// Copyright (c) 2000-2007, NXP Semiconductor
// Copyright (c) 2007-2014, Delft University of Technology
// Copyright (c) 2015, Auburn University
// All rights reserved, see IP_NOTICE_DISCLAIMER_LICENSE for further information.

// Temperature scaling of parameters   
      
   // The excess transistor temperature due to the self-heating 
`ifdef SELFHEATING
   Tki = V(dt);                      
   // *** Convergence related smoothing ***
   if (Tki < 0.0) begin  
       Tki = - ln(1.0 - Tki);  
   end 
   `linLog(Vdt, Tki, 200.0);
//   `min_logexp(Vdt, Tki, 200.0, 10.0);  
`else
   Vdt = 0.0;
`endif
                                       
   // Temperature variables
   Tk   = Tamb + Vdt;      
    
   tN  = Tk / Trk;    
   Vt  = `KBdivQQ * Tk;    
   Vtr = `KBdivQQ * Trk;   
   VtINV = 1.0 / Vt;   
   VtrINV = 1.0 / Vtr;     
   VdtINV = VtINV - VtrINV;

   lntN = ln(tN) ;

   // begin: RvdT, November 2008, "Zener tunneling model"
//      VGZEB_T = VGZEBOK - AVGEB*Tk*Tk / (Tk + TVGEB) ;
    `max_logexp(VGZEB_T, VGZEBOK - AVGEB*Tk*Tk / (Tk + TVGEB), 0.05, 0.1) ;

   // end: RvdT, November 2008, "Zener tunneling model"

  // Depletion capacitances   
   
   UdeT = -3.0 * Vt * ln(tN) + VDE * tN + (1.0 - tN) * VGB;   
   `max_logexp(VDE_T, `VDLOW, UdeT, Vt);  
   
   UdcT = -3.0 * Vt * ln(tN) + VDC * tN + (1.0 - tN) * VGC;   
   `max_logexp(VDC_T, `VDLOW, UdcT, Vt);  
 
`ifdef SUBSTRATE
   UdsT = -3.0 * Vt * ln(tN) + VDS * tN + (1.0 - tN) * VGS;   
   `max_logexp(VDS_T, `VDLOW, UdsT, Vt);  
`endif
   inv_VDE_T = 1.0 / VDE_T ;
   CJE_T_div_CJE = pow(VDE * inv_VDE_T, PE);
   CJE_T = CJE * CJE_T_div_CJE ;   

`ifdef SUBSTRATE
   CJS_T = CJS * pow(VDS / VDS_T, PS);   
`endif
                                         
   CJCscale = ((1.0 - XP) * pow(VDC / VDC_T, PC) + XP);   
   CJCscaleINV = 1.0 / CJCscale;    
   
   CJC_T = CJC * CJCscale;   
   XP_T  = XP  * CJCscaleINV;   
      
   // Resistances   

// RvdT, November 2008:
// Instead of the following definition
//   RE_T  = RE  * pow(tN, AE);
// we use, here, and in all following powers of tN, 
// the following computationally cheaper implementation: 
   RE_T  = RE  * exp(lntN * AE);         
// This is based on the observation that exp() is faster than pow().
// Acknowledgement due to Geoffrey Coram.

   RBV_T = RBV * exp(lntN * (AB - AQBO));   
   RBC_T = RBC * exp(lntN * AEX);   

// RvdT, 30-11-2007: new collector resistances RCCxx_T, RCCex_T, RCCin_T
`ifdef insideADMS
//dw limiting all the RCXXX to MIN_R
   if (RCC > 0.0)
       RCCxx_T = RCC * exp(lntN * AC);
   else
       RCCxx_T = `MIN_R * exp(lntN * AC);
   if (RCBLX > 0.0)
       RCCex_T = RCBLX * exp(lntN * ACBL);
   else
       RCCex_T = `MIN_R * exp(lntN * ACBL);
   if (RCBLI > 0.0)
       RCCin_T = RCBLI * exp(lntN * ACBL);
   else
       RCCin_T = `MIN_R * exp(lntN * ACBL);
`else
    RCCxx_T = RCC * exp(lntN * AC);
    RCCex_T = RCBLX * exp(lntN * ACBL);
    RCCin_T = RCBLI * exp(lntN * ACBL);
`endif

   RCV_T = RCV * exp(lntN * AEPI);    
   
   // Current gains   
      
   BF_T  = BF  * exp(lntN * (AE - AB - AQBO)) * exp(-DVGBF * VdtINV);    
   BRI_T = BRI * exp(-DVGBR * VdtINV);    
   
   // Currents and voltages   
   
   IS_T  = IS  * exp(lntN * (4.0 - AB - AQBO + DAIS)) * exp(-VGB * VdtINV);    
   IK_T  = IK  * exp(lntN * (1.0 - AB));   
   IBF_T = IBF * exp(lntN * (6.0 - 2.0 * MLF)) * exp(-VGJ * VdtINV / MLF);   
   IBR_T = IBR * tN * tN * exp(-VGC * VdtINV / 2.0);   
 
