         //for RC nw
+    I(br_cxf) <+  ddt(Qxf);    //for RC nw
+
+end //of Load_sources
+
+
+`NOISE begin : Noise_sources
+
+    //Thermal noise
+    fourkt  = 4.0 * `P_K * Tdev;
+    if(rbx >= `MIN_R) begin
+        I(br_bbp_i)     <+ white_noise(fourkt/rbx_t,    "thermal");
+    end
+    if(rbi0 >= `MIN_R) begin
+        I(br_bpbi_i)    <+ white_noise(fourkt/rbi,      "thermal");
+    end
+    if(rcx >= `MIN_R) begin
+        I(br_cic_i)     <+ white_noise(fourkt/rcx_t,    "thermal");
+    end
+    if(re >= `MIN_R) begin
+        I(br_eie_i)     <+ white_noise(fourkt/re_t,     "thermal");
+    end
+    if(rsu >= `MIN_R) begin
+        I(br_sis_i)     <+ white_noise(fourkt/rsu,      "thermal");
+    end
+
+    //Flicker noise : Fully correlated between the perimeter and internal base-node
+    flicker_Pwr     = kf*pow((ibei+ibep),af);
+    if (cfbe == -1) begin
+        I(br_biei)      <+ flicker_noise(flicker_Pwr,1.0);
+    end else begin
+        I(br_bpei)      <+ flicker_noise(flicker_Pwr,1.0);
+    end
+
+    //Shot noise
+
+    twoq    = 2.0 * `P_Q;
+    //     I(br_ciei)      <+ white_noise(twoq*it,         "shot");
+    I(br_cibi)      <+ white_noise(twoq*iavl,       "shot");
+
+    //     I(br_biei)      <+ white_noise(twoq*ibei,       "shot");
+
+    I(br_bici)      <+ white_noise(twoq*abs(ibci),  "shot");
+
+    I(br_bpei)      <+ white_noise(twoq*ibep,       "shot");
+
+    I(br_bpci)      <+ white_noise(twoq*abs(ijbcx), "shot");
+
+    I(br_sici)      <+ white_noise(twoq*abs(ijsc),  "shot");
+
+    // Code section for correlated noise
+    // Please turn-off this code section by "//" in order to run the code with Spectre
+
+//    I(b_n1)		<+ white_noise(2 * `P_Q * ibei,		"shot");
+//    I(b_n1)		<+ V(b_n1);
+//    I(b_n2) 		<+ white_noise(2 * `P_Q * it,		"shot");
+//    I(b_n2)		<+ V(b_n2);
+//
+//    I(bi,ei) 		<+ V(b_n1); 
+//    I(ci,ei) 		<+ V(b_n2)+ddt((betadc/2)*alit*Tf*alit*Tf*ddt(V(b_n2))); 
+//    I(ci,ei)		<+ betadc*ddt(-(Tf*alit)*V(b_n1));                       
+end     //of Noise_sources
+
+end //analog
+endmodule
diff --git a/src/spicelib/devices/bsim3soi_dd/BsimTerms_use b/src/spicelib/devices/bsim3soi_dd/BsimTerms_use
index 3cf683b6f..938ec7b36 100644
--- a/src/spicelib/devices/bsim3soi_dd/BsimTerms_use
+++ b/src/spicelib/devices/bsim3soi_dd/BsimTerms_use
@@ -1,29 +1,29 @@
-The terms under which the software is provided  are as the following.
-
-Software is distributed as is, completely without warranty or service
-support. The University of California and its employees are not liable
-for the condition or performance of the software.
-
-The University owns the copyright but shall not be liable for any
-infringement of copyright or other proprietary rights brought by third
-parties against the users of the software.
-
-The University of California hereby disclaims all implied warranties.
-
-The University of California grants the users the right to modify, copy,
-and redistribute the software and documentation, both within the user's
-organization and externally, subject to the following restrictions
-
-1. The users agree not to charge for the University of California code
-   itself but may charge for additions, extensions, or support.
-
-2. In any product based on the software, the users agree to acknowledge
-   the UC Berkeley BSIM Research Group that developed the software. This
-   acknowledgment shall appear in the product documentation.
-
-3. The users agree to obey all U.S. Government restrictions governing
-   redistribution or export of the software.
-
-4. The users agree to reproduce any copyright notice which appears on
-   the software on any copy or modification of such made available 
-   to others.
+The terms under which the software is provided  are as the following.
+
+Software is distributed as is, completely without warranty or service
+support. The University of California and its employees are not liable
+for the condition or performance of the software.
+
+The University owns the copyright but shall not be liable for any
+infringement of copyright or other proprietary rights brought by third
+parties against the users of the software.
+
+The University of California hereby disclaims all implied warranties.
+
+The University of California grants the users the right to modify, copy,
+and redistribute the software and documentation, both within the user's
+organization and externally, subject to the following restrictions
+
+1. The users agree not to charge for the University of California code
+   itself but may charge for additions, extensions, or support.
+
+2. In any product based on the software, the users agree to acknowledge
+   the UC Berkeley BSIM Research Group that developed the software. This
+   acknowledgment shall appear in the product documentation.
+
+3. The users agree to obey all U.S. Government restrictions governing
+   redistribution or export of the software.
+
+4. The users agree to reproduce any copyright notice which appears on
+   the software on any copy or modification of such made available 
+   to others.
diff --git a/src/spicelib/devices/bsim3soi_fd/BsimTerms_use b/src/spicelib/devices/bsim3soi_fd/BsimTerms_use
index 3cf683b6f..938ec7b36 100644
--- a/src/spicelib/devices/bsim3soi_fd/BsimTerms_use
+++ b/src/spicelib/devices/bsim3soi_fd/BsimTerms_use
@@ -1,29 +1,29 @@
-The terms under which the software is provided  are as the following.
-
-Software is distributed as is, completely without warranty or service
-support. The University of California and its employees are not liable
-for the condition or performance of the software.
-
-The University owns the copyright but shall not be liable for any
-infringement of copyright or other proprietary rights brought by third
-parties against the users of the software.
-
-The University of California hereby disclaims all implied warranties.
-
-The University of California grants the users the right to modify, copy,
-and redistribute the software and documentation, both within the user's
-organization and externally, subject to the following restrictions
-
-1. The users agree not to charge for the University of California code
-   itself but may charge for additions, extensions, or support.
-
-2. In any product based on the software, the users agree to acknowledge
-   the UC Berkeley BSIM Research Group that developed the software. This
-   acknowledgment shall appear in the product documentation.
-
-3. The users agree to obey all U.S. Government restrictions governing
-   redistribution or export of the software.
-
-4. The users agree to reproduce any copyright notice which appears on
-   the software on any copy or modification of such made available 
-   to others.
+The terms under which the software is provided  are as the following.
+
+Software is distributed as is, completely without warranty or service
+support. The University of California and its employees are not liable
+for the condition or performance of the software.
+
+The University owns the copyright but shall not be liable for any
+infringement of copyright or other proprietary rights brought by third
+parties against the users of the software.
+
+The University of California hereby disclaims all implied warranties.
+
+The University of California grants the users the right to modify, copy,
+and redistribute the software and documentation, both within the user's
+organization and externally, subject to the following restrictions
+
+1. The users agree not to charge for the University of California code
+   itself but may charge for additions, extensions, or support.
