DS 1 200 4;
9 f4b;
L NP;	B 40 8 20 24;
	B 8 100 52 50;
	B 8 12 28 50;
	B 8 12 12 50;
	B 24 24 20 68;
	B 8 8 80 24;
	B 8 8 100 98;
	B 8 8 100 50;
	B 8 8 100 34;
L ND;	B 68 8 42 36;
	B 4 4 30 14;
	B 4 4 10 14;
	B 24 16 20 24;
	B 8 4 20 42;
	B 8 4 72 30;
	B 8 28 20 70;
	B 8 8 100 66;
	B 8 8 100 50;
	B 8 8 100 34;
L NM;	B 56 16 56 8;
	B 12 16 6 8;
	B 56 16 56 92;
	B 12 16 6 92;
	B 8 8 -56 148;
	B 8 8 252 -56;
	B 8 8 100 82;
L NI;	B 8 24 20 68;
	B 8 8 100 34;
L NB;	B 8 12 20 50;
	B 8 8 72 24;
	B 8 8 100 18;
0V 12 0 12 16 28 16 28 0 12 0 28 16;
0V 28 0 12 16;
0V 12 84 12 100 28 100 28 84 12 84 28 100;
0V 28 84 12 100;
0V 96 -2 96 6 104 6 104 -2 96 -2 104 6;
0V 96 6 104 -2;
2A "In" T 4 24;
0V 4 24 4 24 4 24 4 24 4 24;
2A "Vdd" T 4 92;
0V 4 92 4 92 4 92 4 92 4 92;
2A "GND" T 4 8;
0V 4 8 4 8 4 8 4 8 4 8;
2A "Phi" T 52 68;
0V 52 68 52 68 52 68 52 68 52 68;
2A "Out" T 80 24;
0V 80 24 80 24 80 24 80 24 80 24;
2L "Depletion-FET" T 108 32;
0V 108 32 108 32 108 32 108 32 108 32;
2L "Enhancement-FET" T 108 48;
0V 108 48 108 48 108 48 108 48 108 48;
2L "Diffusion" T 108 64;
0V 108 64 108 64 108 64 108 64 108 64;
2L "Metal" T 108 80;
0V 108 80 108 80 108 80 108 80 108 80;
2L "Polysilicon" T 108 96;
0V 108 96 108 96 108 96 108 96 108 96;
2L "Diff-Metal-Contact" T 108 0;
0V 108 0 108 0 108 0 108 0 108 0;
2L "Buried-Contact" T 108 16;
0V 108 16 108 16 108 16 108 16 108 16;
DF;
C 1;
End