From 96282499624a7b96de90c9030c456b3a7afcaa84 Mon Sep 17 00:00:00 2001 From: rlar Date: Tue, 11 Jul 2017 18:52:36 +0200 Subject: [PATCH] ekv, use (*desc*) instead of (*info*), useless, they have none --- src/spicelib/devices/adms/ekv/admsva/ekv.va | 138 ++++++++++---------- 1 file changed, 69 insertions(+), 69 deletions(-) diff --git a/src/spicelib/devices/adms/ekv/admsva/ekv.va b/src/spicelib/devices/adms/ekv/admsva/ekv.va index 71ae4accb..8d50b8c7a 100644 --- a/src/spicelib/devices/adms/ekv/admsva/ekv.va +++ b/src/spicelib/devices/adms/ekv/admsva/ekv.va @@ -75,172 +75,172 @@ module ekv (d,g,s,b); // Model parameters - parameter integer nmos=1 from [0:1] `P(info="MOS type : nmos:0"); - parameter integer pmos=1 from [0:1] `P(info="MOS type : pmos:0"); + parameter integer nmos=1 from [0:1] `P(desc="MOS type : nmos:0"); + parameter integer pmos=1 from [0:1] `P(desc="MOS type : pmos:0"); parameter integer MTYPE=(nmos==0 ? (pmos==0 ? 0 : 1) : (pmos==0 ? -1 : 1)); parameter real TNOM=27 from (-273.15:inf) - `P(info="Nominal temperature [degC]"); + `P(desc="Nominal temperature [degC]"); parameter real IMAX=1 from (0:inf) - `P(info="Maximum forward junction current before linearization [A]"); + `P(desc="Maximum forward junction current before linearization [A]"); // - intrinsic model (optional, section 4.2.1) parameter real TOX=0 from [0:inf) - `P(info="Oxide thickness [m]"); + `P(desc="Oxide thickness [m]"); parameter real NSUB=0 from [0:inf) - `P(info="Channel doping [cm^-3]"); + `P(desc="Channel doping [cm^-3]"); parameter real VFB=1001.0 from (-inf:inf) // use 1001V as "not specified" - `P(info="Flat-band voltage [V]"); + `P(desc="Flat-band voltage [V]"); parameter real UO=0 from [0:inf) - `P(info="Low-field mobility [cm^2/Vs]"); + `P(desc="Low-field mobility [cm^2/Vs]"); parameter real VMAX=0 from [0:inf) - `P(info="Saturation velocity [m/s]"); + `P(desc="Saturation velocity [m/s]"); parameter real THETA=0 from [0:inf) - `P(info="Mobility reduction coefficient [V^-1]"); + `P(desc="Mobility reduction coefficient [V^-1]"); // - intrinsic model (process related, section 4.1) parameter real COX=((TOX>0) ? (`EPSOX/TOX) : 0.7m) from [0:inf) - `P(info="Oxide capacitance [F/m^2]"); + `P(desc="Oxide capacitance [F/m^2]"); parameter real XJ=0.1u from [1n:inf) - `P(info="Junction depth [m]"); + `P(desc="Junction depth [m]"); parameter real DL=0 from (-inf:inf) - `P(info="Length correction [m]"); + `P(desc="Length correction [m]"); parameter real DW=0 from (-inf:inf) - `P(info="Width correction [m]"); + `P(desc="Width correction [m]"); // - intrinsic model (basic, section 4.2) parameter real GAMMA=((NSUB>0) ? (sqrt(2*`P_Q*`EPSSI*NSUB*1e6)/COX) : 1) from [0:inf) - `P(info="Body effect parameter [V^0.5]"); + `P(desc="Body effect parameter [V^0.5]"); parameter real PHI=((NSUB>0) ? (2*`VT((TNOM+273.15))*ln(max(NSUB,1)*1e6/`NI((TNOM+273.15)))) : 0.7) from [0.1:inf) - `P(info="Bulk Fermi potential (*2) [V]"); + `P(desc="Bulk Fermi potential (*2) [V]"); parameter real VTO=((VFB<1000.0) ? (VFB+MTYPE*(PHI+GAMMA*sqrt(PHI))) : 0.5) from (-inf:inf) - `P(info="Long-channel threshold voltage [V]"); + `P(desc="Long-channel threshold voltage [V]"); parameter real KP=((UO>0) ? (UO*1e-4*COX) : 50u) from (0:inf) - `P(info="Transconductance parameter [A/V^2]"); + `P(desc="Transconductance parameter [A/V^2]"); parameter real UCRIT=(((VMAX>0) && (UO>0)) ? (VMAX/(UO*1e-4)) : 2e6 ) from [100k:inf) - `P(info="Longitudinal critical field [V/m]"); + `P(desc="Longitudinal critical field [V/m]"); parameter real E0=((THETA>0) ? 