+
+2. In any product based on the software, the users agree to acknowledge
+   the UC Berkeley BSIM Research Group that developed the software. This
+   acknowledgment shall appear in the product documentation.
+
+3. The users agree to obey all U.S. Government restrictions governing
+   redistribution or export of the software.
+
+4. The users agree to reproduce any copyright notice which appears on
+   the software on any copy or modification of such made available 
+   to others.
diff --git a/src/spicelib/devices/bsim3soi_pd/BsimTerms_use b/src/spicelib/devices/bsim3soi_pd/BsimTerms_use
index 3cf683b6f..938ec7b36 100644
--- a/src/spicelib/devices/bsim3soi_pd/BsimTerms_use
+++ b/src/spicelib/devices/bsim3soi_pd/BsimTerms_use
@@ -1,29 +1,29 @@
-The terms under which the software is provided  are as the following.
-
-Software is distributed as is, completely without warranty or service
-support. The University of California and its employees are not liable
-for the condition or performance of the software.
-
-The University owns the copyright but shall not be liable for any
-infringement of copyright or other proprietary rights brought by third
-parties against the users of the software.
-
-The University of California hereby disclaims all implied warranties.
-
-The University of California grants the users the right to modify, copy,
-and redistribute the software and documentation, both within the user's
-organization and externally, subject to the following restrictions
-
-1. The users agree not to charge for the University of California code
-   itself but may charge for additions, extensions, or support.
-
-2. In any product based on the software, the users agree to acknowledge
-   the UC Berkeley BSIM Research Group that developed the software. This
-   acknowledgment shall appear in the product documentation.
-
-3. The users agree to obey all U.S. Government restrictions governing
-   redistribution or export of the software.
-
-4. The users agree to reproduce any copyright notice which appears on
-   the software on any copy or modification of such made available 
-   to others.
+The terms under which the software is provided  are as the following.
+
+Software is distributed as is, completely without warranty or service
+support. The University of California and its employees are not liable
+for the condition or performance of the software.
+
+The University owns the copyright but shall not be liable for any
+infringement of copyright or other proprietary rights brought by third
+parties against the users of the software.
+
+The University of California hereby disclaims all implied warranties.
+
+The University of California grants the users the right to modify, copy,
+and redistribute the software and documentation, both within the user's
+organization and externally, subject to the following restrictions
+
+1. The users agree not to charge for the University of California code
+   itself but may charge for additions, extensions, or support.
+
+2. In any product based on the software, the users agree to acknowledge
+   the UC Berkeley BSIM Research Group that developed the software. This
+   acknowledgment shall appear in the product documentation.
+
+3. The users agree to obey all U.S. Government restrictions governing
+   redistribution or export of the software.
+
+4. The users agree to reproduce any copyright notice which appears on
+   the software on any copy or modification of such made available 
+   to others.
diff --git a/src/xspice/examples/hybrid_models1_dc.deck b/src/xspice/examples/hybrid_models1_dc.deck
index 190fb0be6..837b8baa7 100644
--- a/src/xspice/examples/hybrid_models1_dc.deck
+++ b/src/xspice/examples/hybrid_models1_dc.deck
@@ -1,46 +1,46 @@
-Code Model Test - DC: d_osc, dac_bridge, adc_bridge
-*
-*
-*** analysis type ***
-.op
-*
-*** input sources ***
-v1 1 0 DC 2 
-*
-v2 2 0 DC 2
-*
-*** d_osc block ***
-a1 1 10 d_osc1 
-.model d_osc1 d_osc (cntl_array=[-1.0 0.0 1.0 2.0] 
-+                    freq_array=[100 100 1000 1000]
-+                    duty_cycle=0.5 init_phase=0.0
-+                    rise_delay=1.0e-6 fall_delay=2.0e-6)
-*
-*** dac_bridge block ***
-a2 [10] [20] dac_bridge1
-.model dac_bridge1 dac_bridge (out_low=0.5 out_high=4.5 out_undef=1.8
-+                              input_load=1.0e-12
-+                              t_rise=1.0e-6 t_fall=2.0e-6)
-*
-*
-*** adc_bridge block ***
-a3 [2] [30] adc_bridge1
-.model adc_bridge1 adc_bridge (in_low=0.7 in_high=2.4 
-+                              rise_delay=1.0e-12 fall_delay=2.0e-12)
-*
-*
-*
-*** resistors to ground ***
-r1 1 0 1k
-r2 2 0 1k
-*
-r20 20 0 1k
-*
-*
-.end
-
-
-
-
-
-
+Code Model Test - DC: d_osc, dac_bridge, adc_bridge
+*
+*
+*** analysis type ***
+.op
+*
+*** input sources ***
+v1 1 0 DC 2 
+*
+v2 2 0 DC 2
+*
+*** d_osc block ***
+a1 1 10 d_osc1 
+.model d_osc1 d_osc (cntl_array=[-1.0 0.0 1.0 2.0] 
++                    freq_array=[100 100 1000 1000]
++                    duty_cycle=0.5 init_phase=0.0
++                    rise_delay=1.0e-6 fall_delay=2.0e-6)
+*
+*** dac_bridge block ***
+a2 [10] [20] dac_bridge1
+.model dac_bridge1 dac_bridge (out_low=0.5 out_high=4.5 out_undef=1.8
++                              input_load=1.0e-12
++                              t_rise=1.0e-6 t_fall=2.0e-6)
+*
+*
+*** adc_bridge block ***
+a3 [2] [30] adc_bridge1
+.model adc_bridge1 adc_bridge (in_low=0.7 in_high=2.4 
++                              rise_delay=1.0e-12 fall_delay=2.0e-12)
+*
+*
+*
+*** resistors to ground ***
+r1 1 0 1k
+r2 2 0 1k
+*
+r20 20 0 1k
+*
+*
+.end
+
+
+
+
+
+
diff --git a/src/xspice/examples/initial_conditions.deck b/src/xspice/examples/initial_conditions.deck
index 610383625..f2ca5d9ff 100644
--- a/src/xspice/examples/initial_conditions.deck
+++ b/src/xspice/examples/initial_conditions.deck
@@ -1,19 +1,19 @@
-Capacitor and inductor with natural initial conditions
-*
-* This circuit contains a capacitor and an inductor with
-* initial conditions on them.  Each of the components
-* has a parallel resistor so that an exponential decay
-* of the initial condition occurs with a time constant of
-* 1 second.
-*
-.tran 0.1 5
-*
-a1 1 0 cap
-.model cap capacitor (c=1000uf ic=1)
-r1 1 0 1k
-*
-a2 2 0 ind
-.model ind inductor (l=1H ic=1)
-r2 2 0 1.0
-*
-.end
+Capacitor and inductor with natural initial conditions
+*
+* This circuit contains a capacitor and an inductor with
+* initial conditions on them.  Each of the components
+* has a parallel resistor so that an exponential decay
+* of the initial condition occurs with a time constant of
+* 1 second.
