From 7f8a7f1382f56b2fed36d8e98b695cc1c2ec2929 Mon Sep 17 00:00:00 2001 From: rlar Date: Tue, 11 Jul 2017 18:49:36 +0200 Subject: [PATCH] bjt504t, use (*desc*) instead of (*info*), useless, they have none --- .../devices/adms/mextram/admsva/bjt504t.va | 26 +-- .../adms/mextram/admsva/parameters.inc | 176 +++++++++--------- 2 files changed, 101 insertions(+), 101 deletions(-) diff --git a/src/spicelib/devices/adms/mextram/admsva/bjt504t.va b/src/spicelib/devices/adms/mextram/admsva/bjt504t.va index 5e5bbea38..4c868612b 100644 --- a/src/spicelib/devices/adms/mextram/admsva/bjt504t.va +++ b/src/spicelib/devices/adms/mextram/admsva/bjt504t.va @@ -13,22 +13,22 @@ module bjt504tva (c, b, e, s, dt); // External ports inout c, b, e, s, dt; - electrical c `P(info="external collector node"); - electrical b `P(info="external base node"); - electrical e `P(info="external emitter node"); - electrical s `P(info="external substrate node"); - electrical dt `P(info="external thermal node"); + electrical c `P(desc="external collector node"); + electrical b `P(desc="external base node"); + electrical e `P(desc="external emitter node"); + electrical s `P(desc="external substrate node"); + electrical dt `P(desc="external thermal node"); // Internal nodes - electrical c1 `P(info="internal collector node 1"); - electrical e1 `P(info="internal emitter node"); - electrical b1 `P(info="internal base node 1"); - electrical b2 `P(info="internal base node 2"); - electrical c2 `P(info="internal collector node 2"); - electrical c3 `P(info="internal collector node 3"); - electrical c4 `P(info="internal collector node 4"); + electrical c1 `P(desc="internal collector node 1"); + electrical e1 `P(desc="internal emitter node"); + electrical b1 `P(desc="internal base node 1"); + electrical b2 `P(desc="internal base node 2"); + electrical c2 `P(desc="internal collector node 2"); + electrical c3 `P(desc="internal collector node 3"); + electrical c4 `P(desc="internal collector node 4"); // For correlated noise implementation - electrical noi `P(info="internal noise node"); + electrical noi `P(desc="internal noise node"); `include "parameters.inc" `include "variables.inc" diff --git a/src/spicelib/devices/adms/mextram/admsva/parameters.inc b/src/spicelib/devices/adms/mextram/admsva/parameters.inc index 2d83a9029..a5daef6ac 100644 --- a/src/spicelib/devices/adms/mextram/admsva/parameters.inc +++ b/src/spicelib/devices/adms/mextram/admsva/parameters.inc @@ -1,209 +1,209 @@ // Mextram parameters parameter integer LEVEL = 504 from [504:505) - `ATTR(info="Model level"); + `ATTR(desc="Model level"); parameter real TREF = 25.0 from [-273.0:inf) - `ATTR(info="Reference temperature"); + `ATTR(desc="Reference temperature"); parameter real DTA = 0.0 - `ATTR(info="Difference between the local and global ambient temperatures"); + `ATTR(desc="Difference between the local and global ambient temperatures"); parameter integer EXMOD = 1 from [0:1] - `ATTR(info="Flag for extended modeling of the reverse current gain"); + `ATTR(desc="Flag for extended modeling of the reverse current gain"); parameter integer EXPHI = 1 from [0:1] - `ATTR(info="Flag for the distributed high-frequency effects in transient"); + `ATTR(desc="Flag for the distributed high-frequency effects in transient"); parameter integer EXAVL = 0 from [0:1] - `ATTR(info="Flag for extended modeling of avalanche currents"); + `ATTR(desc="Flag for extended modeling of avalanche currents"); parameter real IS = 22.0a from (0.0:inf) - `ATTR(info="Collector-emitter saturation current"); + `ATTR(desc="Collector-emitter saturation current"); parameter real IK = 0.1 from [1.0p:inf) - `ATTR(info="Collector-emitter high injection knee current"); + `ATTR(desc="Collector-emitter high injection knee current"); parameter real VER = 2.5 from [0.01:inf) - `ATTR(info="Reverse Early voltage"); + `ATTR(desc="Reverse Early voltage"); parameter real VEF = 44.0 from [0.01:inf) - `ATTR(info="Forward Early voltage"); + `ATTR(desc="Forward Early voltage"); parameter real BF = 215.0 from [0.1m:inf) - `ATTR(info="Ideal forward current gain"); + `ATTR(desc="Ideal forward current gain"); parameter real IBF = 2.7f from [0.0:inf) - `ATTR(info="Saturation current of the non-ideal forward base current"); + `ATTR(desc="Saturation current of the non-ideal forward base current"); parameter real MLF = 2.0 from [0.1:inf) - `ATTR(info="Non-ideality factor of the non-ideal forward base current"); + `ATTR(desc="Non-ideality factor of the non-ideal forward base current"); parameter real XIBI = 0.0 from [0.0:1.0] - `ATTR(info="Part of ideal base current that belongs to the sidewall"); + `ATTR(desc="Part of ideal base current that belongs to the sidewall"); // begin: RvdT, November 2008, BE tunneling current parameters: parameter real IZEB = 0.0 from [0.0:inf) - `ATTR(info="Pre-factor of emitter-base Zener tunneling current"); + `ATTR(desc="Pre-factor of emitter-base Zener tunneling current"); parameter real NZEB = 22.0 from [0.0:inf) - `ATTR(info="Coefficient of emitter-base Zener tunneling current"); + `ATTR(desc="Coefficient of emitter-base Zener tunneling current"); // end: RvdT, November 2008, EB tunneling current parameters: parameter real BRI = 7.0 from [1.0e-4:inf) - `ATTR(info="Ideal reverse current gain"); + `ATTR(desc="Ideal reverse current gain"); parameter real IBR = 1.0f from [0.0:inf) - `ATTR(info="Saturation current of the non-ideal reverse base current"); + `ATTR(desc="Saturation current of the non-ideal reverse base current"); parameter real VLR = 0.2 - `ATTR(info="Cross-over voltage of the non-ideal reverse base current"); + `ATTR(desc="Cross-over voltage of the non-ideal reverse base current"); parameter real XEXT = 0.63 from [0.0:1.0] - `ATTR(info="Part of currents and charges that belong to extrinsic region"); + `ATTR(desc="Part of currents and charges that belong to extrinsic region"); parameter real WAVL = 1.1u from [1.0n:inf) - `ATTR(info="Epilayer thickness used in weak-avalanche model"); + `ATTR(desc="Epilayer thickness used in weak-avalanche model"); parameter real VAVL = 3.0 from [0.01:inf) - `ATTR(info="Voltage determining curvature of avalanche current"); + `ATTR(desc="Voltage determining curvature of avalanche current"); parameter real SFH = 0.3 from [0.0:inf) - `ATTR(info="Current spreading factor of avalanche model when EXAVL=1"); + `ATTR(desc="Current spreading factor of avalanche model when EXAVL=1"); // RvdT, 22-02-2008: for MXT 504.7 // increased lower clipping values RE, RBC, RBV, RCC, RCV, SCRCV // from 1u to 1m: parameter real RE = 5.0 from [1.0m:inf) - `ATTR(info="Emitter resistance"); + `ATTR(desc="Emitter resistance"); parameter real RBC = 23.0 from [1.0m:inf) - `ATTR(info="Constant part of the base resistance"); + `ATTR(desc="Constant part of the base resistance"); parameter real RBV = 18.0 from [1.0m:inf) - `ATTR(info="Zero-bias value of the variable part of the base resistance"); + `ATTR(desc="Zero-bias value of the variable part of the base resistance"); parameter