# 
#  nmos.tech --
# 
#  Defines the MOSIS 4.0 micron NMOS technology for Magic.  Some
#  of the characteristics of this technology are:
# 
#  1. 1 level of metal.
#  2. Buried contacts.
#  3. No butting contacts.
# 
#  Copyright (C) 1985 Regents of the University of California
#  All rights reserved.
# 
#  sccsid @(#)nmos.tech	3.73 MAGIC (Berkeley) 11/22/85
#  

tech
    format 35
    nmos
end

version
    version 0
    description "MOSIS 4.0 micron NMOS"
    requires magic-8.3.0
end

planes
    active,diff,poly_diff
    metal
end

types
    active	polysilicon,poly,red
    active	diffusion,diff,green
    metal	metal,blue
    active	poly_metal_contact,pmc
    active	diff_metal_contact,dmc
    active	enhancement_fet,efet
    active	depletion_fet,dfet
    active	depletion_capacitor,dcap
    active	buried_contact,bc
    metal	glass_contact,glass
end

styles
    styletype mos

    polysilicon			1	
    diffusion			2	
    metal			20
    enhancement_fet		6
    enhancement_fet		7
    depletion_fet		6
    depletion_fet		10
    depletion_capacitor		6
    depletion_capacitor		11
    buried_contact		6
    buried_contact		33
    poly_metal_contact		1	
    poly_metal_contact		20
    poly_metal_contact		32
    diff_metal_contact		2	
    diff_metal_contact		20
    diff_metal_contact		32
    glass_contact		20
    glass_contact		34

    error_s			42
    error_p			42
    error_ps			42

    # Hint layers
    magnet			39
    fence			38
    rotate			37
end

contact
    pmc		poly	metal
    dmc		diff	metal
end

aliases

 allDiff    diff,dmc,bc,efet,dfet,dcap
 allPoly    poly,pmc,bc,efet,dfet,dcap
 tran	    efet,dfet
 allMetal   metal,pmc,dmc,glass
 spP	    (space,poly,pmc)/a
 sdD	    (space,diff,dmc)/a
 notDmc	    space,metal,pmc,glass
 notPmc	    space,metal,dmc,glass
 allButFet  (space,diff,poly,dmc,pmc,bc)/a
 allpdTypes (space,diff,poly,dmc,pmc,bc,dfet,dcap,efet)/a

end

compose
#  The following rule allows transistors to be built up of poly and diff */
    compose	efet	poly diff

#  The following rules allow poly or diff to be erased from fets or bcs */
    decompose	dfet	poly diff
    decompose	dcap	poly diff
    decompose	bc	poly diff

#  The following lets us erase metal from a glass_contact to get space */
    erase	glass	metal	space
end

# 
#  Electrical connectivity.  Each tile in the group on the left
#  is considered to be connected to each tile in the group on
#  the right.  Tiles within the groups are not necessarily
#  connected to each other.
#

connect
    poly	pmc,efet,dfet,dcap,bc
    diff	bc,dmc
    efet	pmc,dmc,bc,dfet,dcap
    dfet	pmc,dmc,bc,dcap
    dcap	pmc,dmc,bc
    pmc		dmc,bc
    dmc		bc
    metal	glass,pmc,dmc
    glass	pmc,dmc
end

#  Information used to generate CIF files.  The only tricky business
#  is to merge necks between adjacent implants or buried windows.
#  The grow-shrink does this.  Also, note that labels on Magic layers
#  get attached to the first CIF layer containing that Magic layer
#  in an "or" or "bloat-or" statement.  This makes order important
#  (for example, we want transistor labels to attach to the poly gate).
#  

cifoutput
style lambda=2
    scalefactor 200 100
    layer NP poly,pmc,efet,dfet,dcap,bc
	labels poly,efet,dfet,dcap,bc
	calma 1 1
    layer ND diff,dmc,efet,dfet,dcap,bc
	labels diff
	calma 2 1
    layer NM metal,pmc,dmc,glass
	labels metal,pmc,dmc,glass
	calma 3 1
    layer NI
	bloat-or dfet,dcap * 200 diff,bc 400
	grow 100
	shrink 100
	calma 4 1
    layer NC dmc
	squares 400
	calma 5 1
    layer NC pmc
	squares 400
	calma 6 1
    layer NG glass
	calma 7 1
    layer NB
	bloat-or bc * 200 diff,dmc 400 dfet 0
	grow 100
	shrink 100
	calma 8 1
end

#  Information on how to read CIF files.  Read in all the CIF layers,
#  then perform geometric operations to get the Magic layers.  The
#  order in which the Magic layers are generated is important!
#

cifinput
style lambda=2
    scalefactor 200
    layer poly NP
	labels NP
    layer diff ND
	labels ND
    layer metal NM
	labels NM
    layer efet NP
	and ND
    layer dfet NI
	and NP
	and ND
    layer pmc NC
	grow 200
	and NM
	and NP
    layer dmc NC
	grow 200
	and NM
	and ND
    #  Buried contacts must be generated after transistors, since they
    #  override transistors.
    #
    layer bc NB
	and NP
	and ND
    layer glass NG
end

mzrouter
 style irouter
   layer    metal   32	32  256	1
   layer    poly    64	64  256	1
   contact  pmc	    metal   poly    1024
end