+*
+.tran 0.1 5
+*
+a1 1 0 cap
+.model cap capacitor (c=1000uf ic=1)
+r1 1 0 1k
+*
+a2 2 0 ind
+.model ind inductor (l=1H ic=1)
+r2 2 0 1.0
+*
+.end
diff --git a/src/xspice/examples/io_ordering.deck b/src/xspice/examples/io_ordering.deck
index 8cc245526..dea8459c2 100644
--- a/src/xspice/examples/io_ordering.deck
+++ b/src/xspice/examples/io_ordering.deck
@@ -1,17 +1,17 @@
-IO ordering
-*
-* This circuit contains a simple gain block.  The order of
-* the nodes listed on the instance line follows the order
-* of the connections defined in the 'ifspec.ifs' file for
-* the model.  Refer to /atesse-su/src/cml/gain/ifspec.ifs .
-*
-.tran 1e-5 1e-3
-*
-v1 1 0 0.0 sin(0 1 1k)
-r1 1 0 1k
-*
-a1 1 2 gain_block
-.model gain_block gain (gain=10)
-r2 2 0 1k
-*
-.end
+IO ordering
+*
+* This circuit contains a simple gain block.  The order of
+* the nodes listed on the instance line follows the order
+* of the connections defined in the 'ifspec.ifs' file for
+* the model.  Refer to /atesse-su/src/cml/gain/ifspec.ifs .
+*
+.tran 1e-5 1e-3
+*
+v1 1 0 0.0 sin(0 1 1k)
+r1 1 0 1k
+*
+a1 1 2 gain_block
+.model gain_block gain (gain=10)
+r2 2 0 1k
+*
+.end
diff --git a/src/xspice/examples/io_types.deck b/src/xspice/examples/io_types.deck
index 0d792ab73..ce443bf6f 100644
--- a/src/xspice/examples/io_types.deck
+++ b/src/xspice/examples/io_types.deck
@@ -1,34 +1,34 @@
-IO types
-*
-* This circuit contains a mix of input output types including
-* voltages, currents, digital signals, and user defined
-* signals.
-*
-.tran 1e-6 1e-4
-*
-v1  1 0  0.0 pulse(0 1 2e-5)
-r1  1 0  1k
-*
-abridge1  [1] [enable]  node_bridge1
-.model node_bridge1 adc_bridge
-*
-aclk  [enable clk] clk  nand
-.model nand d_nand (rise_delay=1e-5 fall_delay=1e-5)
-*
-abridge2  clk enable real_node1  node_bridge2
-.model node_bridge2 d_to_real (zero=-1 one=1)
-*
-again  real_node1 real_node2  times10
-.model times10 real_gain (gain=10)
-*
-abridge3  real_node2 analog_node  node_bridge3
-.model node_bridge3 real_to_v
-*
-rout  analog_node 0  1k
-*
-again %vnam v1 %i i_out gain_block
-.model gain_block gain (gain=10)
-ri_out i_out 0 1k
-*
-*
-.end
+IO types
+*
+* This circuit contains a mix of input output types including
+* voltages, currents, digital signals, and user defined
+* signals.
+*
+.tran 1e-6 1e-4
+*
+v1  1 0  0.0 pulse(0 1 2e-5)
+r1  1 0  1k
+*
+abridge1  [1] [enable]  node_bridge1
+.model node_bridge1 adc_bridge
+*
+aclk  [enable clk] clk  nand
+.model nand d_nand (rise_delay=1e-5 fall_delay=1e-5)
+*
+abridge2  clk enable real_node1  node_bridge2
+.model node_bridge2 d_to_real (zero=-1 one=1)
+*
+again  real_node1 real_node2  times10
+.model times10 real_gain (gain=10)
+*
+abridge3  real_node2 analog_node  node_bridge3
+.model node_bridge3 real_to_v
+*
+rout  analog_node 0  1k
+*
+again %vnam v1 %i i_out gain_block
+.model gain_block gain (gain=10)
+ri_out i_out 0 1k
+*
+*
+.end
diff --git a/src/xspice/examples/long_names.deck b/src/xspice/examples/long_names.deck
index 6a0fecada..fda6613f8 100644
--- a/src/xspice/examples/long_names.deck
+++ b/src/xspice/examples/long_names.deck
@@ -1,19 +1,19 @@
-Long names
-*
-* This circuit contains a sine wave source followed by a
-* gain block code model with a gain of 10.  Long names
-* are used for instances, models, and nodes.
-*
-.tran 1e-5 1e-3
-*
-v1_123456789_123456789_1234  1 0  0.0 sin(0 1 2k)
-*
-r1_123456789_123456789_1234  1 0  1k
-*
-a1_123456789_123456789_1234  1 out_123456789_123456789_1234
-+   gain_block_123456789_123456789_1234
-*
-.model gain_block_123456789_123456789_1234 gain (gain=10)
-r2_123456789_123456789_1234  out_123456789_123456789_1234 0  1k
-*
-.end
+Long names
+*
+* This circuit contains a sine wave source followed by a
+* gain block code model with a gain of 10.  Long names
+* are used for instances, models, and nodes.
+*
+.tran 1e-5 1e-3
+*
+v1_123456789_123456789_1234  1 0  0.0 sin(0 1 2k)
+*
+r1_123456789_123456789_1234  1 0  1k
+*
+a1_123456789_123456789_1234  1 out_123456789_123456789_1234
++   gain_block_123456789_123456789_1234
+*
+.model gain_block_123456789_123456789_1234 gain (gain=10)
+r2_123456789_123456789_1234  out_123456789_123456789_1234 0  1k
+*
+.end
diff --git a/src/xspice/examples/mixed_case.deck b/src/xspice/examples/mixed_case.deck
index 1a1006492..be044c7e6 100644
--- a/src/xspice/examples/mixed_case.deck
+++ b/src/xspice/examples/mixed_case.deck
@@ -1,15 +1,15 @@
-MiXeD CaSe
-*
-* This circuit contains a simple gain block to demonstrate
-* that the simulator deck parsing code is case-insensitive.
-*
-.TrAn 1E-5 1e-3
-*
-V1 1 0 0.0 sIn(0 1 1k)
-r1 1 0 1k
-*
-A1 1 2 GaIn_BlOcK
-.MODel gAiN_bLoCk GAin (gaIN=10)
-r2 2 0 1K
-*
-.eNd
+MiXeD CaSe
+*
+* This circuit contains a simple gain block to demonstrate
+* that the simulator deck parsing code is case-insensitive.
+*
+.TrAn 1E-5 1e-3
+*
+V1 1 0 0.0 sIn(0 1 1k)
+r1 1 0 1k
+*
+A1 1 2 GaIn_BlOcK
+.MODel gAiN_bLoCk GAin (gaIN=10)
+r2 2 0 1K
+*
+.eNd
diff --git a/src/xspice/examples/mixed_io_size.deck b/src/xspice/examples/mixed_io_size.deck
index 824cdeb4b..cc6bee565 100644
--- a/src/xspice/examples/mixed_io_size.deck
+++ b/src/xspice/examples/mixed_io_size.deck
@@ -1,33 +1,33 @@
-Mixed IO sizes
-*
-* This circuit contains a collection of digital and analog
-* models with saclar and vector inputs of varying sizes.