0 : 1e12) from [100k:inf) - `P(info="Mobility reduction coefficient [V/m]"); + `P(desc="Mobility reduction coefficient [V/m]"); // - intrinsic model (channel length modulation and charge sharing, section 4.3) parameter real LAMBDA=0.5 from [0:inf) - `P(info="Depletion length coefficient (CLM)"); + `P(desc="Depletion length coefficient (CLM)"); parameter real WETA=0.25 from (-inf:inf) - `P(info="Narrow-channel effect coefficient"); + `P(desc="Narrow-channel effect coefficient"); parameter real LETA=0.1 from (-inf:inf) - `P(info="Short-channel effect coefficient"); + `P(desc="Short-channel effect coefficient"); // - intrinsic model (reverse short channel effect, section 4.4) parameter real Q0=0 from (-inf:inf) - `P(info="RSCE peak charge density [C/m^2]"); + `P(desc="RSCE peak charge density [C/m^2]"); parameter real LK=0.29u from [10n:inf) - `P(info="RSCE characteristic length [m]"); + `P(desc="RSCE characteristic length [m]"); // - intrinsic model (impact ionization, section 4.5) parameter real IBA=0 from (-inf:inf) - `P(info="First impact ionization coefficient [m^-1]"); + `P(desc="First impact ionization coefficient [m^-1]"); parameter real IBB=3e8 from [1e8:inf) - `P(info="Second impact ionization coefficient [V/m]"); + `P(desc="Second impact ionization coefficient [V/m]"); parameter real IBN=1 from [0.1:inf) - `P(info="Saturation voltage factor for impact ionization"); + `P(desc="Saturation voltage factor for impact ionization"); // - intrinsic model (temperature, section 4.6) parameter real TCV=1m from (-inf:inf) - `P(info="Threshold voltage TC [V/K]"); + `P(desc="Threshold voltage TC [V/K]"); parameter real BEX=-1.5 from (-inf:inf) - `P(info="Mobility temperature exponent"); + `P(desc="Mobility temperature exponent"); parameter real UCEX=0.8 from (-inf:inf) - `P(info="Longitudinal critical field temperature exponent"); + `P(desc="Longitudinal critical field temperature exponent"); parameter real IBBT=9e-4 from (-inf:inf) - `P(info="Temperature coefficient for IBB [K^-1]"); + `P(desc="Temperature coefficient for IBB [K^-1]"); // - intrinsic model (matching, section 4.7) parameter real AVTO=0 from (-inf:inf) - `P(info="Area related VTO mismatch parameter [Vm]"); + `P(desc="Area related VTO mismatch parameter [Vm]"); parameter real AKP=0 from (-inf:inf) - `P(info="Area related KP mismatch parameter [m]"); + `P(desc="Area related KP mismatch parameter [m]"); parameter real AGAMMA=0 from (-inf:inf) - `P(info="Area related GAMMA mismatch parameter [V^0.5*m]"); + `P(desc="Area related GAMMA mismatch parameter [V^0.5*m]"); // - intrinsic model (flicker noise, section 4.8) parameter real KF=0 from [0:inf) - `P(info="Flicker noise coefficient"); + `P(desc="Flicker noise coefficient"); parameter real AF=1 from (-inf:inf) - `P(info="Flicker noise exponent"); + `P(desc="Flicker noise exponent"); // - intrinsic model (setup, section 4.9) parameter real NQS=0 from [0:1] - `P(info="Non-quasi-static operation switch"); + `P(desc="Non-quasi-static operation switch"); parameter real SATLIM=exp(4) from (0:inf) - `P(info="Saturation limit (if/ir)"); + `P(desc="Saturation limit (if/ir)"); parameter real XQC=0.4 from [0:1] - `P(info="Charge/capacitance model selector"); + `P(desc="Charge/capacitance model selector"); // - external parasitic parameters parameter real HDIF=0 from [0:inf) - `P(info="S/D diffusion length (/2) [m]"); + `P(desc="S/D diffusion length (/2) [m]"); parameter real RSH=0 from [0:inf) - `P(info="S/D sheet resistance [ohm]"); + `P(desc="S/D sheet resistance [ohm]"); parameter real JS=0 from [0:inf) - `P(info="S/D junction saturation current density [A/m^2]"); + `P(desc="S/D junction saturation current density [A/m^2]"); parameter real JSW=0 from [0:inf) - `P(info="S/D junction sidewall saturation current density [A/m]"); + `P(desc="S/D junction sidewall saturation current density [A/m]"); parameter real XTI=0 from [0:inf) - `P(info="S/D diode saturation current temperature exponent"); + `P(desc="S/D diode saturation current temperature exponent"); parameter