real RCC = 12.0 from [1.0m:inf) - `ATTR(info="Constant part of the collector resistance"); + `ATTR(desc="Constant part of the collector resistance"); parameter real RCV = 150.0 from [1.0m:inf) - `ATTR(info="Resistance of the un-modulated epilayer"); + `ATTR(desc="Resistance of the un-modulated epilayer"); parameter real SCRCV = 1250.0 from [1.0m:inf) - `ATTR(info="Space charge resistance of the epilayer"); + `ATTR(desc="Space charge resistance of the epilayer"); parameter real IHC = 4.0m from [1.0p:inf) - `ATTR(info="Critical current for velocity saturation in the epilayer"); + `ATTR(desc="Critical current for velocity saturation in the epilayer"); parameter real AXI = 0.3 from [0.02:inf) - `ATTR(info="Smoothness parameter for the onset of quasi-saturation"); + `ATTR(desc="Smoothness parameter for the onset of quasi-saturation"); parameter real CJE = 73.0f from [0.0:inf) - `ATTR(info="Zero-bias emitter-base depletion capacitance"); + `ATTR(desc="Zero-bias emitter-base depletion capacitance"); parameter real VDE = 0.95 from [0.05:inf) - `ATTR(info="Emitter-base diffusion voltage"); + `ATTR(desc="Emitter-base diffusion voltage"); parameter real PE = 0.4 from [0.01:0.99) - `ATTR(info="Emitter-base grading coefficient"); + `ATTR(desc="Emitter-base grading coefficient"); parameter real XCJE = 0.4 from [0.0:1.0] - `ATTR(info="Sidewall fraction of the emitter-base depletion capacitance"); + `ATTR(desc="Sidewall fraction of the emitter-base depletion capacitance"); parameter real CBEO = 0.0 from [0.0:inf) - `ATTR(info="Emitter-base overlap capacitance"); + `ATTR(desc="Emitter-base overlap capacitance"); parameter real CJC = 78.0f from [0.0:inf) - `ATTR(info="Zero-bias collector-base depletion capacitance"); + `ATTR(desc="Zero-bias collector-base depletion capacitance"); parameter real VDC = 0.68 from [0.05:inf) - `ATTR(info="Collector-base diffusion voltage"); + `ATTR(desc="Collector-base diffusion voltage"); parameter real PC = 0.5 from [0.01:0.99) - `ATTR(info="Collector-base grading coefficient"); + `ATTR(desc="Collector-base grading coefficient"); parameter real XP = 0.35 from [0.0:0.99) - `ATTR(info="Constant part of Cjc"); + `ATTR(desc="Constant part of Cjc"); parameter real MC = 0.5 from [0.0:1.0) - `ATTR(info="Coefficient for current modulation of CB depletion capacitance"); + `ATTR(desc="Coefficient for current modulation of CB depletion capacitance"); parameter real XCJC = 32.0m from [0.0:1.0] - `ATTR(info="Fraction of CB depletion capacitance under the emitter"); + `ATTR(desc="Fraction of CB depletion capacitance under the emitter"); // RvdT, 30-11-2007: introduced RCBLX and RCBLI: parameter real RCBLX = 0.0 from [0.0:inf) - `ATTR(info="Resistance Collector Buried Layer eXtrinsic"); + `ATTR(desc="Resistance Collector Buried Layer eXtrinsic"); parameter real RCBLI = 0.0 from [0.0:inf) - `ATTR(info="Resistance Collector Buried Layer Intrinsic"); + `ATTR(desc="Resistance Collector Buried Layer Intrinsic"); parameter real CBCO = 0.0 from [0.0:inf) - `ATTR(info="Collector-base overlap capacitance"); + `ATTR(desc="Collector-base overlap capacitance"); parameter real MTAU = 1.0 from [0.1:inf) - `ATTR(info="Non-ideality factor of the emitter stored charge"); + `ATTR(desc="Non-ideality factor of the emitter stored charge"); parameter real TAUE = 2.0p from [0.0:inf) - `ATTR(info="Minimum transit time of stored emitter charge"); + `ATTR(desc="Minimum transit time of stored emitter charge"); parameter real TAUB = 4.2p from (0.0:inf) - `ATTR(info="Transit