-*
-.tran 1e-5 1e-3
-*
-v1 1 0 0.0 pulse(0 1 1e-4)
-r1 1 0 1k
-*
-v2 2 0 0.0 sin(0 1 2k)
-r2 2 0 1k
-*
-abridge1 [1] [enable] atod
-.model atod adc_bridge
-*
-aosc [enable clk] clk nand
-.model nand d_nand (rise_delay=1e-4 fall_delay=1e-4)
-*
-ainv clk clk_bar inv
-.model inv d_inverter (rise_delay=1e-5 fall_delay=1e-5)
-*
-adac [clk clk_bar] [3 4] dac
-.model dac dac_bridge (t_rise=1e-5 t_fall=1e-5)
-*
-asum [1 2 3 4] 5 sum
-.model sum summer
-*
-r3 3 0 1k
-r4 4 0 1k
-r5 5 0 1k
-*
-.end
+Mixed IO sizes
+*
+* This circuit contains a collection of digital and analog
+* models with saclar and vector inputs of varying sizes.
+*
+.tran 1e-5 1e-3
+*
+v1 1 0 0.0 pulse(0 1 1e-4)
+r1 1 0 1k
+*
+v2 2 0 0.0 sin(0 1 2k)
+r2 2 0 1k
+*
+abridge1 [1] [enable] atod
+.model atod adc_bridge
+*
+aosc [enable clk] clk nand
+.model nand d_nand (rise_delay=1e-4 fall_delay=1e-4)
+*
+ainv clk clk_bar inv
+.model inv d_inverter (rise_delay=1e-5 fall_delay=1e-5)
+*
+adac [clk clk_bar] [3 4] dac
+.model dac dac_bridge (t_rise=1e-5 t_fall=1e-5)
+*
+asum [1 2 3 4] 5 sum
+.model sum summer
+*
+r3 3 0 1k
+r4 4 0 1k
+r5 5 0 1k
+*
+.end
diff --git a/src/xspice/examples/mixed_mode.deck b/src/xspice/examples/mixed_mode.deck
index 59e4745ba..bdf9ee230 100644
--- a/src/xspice/examples/mixed_mode.deck
+++ b/src/xspice/examples/mixed_mode.deck
@@ -1,98 +1,98 @@
-Mixed IO types
-*
-* This circuit contains a mixture of IO types, including
-* analog, digital, user-defined (real), and 'null'.
-*
-* The circuit demonstrates the use of the digital and
-* user-defined node capability to model system-level designs
-* such as sampled-data filters.  The simulated circuit
-* contains a digital oscillator enabled after 100us.  The
-* square wave oscillator output is divided by 8 with a
-* ripple counter.  The result is passed through a digital
-* filter to convert it to a sine wave.
-*
-.tran 1e-5 1e-3
-*
-v1 1 0 0.0 pulse(0 1 1e-4 1e-6)
-r1 1 0 1k
-*
-abridge1 [1] [enable] atod
-.model atod adc_bridge
-*
-aclk [enable clk] clk nand
-.model nand d_nand (rise_delay=1e-5 fall_delay=1e-5)
-*
-adiv2 div2_out clk NULL NULL NULL div2_out dff
-adiv4 div4_out div2_out NULL NULL NULL div4_out dff
-adiv8 div8_out div4_out NULL NULL NULL div8_out dff
-.model dff d_dff
-*
-abridge2 div8_out enable filt_in node_bridge2
-.model node_bridge2 d_to_real (zero=-1 one=1)
-*
-xfilter  filt_in clk filt_out  dig_filter
-*
-abridge3 filt_out a_out node_bridge3
-.model node_bridge3 real_to_v
-*
-rlpf1 a_out oa_minus 10k
-*
-xlpf  0 oa_minus lpf_out  opamp
-*
-rlpf2 oa_minus lpf_out 10k
-clpf  lpf_out oa_minus 0.01uF
-*
-*
-.subckt  dig_filter  filt_in clk filt_out
-*
-.model n0 real_gain (gain=1.0)
-.model n1 real_gain (gain=2.0)
-.model n2 real_gain (gain=1.0)
-.model g1 real_gain (gain=0.125)
-.model zm1 real_delay
-.model d0a real_gain (gain=-0.75)
-.model d1a real_gain (gain=0.5625)
-.model d0b real_gain (gain=-0.3438)
-.model d1b real_gain (gain=1.0)
-*
-an0a filt_in x0a n0
-an1a filt_in x1a n1
-an2a filt_in x2a n2
-*
-az0a x0a clk x1a zm1
-az1a x1a clk x2a zm1
-*
-ad0a x2a x0a d0a
-ad1a x2a x1a d1a
-*
-az2a x2a filt1_out g1
-az3a filt1_out clk filt2_in zm1
-*
-an0b filt2_in x0b n0
-an1b filt2_in x1b n1
-an2b filt2_in x2b n2
-*
-az0b x0b clk x1b zm1
-az1b x1b clk x2b zm1
-*
-ad0 x2b x0b d0b
-ad1 x2b x1b d1b
-*
-az2b x2b clk filt_out zm1
-*
-.ends dig_filter
-*
-*
-.subckt  opamp  plus minus out
-*
-r1 plus minus 300k
-a1 %vd (plus minus) outint lim
-.model lim limit (out_lower_limit = -12 out_upper_limit = 12
-+             fraction = true  limit_range = 0.2  gain=300e3)
-r3 outint out 50.0
-r2 out 0 1e12
-*
-.ends opamp
-*
-*
-.end
+Mixed IO types
+*
+* This circuit contains a mixture of IO types, including
+* analog, digital, user-defined (real), and 'null'.
+*
+* The circuit demonstrates the use of the digital and
+* user-defined node capability to model system-level designs
+* such as sampled-data filters.  The simulated circuit
+* contains a digital oscillator enabled after 100us.  The
+* square wave oscillator output is divided by 8 with a
+* ripple counter.  The result is passed through a digital
+* filter to convert it to a sine wave.
