diff --git a/src/spicelib/devices/vdmos/vdmos.c b/src/spicelib/devices/vdmos/vdmos.c
index 547d33095..43bb8c6e7 100644
--- a/src/spicelib/devices/vdmos/vdmos.c
+++ b/src/spicelib/devices/vdmos/vdmos.c
@@ -91,6 +91,7 @@ IFparm VDMOSmPTable[] = { /* model parameters */
  IOP("rd",    VDMOS_MOD_RD,    IF_REAL,   "Drain ohmic resistance"),
  IOP("rs",    VDMOS_MOD_RS,    IF_REAL,   "Source ohmic resistance"),
  IOP("rg",    VDMOS_MOD_RG,    IF_REAL,   "Gate ohmic resistance"),
+
  IOP("mtriode", VDMOS_MOD_MTRIODE, IF_REAL,   "Conductance multiplier in triode region"),
 
 /* body diode */
diff --git a/src/spicelib/devices/vdmos/vdmosdset.c b/src/spicelib/devices/vdmos/vdmosdset.c
index a383bbb99..6115d1ea9 100644
--- a/src/spicelib/devices/vdmos/vdmosdset.c
+++ b/src/spicelib/devices/vdmos/vdmosdset.c
@@ -155,8 +155,10 @@ VDMOSdSetup(GENmodel *inModel, CKTcircuit *ckt)
 	    double d3vondvbs3;
 
 		    dvondvbs = d2vondvbs2 = d3vondvbs3 = 0.0;
+
                 vgst=(here->VDMOSmode==1?vgs:vgd);
                 vdsat=MAX(vgst,0);
+
                 if (vgst <= 0) {
                     /*
                      *     cutoff region
@@ -280,8 +282,6 @@ VDMOSdSetup(GENmodel *inModel, CKTcircuit *ckt)
     /* von, vgst and vdsat have already been adjusted for 
         possible source-drain interchange */
 
-
-
     phi = here->VDMOStPhi;
     cox = 0;/*FIXME: can we do disto without knowing the oxide thickness?*/
     if (vgst <= -phi) {
diff --git a/src/spicelib/devices/vdmos/vdmosload.c b/src/spicelib/devices/vdmos/vdmosload.c
index d26ee4e58..89ca8fe13 100644
--- a/src/spicelib/devices/vdmos/vdmosload.c
+++ b/src/spicelib/devices/vdmos/vdmosload.c
@@ -87,9 +87,6 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
 
             vt = CONSTKoverQ * here->VDMOStemp;
             Check = 1;
-            /*
-              
-            */
 
             /* first, we compute a few useful values - these could be
              * pre-computed, but for historical reasons are still done
@@ -111,7 +108,6 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
              * share some code, so we put them first - others later on
              */
 
-
             if ((ckt->CKTmode & (MODEINITFLOAT | MODEINITPRED | MODEINITSMSIG
                                  | MODEINITTRAN)) ||
                     ((ckt->CKTmode & MODEINITFIX) && (!here->VDMOSoff))) {
@@ -189,9 +185,7 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
                     here->VDMOScbd +
                     here->VDMOSgbd * delvbd +
                     here->VDMOSgbs * delvbs;
-                /*
 
-                */
 
 #ifndef NOBYPASS
                 /* now lets see if we can bypass (ugh) */
@@ -253,9 +247,6 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
                 }
 #endif /*NOBYPASS*/
 
-                /*
-
-                */
 
                 /* ok - bypass is out, do it the hard way */
 
@@ -294,9 +285,7 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
                     vbs = vbd + vds;
                 }
 #endif /*NODELIMITING*/
-                /*
 
-                */
 
             } else {
 
@@ -321,9 +310,7 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
                     vbs = vgs = vds = 0;
                 }
             }
-            /*
 
-            */
 
             /*
              * now all the preliminaries are over - we can start doing the
@@ -353,9 +340,6 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
                 /* inverse mode */
                 here->VDMOSmode = -1;
             }
-            /*
-
-            */
 
             {
                 /*
@@ -411,19 +395,14 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
                         here->VDMOSgmbs = here->VDMOSgm * arg;
                     }
                 }
-                /*
-                 *     finished
-                 */
             }
-            /*
 
-            */
 
             /* now deal with n vs p polarity */
 
             here->VDMOSvon = model->VDMOStype * von;
             here->VDMOSvdsat = model->VDMOStype * vdsat;
-            /* line 490 */
+
             /*
              *  COMPUTE EQUIVALENT DRAIN CURRENT SOURCE
              */
@@ -438,14 +417,9 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
 
                 *(ckt->CKTstate0 + here->VDMOSqbd) = 0;
                 here->VDMOScapbd = 0;
-                /*
-
-                */
-
             }
 
 
-
             /* save things away for next time */
 
             *(ckt->CKTstate0 + here->VDMOSvbs) = vbs;
@@ -453,9 +427,6 @@ VDMOSload(GENmodel *inModel, CKTcircuit *ckt)
             *(ckt->CKTstate0 + here->VDMOSvgs) = vgs;
             *(ckt->CKTstate0 + here->VDMOSvds) = vds;
 
-            /*
-
-            */
 
             /*
              * vdmos capacitor model
@@ -593,7 +564,6 @@ bypass :
             /*
              *  load y matrix
              */
-
             *(here->VDMOSDdPtr) += (here->VDMOSdrainConductance + here->VDMOSdsConductance);
             *(here->VDMOSGgPtr) += (here->VDMOSgateConductance); //((gcgd + gcgs + gcgb));
             *(here->VDMOSSsPtr) += (here->VDMOSsourceConductance + here->VDMOSdsConductance);
diff --git a/src/spicelib/devices/vdmos/vdmostemp.c b/src/spicelib/devices/vdmos/vdmostemp.c
index 1a83c5cfc..6a0fff757 100644
--- a/src/spicelib/devices/vdmos/vdmostemp.c
+++ b/src/spicelib/devices/vdmos/vdmostemp.c
@@ -219,7 +219,6 @@ VDMOStemp(GENmodel *inModel, CKTcircuit *ckt)
             here->VDIOtJctCap *= 1 + here->VDIOtGradingCoeff*
                 (400e-6*(here->VDMOStemp - REFTEMP) - gmanew);
 
-
             here->VDIOtSatCur = model->VDIOjctSatCur * exp(
                 ((here->VDMOStemp / model->VDMOStnom) - 1) *
                 model->VDMOSDeg / (model->VDMOSDn*vt) +