From b7e9112c2a779f143b7a92797ff5e0b39f00e0b8 Mon Sep 17 00:00:00 2001 From: dwarning Date: Wed, 4 May 2011 21:00:13 +0000 Subject: [PATCH] add HiSIM HV model --- ChangeLog | 3 +++ DEVICES | 17 ++++++++++++++++- 2 files changed, 19 insertions(+), 1 deletion(-) diff --git a/ChangeLog b/ChangeLog index 91f3e5671..1176fe76b 100644 --- a/ChangeLog +++ b/ChangeLog @@ -1,3 +1,6 @@ +2011-05-04 Dietmar Warning + * DEVICES: update and include HiSIM HV model. + 2011-05-03 Holger Vogt * x11.c, graph.h: move #define NUMCOLORS to x11.c to avoid redefinition under MS Visual Studion diff --git a/DEVICES b/DEVICES index 7d13e9838..d9f720c60 100644 --- a/DEVICES +++ b/DEVICES @@ -53,6 +53,7 @@ Table of contents 11.11 BSIM3 - BSIM model level 3 vers. 3 11.12 BSIM4 - BSIM model level 4 11.13 HiSIM - Hiroshima-University STARC IGFET Model + 11.14 HiSIM_HV - Hiroshima-University STARC IGFET High Voltage Model 12. SOI devices 12.1 BSIM3SOI_FD - SOI model (fully depleted devices) 12.2 BSIM3SOI_DD - SOI Model (dynamic depletion model) @@ -638,6 +639,7 @@ will be updated every time the device specific code is altered or changed to ref Enhancements over the original model: - Parallel Multiplier + - delvto, mulu0 instance parameter - ACM Area Calculation Method - Multirevision code (supports all 3v3.2 minor revisions) - NodesetFix @@ -701,6 +703,19 @@ will be updated every time the device specific code is altered or changed to ref - Parallel Multiplier - NodesetFix + 11.14 HiSIM_HV - Hiroshima-University STARC IGFET High Voltage Model + + Ver: 1.2.1 + Class: M + Level: 62 + Dir: devices/hisimhv + Status: TO BE TESTED. + + This is the HiSIM_HV model available from Hiroshima University + (Ultra-Small Device Engineering Laboratory) + + Web site: http://home.hiroshima-u.ac.jp/usdl/HiSIM.html + 12. SOI devices @@ -774,7 +789,7 @@ will be updated every time the device specific code is altered or changed to ref Ver: 2.6 Class: M - Level: 62 + Level: 61 Dir: devices/soi3 Status: OBSOLETE