+*
+.tran 1e-5 1e-3
+*
+v1 1 0 0.0 pulse(0 1 1e-4 1e-6)
+r1 1 0 1k
+*
+abridge1 [1] [enable] atod
+.model atod adc_bridge
+*
+aclk [enable clk] clk nand
+.model nand d_nand (rise_delay=1e-5 fall_delay=1e-5)
+*
+adiv2 div2_out clk NULL NULL NULL div2_out dff
+adiv4 div4_out div2_out NULL NULL NULL div4_out dff
+adiv8 div8_out div4_out NULL NULL NULL div8_out dff
+.model dff d_dff
+*
+abridge2 div8_out enable filt_in node_bridge2
+.model node_bridge2 d_to_real (zero=-1 one=1)
+*
+xfilter  filt_in clk filt_out  dig_filter
+*
+abridge3 filt_out a_out node_bridge3
+.model node_bridge3 real_to_v
+*
+rlpf1 a_out oa_minus 10k
+*
+xlpf  0 oa_minus lpf_out  opamp
+*
+rlpf2 oa_minus lpf_out 10k
+clpf  lpf_out oa_minus 0.01uF
+*
+*
+.subckt  dig_filter  filt_in clk filt_out
+*
+.model n0 real_gain (gain=1.0)
+.model n1 real_gain (gain=2.0)
+.model n2 real_gain (gain=1.0)
+.model g1 real_gain (gain=0.125)
+.model zm1 real_delay
+.model d0a real_gain (gain=-0.75)
+.model d1a real_gain (gain=0.5625)
+.model d0b real_gain (gain=-0.3438)
+.model d1b real_gain (gain=1.0)
+*
+an0a filt_in x0a n0
+an1a filt_in x1a n1
+an2a filt_in x2a n2
+*
+az0a x0a clk x1a zm1
+az1a x1a clk x2a zm1
+*
+ad0a x2a x0a d0a
+ad1a x2a x1a d1a
+*
+az2a x2a filt1_out g1
+az3a filt1_out clk filt2_in zm1
+*
+an0b filt2_in x0b n0
+an1b filt2_in x1b n1
+an2b filt2_in x2b n2
+*
+az0b x0b clk x1b zm1
+az1b x1b clk x2b zm1
+*
+ad0 x2b x0b d0b
+ad1 x2b x1b d1b
+*
+az2b x2b clk filt_out zm1
+*
+.ends dig_filter
+*
+*
+.subckt  opamp  plus minus out
+*
+r1 plus minus 300k
+a1 %vd (plus minus) outint lim
+.model lim limit (out_lower_limit = -12 out_upper_limit = 12
++             fraction = true  limit_range = 0.2  gain=300e3)
+r3 outint out 50.0
+r2 out 0 1e12
+*
+.ends opamp
+*
+*
+.end
diff --git a/src/xspice/examples/mixed_ref.deck b/src/xspice/examples/mixed_ref.deck
index 475e0f655..3dd3faad2 100644
--- a/src/xspice/examples/mixed_ref.deck
+++ b/src/xspice/examples/mixed_ref.deck
@@ -1,41 +1,41 @@
-Mixed references
-*
-* This circuit demonstrates the use of single-ended and
-* differential inputs and outputs.
-*
-* Note that digital models reference a single node for
-* their inputs and output (i.e. they are single-ended)
-*
-.tran 1e-5 1e-3
-*
-v1  1 0  0.0 sin(0 1 5k)
-v2  2 0  0.0 sin(0 1 1k)
-*
-r1  1 0  1k
-r2  2 0  1k
-*
-*
-a1  %v 1  %i 10  times10
-r10  10 0  1k
-*
-*
-a2  %vd (1 2)  %id(11 12)  times10
-r11  11 0  1k
-r12  12 0  1k
-r11_12  11 12  1.0
-*
-*
-r3  2 3  1k
-a3  %i 3  %v 13  times10
-r13  13 0  1k
-*
-a4  [1] [digital_node1]  adc
-.model adc adc_bridge
-*
-a5  digital_node1 digital_node2  inv
-.model inv d_inverter
-*
-*
-.model times10 gain (gain=10)
-*
-.end
+Mixed references
+*
+* This circuit demonstrates the use of single-ended and
+* differential inputs and outputs.
+*
+* Note that digital models reference a single node for
+* their inputs and output (i.e. they are single-ended)
+*
+.tran 1e-5 1e-3
+*
+v1  1 0  0.0 sin(0 1 5k)
+v2  2 0  0.0 sin(0 1 1k)
+*
+r1  1 0  1k
+r2  2 0  1k
+*
+*
+a1  %v 1  %i 10  times10
+r10  10 0  1k
+*
+*
+a2  %vd (1 2)  %id(11 12)  times10
+r11  11 0  1k
+r12  12 0  1k
+r11_12  11 12  1.0
+*
+*
+r3  2 3  1k
+a3  %i 3  %v 13  times10
+r13  13 0  1k
+*
+a4  [1] [digital_node1]  adc
+.model adc adc_bridge
+*
+a5  digital_node1 digital_node2  inv
+.model inv d_inverter
+*
+*
+.model times10 gain (gain=10)
+*
+.end
diff --git a/src/xspice/examples/mosamp2.in b/src/xspice/examples/mosamp2.in
index d8029ad77..fff88e101 100644
--- a/src/xspice/examples/mosamp2.in
+++ b/src/xspice/examples/mosamp2.in
@@ -1,42 +1,42 @@
-mosamp2 - mos amplifier - transient
-.options acct abstol=10n  vntol=10n
-.tran 0.1us 10us
-m1  15 15  1 32 m w=88.9u  l=25.4u
-m2   1  1  2 32 m w=12.7u  l=266.7u
-m3   2  2 30 32 m w=88.9u  l=25.4u
-m4  15  5  4 32 m w=12.7u  l=106.7u
-m5   4  4 30 32 m w=88.9u  l=12.7u
-m6  15 15  5 32 m w=44.5u  l=25.4u
-m7   5 20  8 32 m w=482.6u l=12.7u
-m8   8  2 30 32 m w=88.9u  l=25.4u
-m9  15 15  6 32 m w=44.5u  l=25.4u
-m10  6 21  8 32 m w=482.6u l=12.7u
-m11 15  6  7 32 m w=12.7u  l=106.7u
-m12  7  4 30 32 m w=88.9u  l=12.7u
-m13 15 10  9 32 m w=139.7u l=12.7u
-m14  9 11 30 32 m w=139.7u l=12.7u
-m15 15 15 12 32 m w=12.7u  l=207.8u
-m16 12 12 11 32 m w=54.1u  l=12.7u
-m17 11 11 30 32 m w=54.1u  l=12.7u
-m18 15 15 10 32 m w=12.7u  l=45.2u
-m19 10 12 13 32 m w=270.5u l=12.7u
-m20 13  7 30 32 m w=270.5u l=12.7u
-m21 15 10 14 32 m w=254u   l=12.7u
-m22 14 11 30 32 m w=241.3u l=12.7u
-m23 15 20 16 32 m w=19u    l=38.1u
-m24 16 14 30 32 m w=406.4u l=12.7u
-m25 15 15 20 32 m w=38.1u  l=42.7u
-m26 20 16 30 32 m w=381u   l=25.4u
-m27 20 15 66 32 m w=22.9u  l=7.6u
-cc 7 9 40pf
-cl 66 0 70pf
-vin 21 0 pulse(0 5 1ns 1ns 1ns 5us 10us)
-vccp 15 0 dc +15
-vddn 30 0 dc -15
-vb 32 0 dc -20
-.model m nmos(nsub=2.2e15 uo=575 ucrit=49k uexp=0.1 tox=0.11u xj=2.95u