real N=1 from [0.5:10] - `P(info="S/D diode emission coefficient"); + `P(desc="S/D diode emission coefficient"); parameter real CJ=0 from [0:inf) - `P(info="S/D zero-bias junction capacitance per area [F/m^2]"); + `P(desc="S/D zero-bias junction capacitance per area [F/m^2]"); parameter real CJSW=0 from [0:inf) - `P(info="S/D zero-bias junction capacitance per perimeter [F/m]"); + `P(desc="S/D zero-bias junction capacitance per perimeter [F/m]"); parameter real PB=0.8 from (0:inf) - `P(info="S/D bottom junction builtin potential [V]"); + `P(desc="S/D bottom junction builtin potential [V]"); parameter real PBSW=PB from (0:inf) - `P(info="S/D sidewall junction builtin potential [V]"); + `P(desc="S/D sidewall junction builtin potential [V]"); parameter real MJ=0.5 from (0:inf) - `P(info="S/D bottom junction grading coefficient"); + `P(desc="S/D bottom junction grading coefficient"); parameter real MJSW=0.333 from (0:inf) - `P(info="S/D sidewall junction grading coefficient"); + `P(desc="S/D sidewall junction grading coefficient"); parameter real FC=0.5 from (0:inf) - `P(info="S/D bottom junction forward-bias threshold"); + `P(desc="S/D bottom junction forward-bias threshold"); parameter real FCSW=FC from (0:inf) - `P(info="S/D sidewall junction forward-bias threshold"); + `P(desc="S/D sidewall junction forward-bias threshold"); parameter real CGSO=0 from [0:inf) - `P(info="Gate-source overlap capacitance per width [F/m]"); + `P(desc="Gate-source overlap capacitance per width [F/m]"); parameter real CGDO=0 from [0:inf) - `P(info="Gate-drain overlap capacitance per width [F/m]"); + `P(desc="Gate-drain overlap capacitance per width [F/m]"); parameter real CGBO=0 from [0:inf) - `P(info="Gate-bulk overlap capacitance per length [F/m]"); + `P(desc="Gate-bulk overlap capacitance per length [F/m]"); // Instance parameters // - intrinsic model parameter real L=10u from [0:inf] - `P(type="instance" info="Drawn length [m]" unit="m"); + `P(type="instance" desc="Drawn length [m]" unit="m"); parameter real W=10u from [0:inf] - `P(type="instance" info="Drawn width [m]" unit="m"); + `P(type="instance" desc="Drawn width [m]" unit="m"); parameter real M=1 from [0:inf] - `P(type="instance" info="Parallel multiplier" unit="m"); + `P(type="instance" desc="Parallel multiplier" unit="m"); // parameter real N=1 from [0:inf] -// `P(type="instance" info="Series multiplier" unit="m"); +// `P(type="instance" desc="Series multiplier" unit="m"); // - external parasitics parameter real AD=((HDIF>0) ? (2*HDIF*W) : 0) from [0:inf) - `P(info="Drain area [m^2]" type="instance"); + `P(desc="Drain area [m^2]" type="instance"); parameter real AS=((HDIF>0) ? (2*HDIF*W) : 0) from [0:inf) - `P(info="Source area [m^2]" type="instance"); + `P(desc="Source area [m^2]" type="instance"); parameter real PD=((HDIF>0) ? (4*HDIF+2*W) : 0) from [0:inf) - `P(info="Drain perimeter [m]" type="instance"); + `P(desc="Drain perimeter [m]" type="instance"); parameter real PS=((HDIF>0) ? (4*HDIF+2*W) : 0) from [0:inf) - `P(info="Source perimeter [m]" type="instance"); + `P(desc="Source perimeter [m]" type="instance"); parameter real NRD=((HDIF>0) ? (HDIF/W) : 0) from [0:inf) - `P(info="Drain no. squares" type="instance"); + `P(desc="Drain no. squares" type="instance"); parameter real NRS=((HDIF>0) ? (HDIF/W) : 0) from [0:inf) - `P(info="Source no. squares" type="instance"); + `P(desc="Source no. squares" type="instance"); parameter real RS=((RSH>0) ? (RSH*NRS) : 0) from [0:inf) - `P(info="Source resistance [ohms]" type="instance"); + `P(desc="Source resistance [ohms]" type="instance"); parameter real RD=((RSH>0) ? (RSH*NRD) : 0) from [0:inf) - `P(info="Drain resistance [ohms]" type="instance"); + `P(desc="Drain resistance [ohms]" type="instance"); // Declaration of variables