// begin  RvdT, November 2008, MXT504.8_alpha
// T-scaling BE tunneling:
//
     x = pow(VGZEB_T * inv_VGZEB_Tr, -0.5) ;
//   y = pow(VDE_T * inv_VDE, PE) ;
// more efficient, because we need both y and 1.0 / y:
   y = 1.0 / CJE_T_div_CJE ;
// definition:
// nZEB_T = NZEB* pow(VGZEB_T/VGZEB_Tr, 1.5) * pow(VDE_T / VDE, PE-1) ;
// more efficient implementation:
//   nZEB_T = NZEB* VGZEB_T * VGZEB_T  * x * y * VDE /(VDE_T*VGZEB_Tr*VGZEB_Tr) ;
   nZEB_T = NZEB* VGZEB_T * VGZEB_T  * x * y * VDE * inv_VDE_T*inv_VGZEB_Tr*inv_VGZEB_Tr ;

// definition:
// IZEB_T = IZEB* pow(VGZEB_T/VGZEB_Tr, -0.5) * pow(VDE_T / VDE, 2-PE) * exp(NZEB-nZEB_T);
// more efficient implementation:
   IZEB_T = IZEB* x * VDE_T  * VDE_T * inv_VDE * inv_VDE * CJE_T_div_CJE * exp(NZEB-nZEB_T) ;
//
// end  RvdT, November 2008, MXT504.8_alpha

   x = exp(lntN * AQBO) ;
   VEF_T = VEF * x * CJCscaleINV;   
//   VER_T = VER * x * pow(VDE / VDE_T, -PE);   
   VER_T = VER * x * y;   

`ifdef SUBSTRATE
   ISS_T = ISS * exp(lntN * (4.0 - AS)) * exp(-VGS * VdtINV);    
// New 504.9:
   ICSS_T = ICSS * exp(lntN * (3.5 - 0.5 * ASUB)) * exp(-VGS * VdtINV);    
// End New 504.9.

   if ((ISS_T > 0.0))    
      IKS_T = IKS * exp(lntN * (1.0 - AS)) * (IS_T / IS) * (ISS / ISS_T);   
   else    
      IKS_T = IKS * exp(lntN * (1.0 - AS));   
`endif
       
   // Transit times   
   
   TAUE_T = TAUE * exp(lntN * (AB - 2.0)) * exp(-DVGTE * VdtINV);   
   TAUB_T = TAUB * exp(lntN * (AQBO + AB - 1.0));   
   TEPI_T = TEPI * exp(lntN * (AEPI - 1.0));    
   TAUR_T = TAUR * (TAUB_T + TEPI_T) / (TAUB + TEPI);    
      
   // Avalanche constant      
                             
   Tk300 = Tk - 300.0;
// RvdT, 15-02-2008: prevent division by zero and overflow at high temperatures:
   if (Tk < 525.0)
    begin
     BnT = Bn * (1.0 + 7.2e-4 * Tk300 - 1.6e-6 * Tk300 * Tk300) ;   
    end
   else
    begin
     BnT = Bn * 1.081 ;
    end
  
   // Heterojunction features   
   
   DEG_T = DEG * exp(lntN * AQBO);      
   
`ifdef SELFHEATING
  // Temperature scaling of the thermal resistance   
 
   RTH_Tamb = RTH * pow(Tamb / Trk, ATH); 
`endif
   
// MULT - scaling    
     
   IS_TM  = IS_T  * MULT;       
   IK_TM  = IK_T  * MULT;   
   IBF_TM = IBF_T * MULT;    
   IBR_TM = IBR_T * MULT;    
// RvdT: November 2008, Zener tunneling parameters
   IZEB_TM = IZEB_T * MULT ;

// end Zener tunneling parameters   
 



  IHC_M  = IHC   * MULT;    
`ifdef SUBSTRATE
    ISS_TM = ISS_T * MULT;    
// New: 504.9
   ICSS_TM = ICSS_T * MULT;    
    IKS_TM = IKS_T * MULT;    
`endif
    CJE_TM = CJE_T * MULT;    
    CJC_TM = CJC_T * MULT;    

// begin  RvdT, 28-10-2008, MXT504.8_alpha
// Base-emitter tunneling current Mult scaling:
//   BTJE_TM = BTJE_T * MULT;
// end  RvdT, 28-10-2008, MXT504.8_alpha


`ifdef SUBSTRATE
   CJS_TM = CJS_T * MULT;    
`endif
                
   RE_TM      = RE_T     * invMULT;       
   RBC_TM     = RBC_T    * invMULT;   
   RBV_TM     = RBV_T    * invMULT;    
// RvdT, 30-01-2007: new collector resistances:
   RCCxx_TM   = RCCxx_T  * invMULT;    
   RCCex_TM   = RCCex_T  * invMULT;    
   RCCin_TM   = RCCin_T  * invMULT;    
   RCV_TM     = RCV_T    * invMULT;    
 

// RvdT, 03-12-2007: new collector conductances
`ifdef insideADMS
//dw we have limited all the RCXXX to MIN_R
   GCCxx_TM = 1.0 / RCCxx_TM ;
   GCCex_TM = 1.0 / RCCex_TM ;
   GCCin_TM = 1.0 / RCCin_TM ;
`else
   if (RCC > 0.0) 
    begin 
     GCCxx_TM = 1.0 / RCCxx_TM ;   
    end
   else
    begin
     GCCxx_TM = 0 ;   
    end 

   if (RCBLX > 0.0) 
    begin 
     GCCex_TM = 1.0 / RCCex_TM ;   
    end
   else
    begin
     GCCex_TM = 0 ;   
    end 

   if (RCBLI > 0.0) 
    begin 
     GCCin_TM = 1.0 / RCCin_TM ;   
    end
   else
    begin
     GCCin_TM = 0 ;   
    end 
`endif

`ifdef SELFHEATING
   RTH_Tamb_M = RTH_Tamb * invMULT;    
`endif