-+   level=2 cgso=1.5n cgdo=1.5n cbd=4.5f cbs=4.5f ld=2.4485u nss=3.2e10
-+   kp=2e-5 phi=0.6 )
-.print tran v(20) v(66)
-.plot  tran v(20) v(66)
-.end 
+mosamp2 - mos amplifier - transient
+.options acct abstol=10n  vntol=10n
+.tran 0.1us 10us
+m1  15 15  1 32 m w=88.9u  l=25.4u
+m2   1  1  2 32 m w=12.7u  l=266.7u
+m3   2  2 30 32 m w=88.9u  l=25.4u
+m4  15  5  4 32 m w=12.7u  l=106.7u
+m5   4  4 30 32 m w=88.9u  l=12.7u
+m6  15 15  5 32 m w=44.5u  l=25.4u
+m7   5 20  8 32 m w=482.6u l=12.7u
+m8   8  2 30 32 m w=88.9u  l=25.4u
+m9  15 15  6 32 m w=44.5u  l=25.4u
+m10  6 21  8 32 m w=482.6u l=12.7u
+m11 15  6  7 32 m w=12.7u  l=106.7u
+m12  7  4 30 32 m w=88.9u  l=12.7u
+m13 15 10  9 32 m w=139.7u l=12.7u
+m14  9 11 30 32 m w=139.7u l=12.7u
+m15 15 15 12 32 m w=12.7u  l=207.8u
+m16 12 12 11 32 m w=54.1u  l=12.7u
+m17 11 11 30 32 m w=54.1u  l=12.7u
+m18 15 15 10 32 m w=12.7u  l=45.2u
+m19 10 12 13 32 m w=270.5u l=12.7u
+m20 13  7 30 32 m w=270.5u l=12.7u
+m21 15 10 14 32 m w=254u   l=12.7u
+m22 14 11 30 32 m w=241.3u l=12.7u
+m23 15 20 16 32 m w=19u    l=38.1u
+m24 16 14 30 32 m w=406.4u l=12.7u
+m25 15 15 20 32 m w=38.1u  l=42.7u
+m26 20 16 30 32 m w=381u   l=25.4u
+m27 20 15 66 32 m w=22.9u  l=7.6u
+cc 7 9 40pf
+cl 66 0 70pf
+vin 21 0 pulse(0 5 1ns 1ns 1ns 5us 10us)
+vccp 15 0 dc +15
+vddn 30 0 dc -15
+vb 32 0 dc -20
+.model m nmos(nsub=2.2e15 uo=575 ucrit=49k uexp=0.1 tox=0.11u xj=2.95u
++   level=2 cgso=1.5n cgdo=1.5n cbd=4.5f cbs=4.5f ld=2.4485u nss=3.2e10
++   kp=2e-5 phi=0.6 )
+.print tran v(20) v(66)
+.plot  tran v(20) v(66)
+.end 
diff --git a/src/xspice/examples/mosmem.in b/src/xspice/examples/mosmem.in
index c2803445b..2654ca8ec 100644
--- a/src/xspice/examples/mosmem.in
+++ b/src/xspice/examples/mosmem.in
@@ -1,27 +1,27 @@
-mosmem - mos memory cell
-.width in=72
-.opt abstol=1u
-.opt acct list node
-.tran 20ns 2us
-vdd 9 0 dc 5
-vs 7 0 pulse(2 0 520ns 20ns 20ns 500ns 2000ns)
-vw 1 0 pulse(0 2 20ns 20ns 500ns 200ns)
-vwb 2 0 pulse(2 0 20ns 20ns 20ns 2000ns 2000ns)
-m1 3 1 0 0 mod w=250u l=5u
-m2 4 2 0 0 mod w=250u l=5u
-m3 9 9 3 0 mod w=5u   l=5u
-m4 9 9 4 0 mod w=5u   l=5u
-m5 5 7 3 0 mod w=50u  l=5u
-m6 6 7 4 0 mod w=50u  l=5u
-m7 5 6 0 0 mod w=250u  l=5u
-m8 6 5 0 0 mod w=250u  l=5u
-m9 9 9 5 0 mod w=5u   l=5u
-m10 9 9 6 0 mod w=5u  l=5u
-m11 8 4 0 0 mod w=250u l=5u
-m12 9 9 8 0 mod w=5u   l=5u
-.model mod nmos(vto=0.5 phi=0.7 kp=1.0e-6 gamma=1.83 lambda=0.115
-+   level=1 cgso=1u cgdo=1u cbd=50p cbs=50p)
-.print dc v(5) v(6)
-.plot dc v(6)
-.plot tran v(6) v(5) v(7) v(1) v(2)
-.end
+mosmem - mos memory cell
+.width in=72
+.opt abstol=1u
+.opt acct list node
+.tran 20ns 2us
+vdd 9 0 dc 5
+vs 7 0 pulse(2 0 520ns 20ns 20ns 500ns 2000ns)
+vw 1 0 pulse(0 2 20ns 20ns 500ns 200ns)
+vwb 2 0 pulse(2 0 20ns 20ns 20ns 2000ns 2000ns)
+m1 3 1 0 0 mod w=250u l=5u
+m2 4 2 0 0 mod w=250u l=5u
+m3 9 9 3 0 mod w=5u   l=5u
+m4 9 9 4 0 mod w=5u   l=5u
+m5 5 7 3 0 mod w=50u  l=5u
+m6 6 7 4 0 mod w=50u  l=5u
+m7 5 6 0 0 mod w=250u  l=5u
+m8 6 5 0 0 mod w=250u  l=5u
+m9 9 9 5 0 mod w=5u   l=5u
+m10 9 9 6 0 mod w=5u  l=5u
+m11 8 4 0 0 mod w=250u l=5u
+m12 9 9 8 0 mod w=5u   l=5u
+.model mod nmos(vto=0.5 phi=0.7 kp=1.0e-6 gamma=1.83 lambda=0.115
++   level=1 cgso=1u cgdo=1u cbd=50p cbs=50p)
+.print dc v(5) v(6)
+.plot dc v(6)
+.plot tran v(6) v(5) v(7) v(1) v(2)
+.end
diff --git a/src/xspice/examples/param_defaults.deck b/src/xspice/examples/param_defaults.deck
index 75e3542be..3553fd0e2 100644
--- a/src/xspice/examples/param_defaults.deck
+++ b/src/xspice/examples/param_defaults.deck
@@ -1,16 +1,16 @@
-Parameter defaults
-*
-* This circuit contains a code model with
-* parameters of various types, which are all defaulted,
-* and prints the default values.
-*
-.op
-*
-r1 1 0 1k
-r2 2 0 1k
-r3 1 2 1k
-*
-a1 [1 2] mod
-.model mod print_param_types 
-*
-.end
+Parameter defaults
+*
+* This circuit contains a code model with
+* parameters of various types, which are all defaulted,
+* and prints the default values.
+*
+.op
+*
+r1 1 0 1k
+r2 2 0 1k
+r3 1 2 1k
+*
+a1 [1 2] mod
+.model mod print_param_types 
+*
+.end
diff --git a/src/xspice/examples/param_types.deck b/src/xspice/examples/param_types.deck
index 84a43ef9e..31a0c754c 100644
--- a/src/xspice/examples/param_types.deck
+++ b/src/xspice/examples/param_types.deck
@@ -1,23 +1,23 @@
-Parameter types
-*
-* This circuit contains a code model which accepts several
-* parameters of various types and prints them.
-*
-.op
-*
-r1 1 0 1k
-r2 2 0 1k
-r3 1 2 1k
-*
-a1 [1 2] mod
-.model mod print_param_types 
-+  integer=2
-+  real=3.0
-+  complex=<4.0 5.0>
-+  string=six
-+  integer_array=[7 8]
-+  real_array=[9.0 10.0]
-+  complex_array=[< 11.0 12.0 > < 13.0 14.0 >]
-+  string_array=[fifteen sixteen]
-*
-.end
+Parameter types
+*
+* This circuit contains a code model which accepts several
+* parameters of various types and prints them.