# 
#  DRC information
#     Width, spacing and edge rules are "compiled" into rules table entries.
# 
#  width: types in the mask, taken collectively, must have the given width
# 
#  spacing: types in mask1 must be separated by distance from types in mask2
# 
#  edge: explict entries for the rules table --
#        LHS   RHS   distance   types allowed on RHS   corner mask  reason
# 
#        All combinations of single elements of the LHS and RHS masks
#        are used to form a rule.
# 

drc
width	allDiff		2	"Diffusion width must be at least 2"
width	dmc		4	"Metal_diff contact width must be at least 4"
width	allPoly		2	"Polysilicon width must be at least 2"
width	pmc	  	4	"Metal_poly contact width must be at least 4"
width	bc	  	2   	"Buried contact width must be at least 2"
width	efet		2	"Enhancement FET width must be at least 2"
width	dfet		2 	"Depletion FET width must be at least 2"
width	dcap		2	"Depletion capacitor width must be at least 2"
width	allMetal	3	"Metal width must be at least 3"

spacing	allDiff	allDiff	3	touching_ok \
    "Diff-diff separation must be at least 3"
spacing	allPoly	allPoly	2	touching_ok \
    "Poly-poly separation must be at least 2"
spacing	tran	pmc,dmc  1	touching_illegal \
    "Transistor-contact separation must be at least 1"
spacing	efet	dfet,dcap 3	touching_illegal \
    "Enhancement-depletion transistor separation must be at least 3"
spacing	allMetal allMetal 3	touching_ok \
    "Metal-metal separation must be at least 3"
	# 
	#  Diff and poly cannot be adjacent, except at corners where
	#  the intermediate material is "bc", "efet", "dfet", or "dcap".
	#  Thus, there is no need for rules with RHS equal to "Bef".
	#  But corner extension applies if the intermediate material is "s".
	#  For this reason, the first edge rule CANNOT be rewritten as
	#        "edge diff pP 1 0 pP 1".
        # 
edge	diff	spP	1	(space)/a	spP	1 \
    "Diff-poly separation must be at least 1"
edge	poly	sdD	1	(space)/a	sdD	1 \
    "Diff-poly separation must be at least 1"
	# 
	# Allow dmc and pmc to be adjacent since they are electrically shorted.
	#
edge    dmc     (space,poly)/a	1	(space)/a	(space,poly)/a  1 \
    "Diff-poly separation must be at least 1"
edge	pmc	(space,diff)/a	1	(space)/a	(space,diff)/a 	1 \
    "Diff-poly separation must be at least 1"

	# 
	# Don't let pmc and dmc have convex shapes, since this may interfere
	# with the via-generation process.  The corner check in the rules
	# below does this.  Also don't let contacts overlap between cells
	# unless they do so exactly.
	#

edge4way  dmc	notDmc	1	notDmc	notDmc,dmc	1 \
    "Diffusion-metal contacts must be rectangular"
edge4way  pmc	notPmc	1	notPmc	notPmc,pmc	1 \
    "Poly-metal contacts must be rectangular"
exact_overlap pmc,dmc
	# 
	# Transistors cannot touch space, except in corners.
	# The corner mask is set to 0 to prevent checking there.
        #
edge	tran	(space)/a	1	0	0	0 \
    "Transistor overhang is missing"
edge	(space)/a	tran	1	0	0	0 \
    "Transistor overhang is missing"
	# 
	#  Buried contacts must be 3 lambda from efets in all cases,
	#  and 4 lambda in some.  Depends on the orientation of the
	#  buried contact implant.  The 4x3 corner checks ON BOTH
	#  SIDES solve the problem.  Buried contacts may abut
	#  depletion transistors, but only if the transistors are
	#  fairly long (otherwise, a misalignment in the buried
	#  window mask may make a huge difference in the transistor's
	#  effective length).
	#
spacing	 bc	efet	 3	touching_illegal \
    "Buried contact-transistor separation must be at least 3"
spacing  bc	dfet 	 3	touching_ok \
    "Buried contact-transistor separation must be at least 3"
edge4way bc	diff,dmc 4	allButFet allpdTypes 3 \
    "Buried contact-transistor separation must be at least 4 on diff side"
edge4way bc	dfet	 4	dfet	0	0 \
    "Transistors next to buried contacts must be at least 4 long"

	# 
	# WARNING: The above rules don't take care of poly approaching
	# the buried contact on the diffusion side.  Unfortunately, the
	# only fix is a rule that is ridiculously conservative.  So
	# for now, buyer beware!
	#