time of stored base sharge"); + `ATTR(desc="Transit time of stored base sharge"); parameter real TEPI = 41.0p from [0.0:inf) - `ATTR(info="Transit time of stored epilayer charge"); + `ATTR(desc="Transit time of stored epilayer charge"); parameter real TAUR = 520.0p from [0.0:inf) - `ATTR(info="Transit time of reverse extrinsic stored base charge"); + `ATTR(desc="Transit time of reverse extrinsic stored base charge"); parameter real DEG = 0.0 - `ATTR(info="Bandgap difference over the base"); + `ATTR(desc="Bandgap difference over the base"); parameter real XREC = 0.0 from [0.0:inf) - `ATTR(info="Pre-factor of the recombination part of Ib1"); + `ATTR(desc="Pre-factor of the recombination part of Ib1"); parameter real AQBO = 0.3 - `ATTR(info="Temperature coefficient of the zero-bias base charge"); + `ATTR(desc="Temperature coefficient of the zero-bias base charge"); parameter real AE = 0.0 - `ATTR(info="Temperature coefficient of the resistivity of the emitter"); + `ATTR(desc="Temperature coefficient of the resistivity of the emitter"); parameter real AB = 1.0 - `ATTR(info="Temperature coefficient of the resistivity of the base"); + `ATTR(desc="Temperature coefficient of the resistivity of the base"); parameter real AEPI = 2.5 - `ATTR(info="Temperature coefficient of the resistivity of the epilayer"); + `ATTR(desc="Temperature coefficient of the resistivity of the epilayer"); parameter real AEX = 0.62 - `ATTR(info="Temperature coefficient of the resistivity of the extrinsic base"); + `ATTR(desc="Temperature coefficient of the resistivity of the extrinsic base"); parameter real AC = 2.0 - `ATTR(info="Temperature coefficient of the resistivity of the collector contact"); + `ATTR(desc="Temperature coefficient of the resistivity of the collector contact"); // RvdT, 30-01-2007: introduced ACBL parameter real ACBL = 2.0 from [0.0:inf) - `ATTR(info="Temperature coefficient of the resistivity of the collector buried layer"); + `ATTR(desc="Temperature coefficient of the resistivity of the collector buried layer"); parameter real DVGBF = 50.0m - `ATTR(info="Band-gap voltage difference of the forward current gain"); + `ATTR(desc="Band-gap voltage difference of the forward current gain"); parameter real DVGBR = 45.0m - `ATTR(info="Band-gap voltage difference of the reverse current gain"); + `ATTR(desc="Band-gap voltage difference of the reverse current gain"); parameter real VGB = 1.17 from [0.1:inf) - `ATTR(info="Band-gap voltage of the base"); + `ATTR(desc="Band-gap voltage of the base"); parameter real VGC = 1.18 from [0.1:inf) - `ATTR(info="Band-gap voltage of the collector"); + `ATTR(desc="Band-gap voltage of the collector"); parameter real VGJ = 1.15 from [0.1:inf) - `ATTR(info="Band-gap voltage recombination emitter-base junction"); + `ATTR(desc="Band-gap voltage recombination emitter-base junction"); parameter real VGZEB = 1.15 from [0.1:inf) - `ATTR(info="Band-gap voltage at Tref of Zener effect emitter-base junction"); + `ATTR(desc="Band-gap voltage at Tref of Zener effect emitter-base junction"); parameter real AVGEB = 4.73e-4 from (-inf:inf) - `ATTR(info="Temperature coefficient band-gap voltage for Zener effect emitter-base junction"); + `ATTR(desc="Temperature coefficient band-gap voltage for Zener effect emitter-base junction"); parameter real TVGEB = 636.0 from [0.0:inf) - `ATTR(info="Temperature coefficient band-gap voltage for Zener effect emitter-base junction"); + `ATTR(desc="Temperature coefficient band-gap voltage for Zener