diff --git a/src/db/db/dbLayoutToNetlistWriter.cc b/src/db/db/dbLayoutToNetlistWriter.cc index 62c9d6116..19ce996e9 100644 --- a/src/db/db/dbLayoutToNetlistWriter.cc +++ b/src/db/db/dbLayoutToNetlistWriter.cc @@ -199,12 +199,12 @@ void std_writer_impl::write (bool nested, std::mapbegin_device_classes () != mp_netlist->end_device_classes () && ! Keys::is_short ()) { *mp_stream << endl << indent << "# Device class section" << endl; - for (db::Netlist::const_device_class_iterator c = mp_netlist->begin_device_classes (); c != mp_netlist->end_device_classes (); ++c) { - db::DeviceClassTemplateBase *temp = db::DeviceClassTemplateBase::is_a (c.operator-> ()); - if (temp) { - *mp_stream << indent << Keys::class_key << "(" << tl::to_word_or_quoted_string (c->name ()) << " " << tl::to_word_or_quoted_string (temp->name ()) << ")" << endl; - m_progress.set (mp_stream->pos ()); - } + } + for (db::Netlist::const_device_class_iterator c = mp_netlist->begin_device_classes (); c != mp_netlist->end_device_classes (); ++c) { + db::DeviceClassTemplateBase *temp = db::DeviceClassTemplateBase::is_a (c.operator-> ()); + if (temp) { + *mp_stream << indent << Keys::class_key << "(" << tl::to_word_or_quoted_string (c->name ()) << " " << tl::to_word_or_quoted_string (temp->name ()) << ")" << endl; + m_progress.set (mp_stream->pos ()); } } diff --git a/testdata/algo/l2n_writer_au_2s.txt b/testdata/algo/l2n_writer_au_2s.txt index e06f526ba..fd1c17892 100644 --- a/testdata/algo/l2n_writer_au_2s.txt +++ b/testdata/algo/l2n_writer_au_2s.txt @@ -32,6 +32,8 @@ C(ptie diff_cont ptie) C(nsd diff_cont nsd) G(rbulk BULK) G(ptie BULK) +K(PMOS MOS4) +K(NMOS MOS4) D(D$PMOS PMOS T(S R(psd (-650 -475) (525 950)) diff --git a/testdata/algo/l2n_writer_au_s.txt b/testdata/algo/l2n_writer_au_s.txt index fe2768a0d..fbe139f9b 100644 --- a/testdata/algo/l2n_writer_au_s.txt +++ b/testdata/algo/l2n_writer_au_s.txt @@ -23,6 +23,8 @@ C(metal2 via1 metal2 metal2_lbl) C(metal2_lbl metal2) C(psd diff_cont psd) C(nsd diff_cont nsd) +K(PMOS MOS3) +K(NMOS MOS3) D(D$PMOS PMOS T(S R(psd (-650 -475) (525 950)) diff --git a/testdata/lvs/inv2.lvsdb b/testdata/lvs/inv2.lvsdb index 782d6282e..5f4e3fee5 100644 --- a/testdata/lvs/inv2.lvsdb +++ b/testdata/lvs/inv2.lvsdb @@ -30,6 +30,8 @@ J( C(l10 l8 l10) G(l7 SUBSTRATE) G(l10 SUBSTRATE) + K(PMOS MOS4) + K(NMOS MOS4) D(D$PMOS PMOS T(S R(l2 (-575 -750) (450 1500)) @@ -146,6 +148,8 @@ J( ) ) H( + K(PMOS MOS4) + K(NMOS MOS4) X(INVERTER_WITH_DIODES N(1 I(VSS)) N(2 I(IN)) diff --git a/testdata/lvs/invchain_cheat.lvsdb b/testdata/lvs/invchain_cheat.lvsdb index a661487b5..67ff6bc68 100644 --- a/testdata/lvs/invchain_cheat.lvsdb +++ b/testdata/lvs/invchain_cheat.lvsdb @@ -27,6 +27,8 @@ J( C(l2 l6 l2) C(l5 l6 l5) G(l14 SUBSTRATE) + K(PMOS MOS3) + K(NMOS MOS3) D(D$PMOS PMOS T(S R(l2 (-900 -475) (775 950)) @@ -265,6 +267,8 @@ J( ) ) H( + K(PMOS MOS3) + K(NMOS MOS3) X(INV N(1 I('1')) N(2 I('2')) diff --git a/testdata/lvs/ringo_simple_io.lvsdb.1 b/testdata/lvs/ringo_simple_io.lvsdb.1 index ab4626e4d..ed998ca98 100644 --- a/testdata/lvs/ringo_simple_io.lvsdb.1 +++ b/testdata/lvs/ringo_simple_io.lvsdb.1 @@ -26,6 +26,8 @@ J( C(l10 l8 l10) G(l7 SUBSTRATE) G(l10 SUBSTRATE) + K(PMOS MOS4) + K(NMOS MOS4) D(D$PMOS PMOS T(S R(l2 (-550 -750) (425 1500)) @@ -518,6 +520,8 @@ J( ) ) H( + K(PMOS MOS4) + K(NMOS MOS4) X(ND2X1 N(1 I(VDD)) N(2 I(OUT)) diff --git a/testdata/lvs/ringo_simple_io.lvsdb.2 b/testdata/lvs/ringo_simple_io.lvsdb.2 index b87c0ef7e..8b7238826 100644 --- a/testdata/lvs/ringo_simple_io.lvsdb.2 +++ b/testdata/lvs/ringo_simple_io.lvsdb.2 @@ -26,6 +26,8 @@ J( C(l10 l8 l10) G(l7 SUBSTRATE) G(l10 SUBSTRATE) + K(PMOS MOS4) + K(NMOS MOS4) D(D$PMOS PMOS T(S R(l2 (-550 -750) (425 1500)) @@ -518,6 +520,8 @@ J( ) ) H( + K(PMOS MOS4) + K(NMOS MOS4) X(ND2X1 N(1 I(VDD)) N(2 I(OUT)) diff --git a/testdata/lvs/ringo_simple_io2.l2n.1 b/testdata/lvs/ringo_simple_io2.l2n.1 index ca7ecbc14..7e0cf804b 100644 --- a/testdata/lvs/ringo_simple_io2.l2n.1 +++ b/testdata/lvs/ringo_simple_io2.l2n.1 @@ -25,6 +25,8 @@ C(l6 l8 l6) C(l10 l8 l10) G(l7 SUBSTRATE) G(l10 SUBSTRATE) +K(PMOS MOS4) +K(NMOS MOS4) D(D$PMOS PMOS T(S R(l2 (-550 -750) (425 1500))