From 2593ad38d2ec36b99ff649134e9a81a6a25d113b Mon Sep 17 00:00:00 2001 From: =?UTF-8?q?Matthias=20K=C3=B6fferlein?= Date: Tue, 8 Jan 2019 00:48:08 +0100 Subject: [PATCH] Updated 2019 01 07 (markdown) --- 2019-01-07.md | 9 ++++++--- 1 file changed, 6 insertions(+), 3 deletions(-) diff --git a/2019-01-07.md b/2019-01-07.md index fab9708..ae5a5f1 100644 --- a/2019-01-07.md +++ b/2019-01-07.md @@ -118,11 +118,14 @@ Four-terminal devices with a bulk connection require the concept of global nets. global net represents the bulk (p-body) of the wafer. n-type transistors will have their bulk terminal connected to this virtual net. Such a net is represented by a global net. Global nets are inherited by parent circuits automatically. Global nets can be included in a connectivity specification with -"connect_global". A MOS4 device extractor emits bulk terminal shapes as copies of the gate shape to -a specified layer. When connecting this layer to the global "BULK" net, the B terminal of the +"connect_global". + +A MOS4 device extractor emits bulk terminal shapes as copies of the gate shape to +a layer as "W" input (well). When connecting this layer to the global "BULK" net, the "B" (bulk) terminal of the MOS4 devices will be connected to this global net. -Here is code for such an extraction. It also recognizes tie-down diodes for substrate and well connections: +Here is code for such an extraction. It also recognizes tie-down diodes for substrate and well connections. The p-tie-down diode will also connect to the "BULK" global net. The n diode will connect to the n-well area. n-well is +included in the net extraction like a conductive layer. ```ruby ly = RBA::Layout::new