diff --git a/testdata/drc/drcSimpleTests_122.drc b/testdata/drc/drcSimpleTests_122.drc
new file mode 100644
index 000000000..ec6b68fde
--- /dev/null
+++ b/testdata/drc/drcSimpleTests_122.drc
@@ -0,0 +1,36 @@
+
+source $drc_test_source
+report_netlist $drc_test_target
+
+deep
+
+l1 = input(1, 0)
+l2 = input(2, 0)
+l3 = input(3, 0)
+
+active = input(10, 0)
+poly = input(11, 0)
+contact = input(12, 0)
+
+sd = active - poly
+gate = active & poly
+
+name(l1, "l1")
+name(l2, "l2")
+name(l3, "l3", RBA::LayerInfo::new(3, 0, "l3"))
+name(sd, "sd", 17, 0)
+name(poly, "poly", 11)
+name(gate, "gate")
+name(contact, "contact")
+
+mos_ex = RBA::DeviceExtractorMOS3Transistor::new("MOS")
+extract_devices(mos_ex, { "SD" => sd, "G" => gate, "P" => poly })
+
+connect(contact, poly)
+connect(contact, sd)
+connect(l1, contact)
+connect(l1, l2)
+connect(l2, l3)
+
+netlist 
+
diff --git a/testdata/drc/drcSimpleTests_122.gds b/testdata/drc/drcSimpleTests_122.gds
new file mode 100644
index 000000000..c70c6c2a8
Binary files /dev/null and b/testdata/drc/drcSimpleTests_122.gds differ
diff --git a/testdata/drc/drcSimpleTests_au122.l2n b/testdata/drc/drcSimpleTests_au122.l2n
new file mode 100644
index 000000000..d34f94a3f
--- /dev/null
+++ b/testdata/drc/drcSimpleTests_au122.l2n
@@ -0,0 +1,113 @@
+#%l2n-klayout
+W(TOP)
+U(0.001)
+L(l1 '1/0')
+L(l2 '2/0')
+L(l3 'l3 (3/0)')
+L(poly '11/0')
+L(contact '12/0')
+L(sd '17/0')
+C(l1 l1 l2 contact)
+C(l2 l1 l2 l3)
+C(l3 l2 l3)
+C(poly poly contact)
+C(contact l1 poly contact sd)
+C(sd contact sd)
+K(MOS MOS3)
+D(D$MOS MOS
+ T(S
+  R(sd (-2000 -2600) (4000 800))
+ )
+ T(G
+  R(poly (-2000 -1800) (4000 3600))
+ )
+ T(D
+  R(sd (-2000 1800) (4000 800))
+ )
+)
+X(A
+ R((-2800 -2500) (5600 5200))
+ N(1
+  R(contact (-1900 2000) (600 600))
+  R(contact (-600 -600) (600 600))
+  R(contact (2600 -600) (600 600))
+  R(contact (-600 -600) (600 600))
+  R(contact (-2200 -600) (600 600))
+  R(contact (-600 -600) (600 600))
+  R(sd (-2300 -700) (4000 800))
+ )
+ N(2
+  R(contact (-1900 -2400) (600 600))
+  R(contact (2600 -600) (600 600))
+  R(contact (-2200 -600) (600 600))
+  R(sd (-2300 -700) (4000 800))
+ )
+ N(3
+  R(poly (-2800 -1700) (5600 3600))
+ )
+ P(1)
+ P(2)
+ P(3)
+ D(1 D$MOS
+  Y(0 100)
+  E(L 3.6)
+  E(W 4)
+  E(AS 3.2)
+  E(AD 3.2)
+  E(PS 9.6)
+  E(PD 9.6)
+  T(S 2)
+  T(G 3)
+  T(D 1)
+ )
+)
+X(AA
+ R((-2050 -1950) (5600 5200))
+ N(1)
+ N(2)
+ N(3)
+ P(1)
+ P(2)
+ P(3)
+ X(1 A O(180) Y(750 750)
+  P(0 2)
+  P(1 1)
+  P(2 3)
+ )
+)
+X(TOP
+ R((-3150 -3500) (8050 12650))
+ N(1 I(B)
+  R(l1 (1650 5200) (3250 2800))
+  R(l1 (-3300 -10700) (800 4000))
+  R(l2 (1100 5100) (700 700))
+  R(l2 (-2500 -8200) (700 700))
+  Q(l3 (-790 -810) (0 1000) (1790 0) (0 7510) (1000 0) (0 -8510))
+  R(l3 (-500 3410) (0 0))
+  R(contact (-2100 3300) (600 600))
+  R(contact (-600 1000) (600 600))
+ )
+ N(2 I(A)
+  R(l1 (-1400 1300) (2600 3000))
+  R(l1 (-3550 -350) (4000 750))
+  R(l1 (-1650 -1700) (0 0))
+  R(contact (-1200 -1600) (600 600))
+  R(contact (1000 -600) (600 600))
+ )
+ N(3
+  R(l1 (-2350 8300) (4000 850))
+ )
+ N(4
+  R(l1 (-2800 -2800) (800 4100))
+ )
+ X(1 AA Y(-1100 5900)
+  P(0 3)
+  P(1 2)
+  P(2 1)
+ )
+ X(2 A O(90) Y(-100 -700)
+  P(0 4)
+  P(1 1)
+  P(2 2)
+ )
+)