+*
+.op
+*
+r1 1 0 1k
+r2 2 0 1k
+r3 1 2 1k
+*
+a1 [1 2] mod
+.model mod print_param_types 
++  integer=2
++  real=3.0
++  complex=<4.0 5.0>
++  string=six
++  integer_array=[7 8]
++  real_array=[9.0 10.0]
++  complex_array=[< 11.0 12.0 > < 13.0 14.0 >]
++  string_array=[fifteen sixteen]
+*
+.end
diff --git a/src/xspice/examples/parsing.deck b/src/xspice/examples/parsing.deck
index b5de5f594..1eb814a48 100644
--- a/src/xspice/examples/parsing.deck
+++ b/src/xspice/examples/parsing.deck
@@ -1,16 +1,16 @@
-Parsing
-*
-* This circuit contains a simple gain block to demonstrate
-* that the simulator parses the syntax used to reference
-* code models.
-*
-.tran 1e-5 1e-3
-*
-v1 1 0 0.0 sin(0 1 1k)
-r1 1 0 1k
-*
-a1 1 2 gain_block
-.model gain_block gain (gain=10)
-r2 2 0 1k
-*
-.end
+Parsing
+*
+* This circuit contains a simple gain block to demonstrate
+* that the simulator parses the syntax used to reference
+* code models.
+*
+.tran 1e-5 1e-3
+*
+v1 1 0 0.0 sin(0 1 1k)
+r1 1 0 1k
+*
+a1 1 2 gain_block
+.model gain_block gain (gain=10)
+r2 2 0 1k
+*
+.end
diff --git a/src/xspice/examples/polarity.deck b/src/xspice/examples/polarity.deck
index 7488e182a..0724d8141 100644
--- a/src/xspice/examples/polarity.deck
+++ b/src/xspice/examples/polarity.deck
@@ -1,26 +1,26 @@
-Polarity of voltages and currents
-*
-* This circuit contains a set of gain blocks to evaluate
-* the polarity of voltages and currents on code models
-*
-.tran 1e-5 1e-3
-*
-v1  1 0  0.0 sin(0 1 1k)
-*
-r1  1 0  1k
-*
-*
-a1  %v 1  %v 10  times10
-r10  10 0  1k
-*
-r1_2  1 2  1k
-a2  %i 2  %v 11  times10
-r11  11 0  1k
-*
-a3  1  %i 12  times10
-r12  12 0  1k
-*
-*
-.model times10 gain (gain=10)
-*
-.end
+Polarity of voltages and currents
+*
+* This circuit contains a set of gain blocks to evaluate
+* the polarity of voltages and currents on code models
+*
+.tran 1e-5 1e-3
+*
+v1  1 0  0.0 sin(0 1 1k)
+*
+r1  1 0  1k
+*
+*
+a1  %v 1  %v 10  times10
+r10  10 0  1k
+*
+r1_2  1 2  1k
+a2  %i 2  %v 11  times10
+r11  11 0  1k
+*
+a3  1  %i 12  times10
+r12  12 0  1k
+*
+*
+.model times10 gain (gain=10)
+*
+.end
diff --git a/src/xspice/examples/schmitt.in b/src/xspice/examples/schmitt.in
index 6a7732027..49b08ebfd 100644
--- a/src/xspice/examples/schmitt.in
+++ b/src/xspice/examples/schmitt.in
@@ -1,24 +1,24 @@
-schmitt ckt - ecl compatible schmitt trigger
-.width in=72
-.opt acct list node lvlcod=2
-.tran 10ns 1000ns
-vin 1 0 pulse(-1.6 -1.2 10ns 400ns 400ns 100ns 10000ns)
-vee 8 0 -5
-rin 1 2 50
-rc1 0 3 50
-r1 3 5 185
-r2 5 8 760
-rc2 0 6 100
-re 4 8 260
-rth1 7 8 125
-rth2 7 0 85
-cload 7 0 5pf
-q1 3 2 4 qstd off
-q2 6 5 4 qstd
-q3 0 6 7 qstd
-q4 0 6 7 qstd
-.model qstd npn(is=1.0e-16 bf=50 br=0.1 rb=50 rc=10 tf=0.12ns tr=5ns
-+   cje=0.4pf pe=0.8 me=0.4 cjc=0.5pf pc=0.8 mc=0.333 ccs=1pf va=50)
-.print tran v(1) v(3) v(5) v(6)
-.plot tran v(3) v(5) v(6) v(1)
-.end
+schmitt ckt - ecl compatible schmitt trigger
+.width in=72
+.opt acct list node lvlcod=2
+.tran 10ns 1000ns
+vin 1 0 pulse(-1.6 -1.2 10ns 400ns 400ns 100ns 10000ns)
+vee 8 0 -5
+rin 1 2 50
+rc1 0 3 50
+r1 3 5 185
+r2 5 8 760
+rc2 0 6 100
+re 4 8 260
+rth1 7 8 125
+rth2 7 0 85
+cload 7 0 5pf
+q1 3 2 4 qstd off
+q2 6 5 4 qstd
+q3 0 6 7 qstd
+q4 0 6 7 qstd
+.model qstd npn(is=1.0e-16 bf=50 br=0.1 rb=50 rc=10 tf=0.12ns tr=5ns
++   cje=0.4pf pe=0.8 me=0.4 cjc=0.5pf pc=0.8 mc=0.333 ccs=1pf va=50)
+.print tran v(1) v(3) v(5) v(6)
+.plot tran v(3) v(5) v(6) v(1)
+.end
diff --git a/src/xspice/examples/spice3.deck b/src/xspice/examples/spice3.deck
index 1055c69b8..0cd56b417 100644
--- a/src/xspice/examples/spice3.deck
+++ b/src/xspice/examples/spice3.deck
@@ -1,25 +1,25 @@
-A Berkeley SPICE3 compatible circuit
-*
-* This circuit contains only Berkeley SPICE3 components.
-*
-* The circuit is an AC coupled transistor amplifier with
-* a sinewave input at node "1", a gain of approximately -3.9,
-* and output on node "coll".
-*
-.tran 1e-5 2e-3
-*
-vcc  vcc 0  12.0
-vin  1 0  0.0 ac 1.0 sin(0 1 1k)
-*
-ccouple  1 base  10uF
-*
-rbias1  vcc base  100k
-rbias2  base 0  24k
-*
-q1  coll base emit  generic
-.model generic npn
-*
-rcollector  vcc coll  3.9k
-remitter  emit 0  1k
-*
-.end
+A Berkeley SPICE3 compatible circuit
+*
+* This circuit contains only Berkeley SPICE3 components.
+*
+* The circuit is an AC coupled transistor amplifier with
+* a sinewave input at node "1", a gain of approximately -3.9,
+* and output on node "coll".