effect emitter-base junction"); parameter real DVGTE = 0.05 - `ATTR(info="Band-gap voltage difference of emitter stored charge"); + `ATTR(desc="Band-gap voltage difference of emitter stored charge"); parameter real DAIS = 0.0 - `ATTR(info="Fine tuning of temperature dependence of C-E saturation current"); + `ATTR(desc="Fine tuning of temperature dependence of C-E saturation current"); parameter real AF = 2.0 from [0.01:inf) - `ATTR(info="Exponent of the Flicker-noise"); + `ATTR(desc="Exponent of the Flicker-noise"); parameter real KF = 20.0p from [0.0:inf) - `ATTR(info="Flicker-noise coefficient of the ideal base current"); + `ATTR(desc="Flicker-noise coefficient of the ideal base current"); parameter real KFN = 20.0p from [0.0:inf) - `ATTR(info="Flicker-noise coefficient of the non-ideal base current"); + `ATTR(desc="Flicker-noise coefficient of the non-ideal base current"); parameter integer KAVL = 0 from [0:1] - `ATTR(info="Switch for white noise contribution due to avalanche"); + `ATTR(desc="Switch for white noise contribution due to avalanche"); `ifdef SUBSTRATE parameter real ISS = 48.0a from [0.0:inf) - `ATTR(info="Base-substrate saturation current"); + `ATTR(desc="Base-substrate saturation current"); parameter real ICSS = -1.0 from (-inf:inf) - `ATTR(info="Collector-substrate ideal saturation current"); + `ATTR(desc="Collector-substrate ideal saturation current"); parameter real IKS = 250.0u from [1.0p:inf) - `ATTR(info="Base-substrate high injection knee current"); + `ATTR(desc="Base-substrate high injection knee current"); parameter real CJS = 315.0f from [0:inf) - `ATTR(info="Zero-bias collector-substrate depletion capacitance"); + `ATTR(desc="Zero-bias collector-substrate depletion capacitance"); parameter real VDS = 0.62 from (0.05:inf) - `ATTR(info="Collector-substrate diffusion voltage"); + `ATTR(desc="Collector-substrate diffusion voltage"); parameter real PS = 0.34 from (0.01:0.99) - `ATTR(info="Collector-substrate grading coefficient"); + `ATTR(desc="Collector-substrate grading coefficient"); parameter real VGS = 1.20 from [0.1:inf) - `ATTR(info="band-gap voltage of the substrate"); + `ATTR(desc="band-gap voltage of the substrate"); parameter real AS = 1.58 - `ATTR(info="Substrate temperature coefficient"); + `ATTR(desc="Substrate temperature coefficient"); parameter real ASUB = 2.0 - `ATTR(info="Temperature coefficient for mobility of minorities in the substrate"); + `ATTR(desc="Temperature coefficient for mobility of minorities in the substrate"); `endif `ifdef SELFHEATING parameter real RTH = 300.0 from (0.0:inf) - `ATTR(info="Thermal resistance"); + `ATTR(desc="Thermal resistance"); parameter real CTH = 3.0n from [0.0:inf) - `ATTR(info="Thermal capacitance"); + `ATTR(desc="Thermal capacitance"); parameter real ATH = 0.0 - `ATTR(info="Temperature coefficient of the thermal resistance"); + `ATTR(desc="Temperature coefficient of the thermal resistance"); `endif parameter real MULT = 1.0 from (0.0:inf) - `ATTR(info="Multiplication factor"); + `ATTR(desc="Multiplication factor"); // Non-standard (additional) model parameters // (introduced for the users' convenience) `ifdef insideADMS parameter integer TYPE = 1 from [-1:1] - `ATTR(info="Flag for NPN (1) or PNP (-1) transistor type"); + `ATTR(desc="Flag for NPN (1) or PNP (-1) transistor type"); `else parameter integer TYPE = 1 from [-1:1] exclude 0; `endif parameter real GMIN = 1.0e-13 from (0:1e-10] - `ATTR(info="Minimum conductance"); + `ATTR(desc="Minimum conductance");