diff --git a/technology/scn4m_subm/tech/SCN4M_SUBM.20.tech b/technology/scn4m_subm/tech/SCN4M_SUBM.20.tech index bb2c2490..f39aa84f 100644 --- a/technology/scn4m_subm/tech/SCN4M_SUBM.20.tech +++ b/technology/scn4m_subm/tech/SCN4M_SUBM.20.tech @@ -1,5 +1,5 @@ tech - format 29 + format 31 scmos end @@ -301,11 +301,6 @@ style lambda=0.20(p) scalefactor 20 10 options calma-permissive-labels - # This is a custom section to add bounding boxes in OpenRAM - layer BB bb - labels bb - calma 63 0 - layer CWN nwell,rnw,nwr,nwsd,nwsc bloat-or pdiff,apres,rpd,pdc/a,pfet * 120 bloat-or nsd,nsc/a * 60 @@ -1769,11 +1764,6 @@ cifinput style lambda=0.20(p) scalefactor 20 - # This is a custom section to add bounding boxes in OpenRAM - layer bb BB - labels BB - calma 63 0 - layer nwell CWN and-not CWNR and-not CTA @@ -6701,7 +6691,7 @@ drc edge4way nfet,pfet,fet space/active,ndiff,anres,rnd,ndc/a,pdiff,apres,rpd,pdc/a 3 ndiff,anres,rnd,ndc/a,pdiff,apres,rpd,pdc/a,nfet,pfet,fet 0 0 \ "N-Diffusion,P-Diffusion overhang of Transistor < 3 (Mosis #3.4)" active - edge4way poly,fp,rp,pc/a ~(poly,fp,pres,rp,pc/a,nfet,pfet,fet,prp)/active 1 space space 1 \ + edge4way poly,fp,rp,pc/a ~(poly,fp,pres,rp,pc/a,nfet,pfet,fet,prp)/active 1 space/a space/a 1 \ "Poly spacing to Diffusion < 1 (Mosis #3.5)" edge4way nfet ~(nfet)/active 2 ~(pselect)/select ~(nfet)/active 2 \ @@ -7212,13 +7202,15 @@ extract planeorder via3 14 planeorder fill 15 + substrate *psd,space/w,pwell well + resist (ndiff,anres,rnd,ndc,nsd,nwsd,nsc,nwsc)/active 3700 resist (pdiff,apres,rpd,pdc,psd,psc)/active 2800 resist (nwell)/well 1018000 - resist (rnw,nwr)/active 1018000 + resist (rnw,nwr)/active 1018000 0.5 resist (pwell)/well 1 resist (poly,fp,rp,pc,pc,nfet,pfet,fet)/active 6000 - resist (pres)/active 6000 + resist (pres)/active 6000 0.5 resist (m1,fm1,rm1,ndc,nsc,nwsc,pdc,psc,pc,m2c,m2c)/metal1 80 resist (m2,fm2,rm2,m2c,m3c,m3c)/metal2 70 resist (m3,fm3,rm3,m3c,m4c,m4c)/metal3 80 @@ -7416,33 +7408,30 @@ extract #metali -#fets +#devices - fet pfet pdiff,pdc 2 pfet Vdd! nwell 52 181 - fet pfet pdiff,pdc 1 pfet Vdd! nwell 52 181 - - fet nfet ndiff,ndc 2 nfet Gnd! pwell 55 182 - fet nfet ndiff,ndc 1 nfet Gnd! pwell 55 182 + device mosfet pfet pfet pdiff,pdc nwell ERROR 52 181 + device mosfet nfet nfet ndiff,ndc pwell,space/w ERROR 55 182 fetresis pfet linear 12182 fetresis pfet saturation 12182 fetresis nfet linear 3961 fetresis nfet saturation 3961 - fet rnwell nsd,nsc 2 nwellResistor Gnd! nwell,pwell 0 0 - fet rpoly poly,pc 2 polyResistor Gnd! nwell,pwell 0 0 - fet nwr nwsd 2 nwellFig1bResistor Gnd! nwell,pwell 0 0 - fet rndiff ndiff,ndc 2 ndiffResistor Gnd! nwell,pwell 0 0 - fet rpdiff pdiff,pdc 2 pdiffResistor Gnd! nwell,pwell 0 0 + device resistor nwellResistor rnwell *nsd + device resistor polyResistor rpoly *poly + device resistor nwellFig1bResistor nwr nwsd + device resistor ndiffResistor rndiff *ndiff + device resistor pdiffResistor rpdiff *pdiff - fet rmetal1 metal1 2 metal1Resistor Gnd! nwell,pwell 0 0 - fet rmetal2 metal2 2 metal2Resistor Gnd! nwell,pwell 0 0 - fet rmetal3 metal3 2 metal3Resistor Gnd! nwell,pwell 0 0 - fet rmetal4 metal4 2 metal4Resistor Gnd! nwell,pwell 0 0 + device resistor metal1Resistor rmetal1 *metal1 + device resistor metal2Resistor rmetal2 *metal2 + device resistor metal3Resistor rmetal3 *metal3 + device resistor metal4Resistor rmetal4 *metal4 - fet pres poly,pc 2 presResistor Gnd! nwell,pwell 0 0 - fet anres ndiff,ndc 2 anresResistor Gnd! nwell,pwell 0 0 - fet apres pdiff,pdc 2 apresResistor Gnd! nwell,pwell 0 0 + device resistor presResistor pres *poly + device resistor anresResistor anres *ndiff + device resistor apresResistor apres *pdiff end