+*
+.tran 1e-5 2e-3
+*
+vcc  vcc 0  12.0
+vin  1 0  0.0 ac 1.0 sin(0 1 1k)
+*
+ccouple  1 base  10uF
+*
+rbias1  vcc base  100k
+rbias2  base 0  24k
+*
+q1  coll base emit  generic
+.model generic npn
+*
+rcollector  vcc coll  3.9k
+remitter  emit 0  1k
+*
+.end
diff --git a/src/xspice/examples/suffixes.deck b/src/xspice/examples/suffixes.deck
index 81b9bec75..cbacf988c 100644
--- a/src/xspice/examples/suffixes.deck
+++ b/src/xspice/examples/suffixes.deck
@@ -1,25 +1,25 @@
-Engineering suffixes
-*
-* This circuit contains a code model which accepts several
-* parameters of various types and prints them.  The values
-* specified on the .model card use engineering suffixes on
-* the numeric parameters.
-*
-.op
-*
-r1 1 0 1k
-r2 2 0 1k
-r3 1 2 1k
-*
-a1 [1 2] mod
-.model mod print_param_types 
-+  integer=2k
-+  real=3.0u
-+  complex=< 4.0f 5.0mil >
-+  string=six
-+  integer_array=[7meg 8]
-+  real_array=[9.0n 10.0p]
-+  complex_array=[< 11.0t 12.0g > < 13.0m 14.0 >]
-+  string_array=[fifteen sixteen]
-*
-.end
+Engineering suffixes
+*
+* This circuit contains a code model which accepts several
+* parameters of various types and prints them.  The values
+* specified on the .model card use engineering suffixes on
+* the numeric parameters.
+*
+.op
+*
+r1 1 0 1k
+r2 2 0 1k
+r3 1 2 1k
+*
+a1 [1 2] mod
+.model mod print_param_types 
++  integer=2k
++  real=3.0u
++  complex=< 4.0f 5.0mil >
++  string=six
++  integer_array=[7meg 8]
++  real_array=[9.0n 10.0p]
++  complex_array=[< 11.0t 12.0g > < 13.0m 14.0 >]
++  string_array=[fifteen sixteen]
+*
+.end
diff --git a/src/xspice/examples/supply_ramping.deck b/src/xspice/examples/supply_ramping.deck
index c2efd8050..beb3539ed 100644
--- a/src/xspice/examples/supply_ramping.deck
+++ b/src/xspice/examples/supply_ramping.deck
@@ -1,30 +1,30 @@
-Supply ramping option
-*
-* This circuit demonstrates the use of the option
-* "ramptime" which ramps independent sources and the
-* capacitor and inductor initial conditions from 
-* zero to their final value during the time period
-* specified.
-*
-*
-.tran 0.1 5
-.option ramptime=0.2
-*
-a1 1 0 cap
-.model cap capacitor (c=1000uf ic=1)
-r1 1 0 1k
-*
-a2 2 0 ind
-.model ind inductor (l=1H ic=1)
-r2 2 0 1.0
-*
-v1 3 0 1.0
-r3 3 0 1k
-*
-i1 4 0 1e-3
-r4 4 0 1k
-*
-v2 5 0 0.0  sin(0 1 0.3 0 0 45.0)
-r5 5 0 1k
-*
-.end
+Supply ramping option
+*
+* This circuit demonstrates the use of the option
+* "ramptime" which ramps independent sources and the
+* capacitor and inductor initial conditions from 
+* zero to their final value during the time period
+* specified.
+*
+*
+.tran 0.1 5
+.option ramptime=0.2
+*
+a1 1 0 cap
+.model cap capacitor (c=1000uf ic=1)
+r1 1 0 1k
+*
+a2 2 0 ind
+.model ind inductor (l=1H ic=1)
+r2 2 0 1.0
+*
+v1 3 0 1.0
+r3 3 0 1k
+*
+i1 4 0 1e-3
+r4 4 0 1k
+*
+v2 5 0 0.0  sin(0 1 0.3 0 0 45.0)
+r5 5 0 1k
+*
+.end
diff --git a/src/xspice/examples/user_defined_nodes.deck b/src/xspice/examples/user_defined_nodes.deck
index 9fb9ca1a4..6a3c7236e 100644
--- a/src/xspice/examples/user_defined_nodes.deck
+++ b/src/xspice/examples/user_defined_nodes.deck
@@ -1,30 +1,30 @@
-User defined nodes
-*
-* This circuit contains a mix of node types including
-* two 'real' type user-defined nodes and associated
-* node bridges.
-*
-.tran 1e-6 1e-4
-*
-v1  1 0  0.0 pulse(0 1 2e-5)
-r1  1 0  1k
-*
-abridge1  [1] [enable]  node_bridge1
-.model node_bridge1 adc_bridge
-*
-aclk  [enable clk] clk  nand
-.model nand d_nand (rise_delay=1e-5 fall_delay=1e-5)
-*
-abridge2  clk enable real_node1  node_bridge2
-.model node_bridge2 d_to_real (zero=-1 one=1)
-*
-again  real_node1 real_node2  times10
-.model times10 real_gain (gain=10)
-*
-abridge3  real_node2 analog_node  node_bridge3
-.model node_bridge3 real_to_v
-*
-rout  analog_node 0  1k
-*
-*
-.end
+User defined nodes
+*
+* This circuit contains a mix of node types including
+* two 'real' type user-defined nodes and associated
+* node bridges.
+*
+.tran 1e-6 1e-4
+*
+v1  1 0  0.0 pulse(0 1 2e-5)
+r1  1 0  1k
+*
+abridge1  [1] [enable]  node_bridge1
+.model node_bridge1 adc_bridge
+*
+aclk  [enable clk] clk  nand
+.model nand d_nand (rise_delay=1e-5 fall_delay=1e-5)
+*
+abridge2  clk enable real_node1  node_bridge2
+.model node_bridge2 d_to_real (zero=-1 one=1)
+*
+again  real_node1 real_node2  times10
+.model times10 real_gain (gain=10)
+*
+abridge3  real_node2 analog_node  node_bridge3
+.model node_bridge3 real_to_v
+*
+rout  analog_node 0  1k
+*
+*
+.end
diff --git a/src/xspice/examples/xspice.deck b/src/xspice/examples/xspice.deck
index 121ef20b8..b79ed4fe9 100644
--- a/src/xspice/examples/xspice.deck
+++ b/src/xspice/examples/xspice.deck
@@ -1,22 +1,22 @@
-A simple XSPICE amplifier circuit
-*
-* This uses an XSPICE "gain" code model to substitute for
-* the transistor amplifier circuit in spice3.deck.
-*
-.tran 1e-5 2e-3
-*
-vin  1 0  0.0 ac 1.0 sin(0 1 1k)
-*
-ccouple  1 in  10uF
-*
-*
-rzin  in 0  19.35k
-*
-aamp  in coll  gain_block
-.model gain_block gain (gain = -3.9  out_offset = 7.003)
-*
-rzout out coll 3.9k
-rbig  coll 0   1e12
-*
-*
-.end
+A simple XSPICE amplifier circuit
+*
+* This uses an XSPICE "gain" code model to substitute for
+* the transistor amplifier circuit in spice3.deck.
+*
+.tran 1e-5 2e-3
+*
+vin  1 0  0.0 ac 1.0 sin(0 1 1k)
+*
+ccouple  1 in  10uF
+*
+*
+rzin  in 0  19.35k
+*
+aamp  in coll  gain_block
+.model gain_block gain (gain = -3.9  out_offset = 7.003)
+*
+rzout out coll 3.9k
+rbig  coll 0   1e12
+*
+*
+.end