	# 
	#  3 by 2 shape of buried contact next to dfet.
	#  No corner check.
	#
edge4way dfet	bc	3	bc	0	0 \
    "Buried contact next to depletion transistor must be at least 3x2"
	# 
	#  Poly and diffusion must overhang transistors by 2.
	#
	#  Corner checks are necessary for L or S shaped transistors.
	#
	#  Don't worry about dfet -- buried_contact boundaries here.
	#
edge4way tran	poly	2	poly,pmc   poly	2 \
    "Polysilicon must overhang transistor by at least 2"
edge4way tran	diff	2	diff,dmc   diff	2 \
    "Diffusion must overhang transistor by at least 2"

	#  Cannot change transistors as a result of cell overlaps */
no_overlap	efet,dfet	efet,dfet
end

# 
# Parameters for circuit extraction.
# A type may appear both as a node and as a transistor.  When it
# appears as a node, we are describing the gate, and when it appears
# as a transistor, we are describing the channel.
#

extract
    style default
    #  scale factor: output units (centimicrons) per lambda */
    lambda		200

    #  chunk size for hierarchical extraction, in lambda */
    step		100

    planeorder active	0
    planeorder metal	1

    #  sheet resistivity				milli-ohms per square */
    resist		diff,dmc/poly			10000
    resist		poly,pmc/poly,efet,dfet,bc	30000
    resist		metal,glass			   30

    #  area capacitance				atto-farads/lambda**2 */
    areacap		poly,efet,dfet			  200
    areacap		metal,glass			  120
    areacap		diff				  400
    areacap		bc				  600
    areacap		dmc/poly			  520
    areacap		pmc/poly			  320

    #  sidewall capacitance				atto-farads/lambda */
    perimc		diff,dmc/poly,bc  space,dfet,efet  200

    #  transistors  terms   #terms	name  substr  gs-cap  gc-cap */
    fet	efet	diff	  2	efet  GND!   	 0		0
    fet	dfet	diff,bc	  2	dfet  GND!	 0		0
    fet	dcap	diff,bc	  1	dcap  GND!	 0		0
#  End of style "default" */
end

#  Information for the wiring interface */
wiring
    contact pmc 4 metal 0 poly 0
    contact dmc 4 metal 0 diff 0
    contact bc  2 poly  0 diff 0
end

#  Information to control the router */
router
    layer1 metal 3 metal,pmc/metal,dmc/metal,glass 3
    layer2 poly 2 poly,efet,dfet,dcap,pmc,bc 2 diff,dmc 1
    contacts pmc 4
    gridspacing 7
end

#  Information for plowing */
plowing
    fixed efet,dfet,dcap,bc,glass
    covered efet,dfet,dcap,bc
    drag efet,dfet,dcap,bc
end

plot
    style versatec

	#  Same as Gremlin stipple 9: */
	dfet,dcap \
	    07c0 0f80 1f00 3e00 \
	    7c00 f800 f001 e003 \
	    c007 800f 001f 003e \
	    00c7 00f8 01f0 03e0
	
	#  Same as Gremlin stipple 10: */
	efet,dcap \
	    1f00 0f80 07c0 03e0 \
	    01f0 00f8 007c 003e \
	    001f 800f c007 e003 \
	    f001 f800 7c00 3e00
	
	#  Same as Gremlin stipple 11: */
	bc \
	    c3c3 c3c3 0000 0000 \
	    0000 0000 c3c3 c3c3 \
	    c3c3 c3c3 0000 0000 \
	    0000 0000 c3c3 c3c3
	
	#  Same as Gremlin stipple 12: */
	glass \
	    0040 0080 0100 0200 \
	    0400 0800 1000 2000 \
	    4000 8000 0001 0002 \
	    0004 0008 0010 0020
	
	#  Same as Gremlin stipple 17: */
	diff,dmc/active,efet,dfet,dcap,bc \
	    0000 4242 6666 0000 \
	    0000 2424 6666 0000 \
	    0000 4242 6666 0000 \
	    0000 2424 6666 0000
	
	#  Same as Gremlin stipple 19: */
	poly,pmc/active,efet,dfet,dcap,bc \
	    0808 0400 0202 0101 \
	    8080 4000 2020 1010 \
	    0808 0004 0202 0101 \
	    8080 0040 2020 1010
	
	#  Same as Gremlin stipple 22: */
	metal,dmc/metal,pmc/metal,glass \
	    8080 0000 0000 0000 \
	    0808 0000 0000 0000 \
	    8080 0000 0000 0000 \
	    0808 0000 0000 0000
	
	#  Same as Gremlin stipple 23: */
	glass \
	    0000 0000 1c1c 3e3e \
	    3636 3e3e 1c1c 0000 \
	    0000 0000 1c1c 3e3e \
	    3636 3e3e 1c1c 0000

	pmc,dmc  X
	bc       B
    
    style gremlin
	dfet,dcap				9
	efet,dcap				10
	bc					11
	glass					12
	diff,dmc/active,efet,dfet,dcap,bc	17
	poly,pmc/active,efet,dfet,dcap,bc	19
	metal,dmc,pmc,glass			22
	pmc,dmc					 X
	bc					 B
end